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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N60E-E3

Name: SIHG47N60E-E3
Brand: Vishay Siliconix
SKU: SIHG47N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N60E-E3.pdf

Description:: MOSFET N-CH 600V 47A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG47N60E-E3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.064 Ω at V_GS = 10 V, Q_g = 220 nC, and avalanche-rated (E_AS = 1800 mJ). It serves as a high-voltage switching device in PFC stages and main switches of solar inverters and industrial motor drives.

For engineers reviewing the SIHG47N60E-E3 datasheet, SIHG47N60E-E3 pinout, SIHG47N60E-E3 application, or SIHG47N60E-E3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for hard-switched topologies, robust body diode recovery (t_rr = 550–1164 ns), and thermal resistance R_thJC = 0.33 °C/W enabling high-power-density designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate structure delivers ultra-low Q_g (220 nC max) and C_iss (9620 pF max), reducing drive loss and enabling operation at elevated switching frequencies up to 100 kHz in continuous conduction mode PFC.

The integrated body diode is rated for repetitive I_S = 47 A and exhibits controlled reverse recovery with Q_rr = 10.7–22 μC and dV/dt immunity up to 70 V/ns, supporting reliable operation in bridge-leg configurations without external snubbers in well-designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PV inverters and industrial SMPS
R_DS(on) max	0.064 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 24 A, critical for thermally constrained PFC boost stages
Q_g max	220 nC - reduces gate driver power requirement and allows use of lower-cost 1-A peak drivers in 50–100 kHz applications
E_AS	1800 mJ - ensures ruggedness against unclamped inductive switching events in motor drive half-bridges
R_thJC	0.33 °C/W - permits >300 W dissipation with standard heatsink, enabling compact 3–5 kW power stage designs
t_rr	550–1164 ns - supports ZVS-assisted soft switching in LLC resonant converters when paired with proper gate timing
I_D cont	47 A @ T_C = 25 °C - defines maximum continuous current under ideal heatsinking, derating linearly to 30 A at 100 °C case temperature

Pinout & Package

SIHG47N60E-E3 uses the TO-247AC package - a through-hole, high-power plastic-outline package with isolated drain tab, optimized for high-voltage isolation and thermal performance. The package features three leads: Gate (pin 1), Drain (pins 2 & 4), and Source (pin 3), with drain connected to the metal tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; requires <220 nC charge to fully enhance; sensitive to ESD (±30 V rating)
2 & 4 (Drain)	Main high-side current path	Electrically tied to metal tab; must be isolated from heatsink unless using insulating pad; carries full load current and withstands 600 V transients
3 (Source)	Reference node / return path	Common reference for gate drive and current sensing; connects to power ground in low-side switch configuration

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	14.1 Ω·nC - balances conduction and switching loss for optimal efficiency in 50–100 kHz PFC and inverter stages
Avalanche energy rating	1800 mJ single-pulse - eliminates need for external clamping in inductive load switching, simplifying layout and BOM
Body diode Q_rr	10.7–22 μC - enables predictable commutation in synchronous rectification and bidirectional topologies
High dV/dt immunity	70 V/ns - suppresses false turn-on during fast voltage transients in high-side configurations without extra gate resistors
Lead (Pb)-free & halogen-free	E3 suffix - complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity

Applications

Industrial Motor Drives	Solar Photovoltaic Inverters
Use Scenario: Three-phase IGBT/MOSFET inverter stage converting DC from MPPT controller to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side and low-side switching element in 600 V DC-link half-bridge modules handling up to 5 kW output. Use Value: 600 V rating accommodates 1000 V PV string voltages with margin; low R_DS(on) minimizes thermal stress during continuous 47 A operation.	Use Scenario: Two-stage grid-tie inverter with boost PFC front-end followed by full-bridge DC–AC conversion. IC Role / Device Role / Timing Role: Primary switching device in interleaved PFC boost converter operating at 65–100 kHz. Use Value: Ultra-low Q_g (220 nC) reduces gate drive losses; avalanche rating protects against line surge-induced inductive kickback.
Welding Power Supplies	Induction Heating Systems
Use Scenario: High-current DC output stage delivering pulsed 100–300 A arcs with rapid duty-cycle modulation. IC Role / Device Role / Timing Role: Main switching transistor in resonant LLC or phase-shifted full-bridge topology regulating arc energy. Use Value: 145 A pulsed current rating (I_DM) supports short-duration high-peak loads; robust body diode handles reverse recovery during zero-voltage transitions.	Use Scenario: Solid-state RF generator driving 20–100 kHz resonant tank circuits for metal heating in manufacturing. IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current flow into induction coil with precise phase control. Use Value: Low C_oss (460 pF max) and controlled dV/dt (70 V/ns) prevent spurious turn-on during high-frequency voltage reversal.

Industrial Motor Drives

Solar Photovoltaic Inverters

Use Scenario: Three-phase IGBT/MOSFET inverter stage converting DC from MPPT controller to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 600 V DC-link half-bridge modules handling up to 5 kW output.

Use Value: 600 V rating accommodates 1000 V PV string voltages with margin; low R_DS(on) minimizes thermal stress during continuous 47 A operation.

Use Scenario: Two-stage grid-tie inverter with boost PFC front-end followed by full-bridge DC–AC conversion.

IC Role / Device Role / Timing Role: Primary switching device in interleaved PFC boost converter operating at 65–100 kHz.

Use Value: Ultra-low Q_g (220 nC) reduces gate drive losses; avalanche rating protects against line surge-induced inductive kickback.

Welding Power Supplies

Induction Heating Systems

Use Scenario: High-current DC output stage delivering pulsed 100–300 A arcs with rapid duty-cycle modulation.

IC Role / Device Role / Timing Role: Main switching transistor in resonant LLC or phase-shifted full-bridge topology regulating arc energy.

Use Value: 145 A pulsed current rating (I_DM) supports short-duration high-peak loads; robust body diode handles reverse recovery during zero-voltage transitions.

Use Scenario: Solid-state RF generator driving 20–100 kHz resonant tank circuits for metal heating in manufacturing.

IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current flow into induction coil with precise phase control.

Use Value: Low C_oss (460 pF max) and controlled dV/dt (70 V/ns) prevent spurious turn-on during high-frequency voltage reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 140 nC, D²PAK package	Lower Q_g but higher thermal resistance (R_thJC = 0.55 °C/W); not TO-247AC-compatible	Preferred where gate drive efficiency dominates over thermal density; requires PCB layout change due to different footprint.
IXFH48N60P	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 200 nC, TO-247AD package with isolated tab	Same pinout but electrically isolated drain tab; slightly lower Q_g; no avalanche rating specified	Selected when galvanic isolation between drain and heatsink is mandatory; lacks documented UIS ruggedness for unclamped inductive loads.

Compared with STW48N60M2 and IXFH48N60P, SIHG47N60E-E3 offers superior thermal performance (R_thJC = 0.33 °C/W) and guaranteed avalanche capability-critical for industrial reliability-while maintaining competitive conduction and switching trade-offs in TO-247AC form factor.

Availability

SIHG47N60E-E3 is available at Aetrix Electronics and suitable for industrial motor drives, solar photovoltaic inverters, and welding power supplies requiring stable component supply across multi-year production cycles.

Supply support for SIHG47N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage power conversion systems-including PFC, solar inverters, and industrial motor controls-where low R_DS(on) × Q_g and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHG47N60E-E3 at 100 °C case temperature?

The SIHG47N60E-E3 has a maximum continuous drain current (I_D) of 30 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects linear derating from 47 A at 25 °C using the specified 3 W/°C thermal derating factor. Designers must ensure heatsink design maintains case temperature ≤100 °C under worst-case load and ambient conditions to sustain this current continuously.

Does SIHG47N60E-E3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHG47N60E-E3 is rated for single-pulse avalanche energy (E_AS) of 1800 mJ, tested under standardized unclamped inductive switching (UIS) conditions: V_DD = 50 V, starting T_J = 25 °C, L = 73.5 mH, R_g = 25 Ω, and I_AS = 7 A. This rating confirms ruggedness against transient overvoltage events in inductive circuits without external protection components.

What is the typical body diode reverse recovery time (t_rr) for SIHG47N60E-E3, and how does it vary with test conditions?

The SIHG47N60E-E3 body diode t_rr is specified as 550–1164 ns depending on test voltage: 550 ns (min) to 1164 ns (max) at V_R = 400 V, and 582–1164 ns at V_R = 25 V, both measured at T_J = 25 °C, I_F = I_S = 24 A, and dI/dt = 100 A/μs. This variation reflects voltage-dependent carrier lifetime effects in the intrinsic diode structure.

Can SIHG47N60E-E3 be used in a high-side switch configuration, and what design considerations apply?

Yes, SIHG47N60E-E3 supports high-side switching, but requires level-shifted gate drive referenced to the source terminal. Critical considerations include its 70 V/ns dV/dt immunity (prevents false turn-on), need for low-inductance gate loop layout, and verification that V_GS remains within ±30 V during fast drain voltage transitions. A dedicated isolated gate driver with sufficient peak current (>2 A) is recommended.

What is the gate-source threshold voltage (V_GS(th)) range for SIHG47N60E-E3, and why does it matter for drive circuit design?

The SIHG47N60E-E3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This wide spread means gate drive must exceed 4 V reliably to ensure full enhancement across process and temperature extremes. Designers should target ≥10 V gate drive to achieve the specified R_DS(on) of 0.064 Ω and avoid operating in the linear region where power dissipation spikes.

SIHG47N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 9620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N60E-E3 FAQ

1.How can I place an order for SIHG47N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N60E-E3 reliable?

The price and inventory of SIHG47N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG47N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG47N60E-E3?

SIHG47N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N60E-E3?

For technical support, including SIHG47N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60E-E3 requirements.

6.How does Aetrix verify that SIHG47N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG47N60E-E3?

All SIHG47N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N60E-E3 part is unused and in its original packaging.

Return procedure for SIHG47N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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