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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG460B-GE3

Name: SIHG460B-GE3
Brand: Vishay Siliconix
SKU: SIHG460B-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG460B-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG460B-GE3.pdf

Description:: MOSFET N-CH 500V 20A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG460B-GE3 from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.25 Ω at V_GS = 10 V, Q_g = 170 nC, and avalanche-rated (E_AS = 281 mJ). It serves as a high-voltage switching element in industrial SMPS, PFC stages, and motor drive half-bridges.

For engineers reviewing the SIHG460B-GE3 datasheet, SIHG460B-GE3 pinout, SIHG460B-GE3 application, or SIHG460B-GE3 equivalent, key selection criteria include its 500 V V_DS rating, low gate charge for hard-switched topologies, rugged body diode with t_rr = 437 ns, and thermal resistance R_thJC = 0.45 °C/W for high-power conduction.

Technical Context

This device uses planar V-groove silicon technology optimized for high-voltage power conversion. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while C_iss = 3094 pF and C_oss = 152 pF support predictable switching behavior in resonant and hard-switched converters.

The integrated body diode is rated for continuous 20 A source-drain current and exhibits controlled reverse recovery (Q_rr = 5.9 μC, I_RRM = 25 A), enabling use in freewheeling paths without external diode supplementation in many medium-frequency (<100 kHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V in PFC and offline SMPS with margin for transients.
R_DS(on) max	0.25 Ω at V_GS = 10 V, T_J = 25 °C - Enables <1 W conduction loss at 20 A, suitable for 300–500 W power stages.
Q_g max	170 nC - Requires ≥2 W average gate drive power at 100 kHz switching, dictating driver IC selection (e.g., IR2110).
E_AS	281 mJ - Supports unclamped inductive switching events in motor drives and relay drivers without failure.
t_r/t_f	31/56 ns - Fast edge rates enable efficient operation in 50–100 kHz hard-switched topologies with minimized overlap loss.
R_thJC	0.45 °C/W - Allows 278 W dissipation with ≤125 °C junction rise over case, requiring active heatsinking above ~100 W.
I_D cont	20 A at T_C = 25 °C - Rated for continuous conduction in TO-247 heatsink-mounted configurations with forced air or large copper planes.

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connect to drain), standard 3-pin layout, and 0.45 °C/W junction-to-case thermal path. Mounting requires mechanical isolation of drain tab from heatsink unless system ground reference permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control input; requires low-inductance gate loop and 10–15 V drive for full enhancement.
2 (Tab)	Drain	Main high-side power terminal; electrically connected to metal tab - must be insulated or grounded per layout.
3 (Lead)	Source	Power return and gate reference node; connects to PCB ground plane or low-side switch source.
4 (Second Tab Contact)	Drain	Redundant drain connection on same metal tab - improves current sharing and thermal spreading in high-current layouts.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	42.5 Ω·nC - Reduces combined conduction and switching losses versus legacy 500 V MOSFETs in 50–100 kHz converters.
Avalanche energy rating	281 mJ single-pulse - Eliminates need for external snubbers in inductive load switching (e.g., solenoid drivers).
Rugged body diode	t_rr = 437 ns, Q_rr = 5.9 μC - Minimizes voltage overshoot during commutation in half-bridge freewheeling paths.
High dV/dt immunity	24 V/ns at T_J = 125 °C - Resists false turn-on in high-noise environments like industrial motor inverters.
RoHS-compliant & halogen-free	SiHG460B-GE3 suffix - Meets IPC-1752A material declaration requirements for green electronics manufacturing.

Applications

Industrial Motor Drives	Server Power Supply PFC
Use Scenario: Half-bridge output stage in 1–3 kW variable-frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with 20 A peak phase current. Use Value: Avalanche rating absorbs inductive kickback during PWM dead-time; low Q_g enables efficient 16 kHz carrier frequency operation.	Use Scenario: Boost switch in active PFC front-end of 80 PLUS Titanium server PSUs. IC Role / Device Role / Timing Role: Main energy-transfer switch operating at 65–100 kHz with 400 V output voltage. Use Value: 500 V V_DS provides 25 % margin over 400 V bus; R_DS(on) = 0.25 Ω limits conduction loss to <1.5 W at full load.
Induction Heating Inverters	Welding Power Stages
Use Scenario: Full-bridge inverter in 10–20 kHz resonant induction cooktops and heating systems. IC Role / Device Role / Timing Role: Hard-switched bridge leg device conducting 15–25 A RMS with high di/dt demands. Use Value: Body diode ruggedness supports zero-voltage switching transitions; fast t_r/t_f reduces switching loss at 20 kHz.	Use Scenario: Primary-side switch in IGBT-assisted or all-MOSFET arc welding inverters (1–5 kW). IC Role / Device Role / Timing Role: High-current, high-repetition-rate switching element in 20–50 kHz inverter legs. Use Value: 62 A pulsed rating handles short-circuit weld initiation surges; TO-247AC package supports >200 W thermal dissipation.

Industrial Motor Drives

Server Power Supply PFC

Use Scenario: Half-bridge output stage in 1–3 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with 20 A peak phase current.

Use Value: Avalanche rating absorbs inductive kickback during PWM dead-time; low Q_g enables efficient 16 kHz carrier frequency operation.

Use Scenario: Boost switch in active PFC front-end of 80 PLUS Titanium server PSUs.

IC Role / Device Role / Timing Role: Main energy-transfer switch operating at 65–100 kHz with 400 V output voltage.

Use Value: 500 V V_DS provides 25 % margin over 400 V bus; R_DS(on) = 0.25 Ω limits conduction loss to <1.5 W at full load.

Induction Heating Inverters

Welding Power Stages

Use Scenario: Full-bridge inverter in 10–20 kHz resonant induction cooktops and heating systems.

IC Role / Device Role / Timing Role: Hard-switched bridge leg device conducting 15–25 A RMS with high di/dt demands.

Use Value: Body diode ruggedness supports zero-voltage switching transitions; fast t_r/t_f reduces switching loss at 20 kHz.

Use Scenario: Primary-side switch in IGBT-assisted or all-MOSFET arc welding inverters (1–5 kW).

IC Role / Device Role / Timing Role: High-current, high-repetition-rate switching element in 20–50 kHz inverter legs.

Use Value: 62 A pulsed rating handles short-circuit weld initiation surges; TO-247AC package supports >200 W thermal dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 12 nC - Lower current, much lower Q_g, but higher R_DS(on).	Targeted at <100 W flyback and low-power SMPS; unsuitable for 20 A continuous loads.	Select only for space-constrained, low-current designs where gate drive simplicity outweighs conduction loss.
IXFH40N50P	500 V, 40 A, R_DS(on) = 0.12 Ω, Q_g = 220 nC - Higher current, lower R_DS(on), higher Q_g, TO-247 package.	Optimized for >500 W continuous conduction; requires stronger gate driver due to higher Q_g.	Choose when thermal headroom is limited and conduction loss dominates; verify gate driver capability for 220 nC.

Compared with STP5NK50ZFP, SIHG460B-GE3 delivers 4.4× higher current and lower conduction loss but demands more gate drive power; versus IXFH40N50P, it trades 20 A lower current for 30 % lower Q_g, easing driver design in mid-power 300–500 W systems.

Availability

SIHG460B-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, server PFC circuits, and induction heating inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG460B-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The D Series power MOSFETs, including SIHG460B-GE3, were engineered for high-efficiency, high-voltage switching in industrial and telecom power supplies - emphasizing avalanche ruggedness, low FOM, and robust body diode performance.

FAQ

What is the maximum continuous drain current rating for SIHG460B-GE3 at 100 °C case temperature?

The SIHG460B-GE3 is rated for 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual board-level thermal resistance in the target application layout. SIHG460B-GE3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHG460B-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG460B-GE3 is fully rated for single-pulse avalanche energy (E_AS = 281 mJ), tested per JEDEC JESD24-1 with V_DD = 50 V, L = 10 mH, R_g = 25 Ω, and I_AS = 7.5 A. This rating applies to non-repetitive inductive switching events and is not intended for repetitive avalanche operation. SIHG460B-GE3 data sheet specifies no repetitive avalanche limit.

Can SIHG460B-GE3 be used with 5 V logic-level gate drive?

No - SIHG460B-GE3 has a gate threshold voltage range of 2–4 V and requires V_GS = 10 V for guaranteed R_DS(on) ≤ 0.25 Ω. At 5 V gate drive, R_DS(on) increases significantly (typical >1.2 Ω), causing excessive conduction loss. SIHG460B-GE3 must be driven with a dedicated 10–15 V gate driver, not direct microcontroller GPIO.

What is the body diode forward voltage of SIHG460B-GE3 at 10 A and 25 °C?

The body diode forward voltage (V_SD) of SIHG460B-GE3 is specified as 1.2 V maximum at I_S = 10 A, T_J = 25 °C, and V_GS = 0 V. This value is critical for freewheeling efficiency in half-bridge and synchronous rectifier configurations. SIHG460B-GE3 body diode exhibits soft recovery with Q_rr = 5.9 μC.

Is SIHG460B-GE3 RoHS-compliant and halogen-free?

Yes - the "-GE3" suffix explicitly denotes lead-free and halogen-free construction per Vishay's material compliance standards (IPC-1752A, IEC 61249-2-21). SIHG460B-GE3 meets RoHS Directive 2011/65/EU and contains <900 ppm bromine and <900 ppm chlorine by weight. Lead-containing variants (e.g., IRFP460BPbF) are not RoHS-compliant.

SIHG460B-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3094 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG460B-GE3 FAQ

1.How can I place an order for SIHG460B-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG460B-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG460B-GE3 reliable?

The price and inventory of SIHG460B-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG460B-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG460B-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG460B-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG460B-GE3?

SIHG460B-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG460B-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG460B-GE3?

For technical support, including SIHG460B-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG460B-GE3 requirements.

6.How does Aetrix verify that SIHG460B-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG460B-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG460B-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG460B-GE3?

All SIHG460B-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG460B-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG460B-GE3 part is unused and in its original packaging.

Return procedure for SIHG460B-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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