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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH068N60E-T1-GE3

Name: SIHH068N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH068N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH068N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH068N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 34A PPAK 8 X 8

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Product details

Overview

SIHH068N60E-T1-GE3 from Vishay Siliconix is a 600 V, 34 A N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.059 Ω (typ) at V_GS = 10 V, Q_g = 53 nC (typ), and E_AS = 226 mJ, enabling reduced conduction and switching losses in telecom rectifiers and solar inverters.

For engineers reviewing the SIHH068N60E-T1-GE3 datasheet, SIHH068N60E-T1-GE3 pinout, SIHH068N60E-T1-GE3 application, or SIHH068N60E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, Kelvin-source noise immunity, and thermal performance (R_thJC = 0.48 °C/W).

Technical Context

This E-series MOSFET employs 4th-generation silicon technology with optimized cell layout to minimize Co(er) (94 pF) and Crss (6 pF), directly reducing Miller-induced turn-off delay and improving hard-switching efficiency. Its Kelvin source terminal separates power and signal return paths, suppressing gate oscillation under high di/dt conditions.

The device supports unclamped inductive switching up to 226 mJ (T_J = 25 °C) and operates across -55 °C to +150 °C junction temperature range. Its V_GS(th) of 3.0–5.0 V ensures robust gate drive compatibility with standard 10 V controllers while maintaining low IDSS (<1 μA at 600 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and PV inverters
R_DS(on) typ @ 10 V	0.059 Ω - enables ≤2.7 W conduction loss at 15 A, critical for thermally constrained server PSU modules
Q_g max	80 nC - defines gate drive power requirement; combined with Q_gd = 20 nC, sets hard-switching timing control precision
E_AS	226 mJ - guarantees single-pulse avalanche survivability during output short-circuit events in industrial motor drives
R_thJC max	0.62 °C/W - allows >180 W continuous power dissipation with 30 °C case temperature rise, supporting compact heatsink designs
C_oss(er)	94 pF - energy-related output capacitance determines turn-on loss in ZVS circuits; lower than legacy 600 V MOSFETs by ~35 %
V_SD max	1.2 V @ 15 A - body diode forward voltage impacts synchronous rectification efficiency and reverse recovery stress in LLC resonant converters

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; requires <1.4 Ω gate resistance to limit ringing per typical switching waveforms
Pin 2	Kelvin Source	Dedicated low-inductance source return for gate driver feedback-separate from high-current source path (Pin 3)
Pin 3	Source	Main power source terminal; carries full load current (up to 34 A continuous); connected to PCB ground plane
Pin 4	Drain	Main power drain terminal; electrically and thermally connected to large copper pour or heatsink via exposed pad

Key Features

Feature	Design Value
4th-generation E-series silicon	Reduces R_DS(on) × Q_g FOM by >20 % vs. prior gen-directly lowering total switching + conduction loss in 100–300 kHz SMPS
Kelvin source connection	Eliminates source inductance impact on gate control loop-prevents false turn-on during high di/dt commutation in bridge-leg configurations
Avalanche energy rating	226 mJ single-pulse capability enables reliable operation without external snubbers in inductive load switching (e.g., welding inverters)
Low C_oss(er)	94 pF minimizes turn-on loss in soft-switching topologies and improves light-load efficiency in resonant converters
High dv/dt immunity	70 V/ns rated slope ensures stable operation during fast voltage transients in high-frequency PFC boost stages

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) units with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 48 V–54 V input, operating at 250 kHz with synchronous rectification on secondary. Use Value: Low R_DS(on) and Q_g reduce thermal footprint and enable >96 % efficiency at full load; Kelvin source prevents gate oscillation during 100 A/μs primary current transitions.	Use Scenario: Output rectification stage in -48 V telecom rectifiers using phase-shifted full-bridge configuration. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals. Use Value: V_SD = 1.2 V and Q_rr = 5.7 μC minimize reverse recovery loss and improve thermal margin over discrete diodes at 20 kHz switching.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 1000 V nominal input, requiring 600 V devices with high surge tolerance. IC Role / Device Role / Timing Role: Boost-stage switch in MPPT circuitry, subjected to repetitive lightning-induced transients and partial shading stress. Use Value: E_AS = 226 mJ and V_DS = 600 V ensure reliable operation during grid fault ride-through without derating; low C_iss = 2650 pF eases gate drive design.	Use Scenario: Inverter leg switching in 7.5 kW HVAC variable-frequency drives with IGBT-like bus voltage (650 V DC link). IC Role / Device Role / Timing Role: High-speed switching element in three-phase inverter bridge, replacing older 600 V Trench MOSFETs. Use Value: R_thJC = 0.48 °C/W enables direct mounting to aluminum heatsink without thermal interface pads; dv/dt = 70 V/ns prevents false triggering during PWM edge transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) units with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 48 V–54 V input, operating at 250 kHz with synchronous rectification on secondary.

Use Value: Low R_DS(on) and Q_g reduce thermal footprint and enable >96 % efficiency at full load; Kelvin source prevents gate oscillation during 100 A/μs primary current transitions.

Use Scenario: Output rectification stage in -48 V telecom rectifiers using phase-shifted full-bridge configuration.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: V_SD = 1.2 V and Q_rr = 5.7 μC minimize reverse recovery loss and improve thermal margin over discrete diodes at 20 kHz switching.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 1000 V nominal input, requiring 600 V devices with high surge tolerance.

IC Role / Device Role / Timing Role: Boost-stage switch in MPPT circuitry, subjected to repetitive lightning-induced transients and partial shading stress.

Use Value: E_AS = 226 mJ and V_DS = 600 V ensure reliable operation during grid fault ride-through without derating; low C_iss = 2650 pF eases gate drive design.

Use Scenario: Inverter leg switching in 7.5 kW HVAC variable-frequency drives with IGBT-like bus voltage (650 V DC link).

IC Role / Device Role / Timing Role: High-speed switching element in three-phase inverter bridge, replacing older 600 V Trench MOSFETs.

Use Value: R_thJC = 0.48 °C/W enables direct mounting to aluminum heatsink without thermal interface pads; dv/dt = 70 V/ns prevents false triggering during PWM edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.062 Ω, Q_g = 65 nC, no Kelvin source, TO-247 package	Larger footprint and higher thermal resistance (R_thJC = 0.85 °C/W); lacks noise-immune gate control	Preferred where through-hole mounting and legacy layout compatibility outweigh surface-mount density and EMI advantages
IXFH60N60X	R_DS(on) = 0.065 Ω, Q_g = 92 nC, TO-247, no Kelvin source, higher C_oss(er) = 130 pF	Higher switching loss and less avalanche ruggedness (E_AS = 180 mJ); unsuitable for high-di/dt PFC stages	Selected when cost sensitivity dominates and gate drive simplicity is prioritized over peak efficiency

Compared with STW62N60M2 and IXFH60N60X, SIHH068N60E-T1-GE3 offers superior power density (PowerPAK 8×8 vs. TO-247), lower gate charge-driven losses, and Kelvin-source stability-making it optimal for space-constrained, high-frequency, high-reliability power conversion where layout-induced noise must be minimized.

Availability

SIHH068N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHH068N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The E Series Power MOSFET product line targets high-efficiency AC/DC and DC/DC conversion systems-including data center PSUs, telecom infrastructure, and renewable energy inverters-where low FOM and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHH068N60E-T1-GE3 at 100 °C case temperature?

The SIHH068N60E-T1-GE3 has a continuous drain current rating of 22 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual board-level thermal performance using the provided R_thJC = 0.48 °C/W and layout-dependent R_thCA.

Does SIHH068N60E-T1-GE3 support gate drive voltages below 10 V?

Yes, SIHH068N60E-T1-GE3 has a gate threshold voltage V_GS(th) of 3.0–5.0 V, allowing operation with 5 V logic-level gate drivers. However, R_DS(on) increases significantly below V_GS = 10 V (e.g., 0.068 Ω max at 10 V vs. >0.12 Ω at 5 V), so full 10 V drive is recommended for minimum conduction loss in high-current applications.

How does the Kelvin source connection in SIHH068N60E-T1-GE3 improve system reliability?

The Kelvin source connection in SIHH068N60E-T1-GE3 isolates the gate driver's source reference from high-current source return paths, eliminating voltage spikes induced by source inductance during fast switching. This prevents unintended gate turn-on (dv/dt-induced shoot-through) in half-bridge and full-bridge topologies, directly enhancing system reliability in high-power SMPS and motor drives.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH068N60E-T1-GE3?

The typical reverse recovery charge Q_rr of the integral body diode in SIHH068N60E-T1-GE3 is 5.7 μC, measured at T_J = 25 °C, I_F = 15 A, di/dt = 100 A/μs, and V_R = 25 V. This low Q_rr reduces switching loss and EMI in synchronous rectification and freewheeling applications compared to standard MOSFETs.

Can SIHH068N60E-T1-GE3 be used in avalanche mode for circuit protection?

Yes, SIHH068N60E-T1-GE3 is fully rated for repetitive unclamped inductive switching with E_AS = 226 mJ (single-pulse, T_J = 25 °C). This avalanche capability enables use in circuits where inductive energy must be safely absorbed-such as relay driving, solenoid control, and fault-tolerant PFC-without external clamping components.

SIHH068N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH068N60E-T1-GE3 FAQ

1.How can I place an order for SIHH068N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH068N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH068N60E-T1-GE3 reliable?

The price and inventory of SIHH068N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH068N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH068N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH068N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH068N60E-T1-GE3?

SIHH068N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH068N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH068N60E-T1-GE3?

For technical support, including SIHH068N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH068N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH068N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH068N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH068N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH068N60E-T1-GE3?

All SIHH068N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH068N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH068N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH068N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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