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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N60AEL-GE3

Name: SIHG47N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHG47N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 47A TO247AC

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Product details

Overview

SIHG47N60AEL-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.053 Ω (typ) at V_GS = 10 V, Q_g = 111 nC (typ), and E_AS = 691 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHG47N60AEL-GE3 datasheet, SIHG47N60AEL-GE3 pinout, SIHG47N60AEL-GE3 application, or SIHG47N60AEL-GE3 equivalent, key selection criteria include its low gate charge, avalanche-rated ruggedness, 0.33 °C/W R_thJC, and validated performance under 480 V DC bus conditions with 23.5 A conduction.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low figure-of-merit (R_DS(on) × Q_g = 5.9 nΩ·F), reduced C_iss (4600 pF) and ultra-low Q_gd/Q_g ratio (32 %), enabling fast switching with minimized Miller-induced turn-on risk in hard-switched topologies.

It integrates a robust body diode with t_rr = 437 ns (typ), Q_rr = 8.6 μC (typ), and dV/dt capability up to 50 V/ns - supporting reliable operation in continuous conduction mode (CCM) PFC and synchronous rectification where diode recovery behavior critically impacts EMI and losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V AC input rectified rails with 20 % margin for voltage transients in industrial SMPS
R_DS(on) typ	0.053 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 23.5 A, reducing heatsink requirements
Q_g max	222 nC - determines gate driver current demand; requires ≥10 mA average drive for 100 kHz switching
E_AS	691 mJ - rated unclamped inductive switching energy ensures robustness during load dump or short-circuit events
R_thJC	0.33 °C/W - allows 379 W dissipation with ≤125 °C case-to-junction rise, enabling high-power density layouts
C_iss	4600 pF - sets input impedance and influences gate drive loop stability in high-frequency designs
t_r/t_f	65/71 ns (typ) - defines minimum practical dead-time and switching frequency ceiling in bridge configurations

Pinout & Package

TO-247AC package: isolated tab (drain-connected), through-hole mounting, 3-pin vertical lead frame with 2.54 mm pitch. Thermal path optimized via direct die-to-case copper interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance dominated by C_iss = 4600 pF; requires low-inductance gate loop
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 600 V blocking; primary thermal path
S (Source)	Reference node / return path	Common connection for gate drive return and current sensing; low-inductance source routing critical for dV/dt immunity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.9 nΩ·F - reduces combined conduction + switching losses more effectively than standard 600 V MOSFETs
Avalanche energy rating	691 mJ single-pulse - eliminates need for external snubbers in inductive load switching applications
Body diode Q_rr	8.6 μC (typ) - lowers reverse recovery loss and associated EMI vs. competitors with >15 μC Q_rr
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)
Enhanced dv/dt ruggedness	Rated to 50 V/ns - prevents false turn-on during high-speed switching in noisy power stage environments

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC/DC converters with active PFC and LLC resonant stages. IC Role / Device Role / Timing Role: High-voltage power switch handling 480 V DC bus, operating at 100–200 kHz with zero-voltage switching assistance. Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS initiation margin; R_DS(on) minimizes conduction loss at full load.	Use Scenario: Output rectification and hold-up capacitor charging in -48 V distributed power architecture (DPA) systems. IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary switch in dual-active-bridge (DAB) isolation stages. Use Value: Fast body diode recovery (t_rr = 437 ns) and low Q_rr suppress shoot-through risk and reduce transformer core loss during commutation.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive unclamped inductive stress during fault conditions. Use Value: 691 mJ E_AS rating ensures survival during IGBT-like short-circuit events without desaturation protection circuitry.	Use Scenario: Brake chopper and DC bus pre-charge control in 15–30 kW variable frequency drives (VFDs). IC Role / Device Role / Timing Role: Energy-dissipating switch clamping regenerated motor energy into braking resistors. Use Value: 379 W P_D and 0.33 °C/W R_thJC support sustained 47 A pulsed operation with minimal thermal derating.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC/DC converters with active PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: High-voltage power switch handling 480 V DC bus, operating at 100–200 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS initiation margin; R_DS(on) minimizes conduction loss at full load.

Use Scenario: Output rectification and hold-up capacitor charging in -48 V distributed power architecture (DPA) systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary switch in dual-active-bridge (DAB) isolation stages.

Use Value: Fast body diode recovery (t_rr = 437 ns) and low Q_rr suppress shoot-through risk and reduce transformer core loss during commutation.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive unclamped inductive stress during fault conditions.

Use Value: 691 mJ E_AS rating ensures survival during IGBT-like short-circuit events without desaturation protection circuitry.

Use Scenario: Brake chopper and DC bus pre-charge control in 15–30 kW variable frequency drives (VFDs).

IC Role / Device Role / Timing Role: Energy-dissipating switch clamping regenerated motor energy into braking resistors.

Use Value: 379 W P_D and 0.33 °C/W R_thJC support sustained 47 A pulsed operation with minimal thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.062 Ω (typ), Q_g = 125 nC, E_AS = 520 mJ, TO-247 long leads	Lower avalanche energy and higher R_DS(on) increase conduction loss and reduce fault tolerance in PFC boost stages	Acceptable for lower-power (<2 kW) SMPS where thermal margin is available and transient stress is limited
IXFH48N60P	R_DS(on) = 0.065 Ω (typ), Q_g = 130 nC, E_AS = 620 mJ, TO-247 non-isolated tab	Non-isolated drain tab requires insulating hardware; slightly higher switching losses due to larger Q_g and C_iss	Suitable for cost-sensitive industrial drives where heatsink isolation is already implemented and layout allows extra gate drive margin

Compared with STW48N60M2 and IXFH48N60P, SIHG47N60AEL-GE3 delivers superior figure-of-merit (5.9 vs. ≥7.5 nΩ·F), higher avalanche robustness, and an isolated TO-247AC package - making it preferred for high-reliability telecom/server power and solar inverters demanding minimal layout overhead and maximum ruggedness.

Availability

SIHG47N60AEL-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable green-compliant sourcing.

Supply support for SIHG47N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EL Series Power MOSFETs, including SIHG47N60AEL-GE3, are engineered for high-frequency, high-voltage switching in mission-critical power conversion systems such as datacenter PSUs and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHG47N60AEL-GE3 at 100 °C case temperature?

The SIHG47N60AEL-GE3 has a continuous drain current rating of 30 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. The SIHG47N60AEL-GE3 must be mounted on a heatsink capable of maintaining case temperature ≤100 °C under full-load conditions.

Does SIHG47N60AEL-GE3 support logic-level gate drive?

No, SIHG47N60AEL-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but it is specified for R_DS(on) at V_GS = 10 V, and full performance (including low R_DS(on) and rated current) requires 10 V gate drive. The SIHG47N60AEL-GE3 is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.

What is the typical reverse recovery time (t_rr) of the body diode in SIHG47N60AEL-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHG47N60AEL-GE3 is 437 ns, measured at T_J = 25 °C, I_F = 23.5 A, di/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet. The SIHG47N60AEL-GE3's t_rr supports efficient operation in CCM PFC and synchronous rectification without excessive voltage overshoot.

Is SIHG47N60AEL-GE3 suitable for use in avalanche-mode operation?

Yes, SIHG47N60AEL-GE3 is explicitly rated for single-pulse avalanche energy (E_AS) of 691 mJ, tested under defined conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7.0 A). This rating validates its ruggedness in unclamped inductive switching events. However, repetitive avalanche operation is not guaranteed and should be avoided in production designs unless fully characterized per application-specific stress profiles.

What does the "-GE3" suffix indicate in SIHG47N60AEL-GE3?

The "-GE3" suffix denotes Vishay's standard lead (Pb)-free and halogen-free packaging per RoHS Directive 2011/65/EU and Vishay Green Standard (document 99912). It specifies matte tin-plated leads, compatible with standard SnPb and lead-free soldering processes, and confirms compliance with JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The SIHG47N60AEL-GE3 is not a different electrical variant - all parametric performance matches the base SIHG47N60AEL part.

SIHG47N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 222 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 379W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N60AEL-GE3 FAQ

1.How can I place an order for SIHG47N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N60AEL-GE3 reliable?

The price and inventory of SIHG47N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG47N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG47N60AEL-GE3?

SIHG47N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N60AEL-GE3?

For technical support, including SIHG47N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHG47N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG47N60AEL-GE3?

All SIHG47N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHG47N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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