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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N60E-GE3

Name: SIHG47N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG47N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N60E-GE3.pdf

Description:: MOSFET N-CH 600V 47A TO247AC

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Product details

Overview

SIHG47N60E-GE3 from Vishay Siliconix is a 600 V, 47 A N-channel enhancement-mode Power MOSFET in TO-247AC package, optimized for high-voltage switching in SMPS and PFC stages with R_DS(on) = 0.064 Ω at V_GS = 10 V, Q_g = 220 nC, and avalanche-rated (E_AS = 1800 mJ). It delivers low conduction and switching losses in industrial motor drives and solar inverters.

For engineers reviewing the SIHG47N60E-GE3 datasheet, SIHG47N60E-GE3 pinout, SIHG47N60E-GE3 application, or SIHG47N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 47 A continuous drain current at T_C = 25 °C, ultra-low gate charge, body diode recovery performance (t_rr = 550–1164 ns), and TO-247AC thermal resistance (R_thJC = 0.33 °C/W).

Technical Context

This device employs planar vertical DMOS technology with optimized cell layout to achieve low figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The integrated body diode features soft reverse recovery (Q_rr = 10.7–22 μC, t_rr = 550–1164 ns at V_R = 400 V), critical for reducing EMI and voltage overshoot in hard-switched topologies. Thermal design is supported by low junction-to-case resistance (0.33 °C/W) and rated for operation from –55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
I_D continuous @ T_C = 25 °C	47 A - enables high-power output without forced air cooling in compact heatsink layouts
R_DS(on) max @ V_GS = 10 V	0.064 Ω - limits conduction loss to ≤143 W at 47 A, critical for efficiency in PFC boost stages
Q_g max	220 nC - reduces gate driver power demand and switching transition time in 50–100 kHz SMPS
E_AS single-pulse	1800 mJ - withstands unclamped inductive energy during fault conditions without failure
t_rr (body diode)	550–1164 ns - minimizes reverse recovery stress and dv/dt-induced shoot-through risk
R_thJC	0.33 °C/W - allows direct mounting to heatsink with predictable thermal drop under full load

Pinout & Package

SIHG47N60E-GE3 uses the TO-247AC package: a 3-lead through-hole power package with isolated tab (drain-connected), optimized for high-voltage isolation and thermal dissipation. Dimensions conform to JEDEC TO-247 outline with thermal pad contour optional (D1/E1 variants); lead finish is Pb-free and halogen-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <220 nC total charge; sensitive to ESD; must be driven with low-impedance path to minimize ringing
2 (Drain)	Main power output / high-side switch node	Connected to internal die backside; electrically tied to metal tab; requires creepage/clearance ≥8 mm for 600 V systems
3 (Source)	Power return / reference node	Low-inductance source connection essential for stable gate drive; forms common return for gate driver and load current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	14.1 Ω·nC - balances conduction and switching loss for optimal efficiency in 50–100 kHz PFC converters
Avalanche energy rating	1800 mJ - eliminates need for external snubbers in inductive load switching and fault-tolerant designs
Soft-recovery body diode	Q_rr = 10.7–22 μC, t_rr = 550–1164 ns - suppresses voltage spikes and reduces EMI in bridge-leg and synchronous rectifier configurations
Ultra-low C_iss	2405–9620 pF - improves high-frequency gate drive stability and reduces Miller-induced turn-on risk
High dV/dt immunity	70 V/ns - maintains reliable blocking during fast transients in motor drive and inverter applications

Applications

Solar PV Inverters	Industrial Motor Drives
Use Scenario: High-efficiency DC–AC conversion in string inverters using two-level or three-level NPC topologies. IC Role / Device Role / Timing Role: Main switching device in DC-link and inverter legs handling 400–1000 V DC input and 50/60 Hz AC output. Use Value: 600 V rating and 1800 mJ avalanche capability ensure robustness against grid surges and DC-link transients.	Use Scenario: Variable-frequency drive (VFD) output stage controlling 3-phase induction motors up to 15 kW. IC Role / Device Role / Timing Role: High-side and low-side switch in IGBT-like half-bridge modules or discrete H-bridge configurations. Use Value: Soft-recovery body diode (t_rr ≤ 1164 ns) prevents cross-conduction and reduces snubber losses during PWM commutation.
Server PSU PFC Stages	Welding Power Supplies
Use Scenario: Active boost PFC front-end in 3–5 kW telecom and datacenter power supplies operating at 65–100 kHz. IC Role / Device Role / Timing Role: Boost switch managing continuous conduction mode (CCM) with 380–400 V DC output. Use Value: 0.064 Ω R_DS(on) and 220 nC Q_g enable >98 % efficiency while maintaining thermal headroom on standard heatsinks.	Use Scenario: Primary-side switching in IGBT-replacement inverter welders requiring fast, rugged 600 V switches. IC Role / Device Role / Timing Role: High-current, high-dV/dt switch in resonant or hard-switched inverter stages delivering 100–500 A output. Use Value: 70 V/ns dV/dt rating and 145 A pulsed current support enable reliable arc initiation and stable droop control.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: High-efficiency DC–AC conversion in string inverters using two-level or three-level NPC topologies.

IC Role / Device Role / Timing Role: Main switching device in DC-link and inverter legs handling 400–1000 V DC input and 50/60 Hz AC output.

Use Value: 600 V rating and 1800 mJ avalanche capability ensure robustness against grid surges and DC-link transients.

Use Scenario: Variable-frequency drive (VFD) output stage controlling 3-phase induction motors up to 15 kW.

IC Role / Device Role / Timing Role: High-side and low-side switch in IGBT-like half-bridge modules or discrete H-bridge configurations.

Use Value: Soft-recovery body diode (t_rr ≤ 1164 ns) prevents cross-conduction and reduces snubber losses during PWM commutation.

Server PSU PFC Stages

Welding Power Supplies

Use Scenario: Active boost PFC front-end in 3–5 kW telecom and datacenter power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Boost switch managing continuous conduction mode (CCM) with 380–400 V DC output.

Use Value: 0.064 Ω R_DS(on) and 220 nC Q_g enable >98 % efficiency while maintaining thermal headroom on standard heatsinks.

Use Scenario: Primary-side switching in IGBT-replacement inverter welders requiring fast, rugged 600 V switches.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switch in resonant or hard-switched inverter stages delivering 100–500 A output.

Use Value: 70 V/ns dV/dt rating and 145 A pulsed current support enable reliable arc initiation and stable droop control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 160 nC, D²PAK package	Lower gate charge but higher thermal resistance (R_thJC = 0.55 °C/W); no avalanche rating specified	Prefer when gate drive power is constrained and board space permits larger footprint; avoid in unclamped inductive loads
IXFH48N60P	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 210 nC, TO-247 package, avalanche rated (E_AS = 1500 mJ)	Slightly lower E_AS and higher C_iss (5200 pF typ); same pinout and thermal interface	Drop-in alternative where identical mechanical fit and reliability under repetitive avalanche are required

Compared with STW48N60M2, SIHG47N60E-GE3 offers superior avalanche ruggedness and lower thermal resistance, making it more suitable for high-reliability industrial inverters; versus IXFH48N60P, it provides higher E_AS and lower Q_g, improving both fault tolerance and switching efficiency in high-frequency PFC.

Availability

SIHG47N60E-GE3 is available at Aetrix Electronics and suitable for solar PV inverters, industrial motor drives, and server PSU PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SIHG47N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFETs, including SIHG47N60E-GE3, were designed for high-voltage, high-current switching in industrial power conversion-targeting SMPS, PFC, motor drives, and renewable energy systems where low R_DS(on) × Q_g and avalanche capability are critical.

FAQ

What is the maximum continuous drain current rating for SIHG47N60E-GE3 at 100 °C case temperature?

The SIHG47N60E-GE3 has a continuous drain current rating of 30 A at T_C = 100 °C, derated linearly from 47 A at 25 °C using a 3 W/°C derating factor. This reflects real-world thermal constraints in enclosed power enclosures without forced airflow, and must be validated against actual PCB copper area and heatsink performance in the final design.

Does SIHG47N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG47N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS = 1800 mJ), tested per JEDEC JESD24-11 with V_DD = 50 V, L = 73.5 mH, R_g = 25 Ω, and I_AS = 7 A. This rating applies to non-repetitive fault events only; repetitive avalanche is not guaranteed and requires system-level protection design.

What is the gate threshold voltage range for SIHG47N60E-GE3, and why does it matter for drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHG47N60E-GE3 is specified from 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on from dv/dt coupling-critical in high-density power boards where gate traces run near switching nodes.

Can SIHG47N60E-GE3 be used in place of a logic-level MOSFET in 5 V gate drive applications?

No-SIHG47N60E-GE3 is not a logic-level device. Its V_GS(th) minimum is 2 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) ≤ 0.064 Ω. At 5 V gate drive, R_DS(on) increases significantly (>0.2 Ω), causing excessive conduction loss; a dedicated logic-level MOSFET or gate driver boosting to 10–15 V is required.

What is the body diode's reverse recovery charge (Q_rr) for SIHG47N60E-GE3, and how does it impact bridge-leg operation?

The body diode Q_rr for SIHG47N60E-GE3 is 10.7–22 μC depending on test conditions (V_R = 25–400 V, dI/dt = 100 A/μs). In bridge-leg topologies, this value directly determines commutation loss and voltage overshoot during freewheeling transitions; lower Q_rr reduces EMI and enables higher switching frequencies without added snubbers.

SIHG47N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 9620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N60E-GE3 FAQ

1.How can I place an order for SIHG47N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N60E-GE3 reliable?

The price and inventory of SIHG47N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG47N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG47N60E-GE3?

SIHG47N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N60E-GE3?

For technical support, including SIHG47N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60E-GE3 requirements.

6.How does Aetrix verify that SIHG47N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG47N60E-GE3?

All SIHG47N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG47N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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