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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG73N60E-E3

Name: SIHG73N60E-E3
Brand: Vishay Siliconix
SKU: SIHG73N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG73N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG73N60E-E3.pdf

Description:: MOSFET N-CH 600V 73A TO247AC

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Product details

Overview

SIHG73N60E-E3 from Vishay Siliconix is a 600 V, 73 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.039 Ω at V_GS = 10 V, Q_g = 362 nC, and avalanche-rated (E_AS = 2030 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in PFC stages and solar inverters.

For engineers reviewing the SIHG73N60E-E3 datasheet, SIHG73N60E-E3 pinout, SIHG73N60E-E3 application, or SIHG73N60E-E3 equivalent, key selection criteria include its 600 V blocking voltage, 73 A continuous drain current at T_C = 25 °C, ultra-low gate charge, robust body diode recovery (Q_rr = 29.2 μC), and TO-247AC thermal performance (R_thJC = 0.24 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (7700 pF) and minimized C_oss (320 pF) reduce capacitive losses during turn-on/turn-off transitions, while the 0.9–1.2 V body diode forward voltage enables efficient freewheeling in bridge topologies.

The device supports unclamped inductive switching with rated single-pulse avalanche energy of 2030 mJ and exhibits stable V_DS temperature coefficient (+0.65 V/°C), ensuring predictable breakdown behavior across -55 to +150 °C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage before avalanche onset; suitable for 400 V DC bus systems with 50 % safety margin.
R_DS(on) max	0.039 Ω at V_GS = 10 V - Enables <1.4 W conduction loss at 60 A, critical for thermal management in high-current PFC designs.
Q_g max	362 nC - Determines gate driver power requirement; impacts switching speed and EMI in 50–100 kHz SMPS operation.
E_AS	2030 mJ - Confirmed single-pulse avalanche capability allows reliable operation under transient overvoltage conditions without snubbers.
I_D cont.	73 A at T_C = 25 °C - Supports high-power output stages; derates to 46 A at T_C = 100 °C per linear derating factor of 4.2 W/°C.
R_thJC	0.24 °C/W - Enables direct heatsink mounting with minimal thermal resistance; supports >500 W dissipation with 120 °C ΔT.
Q_rr	29.2 μC - Quantifies reverse recovery charge; directly affects switching loss and EMI in synchronous rectification and half-bridge configurations.

Pinout & Package

TO-247AC package with isolated drain tab, standard 3-lead configuration, and industry-standard footprint (20.55 mm × 15.70 mm × 21.5 mm). Thermal pad on drain side provides low-inductance, high-current path and optimal heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires <362 nC charge for full enhancement; high input impedance minimizes driver loading.
2 (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to metal tab for low-inductance, high-current return path to heatsink.
3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential to suppress shoot-through in bridge circuits.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	14.1 Ω·nC - Balances conduction and switching losses for optimal efficiency in 50–100 kHz PFC and inverter stages.
Avalanche-rated (UIS)	2030 mJ single-pulse - Eliminates need for external clamping in inductive load switching, reducing BOM count and board space.
Ultra-low Q_gd/Q_g ratio	98/362 ≈ 27 % - Improves Miller immunity and dv/dt ruggedness, enabling stable operation in high-dV/dt environments (60 V/ns).
Body diode softness	trr = 1314 ns, I_RRM = 34.7 A - Limits voltage overshoot during commutation; reduces stress on adjacent devices in bridge legs.
Lead (Pb)-free & Halogen-free	E3 suffix - Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; compatible with standard lead-free assembly.

Applications

Power Factor Correction (PFC)	Solar Photovoltaic Inverters
Use Scenario: Boost converter stage in 3–5 kW industrial PFC modules operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching device handling full line-frequency AC input rectified to 400 V DC bus. Use Value: Low R_DS(on) and Q_g minimize total losses (<2.1 W conduction + <1.8 W switching at 60 A/100 kHz), enabling >98.5 % efficiency.	Use Scenario: DC-AC H-bridge in string inverters converting 600 V PV array output to grid-synchronized 230 V AC. IC Role / Device Role / Timing Role: High-side switch in unipolar PWM topology with active clamping and zero-voltage switching assist. Use Value: 600 V rating accommodates 1.2× PV open-circuit voltage; avalanche rating protects against lightning-induced transients on DC side.
Industrial Motor Drives	Induction Heating Systems
Use Scenario: Inverter output stage in 7.5 kW variable-frequency drives powering 3-phase induction motors. IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack IGBT/MOSFET module replacement design operating at 8–16 kHz carrier frequency. Use Value: Robust body diode and low Q_rr enable reliable regenerative braking without external anti-parallel diodes.	Use Scenario: Half-bridge resonant inverter in 10 kW domestic induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant tank circuit with high di/dt demands (>30 A/μs). Use Value: dV/dt rating of 60 V/ns and soft recovery prevent false triggering and voltage spikes during zero-crossing commutation.

Power Factor Correction (PFC)

Solar Photovoltaic Inverters

Use Scenario: Boost converter stage in 3–5 kW industrial PFC modules operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching device handling full line-frequency AC input rectified to 400 V DC bus.

Use Value: Low R_DS(on) and Q_g minimize total losses (<2.1 W conduction + <1.8 W switching at 60 A/100 kHz), enabling >98.5 % efficiency.

Use Scenario: DC-AC H-bridge in string inverters converting 600 V PV array output to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: High-side switch in unipolar PWM topology with active clamping and zero-voltage switching assist.

Use Value: 600 V rating accommodates 1.2× PV open-circuit voltage; avalanche rating protects against lightning-induced transients on DC side.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Inverter output stage in 7.5 kW variable-frequency drives powering 3-phase induction motors.

IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack IGBT/MOSFET module replacement design operating at 8–16 kHz carrier frequency.

Use Value: Robust body diode and low Q_rr enable reliable regenerative braking without external anti-parallel diodes.

Use Scenario: Half-bridge resonant inverter in 10 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant tank circuit with high di/dt demands (>30 A/μs).

Use Value: dV/dt rating of 60 V/ns and soft recovery prevent false triggering and voltage spikes during zero-crossing commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW73N60M2	R_DS(on) = 0.035 Ω (lower), Q_g = 220 nC (lower), but E_AS not specified; TO-247 package with same pinout.	Lacks documented avalanche rating; unsuitable for unclamped inductive loads without external protection.	Prefer SIHG73N60E-E3 where system-level reliability under fault conditions is mandatory.
IXFH73N60P	R_DS(on) = 0.038 Ω, Q_g = 320 nC, E_AS = 1900 mJ; slightly lower thermal resistance (R_thJC = 0.22 °C/W).	Same 600 V/73 A class; optimized for higher-frequency ZVS topologies with faster trr (520 ns typical).	Choose IXFH73N60P only if design targets >150 kHz operation and can accept reduced avalanche margin.

Compared with STW73N60M2 and IXFH73N60P, SIHG73N60E-E3 offers the highest confirmed avalanche energy (2030 mJ), balanced Q_g/R_DS(on) trade-off, and verified 60 V/ns dV/dt immunity-making it the most robust choice for industrial PFC and solar inverter applications demanding field reliability.

Availability

SIHG73N60E-E3 is available at Aetrix Electronics and suitable for power factor correction, solar photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG73N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line is engineered for high-voltage, high-current hard-switching applications including SMPS, PFC, and renewable energy inverters-prioritizing low FOM, avalanche robustness, and thermal reliability.

FAQ

What is the maximum continuous drain current rating for SIHG73N60E-E3 at 100 °C case temperature?

The SIHG73N60E-E3 has a continuous drain current rating of 46 A at T_C = 100 °C, derived from its 73 A rating at T_C = 25 °C and linear derating factor of 4.2 W/°C. This value is confirmed in the Absolute Maximum Ratings table and reflects safe operation under sustained thermal load with appropriate heatsinking.

Does SIHG73N60E-E3 support gate drive voltages below 10 V?

Yes, SIHG73N60E-E3 specifies gate-source threshold voltage (V_GS(th)) between 2 V and 4 V, enabling partial enhancement at lower gate voltages. However, full conduction (R_DS(on) ≤ 0.039 Ω) requires V_GS = 10 V per the Product Summary. Driving below 10 V increases R_DS(on) and conduction loss significantly.

Is SIHG73N60E-E3 suitable for use in avalanche mode during normal operation?

No-SIHG73N60E-E3 is rated for single-pulse avalanche energy (E_AS = 2030 mJ) as a ruggedness specification, not for repetitive avalanche operation. The datasheet explicitly states "repetitive rating; pulse width limited by maximum junction temperature," meaning avalanche must remain an infrequent, transient event-not a design operating condition.

What is the thermal resistance from junction to case (R_thJC) for SIHG73N60E-E3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG73N60E-E3 is 0.24 °C/W, measured from junction to the drain tab. This value is critical for calculating maximum allowable power dissipation and heatsink requirements; it assumes proper mounting pressure and thermal interface material on the TO-247AC drain surface.

How does the body diode performance of SIHG73N60E-E3 compare to standard fast recovery diodes?

The SIHG73N60E-E3 body diode has V_SD = 0.9–1.2 V at 36 A and t_rr = 657–1314 ns, with Q_rr = 14.6–29.2 μC. While slower than dedicated ultrafast diodes, its soft recovery characteristic (low I_RRM = 34.7 A) reduces voltage overshoot and EMI-making it suitable for freewheeling in hard-switched topologies where discrete diodes would require snubbing.

SIHG73N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 362 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG73N60E-E3 FAQ

1.How can I place an order for SIHG73N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG73N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG73N60E-E3 reliable?

The price and inventory of SIHG73N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG73N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG73N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG73N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG73N60E-E3?

SIHG73N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG73N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG73N60E-E3?

For technical support, including SIHG73N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG73N60E-E3 requirements.

6.How does Aetrix verify that SIHG73N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG73N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG73N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG73N60E-E3?

All SIHG73N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG73N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG73N60E-E3 part is unused and in its original packaging.

Return procedure for SIHG73N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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