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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG32N50D-GE3

Name: SIHG32N50D-GE3
Brand: Vishay Siliconix
SKU: SIHG32N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG32N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG32N50D-GE3.pdf

Description:: MOSFET N-CH 500V 30A TO247AC

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Product details

Overview

SIHG32N50D-GE3 from Vishay Siliconix is a 500 V, 30 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.150 Ω at V_GS = 10 V, Q_g = 96 nC, and avalanche-rated (E_AS = 225 mJ). It delivers high ruggedness and fast switching for high-efficiency SMPS in server power supplies and industrial motor drives.

For engineers reviewing the SIHG32N50D-GE3 datasheet, SIHG32N50D-GE3 pinout, SIHG32N50D-GE3 application, or SIHG32N50D-GE3 equivalent, key selection criteria include its 500 V V_DS, 0.150 Ω on-resistance at 10 V gate drive, 96 nC total gate charge, TO-247AC thermal performance (R_thJC = 0.32 °C/W), and body diode recovery characteristics (t_rr = 467 ns, Q_rr = 7 μC).

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage switching with low figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V logic-level drivers, while the integral body diode supports synchronous rectification and inductive load handling.

The MOSFET is rated for repetitive pulsed drain current up to 89 A and unclamped inductive switching (UIS) with 225 mJ single-pulse avalanche energy. Thermal design leverages the TO-247AC package's low junction-to-case resistance (0.32 °C/W) and 390 W maximum power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in 400 V DC bus applications with 25 % margin
R_DS(on) max	0.150 Ω at V_GS = 10 V - Enables <1.2 W conduction loss at 30 A continuous drain current
Q_g max	96 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	225 mJ - Confirmed avalanche energy rating enables robust operation under inductive fault conditions
t_rr	467 ns - Body diode reverse recovery time impacts switching losses and EMI in bridge configurations
R_thJC	0.32 °C/W - Enables high-power thermal management with direct heatsink mounting via drain tab
I_D cont	30 A at T_C = 25 °C - Continuous current capability defined at case temperature, not ambient

Pinout & Package

SIHG32N50D-GE3 uses the TO-247AC package: a 3-lead, through-hole, high-voltage power package with isolated drain tab for direct heatsinking. The plastic body includes a thermal pad contour (optional per version), and lead finish is uncontrolled in L1 per Vishay Package Document 91360.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V gate drive; threshold 3.0–5.0 V; input capacitance C_iss = 2550 pF affects drive strength requirements
2 (Drain)	High-side power terminal	Connected to drain tab (case); electrically tied to internal MOSFET drain; used for heatsink mounting
3 (Source)	Reference node	Common return path for load current; defines ground reference for gate drive; carries full source current including body diode conduction

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	14.4 Ω·nC - Reduces combined conduction and switching losses in high-frequency SMPS
Avalanche energy rated (UIS)	225 mJ - Eliminates need for external snubbers in inductive switching circuits
High body diode ruggedness	Rated for ISM = 128 A pulsed forward current - Supports high-current freewheeling without degradation
Fast switching transitions	t_d(on) = 27–54 ns, t_f = 55–83 ns - Enables >100 kHz operation with minimized dead-time losses
Low C_oss (energy-related)	C_o(er) = 190 pF - Reduces capacitive turn-off losses in hard-switched converters

Applications

Server SMPS Primary Switch	Industrial Motor Drive Inverter
Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end converter operating at 100–300 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main high-side switching element in LLC or phase-shifted full-bridge topology; handles 30 A continuous primary current. Use Value: Low R_DS(on) minimizes conduction loss; 500 V rating provides margin over 400 V bus; avalanche rating protects against transformer leakage inductance spikes.	Use Scenario: 3-phase IGBT/MOSFET inverter stage for 5–15 kW industrial servo drives with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switching device in 600 V-class inverter leg; conducts motor phase current and blocks reverse voltage during PWM commutation. Use Value: Fast t_rr (467 ns) and low Q_rr (7 μC) reduce shoot-through risk and switching loss during body-diode conduction in 3-phase bridges.
Plasma Display Power Supply	Welding Equipment Inverter
Use Scenario: Sustaining and addressing power supply for large-format plasma display panels requiring high-voltage, high-current pulses. IC Role / Device Role / Timing Role: High-voltage switch in resonant flyback or half-bridge sustaining circuit; operates with 10–50 kHz burst-mode switching. Use Value: 225 mJ UIS rating withstands repeated high-energy plasma ignition transients; TO-247AC package ensures stable thermal performance under pulsed loads.	Use Scenario: Inverter stage of IGBT-based or MOSFET-based arc welding machines delivering 200–400 A output with high-duty-cycle modulation. IC Role / Device Role / Timing Role: Primary switching device in DC-link chopper or inverter bridge; subjected to high dI/dt and repetitive short-circuit stress. Use Value: High ID_M = 89 A and rugged body diode support high peak currents during arc initiation; low R_DS(on) reduces thermal stress during extended weld cycles.

Server SMPS Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end converter operating at 100–300 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Main high-side switching element in LLC or phase-shifted full-bridge topology; handles 30 A continuous primary current.

Use Value: Low R_DS(on) minimizes conduction loss; 500 V rating provides margin over 400 V bus; avalanche rating protects against transformer leakage inductance spikes.

Use Scenario: 3-phase IGBT/MOSFET inverter stage for 5–15 kW industrial servo drives with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switching device in 600 V-class inverter leg; conducts motor phase current and blocks reverse voltage during PWM commutation.

Use Value: Fast t_rr (467 ns) and low Q_rr (7 μC) reduce shoot-through risk and switching loss during body-diode conduction in 3-phase bridges.

Plasma Display Power Supply

Welding Equipment Inverter

Use Scenario: Sustaining and addressing power supply for large-format plasma display panels requiring high-voltage, high-current pulses.

IC Role / Device Role / Timing Role: High-voltage switch in resonant flyback or half-bridge sustaining circuit; operates with 10–50 kHz burst-mode switching.

Use Value: 225 mJ UIS rating withstands repeated high-energy plasma ignition transients; TO-247AC package ensures stable thermal performance under pulsed loads.

Use Scenario: Inverter stage of IGBT-based or MOSFET-based arc welding machines delivering 200–400 A output with high-duty-cycle modulation.

IC Role / Device Role / Timing Role: Primary switching device in DC-link chopper or inverter bridge; subjected to high dI/dt and repetitive short-circuit stress.

Use Value: High ID_M = 89 A and rugged body diode support high peak currents during arc initiation; low R_DS(on) reduces thermal stress during extended weld cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NM50N	500 V, 30 A, R_DS(on) = 0.14 Ω, Q_g = 85 nC, TO-220FP package	Limited to 125 W P_D; higher R_thJA (62 °C/W) restricts high-power use without forced cooling	Prefer SIHG32N50D-GE3 for >200 W conduction-limited designs requiring superior thermal dissipation
IXTH30N50L	500 V, 30 A, R_DS(on) = 0.16 Ω, Q_g = 105 nC, TO-247 package	Higher Q_g increases gate drive loss; lower E_AS (170 mJ) reduces fault tolerance	SIHG32N50D-GE3 offers better FOM and avalanche margin for critical industrial UPS or welder applications

Compared with STP30NM50N and IXTH30N50L, SIHG32N50D-GE3 delivers the lowest R_DS(on) × Q_g (14.4 Ω·nC), highest avalanche energy (225 mJ), and best thermal resistance (R_thJC = 0.32 °C/W), making it optimal for high-reliability, high-power-density 500 V switching where thermal headroom and fault robustness are critical.

Availability

SIHG32N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and plasma display electronics requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG32N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and power efficiency.

The D Series Power MOSFETs, including SIHG32N50D-GE3, were engineered for high-voltage, high-current switching in demanding industrial and telecom power systems where avalanche capability, low switching loss, and thermal stability are essential.

FAQ

What is the maximum continuous drain current rating for SIHG32N50D-GE3 at 100 °C case temperature?

The SIHG32N50D-GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package under sustained high-temperature operation and must be verified against actual heatsink performance and ambient conditions in the final design. The SIHG32N50D-GE3 datasheet confirms this value with linear derating beyond 100 °C.

Does SIHG32N50D-GE3 support logic-level gate drive?

No, SIHG32N50D-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, a minimum 10 V gate drive is required. The SIHG32N50D-GE3 does not guarantee full turn-on below 8 V and is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate boosting.

What is the significance of the "-GE3" suffix in SIHG32N50D-GE3?

Per Vishay ordering information, the "-GE3" suffix indicates that SIHG32N50D-GE3 is both lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (Document 99912). It denotes the same die and TO-247AC package as SiHG32N50D-E3 but with fully green packaging materials, including halogen-free molding compound and matte tin lead finish.

How does the body diode performance of SIHG32N50D-GE3 compare to standard FRDs?

The SIHG32N50D-GE3 body diode has t_rr = 467 ns and Q_rr = 7 μC at T_J = 25 °C, which is typical for high-voltage trench/planar MOSFETs but slower than dedicated fast recovery diodes (FRDs). Its V_SD = 1.2 V at 16 A supports moderate freewheeling, but for high-frequency synchronous rectification, an external Schottky or SiC diode is recommended. The SIHG32N50D-GE3 body diode is optimized for ruggedness-not speed-enabling reliable operation in inductive switching.

Can SIHG32N50D-GE3 be used in parallel configurations?

Yes, SIHG32N50D-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. temperature curve), which promotes current sharing. However, layout symmetry, matched gate drive impedance (<9.1 Ω per device), and individual source inductance balancing are mandatory. The SIHG32N50D-GE3 datasheet does not specify derating factors for paralleling; thermal and electrical imbalance must be validated per application per Vishay Application Note AN950.

SIHG32N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG32N50D-GE3 FAQ

1.How can I place an order for SIHG32N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG32N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG32N50D-GE3 reliable?

The price and inventory of SIHG32N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG32N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG32N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG32N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG32N50D-GE3?

SIHG32N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG32N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG32N50D-GE3?

For technical support, including SIHG32N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG32N50D-GE3 requirements.

6.How does Aetrix verify that SIHG32N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG32N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG32N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG32N50D-GE3?

All SIHG32N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG32N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG32N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHG32N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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