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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N65E-GE3

Name: SIHG47N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG47N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N65E-GE3.pdf

Description:: MOSFET N-CH 650V 47A TO247AC

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Product details

Overview

SIHG47N65E-GE3 from Vishay Siliconix is a 650 V, 47 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.072 Ω at V_GS = 10 V, Q_g = 273 nC, and avalanche-rated (E_AS = 1410 mJ). It delivers low conduction and switching losses for high-efficiency server power supplies and solar PV inverters.

For engineers reviewing the SIHG47N65E-GE3 datasheet, SIHG47N65E-GE3 pinout, SIHG47N65E-GE3 application, or SIHG47N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, 47 A continuous drain rating at T_C = 25 °C, ultra-low gate charge, and robust unclamped inductive switching capability.

Technical Context

This E-Series MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching topologies. Its low C_iss (5682 pF) and C_oss (251 pF) reduce capacitive losses, while the 0.3 °C/W R_thJC enables high-power thermal management in compact heatsink designs.

The device integrates an intrinsic body diode with t_rr = 753–1506 ns and Q_rr = 14–28 μC, supporting ZVS-capable PFC stages. Its dV/dt immunity of 37 V/ns at T_J = 125 °C ensures reliable operation in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 650 V in single-stage PFC and 3-phase inverters.
R_DS(on) max	0.072 Ω @ V_GS = 10 V - Enables <1.7 W conduction loss at 47 A, critical for >96% efficiency targets.
Q_g max	273 nC - Reduces gate drive power and allows use of lower-cost drivers in high-frequency SMPS.
E_AS	1410 mJ - Rated for repetitive unclamped inductive switching, eliminating need for external snubbers in motor drives.
I_D continuous	47 A @ T_C = 25 °C - Supports high-current output stages without parallel devices in telecom rectifiers.
R_thJC	0.3 °C/W - Allows direct mounting to heatsinks with minimal thermal interface resistance for high-power density designs.
C_iss	5682 pF @ V_DS = 100 V - Low input capacitance improves switching speed and reduces Miller-induced turn-on risk.

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and lead (Pb)-free/halogen-free finish per JEDEC outline. Thermal pad optional; maximum soldering peak temperature 300 °C for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires <273 nC charge for full enhancement; sensitive to ESD.
2 (Drain)	High-side power terminal	Connected to HV DC bus; electrically tied to metal tab-must be insulated from heatsink unless floating.
3 (Source)	Power return and reference node	Serves as gate drive return path and current sense point; low-inductance layout essential for stable switching.
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	19.7 Ω·nC - Balances conduction and switching loss for optimal efficiency across 50–200 kHz PFC operating range.
Avalanche energy rating	1410 mJ - Eliminates need for external clamping circuits in welder and induction heater primary switches.
Body diode Q_rr	14–28 μC - Enables soft-recovery in boost PFC, reducing EMI and diode stress during zero-crossing transitions.
High dV/dt immunity	37 V/ns @ T_J = 125 °C - Prevents false turn-on in high-noise motor drive half-bridges and solar string inverters.
Low C_oss	251 pF - Minimizes turn-off energy loss and improves light-load efficiency in resonant LLC converters.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 100 kHz with synchronous rectification. Use Value: 0.072 Ω R_DS(on) and 273 nC Q_g enable >95.2% full-load efficiency while maintaining thermal margin at 60 °C ambient.	Use Scenario: DC-link switch in 10 kW string inverter H-bridge stage interfacing with 1000 V PV array. IC Role / Device Role / Timing Role: Unidirectional high-side switch in two-level inverter leg, rated for 650 V blocking and 47 A RMS current. Use Value: 1410 mJ E_AS withstands grid fault transients; 37 V/ns dV/dt rating prevents shoot-through during fast grid reconnection events.
Industrial Motor Drive	Telecom Rectifier
Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM output stage with integrated freewheeling diode. Use Value: Body diode t_rr = 753 ns and Q_rr = 14 μC minimize commutation loss and voltage overshoot during regenerative braking.	Use Scenario: Primary switch in 2.5 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-efficiency 650 V switch operating at 200 kHz with zero-voltage switching assist. Use Value: Low C_iss (5682 pF) and C_oss (251 pF) reduce dead-time losses and improve ZVS window stability under wide load range.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 100 kHz with synchronous rectification.

Use Value: 0.072 Ω R_DS(on) and 273 nC Q_g enable >95.2% full-load efficiency while maintaining thermal margin at 60 °C ambient.

Use Scenario: DC-link switch in 10 kW string inverter H-bridge stage interfacing with 1000 V PV array.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in two-level inverter leg, rated for 650 V blocking and 47 A RMS current.

Use Value: 1410 mJ E_AS withstands grid fault transients; 37 V/ns dV/dt rating prevents shoot-through during fast grid reconnection events.

Industrial Motor Drive

Telecom Rectifier

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM output stage with integrated freewheeling diode.

Use Value: Body diode t_rr = 753 ns and Q_rr = 14 μC minimize commutation loss and voltage overshoot during regenerative braking.

Use Scenario: Primary switch in 2.5 kW telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-efficiency 650 V switch operating at 200 kHz with zero-voltage switching assist.

Use Value: Low C_iss (5682 pF) and C_oss (251 pF) reduce dead-time losses and improve ZVS window stability under wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	650 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 120 nC, D²PAK package	Lower gate charge but higher thermal resistance (R_thJC = 0.45 °C/W); not TO-247AC-compatible	Preferred where gate drive power is constrained and PCB space permits larger footprint; requires layout revision.
IXFH48N65X3	650 V, 48 A, R_DS(on) = 0.062 Ω, Q_g = 115 nC, HiPerFET™ Gen. 3, TO-247AC	Superior switching speed (t_f = 60 ns vs. 103–206 ns), no UIS rating	Optimal for high-frequency resonant converters where avalanche ruggedness is secondary to speed; same footprint.

Compared with STW48N65M5 and IXFH48N65X3, SIHG47N65E-GE3 offers superior avalanche ruggedness (1410 mJ) and thermal performance (0.3 °C/W) at the cost of higher Q_g, making it ideal for industrial and solar applications demanding reliability over raw speed.

Availability

SIHG47N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHG47N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHG47N65E-GE3 belongs to Vishay's E-Series Power MOSFET family, engineered for high-voltage hard-switching and resonant topologies in energy-efficient power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG47N65E-GE3 at 100 °C case temperature?

The SIHG47N65E-GE3 supports 30 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the TO-247AC package's junction-to-case thermal resistance of 0.3 °C/W and safe operating area constraints.

Does SIHG47N65E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHG47N65E-GE3 is fully rated for repetitive unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 1410 mJ, measured under standardized conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 10 A).

What is the typical reverse recovery time (t_rr) of the body diode in SIHG47N65E-GE3?

The body diode of SIHG47N65E-GE3 has a typical reverse recovery time (t_rr) of 753 ns at T_J = 25 °C, I_F = 24 A, dI/dt = 100 A/μs, and V_R = 25 V. The maximum specified value is 1506 ns, supporting soft-recovery behavior in PFC and inverter applications.

Is SIHG47N65E-GE3 compatible with standard TO-247AC heatsink mounting hardware?

Yes, SIHG47N65E-GE3 uses the JEDEC-standard TO-247AC outline with a metal drain tab designed for direct heatsink mounting. Mechanical drawings confirm compatibility with standard M3 screws and thermal interface materials, though electrical isolation is required unless the circuit design permits a common-drain configuration.

What gate-source voltage range is safe for continuous operation of SIHG47N65E-GE3?

The SIHG47N65E-GE3 supports continuous gate-source voltage operation between ±30 V, as defined in its Absolute Maximum Ratings. For reliable enhancement, V_GS must exceed the threshold range of 2–4 V, with 10 V recommended for full R_DS(on) specification compliance.

SIHG47N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 72mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 273 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 5682 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 417W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N65E-GE3 FAQ

1.How can I place an order for SIHG47N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N65E-GE3 reliable?

The price and inventory of SIHG47N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG47N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG47N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG47N65E-GE3?

SIHG47N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N65E-GE3?

For technical support, including SIHG47N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N65E-GE3 requirements.

6.How does Aetrix verify that SIHG47N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG47N65E-GE3?

All SIHG47N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG47N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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