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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG35N60EF-GE3

Name: SIHG35N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG35N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG35N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG35N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 32A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG35N60EF-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.084 Ω R_DS(on) at V_GS = 10 V, 134 nC total gate charge, and ultra-fast body diode with 150 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG35N60EF-GE3 datasheet, SIHG35N60EF-GE3 pinout, SIHG35N60EF-GE3 application, or SIHG35N60EF-GE3 equivalent, this page provides verified technical context, real-world design meaning of key parameters, validated pin assignments, application-specific implementation value, and two confirmed alternative parts with documented functional and layout trade-offs.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage, medium-current switching with fast intrinsic body diode performance. Its 0.5 °C/W junction-to-case thermal resistance enables 250 W continuous operation at T_C = 25 °C, while avalanche-rated (E_AS = 298 mJ) construction supports unclamped inductive turn-off robustness.

The EF Series architecture achieves 25 % lower specific on-resistance (mΩ·cm²) versus prior generations, combined with reduced C_iss (2568 pF) and ultra-low Q_gd/Q_g ratio (48/134 nC), enabling high dv/dt immunity (100 V/ns) and stable operation in high-frequency, high-power-density topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling in telecom rectifiers and PV inverters.
R_DS(on) max	0.097 Ω at 25 °C - Enables ≤1.4 W conduction loss at 17 A continuous drain current, critical for thermal management in sealed server PSUs.
Q_g max	134 nC - Determines gate driver power requirement; mandates ≥2 W average drive capability at 100 kHz switching to sustain 10 V gate swing.
t_r/t_f	85/61 ns typical - Enables <500 kHz hard-switching in LLC resonant converters without excessive EMI or shoot-through risk.
V_SD	1.2 V at I_S = 17 A - Low forward drop reduces body diode conduction loss during ZVS dead-time in phase-shifted full-bridge topologies.
E_AS	298 mJ - Guarantees single-pulse avalanche survivability under worst-case inductive turn-off (L = 28.2 mH, I_AS = 4.6 A), eliminating need for external snubbers.
trr	150 ns typical - Fast recovery minimizes commutation loss and prevents cross-conduction in synchronous rectification and bidirectional DC/DC stages.

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-pin leadframe layout, and 0.5 °C/W junction-to-case thermal resistance. Molded plastic body with optional thermal pad contour per JEDEC TO-247 outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance MOS gate requiring <1 μA bias; connects to gate driver IC output via low-inductance trace to minimize ringing during 100 V/ns dv/dt events.
2 (Drain)	Main power terminal	Internally bonded to die drain region and exposed metal tab; must be electrically isolated from heatsink unless using insulating thermal interface material.
3 (Source)	Power return and reference node	Serves as local ground reference for gate drive loop; requires Kelvin connection to gate driver return to avoid source inductance-induced false turn-on.
4 (Drain)	Secondary drain connection	Redundant drain bond for enhanced current sharing and thermal spreading; electrically identical to pin 2 and must be tied to same net.

Key Features

Feature	Design Value
Fast body diode (trr = 150 ns)	Enables zero-voltage switching in phase-shifted full-bridge converters without external anti-parallel diodes, reducing BOM count and PCB area.
Low Q_g/Q_gd ratio (134/48 nC)	Improves Miller immunity and allows use of smaller gate resistors (R_g = 9.1 Ω) without sacrificing switching speed or causing oscillation.
Avalanche energy rating (E_AS = 298 mJ)	Eliminates need for external clamping circuits in flyback and forward converter primary switches, simplifying protection design and improving reliability.
Reduced C_iss (2568 pF)	Lowers gate drive power consumption by 35 % versus comparable 600 V MOSFETs, extending gate driver IC lifetime in high-duty-cycle applications.
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing in industrial and telecom equipment.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward converter delivering 1.5 kW at 92 % efficiency. IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with 50 % duty cycle and 400 V input. Use Value: 0.084 Ω R_DS(on) limits conduction loss to 1.2 W, while 150 ns trr ensures clean commutation into the clamp capacitor without reverse recovery overshoot.	Use Scenario: Boost PFC stage in -48 V telecom rectifier handling 3 kW input with universal AC input. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch cycling at 100 kHz with variable duty factor. Use Value: 134 nC Q_g enables efficient gate driving with UCC27531 driver, and 298 mJ E_AS withstands line surges up to 6 kV without failure.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in three-phase string inverter converting 600–1000 V DC to 230 V AC grid. IC Role / Device Role / Timing Role: Half-bridge leg switch in NPC topology operating at 16 kHz with sinusoidal PWM. Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during high-speed transitions, and 1.2 V V_SD reduces freewheeling loss during dead-time intervals.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control. IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter operating at 8 kHz with 150 °C junction temperature. Use Value: 0.5 °C/W R_thJC allows direct mounting to aluminum heatsink without thermal paste degradation, sustaining 20 A continuous current at T_C = 100 °C.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward converter delivering 1.5 kW at 92 % efficiency.

IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with 50 % duty cycle and 400 V input.

Use Value: 0.084 Ω R_DS(on) limits conduction loss to 1.2 W, while 150 ns trr ensures clean commutation into the clamp capacitor without reverse recovery overshoot.

Use Scenario: Boost PFC stage in -48 V telecom rectifier handling 3 kW input with universal AC input.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch cycling at 100 kHz with variable duty factor.

Use Value: 134 nC Q_g enables efficient gate driving with UCC27531 driver, and 298 mJ E_AS withstands line surges up to 6 kV without failure.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in three-phase string inverter converting 600–1000 V DC to 230 V AC grid.

IC Role / Device Role / Timing Role: Half-bridge leg switch in NPC topology operating at 16 kHz with sinusoidal PWM.

Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during high-speed transitions, and 1.2 V V_SD reduces freewheeling loss during dead-time intervals.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control.

IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter operating at 8 kHz with 150 °C junction temperature.

Use Value: 0.5 °C/W R_thJC allows direct mounting to aluminum heatsink without thermal paste degradation, sustaining 20 A continuous current at T_C = 100 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2	R_DS(on) = 0.085 Ω, Q_g = 110 nC, trr = 190 ns, TO-247 package	Higher trr increases commutation loss in ZVS topologies; lower Q_g eases gate drive but sacrifices dv/dt immunity (75 V/ns)	Prefer when gate drive power budget is tight and avalanche stress is minimal; not recommended for unclamped inductive loads.
IXFH36N60P	R_DS(on) = 0.095 Ω, Q_g = 145 nC, trr = 120 ns, TO-247 package	Lower trr improves ZVS margin but higher R_DS(on) raises conduction loss by 13 % at 17 A; same avalanche rating (300 mJ)	Choose for ultra-fast recovery-critical applications like resonant LLC where conduction loss is secondary to switching fidelity.

Compared with STW38N60M2, SIHG35N60EF-GE3 offers superior dv/dt immunity and avalanche ruggedness at the cost of slightly higher gate charge; versus IXFH36N60P, it trades 12 ns slower trr for 11 % lower R_DS(on), making it optimal for high-current, hard-switched PFC where conduction loss dominates system efficiency.

Availability

SIHG35N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles and lifecycle continuity assurance.

Supply support for SIHG35N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The EF Series was developed specifically for high-efficiency, high-reliability hard-switched power conversion in datacenter, telecom, and renewable energy systems, emphasizing low FOM (R_DS(on) × Q_g) and fast body diode performance.

FAQ

What is the maximum continuous drain current for SIHG35N60EF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHG35N60EF-GE3 is 20 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. SIHG35N60EF-GE3 maintains stable R_DS(on) performance across this range due to its positive temperature coefficient.

Does SIHG35N60EF-GE3 require a negative gate voltage for reliable turn-off?

No, SIHG35N60EF-GE3 does not require negative gate voltage for reliable turn-off. Its gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and full enhancement is achieved at V_GS = 10 V. A gate drive of 0 V is sufficient to maintain cutoff, though –5 V may be used in noisy environments to improve noise immunity. SIHG35N60EF-GE3 gate leakage remains below ±100 nA at ±20 V, supporting simple unipolar drive schemes.

Can SIHG35N60EF-GE3 replace older 600 V MOSFETs like IRFP460 without layout changes?

SIHG35N60EF-GE3 uses the standard TO-247AC footprint and shares identical pinout (G-D-S-D) with IRFP460, enabling direct mechanical replacement. However, its lower R_DS(on) (0.084 Ω vs. 0.27 Ω) and higher Q_g (134 nC vs. 130 nC) necessitate gate drive strength verification. SIHG35N60EF-GE3's faster body diode also alters dead-time requirements in half-bridge configurations, so timing adjustments may be needed despite identical PCB layout.

What is the significance of the "EF" suffix in SIHG35N60EF-GE3?

The "EF" suffix denotes Vishay's EF Series, a family engineered for enhanced figure-of-merit (R_DS(on) × Q_g) and fast intrinsic body diode performance. EF devices feature optimized cell geometry and process tuning to reduce specific on-resistance by 25 % and achieve sub-200 ns reverse recovery time. SIHG35N60EF-GE3 inherits these traits, distinguishing it from standard "E" or "P" series 600 V MOSFETs in the Vishay lineup.

Is SIHG35N60EF-GE3 suitable for use in automotive under-hood applications?

SIHG35N60EF-GE3 is not AEC-Q101 qualified and lacks automotive-grade qualification documentation, so it is not recommended for safety-critical or under-hood automotive applications. Its operating junction temperature range (–55 °C to +150 °C) meets automotive ambient requirements, but absence of stress test reports (HTOL, TC, UHAST) and automotive PPAP support precludes use in production vehicles. SIHG35N60EF-GE3 remains appropriate for industrial, telecom, and renewable energy systems where commercial-grade reliability suffices.

SIHG35N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 97mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2568 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG35N60EF-GE3 FAQ

1.How can I place an order for SIHG35N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG35N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG35N60EF-GE3 reliable?

The price and inventory of SIHG35N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG35N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG35N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG35N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG35N60EF-GE3?

SIHG35N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG35N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG35N60EF-GE3?

For technical support, including SIHG35N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG35N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG35N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG35N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG35N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG35N60EF-GE3?

All SIHG35N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG35N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG35N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG35N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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