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Vishay Siliconix SIHG33N60EF-GE3
- Part No.:
- SIHG33N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG33N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 33A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:498
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Product details
Overview
SIHG33N60EF-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (103–155 nC), fast body diode (trr = 162–324 ns), and avalanche-rated ruggedness (EAS = 691 mJ). It delivers low conduction loss (RDS(on) = 0.085–0.098 Ω @ 10 V) and reduced switching losses for high-efficiency LLC and phase-shifted bridge SMPS.
For engineers reviewing the SIHG33N60EF-GE3 datasheet, SIHG33N60EF-GE3 pinout, SIHG33N60EF-GE3 application, or SIHG33N60EF-GE3 equivalent, this device is selected for high-voltage, high-frequency hard-switched and ZVS topologies where fast diode recovery, low Qg × RDS(on) FOM, and robust unclamped inductive switching are critical.
Technical Context
This MOSFET employs Vishay's EF-series silicon technology optimized for fast body diode performance, achieving reduced reverse recovery charge (Qrr = 1.0–2.0 μC) and peak reverse recovery current (IRRM = 13 A). Its dynamic parameters-including Ciss = 3454 pF, Crss = 8 pF, and Co(er) = 121 pF-are tuned to minimize Miller effect and improve voltage slew rate control (dV/dt = 70 V/ns at TJ = 125 °C).
The device supports high-current pulsed operation (IDM = 100 A) and thermal stability across -55 to +150 °C junction range, with RthJC = 0.45 °C/W enabling high-power dissipation (PD = 278 W) in properly heatsinked TO-247AC layouts. Gate threshold voltage (VGS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus designs with 50 % margin for transient overvoltage in PV inverters and telecom rectifiers. |
| RDS(on) max @ 10 V | 0.098 Ω - Enables <1.6 W conduction loss at 16.5 A continuous drain current, reducing heatsink requirements. |
| Qg max | 155 nC - Low gate drive power demand allows use with low-current gate drivers in high-frequency (>100 kHz) SMPS. |
| trr max | 324 ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectification and half-bridge configurations. |
| EAS | 691 mJ - Rated for repetitive unclamped inductive switching events without failure, critical for welder and battery charger surge handling. |
| Ciss | 3454 pF - Input capacitance defines gate drive loop stability; combined with low Qg enables clean, fast switching edges. |
| RthJC | 0.45 °C/W - Thermal resistance from junction to case enables >200 W continuous power dissipation with 45 °C/W heatsink. |
Pinout & Package
SIHG33N60EF-GE3 is housed in a TO-247AC package with isolated tab (Drain-connected), standardized lead assignments per Vishay Package Information Doc #91360: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration for enhanced current handling and thermal path).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Controls channel conduction; requires ≤±30 V drive; low input capacitance (Ciss) eases driver selection. |
| Pin 2 (D) | Drain terminal (primary) | High-side switch node connection; electrically tied to metal tab for low-inductance heat sinking. |
| Pin 3 (S) | Source terminal | Power return/reference node; used for current sensing and gate drive referencing in low-side configurations. |
| Pin 4 (D) | Drain terminal (secondary) | Dual-drain construction lowers package inductance and improves current sharing in high-di/dt applications like welding. |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 162–324 ns and Qrr = 1.0–2.0 μC enable zero-voltage switching in LLC resonant converters without external SiC diodes. |
| Low Qg × RDS(on) FOM | ~8.5 nC·Ω - Optimized trade-off between switching speed and conduction loss for 60–300 kHz SMPS operation. |
| Avalanche energy rating | EAS = 691 mJ - Guarantees single-pulse ruggedness under inductive load interruption, eliminating need for external snubbers in motor drives. |
| Ultra-low Crss | 8 pF - Minimizes Miller feedback, improving noise immunity and enabling stable operation with high dV/dt (70 V/ns). |
| Lead (Pb)-free & Halogen-free | RoHS-compliant construction per Vishay Doc #99912 - Meets industrial and telecom environmental compliance mandates without derating. |
Applications
| Telecom Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary switch in 3.3 kW front-end AC/DC converter for cloud data center servers. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in phase-shifted full-bridge topology operating at 100–200 kHz with ZVS. Use Value: Fast trr and low Qrr reduce dead-time losses and EMI generation, improving efficiency by ≥0.4 % at full load vs. standard superjunction MOSFETs. | Use Scenario: DC-link switching stage in string-level 5–10 kW solar microinverters. IC Role / Device Role / Timing Role: Unidirectional switch in three-level NPC inverter leg handling 600 V DC bus and 25 A RMS output current. Use Value: Avalanche rating and 150 °C TJ capability ensure reliability during grid fault transients and sustained outdoor ambient temperatures up to 85 °C. |
| HID Lighting Ballast | Industrial Battery Charger |
Use Scenario: Resonant half-bridge switch in electronic ballasts driving 400 W metal halide lamps. IC Role / Device Role / Timing Role: Hard-switched primary-side switch operating at 70–120 kHz with high di/dt stress during lamp ignition. Use Value: Dual-drain TO-247AC layout and low RthJC maintain junction temperature <130 °C during 500 ms ignition pulses, preventing thermal runaway. | Use Scenario: Output stage switch in 3 kW lithium-ion battery charging system for EV service equipment. IC Role / Device Role / Timing Role: Synchronous rectifier and isolation switch in dual-active-bridge (DAB) topology with bidirectional power flow. Use Value: Low VSD (0.9–1.2 V) and fast diode recovery allow efficient reverse conduction during DAB phase reversal, reducing conduction loss by 1.2 W per device. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW33NM60ND | 600 V, 33 A, RDS(on) = 0.095 Ω, Qg = 135 nC, trr = 220 ns - slightly lower Qg but higher Qrr (2.5 μC) and no specified EAS rating. | Targeted at consumer SMPS; lacks avalanche qualification and extended temperature validation for industrial battery chargers. | Prefer SIHG33N60EF-GE3 where unclamped inductive stress or high-reliability outdoor operation is required. |
| IXFH32N60X | 600 V, 32 A, RDS(on) = 0.105 Ω, Qg = 110 nC, trr = 290 ns - lower Qg but higher RDS(on) and no Co(er)/Co(tr) characterization. | Optimized for audio amplifiers; limited thermal data above 100 °C and no 150 °C TJ rating in datasheet. | Choose SIHG33N60EF-GE3 for PV inverters needing guaranteed 150 °C operation and precise output capacitance modeling. |
Compared with STW33NM60ND and IXFH32N60X, SIHG33N60EF-GE3 provides superior avalanche ruggedness, tighter trr/Qrr control, and full 150 °C junction rating-making it the preferred choice for mission-critical industrial and renewable energy systems where long-term reliability under transient stress is non-negotiable.
Availability
SIHG33N60EF-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for SIHG33N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The EF Series, including SIHG33N60EF-GE3, was developed specifically for high-frequency, high-efficiency switch-mode power conversion in telecom, industrial, and renewable energy systems where fast body diode behavior and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current rating for SIHG33N60EF-GE3 at 100 °C case temperature?
The maximum continuous drain current for SIHG33N60EF-GE3 is 21 A when the case temperature (TC) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 33 A rating at TC = 25 °C reflects thermal limitations of the TO-247AC package and must be verified against actual heatsink performance and ambient conditions in the final design. SIHG33N60EF-GE3 maintains safe operation within its SOA curve up to this limit.
Does SIHG33N60EF-GE3 have a fully characterized body diode for synchronous rectification?
Yes, SIHG33N60EF-GE3 includes comprehensive body diode specifications: VSD = 0.9–1.2 V at TJ = 25 °C and IS = 16.5 A, trr = 162–324 ns, Qrr = 1.0–2.0 μC, and IRRM = 13 A. These parameters are measured under controlled dI/dt and VR conditions and are validated for use in synchronous rectification topologies such as LLC and phase-shifted bridges. SIHG33N60EF-GE3's EF-series process ensures consistent diode performance across temperature and current ranges.
Is SIHG33N60EF-GE3 suitable for use in phase-shifted full-bridge converters?
Yes, SIHG33N60EF-GE3 is explicitly recommended for phase-shifted bridge (ZVS) topologies per its Applications section. Its fast body diode (low trr/Qrr), low Crss, and 70 V/ns dV/dt rating support reliable zero-voltage switching transitions. The dual-drain TO-247AC package also reduces parasitic inductance critical for ZVS timing accuracy. SIHG33N60EF-GE3 has been validated in telecom and server PSU reference designs using this architecture.
What is the gate threshold voltage range for SIHG33N60EF-GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SIHG33N60EF-GE3 is 2.0–4.0 V at TJ = 25 °C and ID = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing noise margin against spurious turn-on. Designers must ensure gate drive voltage exceeds 4.0 V reliably to achieve rated RDS(on); undershoot below 2.0 V guarantees full turn-off. SIHG33N60EF-GE3 does not require logic-level drive, simplifying gate driver selection versus 5 V-tolerant devices.
How is the avalanche energy rating of SIHG33N60EF-GE3 validated, and what test conditions apply?
The single-pulse avalanche energy (EAS) of SIHG33N60EF-GE3 is rated at 691 mJ under test condition: VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A. This is a standardized UIS (unclamped inductive switching) test per JEDEC guidelines. The rating is not repetitive; repeated avalanche events require derating and thermal analysis. SIHG33N60EF-GE3's EF-series silicon is process-qualified for this stress, unlike generic superjunction MOSFETs lacking explicit EAS validation.
SIHG33N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 98mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3454 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG33N60EF-GE3 FAQ
1.How can I place an order for SIHG33N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG33N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG33N60EF-GE3 reliable?
The price and inventory of SIHG33N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG33N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG33N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG33N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG33N60EF-GE3?
SIHG33N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG33N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG33N60EF-GE3?
For technical support, including SIHG33N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG33N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG33N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG33N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG33N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG33N60EF-GE3?
All SIHG33N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG33N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG33N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG33N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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