Vishay Siliconix SIHG73N60E-GE3

Overview

SIHG73N60E-GE3 from Vishay Siliconix is a 600 V, 73 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.039 Ω (max) at V_GS = 10 V, Q_g = 362 nC (max), and avalanche-rated (E_AS = 2030 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in PFC and SMPS stages.

For engineers reviewing the SIHG73N60E-GE3 datasheet, SIHG73N60E-GE3 pinout, SIHG73N60E-GE3 application, or SIHG73N60E-GE3 equivalent, key selection criteria include its 600 V blocking capability, 0.032 Ω typical R_DS(on), 7700 pF C_iss, robust UIS rating, and thermal resistance R_thJC = 0.24 °C/W - critical for high-power industrial and renewable energy inverters.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_g = 241–362 nC, Q_gd = 98 nC) supports controlled dV/dt (60 V/ns max) and reduced Miller-induced turn-off delay, enabling stable operation in continuous conduction mode (CCM) PFC and 50–100 kHz LLC resonant converters.

The integrated body diode exhibits t_rr = 657–1314 ns and Q_rr = 14.6–29.2 μC at T_J = 25 °C, with V_SD = 0.9–1.2 V at I_S = 36 A, supporting synchronous rectification and bidirectional current handling in solar microinverters and motor drive freewheeling paths.

Key Specifications

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin through-hole configuration, and thermal pad optimized for mechanical mounting and heat transfer to external heatsinks. Dimensions per JEDEC TO-247AC (Facility Code Y/N): D ≈ 20.5 mm, E ≈ 15.7 mm, L ≈ 15.3 mm, thermal pad D1/E1 optional.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW73N60M2 and IXFH73N60P, SIHG73N60E-GE3 offers superior avalanche ruggedness and lead-free/halogen-free compliance out-of-box, making it optimal for industrial PFC and solar inverters where reliability under transient stress and environmental compliance are mandatory.

Availability

SIHG73N60E-GE3 is available at Aetrix Electronics and suitable for power factor correction, solar photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHG73N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHG73N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability hard-switching power conversion in industrial, renewable energy, and lighting systems.

FAQ

What is the maximum continuous drain current rating for SIHG73N60E-GE3 at 100 °C case temperature?

The SIHG73N60E-GE3 supports 46 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 73 A rating at 25 °C, based on a linear derating factor of 4.2 W/°C and R_thJC = 0.24 °C/W. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full-load conditions to sustain this current in SIHG73N60E-GE3 applications.

Does SIHG73N60E-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHG73N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 2030 mJ. The test condition is defined as V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 12 A. This rating confirms robustness against inductive switching transients in motor drives and welding equipment, and SIHG73N60E-GE3 should not be operated beyond this limit without additional clamping protection.

What is the gate threshold voltage range for SIHG73N60E-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHG73N60E-GE3 is specified from 2 V to 4 V at T_J = 25 °C. This relatively narrow range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must deliver ≥10 V to achieve full R_DS(on) specification; using only 5 V risks incomplete enhancement and excessive conduction loss. SIHG73N60E-GE3 therefore requires a dedicated 10–15 V gate driver, not logic-level 3.3 V or 5 V sources.

How does the body diode performance of SIHG73N60E-GE3 compare to standard fast recovery diodes in bridge configurations?

The SIHG73N60E-GE3 body diode has t_rr = 657–1314 ns and Q_rr = 14.6–29.2 μC at T_J = 25 °C, with V_SD = 0.9–1.2 V at I_S = 36 A. While slower than dedicated ultrafast diodes, its soft recovery characteristic minimizes voltage overshoot and EMI during commutation - a key advantage in half-bridge and full-bridge topologies where hard-recovery diodes would require large snubbers. SIHG73N60E-GE3 thus simplifies layout and improves system reliability in PFC and inverter legs.

Is SIHG73N60E-GE3 compatible with standard TO-247AC heatsink mounting hardware?

Yes, SIHG73N60E-GE3 uses the industry-standard TO-247AC package with mechanical dimensions compliant with JEDEC outline TO-247 (variation AC), including a flat, isolated drain tab. It mates directly with common TO-247-compatible heatsinks and mounting kits. Thermal interface material and torque specifications (typically 0.5–0.7 N·m for M3 screws) must follow Vishay's recommendations to maintain R_thJC = 0.24 °C/W. SIHG73N60E-GE3 does not require custom fixtures or adapters for mechanical integration.