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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG33N65EF-GE3

Name: SIHG33N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHG33N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG33N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG33N65EF-GE3.pdf

Description:: MOSFET N-CH 650V 31.6A TO247AC

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Product details

Overview

SIHG33N65EF-GE3 from Vishay Siliconix is a 650 V, 31.6 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring fast body diode (E Series), ultra-low gate charge (114–171 nC), and low R_DS(on) of 0.095 Ω at V_GS = 10 V. It delivers high efficiency in ZVS LLC resonant converters and solar PV inverters.

For engineers reviewing the SIHG33N65EF-GE3 datasheet, SIHG33N65EF-GE3 pinout, SIHG33N65EF-GE3 application, or SIHG33N65EF-GE3 equivalent, key selection criteria include its 179 ns reverse recovery time, 1.18 µC Q_rr, avalanche-rated 508 mJ E_AS, and suitability for phase-shifted bridge topologies with dV/dt capability up to 70 V/ns.

Technical Context

This MOSFET employs Vishay's E Series fast-body-diode technology to reduce trr, Qrr, and IRRM-critical for minimizing switching losses in high-frequency resonant converters. Its low Ciss (4026 pF) and Co(er) (100 pF) support clean voltage transitions under hard-switching and ZVS conditions.

The device integrates an integral p–n junction body diode rated for 31.6 A continuous source-drain current and 93 A pulsed current, with V_SD = 0.9–1.2 V at 16.5 A and T_J = 25 °C. Thermal resistance R_thJC is 0.4 °C/W, enabling high-power dissipation in industrial SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus designs with 30 % margin for transient overvoltage in PV inverters and telecom rectifiers.
R_DS(on) max	0.109 Ω at 25 °C - Enables <1.8 W conduction loss at 16.5 A, reducing heatsink requirements in 1–3 kW power stages.
Q_g max	171 nC - Low gate drive energy reduces driver IC stress and allows use of lower-cost gate drivers in high-frequency LLC designs.
Q_rr	1.18 µC - Minimizes diode recovery loss and EMI generation during turn-on in phase-shifted full-bridge topologies.
E_AS	508 mJ - Rated unclamped inductive switching energy supports robust operation in welder and battery charger surge events.
trr	179 ns - Fast body diode recovery enables >200 kHz operation without excessive shoot-through risk in synchronous rectification.
R_thJC	0.4 °C/W - Allows 313 W power dissipation with ≤125 °C case temperature rise, supporting compact thermal design in enclosed power supplies.

Pinout & Package

TO-247AC package with isolated drain tab, standard 3-lead configuration, and industry-standard mechanical footprint per JEDEC outline. Thermal pad optional; lead finish uncontrolled in L1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; input capacitance Ciss = 4026 pF requires careful PCB layout to avoid ringing.
2 (Drain)	Main high-side power terminal	Connected to heat sink via isolated metal tab; handles full 650 V blocking and 93 A pulsed current.
3 (Source)	Reference node for gate drive and current sensing	Serves as return path for 31.6 A continuous current; low-inductance connection critical for stable switching waveforms.
4 (Drain)	Secondary drain connection	Parallel drain path for enhanced current sharing and reduced package inductance in high-dI/dt applications.

Key Features

Feature	Design Value
Fast body diode (E Series)	Reduces trr by >40 % vs. standard Si MOSFETs, enabling reliable ZVS operation in LLC and PSFB converters.
Low Q_g/R_DS(on) FOM	171 nC × 0.109 Ω = 18.6 - Optimized trade-off between switching and conduction loss for 100–300 kHz SMPS.
Avalanche energy rating	508 mJ single-pulse UIS - Eliminates need for external snubbers in inductive load switching circuits like welding inverters.
High dV/dt immunity	70 V/ns at T_J = 125 °C - Resists false turn-on in high-noise industrial environments with fast-rising bus voltages.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912.

Applications

Telecom Power Supply	Solar PV Inverter
Use Scenario: High-efficiency 3.5 kW server PSU using phase-shifted full-bridge topology with 400 V DC input. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 31.6 A peak current and 520 V V_DS stress during ZVS transitions. Use Value: 179 ns trr and 1.18 µC Q_rr minimize dead-time loss and improve light-load efficiency by >2.1 % vs. legacy 600 V MOSFETs.	Use Scenario: Two-level string inverter stage converting 600–1000 V DC from solar arrays into 230 V AC grid output. IC Role / Device Role / Timing Role: Upper-leg switching device in three-phase IGBT/MOSFET hybrid bridge, operating at 16 kHz with hard commutation. Use Value: 650 V V_DS rating and 508 mJ E_AS withstand line transients and lightning surges without failure in outdoor installations.
LED Driver	Industrial Battery Charger
Use Scenario: Constant-current 1200 W LED driver for stadium lighting using asymmetric half-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side active clamp circuit, conducting 31.6 A continuous current. Use Value: Low V_SD (0.9–1.2 V) and fast trr reduce forward conduction loss and reverse recovery loss by 35 % vs. discrete Schottky solutions.	Use Scenario: 10 kW lithium-ion battery charger for EV fleet depots using interleaved LLC with 800 V DC bus. IC Role / Device Role / Timing Role: Primary-side switch in resonant tank, subjected to repetitive 93 A pulsed current and 100 A/µs dI/dt during fault conditions. Use Value: 93 A I_DM and 0.4 °C/W R_thJC sustain 100 % duty-cycle operation with <85 °C junction rise under forced-air cooling.

Telecom Power Supply

Solar PV Inverter

Use Scenario: High-efficiency 3.5 kW server PSU using phase-shifted full-bridge topology with 400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 31.6 A peak current and 520 V V_DS stress during ZVS transitions.

Use Value: 179 ns trr and 1.18 µC Q_rr minimize dead-time loss and improve light-load efficiency by >2.1 % vs. legacy 600 V MOSFETs.

Use Scenario: Two-level string inverter stage converting 600–1000 V DC from solar arrays into 230 V AC grid output.

IC Role / Device Role / Timing Role: Upper-leg switching device in three-phase IGBT/MOSFET hybrid bridge, operating at 16 kHz with hard commutation.

Use Value: 650 V V_DS rating and 508 mJ E_AS withstand line transients and lightning surges without failure in outdoor installations.

LED Driver

Industrial Battery Charger

Use Scenario: Constant-current 1200 W LED driver for stadium lighting using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side active clamp circuit, conducting 31.6 A continuous current.

Use Value: Low V_SD (0.9–1.2 V) and fast trr reduce forward conduction loss and reverse recovery loss by 35 % vs. discrete Schottky solutions.

Use Scenario: 10 kW lithium-ion battery charger for EV fleet depots using interleaved LLC with 800 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in resonant tank, subjected to repetitive 93 A pulsed current and 100 A/µs dI/dt during fault conditions.

Use Value: 93 A I_DM and 0.4 °C/W R_thJC sustain 100 % duty-cycle operation with <85 °C junction rise under forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N65M5	650 V, 33 A, R_DS(on) = 0.095 Ω, Q_g = 120 nC, trr = 220 ns, TO-247 long leads	Higher trr increases switching loss in >150 kHz LLC; lacks EAS rating	Prefer SIHG33N65EF-GE3 where fast body diode and avalanche ruggedness are required.
IXFH32N65X2	650 V, 32 A, R_DS(on) = 0.095 Ω, Q_g = 125 nC, trr = 195 ns, TO-247 non-isolated drain	Non-isolated drain requires insulating washer; slightly higher Q_rr (1.3 µC)	SIHG33N65EF-GE3 offers better thermal interface and lower Q_rr for thermally constrained designs.

Compared with STW33N65M5 and IXFH32N65X2, SIHG33N65EF-GE3 provides superior reverse recovery performance (179 ns trr, 1.18 µC Q_rr) and certified avalanche energy (508 mJ), making it optimal for ZVS-critical and surge-prone industrial power systems where reliability outweighs marginal cost differences.

Availability

SIHG33N65EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply across multi-year production cycles.

Supply support for SIHG33N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The E Series power MOSFET product line targets high-efficiency, high-frequency switched-mode power supplies-including LLC resonant, phase-shifted bridge, and 3-level inverters-where fast body diode performance and low gate charge are essential.

FAQ

What is the maximum continuous drain current rating for SIHG33N65EF-GE3 at 100 °C case temperature?

The SIHG33N65EF-GE3 supports 20 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. At 25 °C case temperature, the rating rises to 31.6 A.

Does SIHG33N65EF-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHG33N65EF-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 508 mJ. The test condition is V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6.0 A, per datasheet note b. This rating validates ruggedness in inductive load switching applications like welders and motor drives.

What is the gate threshold voltage range for SIHG33N65EF-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage V_GS(th) for SIHG33N65EF-GE3 is 2.0–4.0 V at T_J = 25 °C and I_D = 250 µA. This range confirms compatibility with standard 10 V gate drivers but warns against marginal 5 V logic-level control. To ensure full enhancement and low R_DS(on), drive circuits must deliver ≥10 V with sufficient current to charge 171 nC Q_g rapidly.

How does the body diode performance of SIHG33N65EF-GE3 compare to standard 650 V MOSFETs?

The SIHG33N65EF-GE3 features Vishay's E Series fast body diode, delivering trr = 179 ns, Q_rr = 1.18 µC, and I_RRM = 12.6 A at T_J = 25 °C-up to 35 % lower Q_rr than conventional 650 V MOSFETs. This directly reduces turn-on switching loss and EMI in hard-commutated and resonant topologies.

Is SIHG33N65EF-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHG33N65EF-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. Its TO-247AC package meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and the "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction per Vishay doc# 99912.

SIHG33N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 109mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 171 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4026 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG33N65EF-GE3 FAQ

1.How can I place an order for SIHG33N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG33N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG33N65EF-GE3 reliable?

The price and inventory of SIHG33N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG33N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG33N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG33N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG33N65EF-GE3?

SIHG33N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG33N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG33N65EF-GE3?

For technical support, including SIHG33N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG33N65EF-GE3 requirements.

6.How does Aetrix verify that SIHG33N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG33N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG33N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG33N65EF-GE3?

All SIHG33N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG33N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG33N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG33N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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