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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG33N60E-GE3

Name: SIHG33N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG33N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG33N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG33N60E-GE3.pdf

Description:: MOSFET N-CH 600V 33A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG33N60E-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.099 Ω @ V_GS = 10 V, Q_g = 150 nC max, and avalanche-rated (E_AS = 793 mJ). It serves as a high-voltage switching device in primary-side SMPS and PFC stages of telecom/server power supplies.

For engineers reviewing the SIHG33N60E-GE3 datasheet, SIHG33N60E-GE3 pinout, SIHG33N60E-GE3 application, or SIHG33N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, low gate charge for reduced switching loss, TO-247AC thermal performance (R_thJC = 0.45 °C/W), and integrated body diode with t_rr = 1006 ns max.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate structure minimizes Q_g and C_iss (3508 pF typ), enabling fast turn-on while maintaining robust dV/dt immunity (70 V/ns).

The device integrates an avalanche-rated body diode with Q_rr = 17 μC max and V_SD = 1.2 V max at 16.5 A, supporting synchronous rectification and inductive load handling in PFC and DC-DC converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full bridge or boost converter DC bus voltages up to 480 V with margin.
R_DS(on) max	0.099 Ω @ V_GS = 10 V - Enables <2.7 W conduction loss at 16.5 A continuous drain current.
Q_g max	150 nC - Reduces gate drive power requirement and enables use with standard 1–2 A peak gate drivers.
E_AS	793 mJ - Supports unclamped inductive switching in PFC and motor drive snubberless designs.
t_r/t_f	60/80 ns typ - Allows >200 kHz switching in hard-switched topologies with controlled EMI.
R_thJC	0.45 °C/W - Delivers 278 W power dissipation capability with minimal heatsink interface resistance.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drive and noise immunity above 1 V.

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard mechanical footprint (D = 20.55 mm, E = 15.70 mm, L = 15.15 mm). Thermal pad on drain side enables direct mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance node requiring <1 Ω gate resistor to damp ringing; connects to PWM controller output.
2 (Drain)	High-voltage power terminal	Electrically connected to metal tab; must be insulated from heatsink unless system ground referenced.
3 (Source)	Power return / reference	Serves as local ground reference for gate driver; carries full load current and diode recovery current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	9.9 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz PFC stages.
Avalanche energy rating	793 mJ single-pulse - Eliminates need for external clamping in inductive turn-off transients.
Body diode reverse recovery	Q_rr = 17 μC, t_rr = 1006 ns - Enables soft-recovery behavior in critical-conduction-mode (CRM) PFC.
High dV/dt immunity	70 V/ns - Prevents false turn-on during fast voltage transitions in high-side switch configurations.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - Meets industrial and telecom environmental requirements.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC-DC converter with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-side boost switch in continuous conduction mode (CCM) PFC controller circuit. Use Value: Low Q_g reduces gate driver losses; 600 V rating supports universal 85–264 VAC input with 480 VDC bus.	Use Scenario: Output rectification and isolation in -48 V telecom DC-DC brick with synchronous rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET driven by transformer-coupled gate signal. Use Value: Integrated body diode with low V_SD (1.2 V max) minimizes forward drop during dead-time conduction.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter leg. Use Value: Avalanche rating allows safe operation during short-circuit events without desaturation protection circuitry.	Use Scenario: Regenerative braking chopper in 7.5 kW HVAC inverter with dynamic braking resistor control. IC Role / Device Role / Timing Role: Energy-dumping switch activated during overvoltage conditions on DC bus. Use Value: 278 W power dissipation and 0.45 °C/W R_thJC support sustained 10 s pulse braking at full rated current.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC-DC converter with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-side boost switch in continuous conduction mode (CCM) PFC controller circuit.

Use Value: Low Q_g reduces gate driver losses; 600 V rating supports universal 85–264 VAC input with 480 VDC bus.

Use Scenario: Output rectification and isolation in -48 V telecom DC-DC brick with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET driven by transformer-coupled gate signal.

Use Value: Integrated body diode with low V_SD (1.2 V max) minimizes forward drop during dead-time conduction.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter leg.

Use Value: Avalanche rating allows safe operation during short-circuit events without desaturation protection circuitry.

Use Scenario: Regenerative braking chopper in 7.5 kW HVAC inverter with dynamic braking resistor control.

IC Role / Device Role / Timing Role: Energy-dumping switch activated during overvoltage conditions on DC bus.

Use Value: 278 W power dissipation and 0.45 °C/W R_thJC support sustained 10 s pulse braking at full rated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N60M2	600 V, 33 A, R_DS(on) = 0.095 Ω, Q_g = 120 nC, TO-247 long leads	Lower Q_g improves switching efficiency but requires tighter gate drive layout due to faster dv/dt.	Preferred where gate drive loop inductance is minimized and higher dV/dt immunity is not required.
IXFH32N60P	600 V, 32 A, R_DS(on) = 0.115 Ω, Q_g = 135 nC, TO-247 non-isolated drain	Higher R_DS(on) increases conduction loss; drain tab not electrically isolated from case.	Acceptable where heatsink isolation is not needed and thermal margin accommodates +15% R_DS(on).

Compared with STW33N60M2 and IXFH32N60P, the SIHG33N60E-GE3 offers superior avalanche ruggedness (793 mJ vs. 520 mJ and 650 mJ) and electrically isolated drain for flexible heatsink mounting-critical in multi-rail server PSUs.

Availability

SIHG33N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across extended production lifecycles.

Supply support for SIHG33N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching in telecom, server, and renewable energy systems-emphasizing low FOM, avalanche robustness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHG33N60E-GE3 at 100 °C case temperature?

The SIHG33N60E-GE3 supports 21 A continuous drain current at T_C = 100 °C, derated linearly from 33 A at 25 °C using the specified 2.2 W/°C derating factor. This rating assumes proper heatsinking and junction temperature maintained ≤150 °C per absolute maximum ratings.

Does SIHG33N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG33N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS = 793 mJ), tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7.5 A. The device passes this test without parameter degradation, confirming ruggedness in unclamped inductive switching.

What is the gate threshold voltage range for SIHG33N60E-GE3, and why does it matter for drive circuit design?

The SIHG33N60E-GE3 has a V_GS(th) range of 2.0–4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while providing noise margin against spurious turn-on from coupling or ringing-critical in high-dV/dt environments like PFC boost stages.

Can SIHG33N60E-GE3 be used in place of a logic-level MOSFET in 5 V gate drive applications?

No-SIHG33N60E-GE3 is not a logic-level device. Its minimum V_GS(th) is 2.0 V, but full enhancement requires ≥10 V for R_DS(on) ≤ 0.099 Ω. At 5 V gate drive, R_DS(on) exceeds 0.5 Ω, causing excessive conduction loss; a dedicated logic-level MOSFET such as SiHL012N60E is required for 5 V systems.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG33N60E-GE3, and how does it affect PFC performance?

The SIHG33N60E-GE3 body diode exhibits Q_rr = 8.5–17 μC, measured at T_J = 25 °C, I_F = I_S, dI/dt = 100 A/μs, and V_R = 20 V. This moderate Q_rr enables efficient operation in critical-conduction-mode (CRM) PFC, reducing diode-related switching loss and EMI compared to standard recovery diodes.

SIHG33N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG33N60E-GE3 FAQ

1.How can I place an order for SIHG33N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG33N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG33N60E-GE3 reliable?

The price and inventory of SIHG33N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG33N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG33N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG33N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG33N60E-GE3?

SIHG33N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG33N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG33N60E-GE3?

For technical support, including SIHG33N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG33N60E-GE3 requirements.

6.How does Aetrix verify that SIHG33N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG33N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG33N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG33N60E-GE3?

All SIHG33N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG33N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG33N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG33N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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