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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG73N60AEL-GE3

Name: SIHG73N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHG73N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG73N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG73N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 69A TO247AC

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Product details

Overview

SIHG73N60AEL-GE3 from Vishay Siliconix is a 600 V, 69 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.035 Ω (typ. at V_GS = 10 V), Q_g = 171 nC (typ.), and E_AS = 1706 mJ - optimized for high-efficiency, high-power SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHG73N60AEL-GE3 datasheet, SIHG73N60AEL-GE3 pinout, SIHG73N60AEL-GE3 application, or SIHG73N60AEL-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance R_thJC = 0.24 °C/W, and body diode recovery performance (t_rr = 479 ns typ., Q_rr = 11 μC) in hard-switched topologies.

Technical Context

This device employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve low FOM (R_DS(on) × Q_g) while maintaining robust UIS capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide temperature and drive conditions.

The integrated body diode exhibits controlled reverse recovery with t_rr = 479 ns (typ.) and I_RRM = 42 A at 25 °C, enabling reliable operation in bridge-leg configurations without external snubbers in moderate-frequency PFC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin for transient overvoltage in telecom rectifiers
R_DS(on) typ.	0.035 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.3 W conduction loss at 60 A, reducing heatsink requirements
Q_g max	342 nC - determines gate driver power demand; compatible with standard 1–2 A peak drivers at ≤100 kHz
E_AS	1706 mJ - rated unclamped inductive switching energy allows safe operation during load dump or short-circuit events
R_thJC	0.24 °C/W - enables 520 W continuous dissipation with modest heatsinking (ΔT = 125 °C)
t_rr	479 ns typ. - limits diode reverse recovery stress on complementary switch in half-bridge PFC
I_D cont.	69 A at T_C = 25 °C - defines maximum steady-state current before thermal derating begins

Pinout & Package

TO-247AC package: isolated tab (drain-connected), 3-pin through-hole outline with industry-standard footprint and mounting hole. Thermal path optimized via direct drain-to-case conduction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 6709 pF requires careful gate loop layout to minimize ringing
D (Drain)	Main power output terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
S (Source)	Power return and reference node	Serves as local ground for gate driver; source inductance directly impacts switching speed and dV/dt immunity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	12.0 Ω·nC - reduces combined conduction + switching losses in 50–100 kHz SMPS designs
Avalanche-rated (UIS)	1706 mJ single-pulse energy - eliminates need for external clamping in inductive load switching
Ultra-low Q_gd/Q_g ratio	57/342 ≈ 17 % - improves Miller immunity and enables faster, more predictable turn-off
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)
Body diode softness factor	Q_rr/I_RRM = 0.26 μC/A - minimizes voltage overshoot and EMI during diode commutation

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 75 kHz with synchronous rectification on secondary. Use Value: Low R_DS(on) reduces conduction loss by 18 % vs. legacy 650 V MOSFETs; avalanche rating protects against transformer leakage inductance spikes.	Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with critical gate charge control. Use Value: Q_g = 171 nC (typ.) enables efficient drive with IR2110-based gate driver; low C_oss (282 pF) minimizes turn-off loss at high bus voltage.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage interfacing 600–800 V PV array. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-level NPC topology for reduced switching loss and improved thermal margin. Use Value: R_thJC = 0.24 °C/W supports 100 °C case temperature operation; t_rr = 479 ns prevents shoot-through during dead-time transitions.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC). IC Role / Device Role / Timing Role: Hard-switched phase-leg device operating at 8 kHz with regenerative braking energy recirculation. Use Value: E_AS = 1706 mJ absorbs inductive kickback during rapid deceleration; IS = 68 A sustains peak motor surge currents without derating.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 75 kHz with synchronous rectification on secondary.

Use Value: Low R_DS(on) reduces conduction loss by 18 % vs. legacy 650 V MOSFETs; avalanche rating protects against transformer leakage inductance spikes.

Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with critical gate charge control.

Use Value: Q_g = 171 nC (typ.) enables efficient drive with IR2110-based gate driver; low C_oss (282 pF) minimizes turn-off loss at high bus voltage.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage interfacing 600–800 V PV array.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-level NPC topology for reduced switching loss and improved thermal margin.

Use Value: R_thJC = 0.24 °C/W supports 100 °C case temperature operation; t_rr = 479 ns prevents shoot-through during dead-time transitions.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC).

IC Role / Device Role / Timing Role: Hard-switched phase-leg device operating at 8 kHz with regenerative braking energy recirculation.

Use Value: E_AS = 1706 mJ absorbs inductive kickback during rapid deceleration; IS = 68 A sustains peak motor surge currents without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW73N60M2	R_DS(on) = 0.032 Ω (typ.), Q_g = 150 nC (typ.), TO-247 long leads; lower gate charge but no specified E_AS rating	Preferred where gate drive loss dominates; unsuitable for unclamped inductive loads without external protection	Select STW73N60M2 only if avalanche testing is not required and layout allows tighter gate loop control.
IXFH72N60P3	R_DS(on) = 0.034 Ω (typ.), Q_g = 220 nC (typ.), higher C_iss (8200 pF); includes full UIS characterization per JEDEC JESD24-11	Better suited for high-reliability industrial systems requiring documented avalanche validation	Choose IXFH72N60P3 when compliance with JEDEC avalanche test standards is mandatory for certification.

Compared with STW73N60M2 and IXFH72N60P3, SIHG73N60AEL-GE3 delivers balanced trade-offs: highest E_AS rating among the three (1706 mJ), mid-range Q_g, and verified body diode softness - making it optimal for cost-sensitive telecom and server PFC where ruggedness and efficiency coexist.

Availability

SIHG73N60AEL-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG73N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q200 qualified processes.

The EL Series Power MOSFETs, including SIHG73N60AEL-GE3, were engineered for high-efficiency, high-reliability primary-side switching in enterprise-grade power conversion systems operating at 600 V class.

FAQ

What is the maximum continuous drain current rating for SIHG73N60AEL-GE3 at 100 °C case temperature?

The SIHG73N60AEL-GE3 supports 44 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derated value reflects thermal limitations of the TO-247AC package and must be validated against actual board-level thermal resistance and ambient conditions in the final design. The SIHG73N60AEL-GE3 datasheet specifies linear derating beyond 100 °C at 4.2 W/°C.

Does SIHG73N60AEL-GE3 have a fully characterized body diode for synchronous rectification?

The SIHG73N60AEL-GE3 includes full body diode specifications: V_SD = 1.2 V (typ. at I_S = 36.5 A, T_J = 25 °C), t_rr = 479 ns (typ.), Q_rr = 11 μC (typ.), and I_RRM = 42 A. These parameters are measured and guaranteed, enabling use in synchronous rectifier or bidirectional topologies where diode behavior directly impacts efficiency and reliability. The SIHG73N60AEL-GE3 body diode is not optimized for ultra-fast recovery but provides controlled softness for reduced EMI.

Is SIHG73N60AEL-GE3 suitable for zero-voltage switching (ZVS) circuits?

Yes, the SIHG73N60AEL-GE3 is well-suited for ZVS operation due to its low Q_gd/Q_g ratio (≈17 %) and low C_oss (282 pF typ.), which reduce capacitive turn-on loss and improve resonant tank predictability. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on even with residual gate voltage after ZVS transition. Designers should verify ZVS boundary conditions using the SIHG73N60AEL-GE3 C_oss(V_DS) curve and actual circuit parasitics.

What is the gate-source voltage limit for SIHG73N60AEL-GE3, and can it tolerate negative bias?

The SIHG73N60AEL-GE3 has a ±30 V gate-source voltage rating, allowing up to –30 V negative bias for enhanced noise immunity and Miller effect suppression during high-dV/dt switching. This specification is absolute maximum and applies across the full operating temperature range. Applying –5 V to –10 V during off-state improves robustness in high-noise industrial environments. The SIHG73N60AEL-GE3 gate oxide is rated for this extended range without degradation.

How does the avalanche energy rating of SIHG73N60AEL-GE3 compare to standard 600 V MOSFETs?

The SIHG73N60AEL-GE3 is rated for 1706 mJ single-pulse avalanche energy (E_AS) under standardized test conditions (V_DD = 120 V, L = 28.2 mH, I_AS = 11 A), exceeding typical 600 V MOSFETs by 20–40 %. This high E_AS stems from process-level ruggedness enhancements and enables operation in unclamped inductive circuits without external snubbers. The SIHG73N60AEL-GE3 datasheet confirms this rating with test waveforms and thermal constraints.

SIHG73N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 36.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 342 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6709 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG73N60AEL-GE3 FAQ

1.How can I place an order for SIHG73N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG73N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG73N60AEL-GE3 reliable?

The price and inventory of SIHG73N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG73N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG73N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG73N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG73N60AEL-GE3?

SIHG73N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG73N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG73N60AEL-GE3?

For technical support, including SIHG73N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG73N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHG73N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG73N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG73N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG73N60AEL-GE3?

All SIHG73N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG73N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG73N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHG73N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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