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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N60AE-GE3

Name: SIHG47N60AE-GE3
Brand: Vishay Siliconix
SKU: SIHG47N60AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N60AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N60AE-GE3.pdf

Description:: MOSFET N-CH 600V 43A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG47N60AE-GE3 from Vishay Siliconix is a 600 V, 43 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.056 Ω (typ. at V_GS = 10 V), Q_g = 121 nC (typ.), and 614 mJ avalanche energy rating. It serves as a primary switching device in high-efficiency PFC and main-switch stages of telecom/server SMPS.

For engineers reviewing the SIHG47N60AE-GE3 datasheet, SIHG47N60AE-GE3 pinout, SIHG47N60AE-GE3 application, or SIHG47N60AE-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, robust unclamped inductive switching capability, and thermal resistance R_thJC = 0.4 °C/W for high-power density designs.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for hard-switched and resonant topologies. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while its C_iss = 3600 pF (typ.) and C_oss = 177 pF (typ.) support predictable switching behavior under 480 V bus conditions.

The integrated body diode exhibits t_rr = 589–1178 ns and Q_rr = 9.8–19.6 μC at T_J = 25 °C, enabling moderate-frequency operation in continuous conduction mode (CCM) PFC without requiring external SiC diodes in cost-sensitive designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage
R_DS(on) typ.	0.056 Ω at V_GS = 10 V - enables <1.3 W conduction loss at 24 A, critical for thermal management in 1–3 kW PFC stages
Q_g max	182 nC - determines gate driver current requirement (~1.8 A peak for 100 ns rise time)
E_AS	614 mJ - withstands single-pulse inductive energy during fault events without failure
R_thJC	0.4 °C/W - allows >250 W power dissipation with 100 °C case temperature rise, supporting compact heatsink design
I_D cont.	43 A at T_C = 25 °C - defines maximum continuous current under ideal heatsinking conditions
t_rr	589 ns (typ.) - limits reverse recovery losses in hard-switched totem-pole PFC configurations

Pinout & Package

SIHG47N60AE-GE3 is housed in a TO-247AC package with isolated drain tab, optimized for high-voltage isolation and thermal transfer via mounting to heatsink. The package features three leads: Gate (pin 1), Drain (pins 2 and 4), Source (pin 3), per Vishay's official lead assignment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires low-impedance path to minimize ringing and ensure fast, controlled turn-on/turn-off
2 & 4 (Drain)	High-side power terminal	Electrically connected to internal die drain; both pins must be routed to high-voltage DC bus with equal current sharing
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be low-inductance connection to minimize V_GS disturbance during switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.8 Ω·nC (0.056 Ω × 121 nC) - reduces combined conduction and switching losses in high-frequency SMPS
Avalanche-rated	614 mJ single-pulse UIS - eliminates need for external snubbers in inductive load switching applications
Ultra-low Q_gd/Q_g ratio	51 % (62/121 nC) - improves Miller immunity and enables stable operation with moderate gate resistors
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard - suitable for environmentally regulated industrial and telecom equipment
Body diode Q_rr	9.8 μC (typ.) - enables predictable reverse recovery behavior in CCM boost PFC without external diode replacement

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–2 kW output from 380 V DC bus. IC Role / Device Role / Timing Role: High-side synchronous rectifier and main power switch operating at 100–300 kHz with zero-voltage switching. Use Value: Low C_oss (177 pF) and high E_AS (614 mJ) ensure reliable soft-switching transitions and fault tolerance during line surges.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier converting 200–277 V AC input to 400 V DC bus. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in continuous conduction mode (CCM) boost topology. Use Value: 0.056 Ω R_DS(on) minimizes conduction loss at full load, while 121 nC Q_g enables efficient gate driving with standard 1 A drivers.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level MPPT converters handling up to 1000 V DC input. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling energy flow between PV array and DC bus capacitor. Use Value: 600 V V_DS rating provides 20 % margin over 800 V DC-link transients, and 0.4 °C/W R_thJC supports forced-air cooling in compact enclosures.	Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive powering 3-phase induction motors. IC Role / Device Role / Timing Role: Main IGBT replacement in 6–16 kHz PWM inverter stages where lower switching loss is prioritized. Use Value: 182 nC Q_g max enables gate drive compatibility with existing IGBT driver ICs, reducing redesign effort.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–2 kW output from 380 V DC bus.

IC Role / Device Role / Timing Role: High-side synchronous rectifier and main power switch operating at 100–300 kHz with zero-voltage switching.

Use Value: Low C_oss (177 pF) and high E_AS (614 mJ) ensure reliable soft-switching transitions and fault tolerance during line surges.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier converting 200–277 V AC input to 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in continuous conduction mode (CCM) boost topology.

Use Value: 0.056 Ω R_DS(on) minimizes conduction loss at full load, while 121 nC Q_g enables efficient gate driving with standard 1 A drivers.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level MPPT converters handling up to 1000 V DC input.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling energy flow between PV array and DC bus capacitor.

Use Value: 600 V V_DS rating provides 20 % margin over 800 V DC-link transients, and 0.4 °C/W R_thJC supports forced-air cooling in compact enclosures.

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive powering 3-phase induction motors.

IC Role / Device Role / Timing Role: Main IGBT replacement in 6–16 kHz PWM inverter stages where lower switching loss is prioritized.

Use Value: 182 nC Q_g max enables gate drive compatibility with existing IGBT driver ICs, reducing redesign effort.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (typ.), Q_g = 110 nC (typ.), TO-247 package	Higher conduction loss but lower gate charge; slightly reduced avalanche rating (E_AS = 520 mJ)	Prefer when gate drive strength is limited and thermal margin exists for higher R_DS(on).
IXFH52N60P	R_DS(on) = 0.060 Ω (typ.), Q_g = 145 nC (typ.), TO-247 package	Higher Q_g increases driver loss; superior dV/dt ruggedness (125 V/ns vs. 100 V/ns)	Prefer in noisy industrial environments where high dV/dt immunity is required over minimal gate loss.

Compared with STW48N60M2 and IXFH52N60P, SIHG47N60AE-GE3 delivers the lowest R_DS(on) × Q_g product (6.8 Ω·nC), making it optimal for thermally constrained, high-efficiency PFC and SMPS designs where both conduction and switching losses must be minimized simultaneously.

Availability

SIHG47N60AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG47N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHG47N60AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for efficiency-critical, high-power-density switch-mode power conversion in industrial and infrastructure systems.

FAQ

What is the maximum continuous drain current rating for SIHG47N60AE-GE3 at 100 °C case temperature?

The SIHG47N60AE-GE3 has a continuous drain current rating of 27 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 0.4 °C/W and actual power dissipation to ensure T_J ≤ 150 °C.

Does SIHG47N60AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHG47N60AE-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 614 mJ, tested per JEDEC JESD24-1. This rating applies under conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6.6 A. It enables robust operation in inductive switching circuits without external protection components.

What is the typical gate threshold voltage range for SIHG47N60AE-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHG47N60AE-GE3 is specified as 2.0–4.0 V at T_J = 25 °C and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing sufficient noise margin against false turn-on in high-dV/dt environments typical of high-power converters.

Can SIHG47N60AE-GE3 be used in place of an IGBT in motor drive inverters?

SIHG47N60AE-GE3 can replace IGBTs in motor drive inverters operating below 16 kHz, particularly where reduced switching loss and simplified gate drive are priorities. Its 600 V rating, 43 A current capability, and low Q_g support efficient PWM control, though designers must verify short-circuit withstand time and body diode recovery performance against specific motor load profiles.

What is the thermal resistance from junction to case (R_thJC) for SIHG47N60AE-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG47N60AE-GE3 is 0.4 °C/W, measured from the die junction to the drain tab surface. This value is critical for calculating heatsink requirements: for example, at 200 W power dissipation and 100 °C allowable case-to-ambient rise, the heatsink must maintain T_C ≤ 100 °C to keep T_J ≤ 150 °C.

SIHG47N60AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 182 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N60AE-GE3 FAQ

1.How can I place an order for SIHG47N60AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N60AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N60AE-GE3 reliable?

The price and inventory of SIHG47N60AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG47N60AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N60AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG47N60AE-GE3?

SIHG47N60AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N60AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N60AE-GE3?

For technical support, including SIHG47N60AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60AE-GE3 requirements.

6.How does Aetrix verify that SIHG47N60AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N60AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG47N60AE-GE3?

All SIHG47N60AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N60AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG47N60AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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