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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG80N60EF-GE3

Name: SIHG80N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG80N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG80N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG80N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 80A TO247AC

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Product details

Overview

SIHG80N60EF-GE3 from Vishay Siliconix is a 600 V, 80 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.028 Ω (typ. at V_GS = 10 V), Q_g = 266 nC (typ.), and avalanche-rated (E_AS = 1142 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG80N60EF-GE3 datasheet, SIHG80N60EF-GE3 pinout, SIHG80N60EF-GE3 application, or SIHG80N60EF-GE3 equivalent, this device is selected for high-current, high-voltage hard-switched topologies requiring fast body diode recovery (t_rr = 206 ns typ.), robust UIS capability, and thermal performance enabled by R_thJC = 0.24 °C/W.

Technical Context

This EF-series MOSFET employs planar stripe silicon technology optimized for reduced figure-of-merit (R_DS(on) × Q_g) and low C_iss (6600 pF typ.). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide drive conditions, while the integral fast-recovery body diode supports synchronous rectification and ZVS-assisted transitions.

The device operates with V_DS up to 600 V and supports continuous drain current of 80 A at T_C = 25 °C, derating linearly to 51 A at T_C = 100 °C. Its dv/dt immunity (70 V/ns at T_J = 125 °C) and unclamped inductive switching (UIS) rating enable reliable operation in noisy, high-dI/dt environments such as motor drives and solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with 50 % margin for transient overvoltage in PFC and industrial SMPS.
R_DS(on) typ.	0.028 Ω at V_GS = 10 V, I_D = 40 A - Enables <1.1 W conduction loss at 40 A, critical for thermal management in compact power modules.
Q_g typ.	266 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers without excessive dissipation.
t_rr typ.	206 ns at I_F = 40 A, dI/dt = 100 A/μs - Minimizes reverse recovery loss and EMI in bridge-leg configurations with freewheeling paths.
E_AS	1142 mJ - Withstands single-pulse inductive energy events without failure, supporting rugged design in welding and motor control.
R_thJC	0.24 °C/W - Allows >400 W power dissipation with modest heatsinking (e.g., 10 °C/W sink yields T_J ≈ 125 °C at 520 W).
I_D cont.	80 A at T_C = 25 °C - Sustains full-load current in high-density 3–5 kW server PSUs without parallel devices.

Pinout & Package

SIHG80N60EF-GE3 is housed in a TO-247AC package with isolated tab (drain-connected), optimized for high-voltage isolation and thermal transfer. The plastic body meets JEDEC TO-247 AC outline with thermal pad contour optional (D1/E1 dimensions per Rev. 31-Oct-2022 spec).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; low input capacitance (C_iss = 6600 pF) reduces driver loading and propagation delay.
2 (Drain)	High-side power output	Connected to internal die backside; electrically tied to metal tab-requires insulated mounting in high-voltage applications.
3 (Source)	Power return / reference node	Serves as common return for load current and gate drive reference; low-inductance layout essential for fast switching stability.
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and lower package inductance; must be connected to same potential as Pin 2.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	7.45 Ω·nC (0.028 Ω × 266 nC) - Directly improves efficiency in both conduction and switching domains for 100–300 kHz PFC stages.
Fast body diode (t_rr, Q_rr)	t_rr = 206 ns, Q_rr = 1.9 μC - Reduces diode conduction loss and shoot-through risk during commutation in half-bridge inverters.
Avalanche energy rated (UIS)	E_AS = 1142 mJ - Eliminates need for external snubbers in inductive load switching, simplifying PCB layout and BOM.
High dv/dt immunity	70 V/ns at T_J = 125 °C - Prevents false turn-on in high-noise environments like motor drives and industrial UPS systems.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912 - Meets global environmental compliance requirements.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW active clamp forward or LLC resonant converter for data center PSU. IC Role / Device Role / Timing Role: High-current, high-voltage main switch handling 80 A peak drain current with minimal R_DS(on) loss. Use Value: Enables >96 % efficiency at full load by reducing conduction loss vs. higher-R_DS(on) alternatives, directly lowering cooling cost and footprint.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating at 100 kHz with universal AC input. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing 400 V DC link and 50 A RMS input current. Use Value: Low Q_g and fast t_rr minimize switching loss and EMI generation, easing EMI filter design and meeting EN 55032 Class A limits.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in string inverter DC/DC stage converting 600–1000 V PV array output to 400 V bus. IC Role / Device Role / Timing Role: High-voltage, high-current switch operating in hard-switched buck-boost topology with repetitive UIS stress. Use Value: Rated E_AS withstands worst-case inductive transients from PV array impedance mismatch, improving field reliability.	Use Scenario: Inverter leg switch in 15 kW HVAC compressor drive using 650 V DC bus and 16 kHz PWM. IC Role / Device Role / Timing Role: Main power switch delivering 80 A continuous phase current with fast body diode for regenerative braking. Use Value: Low C_oss (320 pF) and Co(tr) = 1051 pF reduce capacitive turn-off loss, enabling higher PWM frequency without efficiency penalty.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW active clamp forward or LLC resonant converter for data center PSU.

IC Role / Device Role / Timing Role: High-current, high-voltage main switch handling 80 A peak drain current with minimal R_DS(on) loss.

Use Value: Enables >96 % efficiency at full load by reducing conduction loss vs. higher-R_DS(on) alternatives, directly lowering cooling cost and footprint.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating at 100 kHz with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing 400 V DC link and 50 A RMS input current.

Use Value: Low Q_g and fast t_rr minimize switching loss and EMI generation, easing EMI filter design and meeting EN 55032 Class A limits.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in string inverter DC/DC stage converting 600–1000 V PV array output to 400 V bus.

IC Role / Device Role / Timing Role: High-voltage, high-current switch operating in hard-switched buck-boost topology with repetitive UIS stress.

Use Value: Rated E_AS withstands worst-case inductive transients from PV array impedance mismatch, improving field reliability.

Use Scenario: Inverter leg switch in 15 kW HVAC compressor drive using 650 V DC bus and 16 kHz PWM.

IC Role / Device Role / Timing Role: Main power switch delivering 80 A continuous phase current with fast body diode for regenerative braking.

Use Value: Low C_oss (320 pF) and Co(tr) = 1051 pF reduce capacitive turn-off loss, enabling higher PWM frequency without efficiency penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80N60DM6	R_DS(on) = 0.029 Ω, Q_g = 220 nC, t_rr = 190 ns, TO-247 long leads	Lower Q_g but slightly higher R_DS(on); no specified E_AS rating	Preferred where gate drive loss dominates and avalanche robustness is secondary; requires verification of UIS capability in target circuit.
IXFH80N60X3	R_DS(on) = 0.027 Ω, Q_g = 250 nC, t_rr = 210 ns, TO-247 non-isolated tab	Near-identical R_DS(on)/Q_g but non-isolated drain tab requires insulating hardware	Valid for cost-sensitive industrial designs where mechanical isolation can be managed; not drop-in due to tab isolation difference.

Compared with STW80N60DM6 and IXFH80N60X3, SIHG80N60EF-GE3 offers superior avalanche ruggedness (1142 mJ E_AS) and guaranteed isolated drain tab-critical for high-reliability telecom and server power where transient immunity and safety isolation are non-negotiable.

Availability

SIHG80N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHG80N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical integration across silicon design, wafer fabrication, and packaging.

The EF Series was developed specifically for high-efficiency, high-reliability switch-mode power conversion in 400–800 V DC bus applications, emphasizing low FOM, fast body diode, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHG80N60EF-GE3 at case temperature 100 °C?

The SIHG80N60EF-GE3 has a maximum continuous drain current (I_D) of 51 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 80 A at T_C = 25 °C using the 4.2 W/°C thermal derating factor. Operation above this current requires active thermal management or reduced duty cycle to maintain junction temperature ≤150 °C.

Does SIHG80N60EF-GE3 have a fully rated avalanche energy specification?

Yes, SIHG80N60EF-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 1142 mJ, tested under defined conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 9.0 A. This rating is guaranteed per datasheet and supports robust design in motor drives and welding equipment where inductive energy spikes occur.

What is the typical reverse recovery time (t_rr) of the body diode in SIHG80N60EF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHG80N60EF-GE3 is 206 ns, measured at T_J = 25 °C, I_F = I_S = 40 A, dI/dt = 100 A/μs, and V_R = 400 V. This fast recovery characteristic minimizes switching loss and voltage overshoot when used in freewheeling or synchronous rectification roles.

Is SIHG80N60EF-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHG80N60EF-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, as stated in the Absolute Maximum Ratings section. The device is marked "-GE3" indicating lead (Pb)-free and halogen-free construction per Vishay's material compliance standards (doc# 99912).

What is the gate-source threshold voltage range for SIHG80N60EF-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHG80N60EF-GE3 is specified from 2.0 V to 4.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing noise immunity against spurious gate excitation in high-dv/dt environments.

SIHG80N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 400 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG80N60EF-GE3 FAQ

1.How can I place an order for SIHG80N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG80N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG80N60EF-GE3 reliable?

The price and inventory of SIHG80N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG80N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG80N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG80N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG80N60EF-GE3?

SIHG80N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG80N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG80N60EF-GE3?

For technical support, including SIHG80N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG80N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG80N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG80N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG80N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG80N60EF-GE3?

All SIHG80N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG80N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG80N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG80N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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