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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG30N60E-GE3

Name: SIHG30N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG30N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG30N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG30N60E-GE3.pdf

Description:: MOSFET N-CH 600V 29A TO247AC

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Product details

Overview

SIHG30N60E-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC max, and avalanche-rated (E_AS = 690 mJ), designed for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHG30N60E-GE3 datasheet, SIHG30N60E-GE3 pinout, SIHG30N60E-GE3 application, or SIHG30N60E-GE3 equivalent, this device supports high-voltage DC-DC conversion, telecom rectification, and solar inverter primary-side switching where low conduction loss, fast switching, and rugged unclamped inductive switching capability are required.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for reduced figure-of-merit (R_DS(on) × Q_g = 16.25 Ω·nC typ), enabling lower switching and conduction losses in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity while remaining compatible with standard 10 V gate drivers.

The device integrates a fast-recovery body diode (t_rr = 402–605 ns, Q_rr = 7–15 μC) and exhibits controlled dV/dt capability (70 V/ns) to minimize EMI in high-frequency operation. Thermal resistance R_thJC = 0.5 °C/W enables high-power dissipation with efficient heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom and solar inverters
R_DS(on) max @ 10 V	0.125 Ω - delivers ≤ 54 W conduction loss at 20.8 A RMS in continuous conduction mode PFC
Q_g max	130 nC - enables <100 ns turn-on delay with 4.7 Ω gate resistor, reducing switching transition time
E_AS	690 mJ - withstands repetitive unclamped inductive energy without failure in hard-switched SMPS output stages
t_rr & Q_rr	402–605 ns / 7–15 μC - minimizes reverse recovery loss and cross-conduction risk in synchronous rectification and bridge configurations
R_thJC	0.5 °C/W - allows 250 W power dissipation with ≤ 125 °C junction rise above case, supporting high-current industrial motor drives

Pinout & Package

SIHG30N60E-GE3 is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and high thermal conductivity. The package features three leads: Gate (pin 1), Drain (pins 2 & 4), and Source (pin 3), with pin 4 electrically connected to the drain tab for low-inductance high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive signal; input capacitance C_iss = 2600 pF requires careful gate driver sizing to avoid overshoot
2 (Drain)	Main high-side current path	Connected to high-voltage DC bus; shares internal connection with pin 4 and metal tab for minimized loop inductance
3 (Source)	Reference and return node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current
4 (Drain)	Secondary drain connection	Electrically tied to pin 2 and drain tab; used for redundant high-current routing and improved thermal spreading

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	16.25 Ω·nC typ - directly reduces total switching + conduction loss in 100–300 kHz SMPS designs
Avalanche energy rating	690 mJ single-pulse - eliminates need for external snubbers in flyback and resonant converter primary switches
Body diode t_rr & Q_rr	402–605 ns / 7–15 μC - enables reliable operation in LLC and phase-shifted full-bridge topologies without external anti-parallel diodes
High dV/dt immunity	70 V/ns - suppresses false turn-on during high dv/dt commutation, improving reliability in high-speed hard-switched converters
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - supports lead-free manufacturing and environmental compliance

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3 kW telecom rectifier modules operating at 100 kHz with 380 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel power switch in active clamp forward or half-bridge topology. Use Value: Low R_DS(on) reduces conduction loss by 18 % vs. legacy 0.18 Ω devices; avalanche rating eliminates need for clamping circuits.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Main switching element in three-phase IGBT/MOSFET-based inverter bridge. Use Value: 600 V rating supports 1000 V DC systems with margin; fast body diode enables zero-voltage switching assist in soft-switched designs.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Inverter stage of 7.5 kW variable frequency drive powering induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Output stage power switch handling 30 A peak current at 8 kHz PWM frequency. Use Value: R_thJC = 0.5 °C/W enables direct mounting to heatsink without thermal interface degradation; 65 A pulsed rating handles motor startup surges.	Use Scenario: Buck-boost LED driver for 150 W streetlights operating from 277 V AC line with active PFC front-end. IC Role / Device Role / Timing Role: High-side switch in critical conduction mode (CRM) PFC controller. Use Value: Ultra-low Q_g (130 nC max) improves power factor correction efficiency >98 % at full load; low C_iss reduces gate drive loss.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3 kW telecom rectifier modules operating at 100 kHz with 380 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch in active clamp forward or half-bridge topology.

Use Value: Low R_DS(on) reduces conduction loss by 18 % vs. legacy 0.18 Ω devices; avalanche rating eliminates need for clamping circuits.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching element in three-phase IGBT/MOSFET-based inverter bridge.

Use Value: 600 V rating supports 1000 V DC systems with margin; fast body diode enables zero-voltage switching assist in soft-switched designs.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Inverter stage of 7.5 kW variable frequency drive powering induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Output stage power switch handling 30 A peak current at 8 kHz PWM frequency.

Use Value: R_thJC = 0.5 °C/W enables direct mounting to heatsink without thermal interface degradation; 65 A pulsed rating handles motor startup surges.

Use Scenario: Buck-boost LED driver for 150 W streetlights operating from 277 V AC line with active PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in critical conduction mode (CRM) PFC controller.

Use Value: Ultra-low Q_g (130 nC max) improves power factor correction efficiency >98 % at full load; low C_iss reduces gate drive loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 30 A, R_DS(on) = 0.135 Ω, Q_g = 120 nC, D²PAK package	Higher R_DS(on) increases conduction loss; smaller package limits thermal headroom at >200 W	Preferred for space-constrained designs where board area is prioritized over thermal margin
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.14 Ω, Q_g = 110 nC, TO-247 package, no UIS rating	Lacks avalanche energy specification; higher R_DS(on) raises junction temperature under sustained load	Suitable for non-inductive or snubber-protected topologies where avalanche stress is absent

Compared with STW30NM60ND and IXFH30N60P, SIHG30N60E-GE3 offers superior avalanche ruggedness and lower conduction loss in TO-247AC, making it optimal for unclamped inductive loads and thermally demanding industrial power supplies.

Availability

SIHG30N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SIHG30N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems, emphasizing low FOM, rugged avalanche performance, and robust thermal design.

FAQ

What is the maximum continuous drain current rating for SIHG30N60E-GE3 at 100 °C case temperature?

The SIHG30N60E-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 29 A rating at 25 °C due to thermal limitations, and must be applied with proper heatsinking to maintain junction temperature ≤150 °C. The linear derating factor is 2 W/°C beyond 100 °C.

Does SIHG30N60E-GE3 support gate drive voltages below 10 V?

Yes, SIHG30N60E-GE3 operates with gate voltages down to its threshold range of 2.0–4.0 V, but full enhancement and guaranteed R_DS(on) ≤ 0.125 Ω require V_GS = 10 V. At 5 V, R_DS(on) rises significantly (not characterized in datasheet), so 10 V drive is recommended for low-loss operation. Logic-level variants are not offered in this family.

Is SIHG30N60E-GE3 suitable for use in synchronous rectification topologies?

While SIHG30N60E-GE3 includes an integral body diode with t_rr = 402–605 ns, it is not optimized for synchronous rectification due to relatively high Q_rr and lack of dedicated low-Q_rr design. For SR applications, Vishay recommends TrenchFET® Gen IV devices like SiR626DP. SIHG30N60E-GE3 is best deployed as a primary-side switch.

What is the thermal resistance from junction to case (R_thJC) for SIHG30N60E-GE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIHG30N60E-GE3 is 0.5 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper mounting to a flat, smooth heatsink surface with thermal interface material; actual system R_thJA depends on heatsink size and airflow.

How does the avalanche energy rating of SIHG30N60E-GE3 impact circuit protection design?

The SIHG30N60E-GE3 is rated for 690 mJ single-pulse avalanche energy (E_AS), allowing it to safely absorb inductive energy during switching transients without external snubbers in topologies like flyback or forward converters. This rating enables simplified, cost-effective protection schemes but does not replace design for worst-case fault conditions.

SIHG30N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG30N60E-GE3 FAQ

1.How can I place an order for SIHG30N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG30N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG30N60E-GE3 reliable?

The price and inventory of SIHG30N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG30N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG30N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG30N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG30N60E-GE3?

SIHG30N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG30N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG30N60E-GE3?

For technical support, including SIHG30N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG30N60E-GE3 requirements.

6.How does Aetrix verify that SIHG30N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG30N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG30N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG30N60E-GE3?

All SIHG30N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG30N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG30N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG30N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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