Vishay Siliconix SIHG73N60AE-GE3

Overview

SIHG73N60AE-GE3 from Vishay Siliconix is a 600 V, 73 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.035 Ω (typ. at V_GS = 10 V), Q_g = 197 nC (typ.), and 1019 mJ single-pulse avalanche energy. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG73N60AE-GE3 datasheet, SIHG73N60AE-GE3 pinout, SIHG73N60AE-GE3 application, or SIHG73N60AE-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.035 Ω R_DS(on), 394 nC max Q_g, TO-247AC thermal performance (R_thJC = 0.3 °C/W), and UIS-rated ruggedness for hard-switched topologies.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage, high-current operation with low gate charge and minimized output capacitance (C_oss = 241 pF typ.). Its body diode exhibits t_rr = 726 ns (typ.) and Q_rr = 16 μC (typ.) at 25 °C, supporting ZVS-capable resonant converters.

The MOSFET supports continuous drain current up to 60 A at T_C = 25 °C and 38 A at T_C = 100 °C, with linear derating of 3.3 W/°C above 100 °C. Its dV/dt immunity reaches 70 V/ns at T_J = 125 °C, enabling stable operation in noisy high-frequency power stages.

Key Specifications

Pinout & Package

SIHG73N60AE-GE3 is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and optimized thermal transfer via the metal backside. The package complies with JEDEC TO-247 AC outline and features 3 main terminals plus an auxiliary drain connection for improved current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW73N60M2 and IXFH73N60P, SIHG73N60AE-GE3 offers the lowest Q_g (197 nC) and highest E_AS (1019 mJ), making it optimal for high-efficiency, high-reliability PFC and resonant converter designs where gate drive simplicity and transient robustness are prioritized.

Availability

SIHG73N60AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG73N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHG73N60AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-current switching in industrial and communications power conversion where low R_DS(on) × Q_g and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHG73N60AE-GE3 at 100 °C case temperature?

The SIHG73N60AE-GE3 supports 38 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 60 A rating at 25 °C, with a linear derating factor of 3.3 W/°C applied above 100 °C. Designers must verify junction temperature using R_thJC = 0.3 °C/W and actual power dissipation to ensure safe operation within the -55 to +150 °C junction range.

Does SIHG73N60AE-GE3 have a fully isolated drain in its TO-247AC package?

Yes, SIHG73N60AE-GE3 uses the TO-247AC package variant with electrically isolated drain tab, confirmed by Vishay's Package Information document (91360). This isolation allows direct mounting to a common heatsink without additional insulating hardware, simplifying thermal design in high-voltage applications such as PFC and inverter stages where multiple devices share a heatsink.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG73N60AE-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHG73N60AE-GE3 is 16 μC, measured at T_J = 25 °C with I_F = 36.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is critical for estimating commutation losses in synchronous rectification and bridge-leg switching; the device's Q_rr is lower than many competing 600 V MOSFETs, contributing to reduced EMI and improved efficiency in hard-switched topologies.

Can SIHG73N60AE-GE3 be used as a direct replacement for older Vishay 600 V MOSFETs like SIHF73N60U?

No, SIHG73N60AE-GE3 is not a direct replacement for SIHF73N60U. While both are 600 V, 73 A N-channel MOSFETs in TO-247AC, the SIHG73N60AE-GE3 features significantly lower Q_g (197 nC vs. ~320 nC), lower R_DS(on) (0.035 Ω vs. 0.042 Ω), and enhanced avalanche rating (1019 mJ vs. 720 mJ). Gate drive timing and layout may require re-optimization, and the improved performance does not guarantee drop-in compatibility without system-level validation.

What is the gate-source threshold voltage (V_GS(th)) range for SIHG73N60AE-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHG73N60AE-GE3 is specified as 2 V minimum to 4 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious turn-on in high-dv/dt environments. The typical value falls near 3 V, supporting robust operation across temperature and process variation without requiring negative gate bias for safety.