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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG33N60E-E3

Name: SIHG33N60E-E3
Brand: Vishay Siliconix
SKU: SIHG33N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG33N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG33N60E-E3.pdf

Description:: MOSFET N-CH 600V 33A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG33N60E-E3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.099 Ω @ V_GS = 10 V, Q_g = 150 nC max, and avalanche-rated (E_AS = 793 mJ), designed for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHG33N60E-E3 datasheet, SIHG33N60E-E3 pinout, SIHG33N60E-E3 application, or SIHG33N60E-E3 equivalent, key selection criteria include its low figure-of-merit (R_DS(on) × Q_g), robust unclamped inductive switching capability, and thermal resistance R_thJC = 0.45 °C/W for high-power density designs.

Technical Context

This MOSFET employs planar silicon technology with optimized gate charge distribution (Q_gs = 24 nC, Q_gd = 42 nC) to reduce switching losses in hard-switched topologies. Its C_iss = 3508 pF and low C_rss = 6 pF support fast, controllable turn-on/turn-off transitions under high dV/dt conditions up to 70 V/ns.

The device integrates a co-packaged body diode with t_rr = 1006 ns max and Q_rr = 17 μC, enabling reliable operation in continuous conduction mode (CCM) PFC and resonant converters where diode recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified rails with ≥20 % margin for surge and ripple
R_DS(on) max	0.099 Ω @ 10 V - enables ≤1.1 W conduction loss at 33 A DC, suitable for 500–1000 W power stages
Q_g max	150 nC - determines gate drive power requirement (~1.5 mW per MHz at 10 V drive)
E_AS	793 mJ - ensures single-pulse ruggedness during output short-circuit or startup faults without derating
R_thJC	0.45 °C/W - allows 278 W dissipation with ≤125 °C junction rise over case, supporting forced-air or heatsink-cooled layouts
I_D continuous	33 A @ T_C = 25 °C - defines maximum steady-state current with adequate heatsinking
t_rr	1006 ns max - constrains minimum dead time in synchronous rectification to avoid shoot-through

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and standard lead finish. Thermal pad optional per version; mechanical outline conforms to JEDEC TO-247 with facility-specific tolerances (Facility Codes: 9/Y/N).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 0–10 V logic-level drive; requires <1.0 Ω gate resistor to limit ringing and overshoot
2 (Drain)	High-side power node	Connected to main DC bus or transformer primary; electrically tied to metal tab for thermal path
3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.9 Ω·nC - reduces total switching + conduction loss trade-off, improving efficiency in 100–300 kHz SMPS
Avalanche energy rating	793 mJ - eliminates need for external snubbers in inductive load switching applications
Ultra-low C_rss	6 pF - minimizes Miller-induced voltage spikes during high dV/dt commutation, easing gate drive design
Body diode Q_rr	17 μC - enables predictable reverse recovery behavior in PFC boost diodes and LLC synchronous rectifiers
High dV/dt immunity	70 V/ns - sustains reliable operation in noisy high-frequency power converter environments

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1U 2 kW redundant AC/DC front-end modules. IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward or LLC resonant topology. Use Value: Low Q_g and R_DS(on) enable >96 % efficiency at full load while maintaining thermal headroom on compact heatsinks.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems handling 3 kW output. IC Role / Device Role / Timing Role: Fast-switching, high-current switch in continuous conduction mode (CCM) boost converter. Use Value: Avalanche rating and controlled Q_rr prevent failure during line surges and ensure stable power factor correction across wide input range.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-phase inverter bridge legs. Use Value: 600 V rating and 33 A current capacity support 5–10 kW inverters with reduced conduction loss vs. older 650 V MOSFETs.	Use Scenario: Inverter output stage in HVAC variable-frequency drives operating from 400 V AC mains. IC Role / Device Role / Timing Role: Main switching device in 2-level voltage source inverter (VSI) leg. Use Value: Robust body diode and low C_iss allow reliable operation at 8–16 kHz PWM frequencies with minimal EMI filtering overhead.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1U 2 kW redundant AC/DC front-end modules.

IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward or LLC resonant topology.

Use Value: Low Q_g and R_DS(on) enable >96 % efficiency at full load while maintaining thermal headroom on compact heatsinks.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems handling 3 kW output.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch in continuous conduction mode (CCM) boost converter.

Use Value: Avalanche rating and controlled Q_rr prevent failure during line surges and ensure stable power factor correction across wide input range.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-phase inverter bridge legs.

Use Value: 600 V rating and 33 A current capacity support 5–10 kW inverters with reduced conduction loss vs. older 650 V MOSFETs.

Use Scenario: Inverter output stage in HVAC variable-frequency drives operating from 400 V AC mains.

IC Role / Device Role / Timing Role: Main switching device in 2-level voltage source inverter (VSI) leg.

Use Value: Robust body diode and low C_iss allow reliable operation at 8–16 kHz PWM frequencies with minimal EMI filtering overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33NM60ND	600 V, 33 A, R_DS(on) = 0.095 Ω, Q_g = 120 nC, TO-247 long leads	Lower Q_g improves light-load efficiency but reduced E_AS (520 mJ) limits fault tolerance	Prefer when gate drive loss dominates and avalanche stress is low
IXTH30N60L2	600 V, 30 A, R_DS(on) = 0.11 Ω, Q_g = 95 nC, TO-247 non-isolated	Lower Q_g and faster t_rr (500 ns), but lower current rating and no avalanche rating	Choose for higher-frequency ZVS/ZCS topologies where ruggedness is managed externally

Compared with STW33NM60ND and IXTH30N60L2, SIHG33N60E-E3 offers superior avalanche ruggedness and higher continuous current, making it preferred for industrial and telecom power supplies where reliability under transient overload is critical-despite slightly higher Q_g.

Availability

SIHG33N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term production continuity.

Supply support for SIHG33N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The E Series power MOSFETs-including SIHG33N60E-E3-are engineered for high-efficiency, high-voltage switch-mode power conversion, emphasizing low FOM, rugged avalanche performance, and thermal robustness in TO-247 packages.

FAQ

What is the maximum continuous drain current rating for SIHG33N60E-E3 at 100 °C case temperature?

The SIHG33N60E-E3 supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual board layout, heatsink interface, and ambient airflow in the final design. The SIHG33N60E-E3 datasheet confirms this value under V_GS = 10 V conditions.

Does SIHG33N60E-E3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHG33N60E-E3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 793 mJ. The test condition is V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7.5 A, per Note b in the datasheet. This rating applies directly to the SIHG33N60E-E3 and is not extrapolated from other variants.

What is the gate threshold voltage range for SIHG33N60E-E3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SIHG33N60E-E3 is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Designers must ensure gate drive voltage exceeds 4.0 V to guarantee full enhancement; the SIHG33N60E-E3 specification sheet confirms this min/max spread applies to all units.

How does the body diode reverse recovery charge (Q_rr) of SIHG33N60E-E3 impact PFC boost converter design?

The SIHG33N60E-E3 body diode has Q_rr = 8.5–17 μC, which directly influences boost diode selection, dead-time optimization, and EMI filter sizing in continuous conduction mode (CCM) PFC. Higher Q_rr increases switching loss and voltage overshoot during recovery; the SIHG33N60E-E3 datasheet specifies this parameter at T_J = 25 °C, I_F = I_S, dI/dt = 100 A/μs, and V_R = 20 V.

Is SIHG33N60E-E3 RoHS-compliant and halogen-free, and what does the "-E3" suffix indicate?

Yes, SIHG33N60E-E3 is lead (Pb)-free and RoHS-compliant, as confirmed by Vishay's material declarations. The "-E3" suffix specifically denotes lead-free termination with matte tin plating, per Vishay's ordering nomenclature in document S24-0062. It is not halogen-free; that variant is designated "-GE3". This distinction is explicitly defined in the Ordering Information section of the SIHG33N60E-E3 datasheet.

SIHG33N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG33N60E-E3 FAQ

1.How can I place an order for SIHG33N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG33N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG33N60E-E3 reliable?

The price and inventory of SIHG33N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG33N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG33N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG33N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG33N60E-E3?

SIHG33N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG33N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG33N60E-E3?

For technical support, including SIHG33N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG33N60E-E3 requirements.

6.How does Aetrix verify that SIHG33N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG33N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG33N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG33N60E-E3?

All SIHG33N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG33N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG33N60E-E3 part is unused and in its original packaging.

Return procedure for SIHG33N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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