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Vishay Siliconix SIHG47N60EF-GE3
- Part No.:
- SIHG47N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG47N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 47A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:463
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Product details
Overview
SIHG47N60EF-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (Qg = 152–228 nC), fast body diode (trr = 199–398 ns), and avalanche-rated ruggedness (EAS = 1500 mJ). It delivers low RDS(on) of 0.056 Ω (typ.) at VGS = 10 V and is optimized for high-efficiency LLC resonant and phase-shifted bridge topologies in telecom and solar inverters.
For engineers reviewing the SIHG47N60EF-GE3 datasheet, SIHG47N60EF-GE3 pinout, SIHG47N60EF-GE3 application, or SIHG47N60EF-GE3 equivalent, this page provides verified electrical parameters, thermal performance data, body diode recovery behavior, and validated alternatives for ZVS SMPS design, PV inverter half-bridge stages, and high-intensity lighting drivers.
Technical Context
This device employs Vishay's EF-series silicon technology to minimize reverse recovery charge (Qrr = 1.4–2.8 μC) and reduce switching losses in hard- and soft-switching converters. Its low Ciss (5000 pF typ.) and Co(er) (172 pF) support high-frequency operation up to 300 kHz while maintaining stable gate drive control under dV/dt stress up to 70 V/ns (TJ = 125 °C).
The integrated fast-recovery body diode enables reliable synchronous rectification and freewheeling in bidirectional topologies without external diodes. Thermal resistance RthJC = 0.33 °C/W ensures efficient heat transfer to heatsinks in high-power industrial applications such as welding inverters and battery chargers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports DC bus voltages up to 480 V in 3-level inverters with 25 % safety margin |
| RDS(on) max | 0.065 Ω at VGS = 10 V, TJ = 25 °C - Enables <1.5 W conduction loss at 24 A continuous current |
| Qg max | 228 nC - Reduces gate driver power demand and enables use of lower-cost 1-A peak drivers |
| trr max | 398 ns - Limits diode reverse recovery energy loss and EMI generation in ZVS circuits |
| EAS | 1500 mJ - Withstands unclamped inductive switching events without failure in motor drives |
| RthJC | 0.33 °C/W - Allows 379 W power dissipation with ≤125 °C junction rise above 25 °C case temperature |
| Body diode VSD | 0.9–1.2 V at IS = 24 A, TJ = 25 °C - Low forward drop reduces freewheeling loss in buck-derived topologies |
Pinout & Package
SIHG47N60EF-GE3 uses the industry-standard TO-247AC package with isolated drain tab and 3-pin configuration. The plastic body features a thermal pad (D1/E1 optional) and conforms to JEDEC outline TO-247 with facility-code-specific dimensional tolerances (versions 1–3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; low Qg (152–228 nC) minimizes Miller effect and enables fast turn-on/turn-off |
| 2 (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically isolated metal tab supports direct heatsink mounting |
| 3 (Source) | Power return and reference node | Serves as local ground for gate drive; low-inductance layout critical to suppress VGS ringing during dI/dt > 500 A/μs |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 199–398 ns and Qrr = 1.4–2.8 μC enable clean zero-voltage switching in LLC and PSFB converters |
| Low FOM (RDS(on) × Qg) | Typ. 8.5 Ω·nC - Balances conduction and switching loss for optimal efficiency at 100–300 kHz |
| Avalanche energy rating | EAS = 1500 mJ - Eliminates need for external snubbers in inductive load switching applications |
| Low Ciss | 5000 pF typ. - Reduces gate drive current requirement and improves noise immunity in high-dV/dt environments |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C - Prevents false turn-on in high-speed bridge configurations with fast bus transients |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
|
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with ZVS operation at 100–200 kHz. Use Value: Fast trr and low Qrr minimize dead-time loss and improve light-load efficiency by >1.2 % vs. standard MOSFETs. |
Use Scenario: Half-bridge leg in string-level 5 kW solar inverter operating with unipolar PWM modulation. IC Role / Device Role / Timing Role: Power switch managing bidirectional current flow and body-diode commutation during dead time. Use Value: Avalanche rating and robust UIS performance ensure reliability during grid fault conditions and MPPT transients. |
| HID Lighting Ballast | Industrial Welding Inverter |
|
Use Scenario: Resonant switch in electronic ballast driving 400 W metal halide lamp with frequency sweep control. IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank, conducting high di/dt currents during ignition. Use Value: Low RDS(on) and high ID (47 A) sustain 150 A pulsed current during lamp strike without thermal runaway. |
Use Scenario: Output stage switch in IGBT-assisted inverter welder delivering 300 A DC output with 20 kHz carrier. IC Role / Device Role / Timing Role: High-frequency auxiliary switch enabling soft-switching of main IGBTs in hybrid topology. Use Value: 0.33 °C/W RthJC allows direct heatsink mounting and maintains TJ < 130 °C under 100 % duty cycle at 25 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | Higher RDS(on) (0.07 Ω), higher Qg (240 nC), no specified trr or Qrr | Limited suitability for ZVS due to slower body diode; better for hard-switched PFC stages | Prefer SIHG47N60EF-GE3 where fast body diode recovery is required in resonant topologies |
| IXFH48N60P | Higher VDS rating (650 V), higher RDS(on) (0.075 Ω), Qrr not characterized | Stronger avalanche rating (EAS = 2200 mJ); used in high-reliability industrial motor drives | Choose SIHG47N60EF-GE3 when optimizing for combined low Qg and low Qrr in high-frequency SMPS |
Compared with STW48N60M2 and IXFH48N60P, SIHG47N60EF-GE3 offers the lowest Qrr–RDS(on) trade-off among 600 V 47 A MOSFETs, making it uniquely suited for LLC and PSFB designs where diode recovery loss dominates total system loss at light-to-mid loads.
Availability
SIHG47N60EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.
Supply support for SIHG47N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The EF Series, including SIHG47N60EF-GE3, was developed specifically for high-frequency, high-efficiency switching power supplies in telecom, renewable energy, and industrial systems where fast body diode performance is critical.
FAQ
What is the maximum continuous drain current for SIHG47N60EF-GE3 at 100 °C case temperature?
The maximum continuous drain current for SIHG47N60EF-GE3 is 29 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within its 379 W power dissipation capability when properly heatsinked. SIHG47N60EF-GE3 maintains stable RDS(on) performance across this range due to its positive VGS(th) temperature coefficient.
Does SIHG47N60EF-GE3 have a fully characterized body diode for synchronous rectification?
Yes, SIHG47N60EF-GE3 includes full characterization of its integral body diode, including trr (199–398 ns), Qrr (1.4–2.8 μC), IRRM (13.2 A), and VSD (0.9–1.2 V). These parameters are measured under standardized conditions (TJ = 25 °C, IF = 24 A, dI/dt = 100 A/μs, VR = 400 V) and confirm suitability for controlled freewheeling and synchronous rectification in bridge topologies. SIHG47N60EF-GE3 is explicitly designed as an EF-series fast-body-diode MOSFET.
Is SIHG47N60EF-GE3 suitable for use in phase-shifted full-bridge (PSFB) converters?
Yes, SIHG47N60EF-GE3 is validated for PSFB operation due to its low Qrr, fast trr, and high dV/dt immunity (70 V/ns at TJ = 125 °C). Its 600 V rating supports 400 V DC bus designs with margin, and its 228 nC Qg max enables reliable ZVS transition with typical gate drivers. SIHG47N60EF-GE3 is listed in Vishay's application notes for PSFB telecom and server power supplies.
What is the thermal resistance from junction to case (RthJC) for SIHG47N60EF-GE3?
The maximum junction-to-case (drain) thermal resistance RthJC for SIHG47N60EF-GE3 is 0.33 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to heat flow from the silicon die through the drain metallization to the TO-247AC package's isolated metal tab. SIHG47N60EF-GE3 achieves this low RthJC via optimized internal bond wire and die attach design, enabling high-power density layouts.
How does the gate charge profile of SIHG47N60EF-GE3 impact gate driver selection?
SIHG47N60EF-GE3 has a total gate charge Qg of 152–228 nC (typ./max) with Qgs = 32 nC and Qgd = 62 nC, indicating moderate Miller plateau duration. This requires a gate driver capable of ≥2 A peak sink/source current to achieve <100 ns turn-on/turn-off times at 10 V drive. SIHG47N60EF-GE3 benefits from low-impedance PCB routing and localized 100 nF decoupling near the source pin to maintain stable VGS during high dI/dt switching.
SIHG47N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 225 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4854 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 379W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG47N60EF-GE3 FAQ
1.How can I place an order for SIHG47N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG47N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG47N60EF-GE3 reliable?
The price and inventory of SIHG47N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG47N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG47N60EF-GE3?
SIHG47N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG47N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG47N60EF-GE3?
For technical support, including SIHG47N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG47N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG47N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG47N60EF-GE3?
All SIHG47N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG47N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG47N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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