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Vishay Siliconix SIHG61N65EF-GE3
- Part No.:
- SIHG61N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG61N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 64A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,304
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Product details
Overview
SIHG61N65EF-GE3 from Vishay Siliconix is a 650 V, 64 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (247 nC typ.), fast body diode (trr = 212 ns typ.), and low RDS(on) of 0.041 Ω at VGS = 10 V - optimized for high-efficiency LLC resonant and phase-shifted bridge converters in telecom and solar inverters.
For engineers reviewing the SIHG61N65EF-GE3 datasheet, SIHG61N65EF-GE3 pinout, SIHG61N65EF-GE3 application, or SIHG61N65EF-GE3 equivalent, key selection criteria include its 1142 mJ avalanche energy rating, 7407 pF input capacitance, 0.24 °C/W junction-to-case thermal resistance, and compatibility with zero-voltage switching topologies requiring low Qrr and controlled dV/dt.
Technical Context
This MOSFET employs Vishay's E Series fast-body-diode technology to reduce reverse recovery charge (Qrr = 2.1 μC typ.) and peak reverse recovery current (IRRM = 18 A), enabling robust operation in hard- and soft-switching circuits. Its low Ciss/Coss ratio and 93 pF Qgd support precise gate drive control under high dV/dt conditions up to 70 V/ns.
The device integrates an avalanche-rated intrinsic body diode with 50 V/ns reverse diode dV/dt capability and operates across -55 °C to +150 °C junction temperature range. Thermal design is enabled by its 0.24 °C/W RthJC and 520 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus designs with 1.6× safety margin for PV inverter and telecom rectifier applications |
| RDS(on) typ. | 0.041 Ω at VGS = 10 V - enables <1.3 W conduction loss at 64 A ID, critical for high-current SMPS output stages |
| Qg typ. | 247 nC - reduces gate drive power and allows use with lower-power drivers in high-frequency LLC converters |
| trr typ. | 212 ns - minimizes diode recovery losses and EMI in phase-shifted full-bridge topologies |
| EAS | 1142 mJ - provides single-pulse avalanche ruggedness for unclamped inductive switching in welder and charger designs |
| RthJC | 0.24 °C/W - enables direct heatsink mounting with predictable thermal path for industrial 500 W–1 kW power stages |
| Ciss | 7407 pF - defines Miller effect and gate drive loop stability requirements at 100 kHz–1 MHz switching frequencies |
Pinout & Package
TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard mechanical footprint per JEDEC outline. Thermal pad optional; lead finish Pb-free and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 10 V logic-level drive; 1 Ω typical gate input resistance ensures stable Miller plateau timing |
| 2 (Drain) | High-side power terminal | Connected to heatsink via isolated metal tab; carries full load current and withstands 650 V blocking |
| 3 (Source) | Power return and reference node | Serves as common reference for gate drive and current sensing; low-inductance layout required for fast switching |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 212 ns typ., Qrr = 2.1 μC - reduces switching loss and voltage overshoot during ZVS transitions |
| Low Qg × RDS(on) FOM | 247 nC × 0.041 Ω = 10.1 - benchmark figure-of-merit for high-frequency power stage efficiency |
| Avalanche rated | EAS = 1142 mJ - eliminates need for external snubbers in inductive load switching |
| Ultra-low Crss | 3 pF - minimizes Miller feedback, improving noise immunity and gate drive robustness |
| High dV/dt immunity | 70 V/ns - sustains reliable operation in high-slew-rate LLC and 3-level inverter nodes |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW server PSU using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 100–200 kHz with ZVS turn-on and controlled body diode commutation. Use Value: Low Qrr and fast trr reduce dead-time losses and improve efficiency above 96% at full load. | Use Scenario: DC-link switching stage in string inverter handling 600–1000 V DC input. IC Role / Device Role / Timing Role: 650 V-class switching element in three-level NPC or T-type inverter leg. Use Value: 650 V rating with 1142 mJ EAS ensures reliability during grid fault transients and DC overvoltage events. |
| LED Driver | Industrial Battery Charger |
Use Scenario: Primary switch in 500 W constant-current LED driver using asymmetric half-bridge. IC Role / Device Role / Timing Role: Hard-switched high-side switch managing 400 V bus with PWM dimming at 1–10 kHz. Use Value: Low RDS(on) and 0.24 °C/W RthJC enable compact heatsink design without forced air cooling. | Use Scenario: Output stage switch in 2 kW lithium-ion battery charger with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacement with integrated fast body diode for bidirectional energy transfer. Use Value: VSD = 0.9 V typ. and IS = 64 A rating support high-efficiency regenerative charging without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N65M5 | 650 V, 62 A, RDS(on) = 0.042 Ω, Qg = 125 nC - lower gate charge but higher RDS(on) and no specified EAS rating | Better suited for high-frequency flyback where Qg dominates; less rugged in unclamped inductive loads | Select when gate drive power budget is tighter than conduction loss target; verify avalanche margin separately |
| IXFH60N65X2 | 650 V, 60 A, RDS(on) = 0.045 Ω, Qrr = 1.8 μC - enhanced HiPerFET with lower trr but higher Ciss (8300 pF) | Preferred in high-dI/dt ZVS circuits needing faster diode recovery; requires stronger gate driver due to higher Ciss | Choose for ultra-fast recovery-critical phase-shifted bridges; confirm gate driver can source 3.5 A peak |
Compared with STW62N65M5 and IXFH60N65X2, SIHG61N65EF-GE3 delivers superior avalanche ruggedness and balanced Qg/RDS(on) trade-off, making it optimal for industrial SMPS where reliability under transient stress and thermal stability are prioritized over minimal gate drive loss.
Availability
SIHG61N65EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term production continuity.
Supply support for SIHG61N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.
The E Series power MOSFET product line was developed specifically for high-efficiency resonant and soft-switching power conversion, emphasizing fast body diode performance, low switching losses, and rugged avalanche capability in 600–650 V applications.
FAQ
What is the maximum continuous drain current rating for SIHG61N65EF-GE3 at 100 °C case temperature?
The SIHG61N65EF-GE3 has a continuous drain current rating of 41 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. The 64 A rating applies only at TC = 25 °C and must be reduced linearly using the 4.2 W/°C derating factor above that temperature.
Does SIHG61N65EF-GE3 support gate drive voltages below 10 V?
Yes, SIHG61N65EF-GE3 is fully characterized down to VGS = 5 V, with a gate threshold voltage range of 2.0–4.0 V. However, RDS(on) increases significantly below 10 V - e.g., at VGS = 8 V, RDS(on) rises to ~0.052 Ω - so 10 V is recommended for minimum conduction loss. Logic-level compatibility is not guaranteed; dedicated gate drivers meeting ±30 V VGS rating are advised.
How does the body diode performance of SIHG61N65EF-GE3 compare to standard MOSFETs in hard-switched PFC stages?
The SIHG61N65EF-GE3 body diode delivers trr = 212 ns and Qrr = 2.1 μC at TJ = 25 °C - approximately 40 % lower Qrr than standard 650 V MOSFETs. This directly reduces reverse recovery loss and associated EMI in continuous-conduction-mode (CCM) PFC, enabling higher efficiency and smaller EMI filters. Performance degrades at elevated temperature, so thermal management remains critical.
Is SIHG61N65EF-GE3 suitable for use in synchronous rectification configurations?
No - SIHG61N65EF-GE3 is a single N-channel high-side switch intended for primary-side switching, not synchronous rectification. Its body diode is optimized for fast recovery in hard- or soft-switched topologies, not low forward voltage in secondary-side rectification. For SR applications, Vishay offers dedicated low-VF trench MOSFETs like SiR626DP; using SIHG61N65EF-GE3 in SR would incur excessive conduction loss due to its 0.041 Ω RDS(on) and 0.9 V VSD.
What is the recommended gate resistor value for SIHG61N65EF-GE3 in a 150 kHz LLC resonant converter?
For a 150 kHz LLC resonant converter, a gate resistor of 9.1 Ω is validated in the datasheet (td(on) and td(off) test condition), yielding ~59 ns turn-on delay and ~217 ns turn-off delay. This value balances switching speed against gate ringing and EMI. Lower values (e.g., 4.7 Ω) may reduce losses but risk overshoot; higher values (>15 Ω) increase switching loss and degrade ZVS margin. Layout-dependent parasitics require empirical tuning.
SIHG61N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 47mOhm @ 30.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 371 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7407 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG61N65EF-GE3 FAQ
1.How can I place an order for SIHG61N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG61N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG61N65EF-GE3 reliable?
The price and inventory of SIHG61N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG61N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG61N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG61N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG61N65EF-GE3?
SIHG61N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG61N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG61N65EF-GE3?
For technical support, including SIHG61N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG61N65EF-GE3 requirements.
6.How does Aetrix verify that SIHG61N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG61N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG61N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG61N65EF-GE3?
All SIHG61N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG61N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG61N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG61N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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