Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG64N65E-GE3

Name: SIHG64N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG64N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHG64N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG64N65E-GE3.pdf

Description:: MOSFET N-CH 650V 64A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:481

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHG64N65E-GE3 from Vishay Siliconix is a 650 V, 64 A N-channel power MOSFET in TO-247AC package, optimized for high-efficiency switch-mode power supplies with R_DS(on) = 0.047 Ω at V_GS = 10 V, Q_g = 369 nC, and avalanche-rated (E_AS = 1800 mJ), deployed in telecom rectifiers and solar PV inverters.

For engineers reviewing the SIHG64N65E-GE3 datasheet, SIHG64N65E-GE3 pinout, SIHG64N65E-GE3 application, or SIHG64N65E-GE3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 0.24 °C/W), body diode recovery (Q_rr = 36 μC), gate charge waveform behavior, and safe operating area limits per Vishay S15-0291-Rev. B.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized charge balance for low FOM (R_DS(on) × Q_g). Its 650 V V_DS rating supports 400 V DC bus designs with 20 % margin, while dV/dt capability of 37 V/ns at T_J = 125 °C enables robust operation in hard-switched PFC stages.

The integral body diode features soft recovery (t_rr = 1394 ns max, Q_rr = 36 μC) and low forward voltage (V_SD = 1.2 V at I_S = 24 A), reducing commutation losses in synchronous rectification and bidirectional topologies like LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	650 V - Supports 400 V DC input systems with 62.5 % safety margin against transients
R_DS(on) Max	0.047 Ω @ V_GS = 10 V - Enables ≤ 19 W conduction loss at 64 A continuous drain current
Q_g Max	369 nC - Determines gate drive power requirement and switching speed in 100–300 kHz SMPS
E_AS	1800 mJ - Withstands unclamped inductive energy during fault conditions without failure
R_thJC	0.24 °C/W - Allows 520 W dissipation with ≤ 125 °C junction rise above 25 °C case temperature
Q_rr	36 μC - Quantifies reverse recovery charge impacting turn-on loss in bridge-leg commutation
t_r/t_f	122–183 ns / 103–206 ns - Defines minimum dead-time requirements to prevent shoot-through

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration, and thermal pad optimized for PCB copper pour attachment. Mounting requires mechanical torque ≤ 0.7 N·m per screw.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance input requiring <100 nA leakage; drives 369 nC total charge into 7497 pF C_iss
2 (Drain)	Main power output	Connected to heatsink via isolated metal tab; carries full load current and withstands 650 V transient spikes
3 (Source)	Reference node	Return path for ID and IS; defines VGS reference; body diode anode tied internally
4 (Drain)	Secondary drain connection	Parallel drain terminal for reduced package inductance and improved current sharing in parallel configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	17.3 Ω·nC - Reduces combined conduction + switching loss in high-frequency PFC and ZVS converters
Avalanche energy rating	1800 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
Soft-recovery body diode	Q_rr = 36 μC, t_rr = 1394 ns - Minimizes voltage overshoot and EMI during freewheeling in half-bridge topologies
High dV/dt immunity	37 V/ns at T_J = 125 °C - Prevents false turn-on in high-noise motor drive and welding applications
Lead (Pb)-free & Halogen-free	RoHS-compliant construction - Meets IPC-J-STD-609A Class 1 material categorization

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3 kW telecom rectifier with interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switching element handling 64 A peak current at 100 kHz with zero-voltage switching. Use Value: Low Q_g enables fast turn-on with minimal gate driver loss; 0.047 Ω R_DS(on) keeps conduction loss below 19 W at full load.	Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter using three-phase NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter stage driving LCL filter. Use Value: 650 V rating accommodates 1000 V DC string inputs; avalanche rating protects against lightning-induced transients.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Output stage in 7.5 kW variable frequency drive powering induction motors in HVAC compressors. IC Role / Device Role / Timing Role: Inverter leg switch operating at 8 kHz PWM with regenerative braking current reversal. Use Value: Soft-recovery body diode reduces voltage spike during commutation; 202 A pulsed current handles 3× overload peaks.	Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballast delivering 30–60 kHz AC to lamp electrodes. IC Role / Device Role / Timing Role: High-frequency switching device controlling lamp ignition and steady-state current regulation. Use Value: Low C_oss (366 pF) minimizes capacitive losses at 60 kHz; TO-247AC thermal performance sustains 100 % duty cycle operation.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3 kW telecom rectifier with interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element handling 64 A peak current at 100 kHz with zero-voltage switching.

Use Value: Low Q_g enables fast turn-on with minimal gate driver loss; 0.047 Ω R_DS(on) keeps conduction loss below 19 W at full load.

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter using three-phase NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter stage driving LCL filter.

Use Value: 650 V rating accommodates 1000 V DC string inputs; avalanche rating protects against lightning-induced transients.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Output stage in 7.5 kW variable frequency drive powering induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Inverter leg switch operating at 8 kHz PWM with regenerative braking current reversal.

Use Value: Soft-recovery body diode reduces voltage spike during commutation; 202 A pulsed current handles 3× overload peaks.

Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballast delivering 30–60 kHz AC to lamp electrodes.

IC Role / Device Role / Timing Role: High-frequency switching device controlling lamp ignition and steady-state current regulation.

Use Value: Low C_oss (366 pF) minimizes capacitive losses at 60 kHz; TO-247AC thermal performance sustains 100 % duty cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW68N65M5	650 V, 68 A, R_DS(on) = 0.038 Ω, Q_g = 220 nC, D²PAK package	Lower gate charge but higher peak current; smaller package limits thermal headroom	Preferred for space-constrained 2 kW PFC where gate drive efficiency outweighs thermal margin
IXFH64N65X3	650 V, 64 A, R_DS(on) = 0.042 Ω, Q_g = 290 nC, TO-247 package	Enhanced ruggedness (E_AS = 2200 mJ), lower C_oss, no dual-drain pin	Better suited for high-reliability industrial UPS where avalanche margin exceeds 20 %

Compared with SIHG64N65E-GE3, STW68N65M5 offers faster switching but reduced thermal derating above 100 °C, while IXFH64N65X3 trades slightly higher R_DS(on) for superior avalanche immunity and lower output capacitance-critical in ZVS resonant designs.

Availability

SIHG64N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing under Vishay's qualified manufacturing program.

Supply support for SIHG64N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with over 50 years of power device innovation.

The E Series Power MOSFET product line targets high-efficiency, high-reliability power conversion in telecom, industrial, and renewable energy systems, emphasizing low FOM, rugged avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHG64N65E-GE3 at 100 °C case temperature?

The SIHG64N65E-GE3 has a continuous drain current rating of 40 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures junction temperature remains within the -55 °C to +150 °C operating range. At T_C = 25 °C, the rating increases to 64 A.

Does SIHG64N65E-GE3 support gate drive voltages below 10 V?

Yes, SIHG64N65E-GE3 specifies a gate-source threshold voltage (V_GS(th)) between 2 V and 4 V, enabling partial enhancement at logic-level drive. However, full conduction (R_DS(on) ≤ 0.047 Ω) requires V_GS ≥ 10 V per the Product Summary. Operation at 5 V yields significantly higher on-resistance and is not recommended for high-current applications.

How is the dual-drain configuration (pins 2 and 4) used in PCB layout for SIHG64N65E-GE3?

The dual-drain configuration in SIHG64N65E-GE3 provides two electrically parallel drain terminals to reduce package inductance and improve current sharing in high-frequency layouts. Both pins must be connected to the same high-current copper pour or heatsink plane. This design lowers switching voltage overshoot and improves EMI performance in >100 kHz SMPS applications.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG64N65E-GE3?

The SIHG64N65E-GE3 body diode has a reverse recovery charge (Q_rr) of 18–36 μC, measured at T_J = 25 °C with I_F = 32 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts turn-on loss in synchronous rectification and half-bridge configurations, and is lower than legacy 650 V MOSFETs due to optimized epitaxial layer design.

Is SIHG64N65E-GE3 suitable for use in avalanche mode during normal operation?

No, SIHG64N65E-GE3 is rated for single-pulse avalanche energy (E_AS = 1800 mJ) as a ruggedness specification-not for repetitive avalanche operation. The datasheet explicitly states "repetitive rating; pulse width limited by maximum junction temperature," meaning sustained avalanche stress will exceed thermal limits. It should be operated within SOA boundaries using appropriate snubbing or clamping.

SIHG64N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 47mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 369 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7497 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG64N65E-GE3 FAQ

1.How can I place an order for SIHG64N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG64N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG64N65E-GE3 reliable?

The price and inventory of SIHG64N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG64N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG64N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG64N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG64N65E-GE3?

SIHG64N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG64N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG64N65E-GE3?

For technical support, including SIHG64N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG64N65E-GE3 requirements.

6.How does Aetrix verify that SIHG64N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG64N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG64N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG64N65E-GE3?

All SIHG64N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG64N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG64N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG64N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …