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Vishay Siliconix SIHG35N60E-GE3
- Part No.:
- SIHG35N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG35N60E-GE3.pdf
- Description:
- MOSFET N-CH 600V 32A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:5,477
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Product details
Overview
SIHG35N60E-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.082 Ω RDS(on) at VGS = 10 V, 132 nC total gate charge, and 691 mJ single-pulse avalanche energy - optimized for high-efficiency hard-switching PFC and SMPS stages in server power supplies and photovoltaic inverters.
For engineers reviewing the SIHG35N60E-GE3 datasheet, SIHG35N60E-GE3 pinout, SIHG35N60E-GE3 application, or SIHG35N60E-GE3 equivalent, this device delivers verified low conduction loss (RDS(on)), ultra-low Qg/Qgd ratio, and rugged UIS-rated operation critical for telecom rectifiers, LED drivers, and industrial motor drives requiring stable 600 V switching performance.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized cell pitch to achieve 25 % lower specific on-resistance (mΩ·cm²) versus prior generations. Its low Ciss (2760 pF) and minimized Crss/Ciss ratio reduce Miller-induced turn-off delay and improve dV/dt immunity.
The device integrates an intrinsic body diode rated for 32 A continuous source-drain current and 455–910 ns reverse recovery time (TJ = 25 °C), enabling reliable operation in synchronous rectification and freewheeling roles without external diode supplementation in many topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports full-bridge and two-switch forward designs up to 400 V DC bus with 50 % voltage margin |
| RDS(on) max | 0.094 Ω at TJ = 25 °C, VGS = 10 V - enables ≤ 26 W conduction loss at 17 A, reducing heatsink requirements |
| Qg max | 132 nC - determines gate driver peak current demand; requires ≥ 2 A driver for <100 ns switching transitions |
| EAS | 691 mJ - ensures robustness against unclamped inductive switching events in motor drive and welding applications |
| RthJC | 0.5 °C/W - allows direct mounting to heatsink; supports 250 W dissipation with ≤ 125 °C junction rise above case |
| ID continuous | 32 A at TC = 25 °C - defines maximum steady-state current under ideal thermal conditions |
| VGS(th) | 2–4 V - ensures clean turn-on with standard 10 V gate drive while avoiding spurious conduction near 0 V |
Pinout & Package
TO-247AC package: isolated drain tab (pins 2 & 4 electrically connected), non-isolated plastic body, 3.6 mm diameter mounting hole, 15.15 mm typical lead length, and 0.5 °C/W junction-to-case thermal resistance. Thermal pad optional per version.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | High-impedance input requiring low-charge driver; sensitive to ESD; connects to PWM controller output |
| 2 (Drain) | Main current path (high-side) | Electrically tied to metal tab; must be insulated from heatsink unless system ground-referenced |
| 3 (Source) | Reference node / return path | Common connection point for gate driver return, current sense resistor, and low-side switch source |
| 4 (Drain) | Secondary drain terminal | Redundant drain connection to reduce package inductance; soldered to same internal die metallization as pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| 25 % lower RDS(on)·area | Reduces conduction loss density by enabling smaller die or higher current in same footprint |
| Low Qg/Qgd ratio (≈ 2.9) | Minimizes Miller plateau duration and improves controllability during hard switching |
| Avalanche-rated (UIS) | Guarantees single-pulse ruggedness without derating in inductive load circuits |
| Lead (Pb)-free & Halogen-free | Meets RoHS 2011/65/EU and JEDEC JS709C material compliance requirements |
| Low Ciss (2760 pF) | Lowers gate drive power consumption and improves high-frequency efficiency in >100 kHz designs |
Applications
| Server Power Supply PFC Stage | Photovoltaic Inverter DC-DC Boost |
|---|---|
Use Scenario: Active front-end boost converter operating at 100 kHz with 600 V DC link and 20 A RMS input current. IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) PFC, handling full line-frequency ripple and fast transient response. Use Value: 0.082 Ω RDS(on) and 132 nC Qg enable >98.5 % efficiency at 3 kW while maintaining <100 °C junction temperature under forced air cooling. |
Use Scenario: Two-switch forward or interleaved boost stage converting 200–1000 V PV array output to 1200 V DC link for three-phase inverter. IC Role / Device Role / Timing Role: Main switching transistor in high-voltage DC-DC conversion, subjected to repetitive 600 V blocking and 15 A peak current. Use Value: 691 mJ EAS rating and 57 V/ns dV/dt capability ensure reliability during rapid irradiance transients and partial shading events. |
| Industrial Motor Drive Inverter | HID Lighting Ballast |
Use Scenario: 7.5 kW three-phase inverter driving induction motor with field-oriented control at 8 kHz PWM frequency. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V bridge leg, operating with 10 V gate drive and active short-circuit protection. Use Value: Low Qgd (46 nC) and fast fall time (32–64 ns) minimize shoot-through risk and reduce dead-time losses by >15 % vs. legacy MOSFETs. |
Use Scenario: Resonant half-bridge ballast powering 400 W high-intensity discharge lamp with 300 V ignition pulse and 250 V running voltage. IC Role / Device Role / Timing Role: High-side switch in self-oscillating resonant topology, enduring repeated 600 V re-strike pulses and high di/dt stress. Use Value: Body diode trr of 455–910 ns and 30 A IRRM support zero-voltage switching (ZVS) initiation without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW35N60DM6 | 650 V VDS, 0.085 Ω RDS(on), 110 nC Qg, D2PAK package | Lower thermal resistance not achievable; requires PCB copper area instead of heatsink mounting | Preferred for space-constrained board-level designs where TO-247 mechanical mounting is impractical |
| IXFH35N60X3 | 600 V VDS, 0.080 Ω RDS(on), 105 nC Qg, TO-247AD package with isolated tab | Isolated drain tab eliminates need for insulating washer; slightly faster tf (28 ns) | Selected when electrical isolation between drain and heatsink is mandatory for safety or noise reasons |
Compared with STW35N60DM6 and IXFH35N60X3, SIHG35N60E-GE3 offers superior junction-to-case thermal transfer (0.5 °C/W vs. ≥1.2 °C/W) and higher avalanche energy (691 mJ vs. 420–550 mJ), making it optimal for thermally demanding industrial and renewable energy systems where heatsink coupling is available.
Availability
SIHG35N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing facilities.
Supply support for SIHG35N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIHG35N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in computing, telecom, lighting, and renewable energy systems where low RDS(on) and rugged avalanche performance are critical.
FAQ
What is the maximum continuous drain current rating for SIHG35N60E-GE3 at 100 °C case temperature?
The SIHG35N60E-GE3 has a continuous drain current rating of 20 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be applied alongside RthJC = 0.5 °C/W to calculate actual junction temperature under operating conditions. The SIHG35N60E-GE3 maintains safe operation only when junction temperature remains ≤150 °C.
Does SIHG35N60E-GE3 support gate drive voltages below 10 V?
Yes - the SIHG35N60E-GE3 has a gate threshold voltage range of 2–4 V, allowing functional turn-on with 5 V logic-level drive; however, RDS(on) increases significantly below 10 V (e.g., ~0.12 Ω at VGS = 8 V), raising conduction losses. Full performance (0.082 Ω typ.) is guaranteed only at VGS = 10 V, and the device is not classified as a logic-level MOSFET. The SIHG35N60E-GE3 should be driven with ≥10 V for optimal efficiency in high-power applications.
What is the significance of the "-GE3" suffix in SIHG35N60E-GE3?
The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609A Class 3 moisture sensitivity level, with matte tin plating on leads and compliant molding compound. It confirms RoHS 2011/65/EU compliance and specifies the TO-247AC package variant with facility code Y or N per Vishay Package Document 91360. The SIHG35N60E-GE3 is not compatible with leaded solder reflow profiles and requires Pb-free assembly processes.
Can SIHG35N60E-GE3 replace older Vishay SiHF35N60E in existing designs?
Yes - the SIHG35N60E-GE3 is a direct drop-in replacement for SiHF35N60E, sharing identical TO-247AC package, pinout, absolute maximum ratings, and core electrical specifications (VDS, RDS(on), Qg, EAS). Key improvements include tighter RDS(on) distribution and enhanced UIS ruggedness. No PCB or gate drive changes are required when upgrading to SIHG35N60E-GE3, and the SIHG35N60E-GE3 maintains full backward compatibility in legacy PFC and SMPS designs.
How does the body diode performance of SIHG35N60E-GE3 impact its use in synchronous rectification?
The SIHG35N60E-GE3 body diode exhibits VSD = 0.9–1.2 V at 17 A and trr = 455–910 ns, which limits its effectiveness in high-frequency synchronous rectification due to recovery losses. While usable in quasi-resonant or low-frequency (<50 kHz) freewheeling, it is not optimized for ZVS/ZCS rectifier roles. For such applications, dedicated low-Qrr Schottky or SiC diodes are recommended alongside the SIHG35N60E-GE3 as the main switch.
SIHG35N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 94mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 132 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG35N60E-GE3 FAQ
1.How can I place an order for SIHG35N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG35N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG35N60E-GE3 reliable?
The price and inventory of SIHG35N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG35N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG35N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG35N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG35N60E-GE3?
SIHG35N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG35N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG35N60E-GE3?
For technical support, including SIHG35N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG35N60E-GE3 requirements.
6.How does Aetrix verify that SIHG35N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG35N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG35N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG35N60E-GE3?
All SIHG35N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG35N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG35N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHG35N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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