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Vishay Siliconix SIHG44N65EF-GE3
- Part No.:
- SIHG44N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG44N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 46A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:9,392
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Product details
Overview
SIHG44N65EF-GE3 from Vishay Siliconix is a 650 V, 44 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring ultra-low gate charge (Qg max. 278 nC), fast body diode (trr typ. 245 ns), and low RDS(on) of 0.063 Ω at VGS = 10 V. It is engineered for high-efficiency, high-frequency switch-mode power supplies including LLC resonant and phase-shifted bridge topologies.
For engineers reviewing the SIHG44N65EF-GE3 datasheet, SIHG44N65EF-GE3 pinout, SIHG44N65EF-GE3 application, or SIHG44N65EF-GE3 equivalent, key selection criteria include its 596 mJ single-pulse avalanche energy rating, 70 V/ns dv/dt capability, and optimized figure-of-merit (RDS(on) × Qg) for reduced conduction and switching losses in telecom and solar inverter designs.
Technical Context
This E-series MOSFET employs trench-gate silicon technology with an integrated fast-recovery body diode to minimize reverse recovery charge (Qrr typ. 2.2 μC) and peak reverse recovery current (IRRM typ. 26 A). Its low Ciss (5892 pF) and Crss (4 pF) support clean voltage transitions under high dv/dt stress.
The device operates with a gate threshold voltage range of 2.0–4.0 V and exhibits positive VDS temperature coefficient (0.75 V/°C), enabling inherent current sharing in paralleled configurations. Thermal resistance RthJC is 0.3 °C/W, supporting high-power dissipation up to 417 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max. | 650 V - supports primary-side switching in 400 V DC bus and 3-phase rectified applications without derating |
| RDS(on) typ. | 0.063 Ω at VGS = 10 V - enables <1.5 W conduction loss at 22 A continuous drain current |
| Qg max. | 278 nC - reduces gate drive power requirement and allows use with standard 1–2 A peak gate drivers |
| trr typ. | 245 ns - minimizes dead-time losses and EMI generation in ZVS topologies |
| EAS | 596 mJ - provides robust unclamped inductive switching margin for hard-switched SMPS stages |
| dv/dt rating | 70 V/ns - ensures reliable operation in high-speed, high-voltage switching nodes with minimal false turn-on risk |
| Co(er) | 178 pF - defines energy stored in output capacitance during hard-switching transitions, directly impacting turn-off loss |
Pinout & Package
SIHG44N65EF-GE3 is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and high thermal conductivity. The package features a 0.3 °C/W junction-to-case thermal resistance and lead (Pb)-free/halogen-free construction per JEDEC TO-247 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 10 V logic-level gate drive; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers |
| 2 (Drain) | High-side power terminal | Connected to drain metallization and case tab; electrically tied to heatsink - requires reinforced insulation in high-voltage layouts |
| 3 (Source) | Reference node / return path | Serves as common reference for gate drive and current sensing; low-inductance layout critical for minimizing shoot-through risk |
| 4 (Drain) | Secondary drain connection | Duplicate drain terminal for improved current distribution and reduced package inductance in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 245 ns and Qrr = 2.2 μC - cuts reverse recovery losses by >50% vs. standard MOSFETs in bridge-leg commutation |
| Low RDS(on) × Qg FOM | 13.9 Ω·nC - balances conduction and switching efficiency for optimal total system loss in 100–500 kHz SMPS |
| Avalanche-rated | EAS = 596 mJ - eliminates need for external snubbers in inductive load switching and improves system ruggedness |
| High dv/dt immunity | 70 V/ns - suppresses parasitic turn-on in high-frequency half-bridge operation without requiring negative gate bias |
| Thermal performance | RthJC = 0.3 °C/W - enables compact heatsink design and sustained 46 A continuous operation at TC = 25 °C |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side and low-side synchronous switch handling 400 V DC input and 100 kHz ZVS transitions. Use Value: Fast body diode and low Qrr reduce circulating current losses and improve efficiency by 0.8% at full load vs. standard 650 V MOSFETs. |
Use Scenario: DC-link switching stage in string-type solar inverter with 1000 V DC input and three-level NPC architecture. IC Role / Device Role / Timing Role: Upper-leg switching device operating at 16 kHz with bidirectional current flow during reactive power control. Use Value: 650 V rating with 596 mJ EAS withstands voltage overshoot during grid fault conditions without clamping circuitry. |
| HID Lighting Ballast | Industrial Battery Charger |
Use Scenario: Resonant half-bridge driver for 400 W metal halide lamp with 250 kHz switching frequency. IC Role / Device Role / Timing Role: Low-side switch managing high di/dt (110 A/μs) during lamp ignition and steady-state regulation. Use Value: Low Ciss and Crss ensure stable zero-voltage switching across wide load range, reducing EMI filter size by 30%. |
Use Scenario: Isolated DC-DC stage in 10 kW EVSE charger converting 800 V battery voltage to 48 V auxiliary supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward converter operating at 200 kHz. Use Value: Ultra-low RDS(on) and fast body diode enable >98.2% conversion efficiency while maintaining <65 °C junction rise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | Higher RDS(on) (0.072 Ω), higher Qg (320 nC), same 650 V rating and TO-247 package | Lower switching efficiency in >150 kHz designs due to higher Qrr (3.5 μC) and slower trr (340 ns) | Prefer SIHG44N65EF-GE3 where ZVS operation, minimal dead time, or thermal headroom is critical |
| IXFH44N65X2 | Same RDS(on) (0.063 Ω), lower Qg (195 nC), but no avalanche rating (EAS not specified) and higher Coss (320 pF) | Not suitable for unclamped inductive loads or systems requiring intrinsic ruggedness without external protection | Choose SIHG44N65EF-GE3 when system-level reliability demands guaranteed avalanche withstand capability |
Compared with STW48N65M5 and IXFH44N65X2, SIHG44N65EF-GE3 delivers superior switching efficiency in ZVS topologies via lower Qrr and trr, while its rated EAS provides verified ruggedness for industrial-grade power conversion without added protection components.
Availability
SIHG44N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHG44N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The E-series Power MOSFET product line, including SIHG44N65EF-GE3, was designed specifically for high-frequency, high-efficiency switch-mode power supplies in telecom, renewable energy, and industrial applications.
FAQ
What is the maximum continuous drain current rating for SIHG44N65EF-GE3 at 100 °C case temperature?
The SIHG44N65EF-GE3 has a continuous drain current rating of 29 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 46 A rating at TC = 25 °C, based on a linear derating factor of 3.3 W/°C and RthJC = 0.3 °C/W. Engineers must verify PCB copper area and heatsink interface to sustain this current in real-world thermal environments.
Does SIHG44N65EF-GE3 support gate drive voltages below 10 V?
Yes, SIHG44N65EF-GE3 has a gate threshold voltage range of 2.0–4.0 V, allowing operation with gate drive voltages as low as 5 V. However, RDS(on) increases significantly below VGS = 10 V - e.g., at VGS = 8 V, RDS(on) rises to ~0.078 Ω. For optimal conduction loss and switching speed, 10–15 V gate drive is recommended, and negative turn-off bias is not required due to its 70 V/ns dv/dt immunity.
How does the fast body diode in SIHG44N65EF-GE3 improve LLC resonant converter performance?
The SIHG44N65EF-GE3's fast body diode reduces trr to 245 ns and Qrr to 2.2 μC, which minimizes reverse recovery losses during zero-current switching transitions in LLC converters. This directly lowers heat generation in synchronous rectification stages, improves light-load efficiency, and reduces EMI caused by diode snap-off - enabling tighter magnetic design and smaller output filters compared to standard 650 V MOSFETs.
Is SIHG44N65EF-GE3 suitable for use in phase-shifted bridge (PSB) topologies with ZVS?
Yes, SIHG44N65EF-GE3 is explicitly qualified for phase-shifted bridge topologies. Its low Qgd (76 nC), low Crss (4 pF), and fast body diode enable reliable ZVS across wide load ranges. The datasheet confirms suitability for PSB applications, and its 70 V/ns dv/dt rating prevents spurious turn-on during high dV/dt transitions typical in PSB operation - making SIHG44N65EF-GE3 a preferred choice for high-efficiency 1–5 kW telecom and server PSUs.
What is the significance of the "-GE3" suffix in SIHG44N65EF-GE3?
The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging standard compliant with RoHS Directive 2011/65/EU and JEDEC JS709A. It indicates the device uses matte tin-plated leads, meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1, and is qualified for reflow soldering up to 260 °C peak temperature for 10 seconds. This suffix distinguishes it from legacy Pb-containing variants and ensures compatibility with modern eco-conscious manufacturing processes.
SIHG44N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 73mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 278 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5892 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 417W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG44N65EF-GE3 FAQ
1.How can I place an order for SIHG44N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG44N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG44N65EF-GE3 reliable?
The price and inventory of SIHG44N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG44N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG44N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG44N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG44N65EF-GE3?
SIHG44N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG44N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG44N65EF-GE3?
For technical support, including SIHG44N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG44N65EF-GE3 requirements.
6.How does Aetrix verify that SIHG44N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG44N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG44N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG44N65EF-GE3?
All SIHG44N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG44N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG44N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG44N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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