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Vishay Siliconix SIHH070N60EF-T1GE3
- Part No.:
- SIHH070N60EF-T1GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH070N60EF-T1GE3.pdf
- Description:
- MOSFET N-CH 600V 36A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SIHH070N60EF-T1GE3 from Vishay Siliconix is a 600 V, 36 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency server/telecom SMPS and PFC stages. It features RDS(on) = 0.061 Ω (typ, VGS = 10 V), Qg = 50 nC (typ), and fast body diode (trr = 136 ns, Qrr = 0.9 μC) enabling reduced switching losses in hard-switched and ZVS topologies.
For engineers reviewing the SIHH070N60EF-T1GE3 datasheet, SIHH070N60EF-T1GE3 pinout, SIHH070N60EF-T1GE3 application, or SIHH070N60EF-T1GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), avalanche-rated UIS capability (226 mJ), and Kelvin-source layout for gate drive stability in high-di/dt power conversion designs.
Technical Context
This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology to minimize conduction and switching losses simultaneously. Its dual-source configuration separates power and signal return paths, reducing gate loop inductance and improving turn-off control under high-current transients.
The device integrates an optimized fast-recovery body diode with controlled Qrr and low VSD (1.2 V at 15 A), supporting reliable operation in synchronous rectification and bidirectional energy transfer applications without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports primary-side switching in 400 V DC bus PFC and telecom rectifier designs with 20 % voltage margin. |
| RDS(on) typ | 0.061 Ω @ VGS = 10 V - Enables <1.4 W conduction loss at 15 A continuous drain current (TC = 100 °C). |
| Qg max | 75 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers in 100–300 kHz SMPS. |
| EAS | 226 mJ - Rated unclamped inductive switching energy ensures robustness during transient overloads without derating. |
| trr / Qrr | 136 ns / 0.9 μC - Fast, soft reverse recovery minimizes voltage overshoot and EMI in bridge-leg commutation. |
| RthJC max | 0.62 °C/W - Enables >180 W power dissipation with 30 °C case-to-heat-sink ΔT, supporting high-density thermal design. |
| ID cont | 36 A @ TC = 25 °C - Sustains full-load current in compact heatsink-limited 1–3 kW power supplies. |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate input terminal; connects to gate driver output with minimal trace inductance for stable switching. |
| Pin 2 | Kelvin Source | Dedicated low-inductance source reference for gate driver feedback; decouples power and signal return paths. |
| Pin 3 | Source | Main power source terminal; carries full load current and connects to power ground plane. |
| Pin 4 | Drain | Exposed copper pad on bottom of package; electrically and thermally connected to PCB copper pour for heat dissipation and high-current routing. |
Key Features
| Feature | Design Value |
|---|---|
| 4th-gen E-series silicon | Reduces RDS(on) × Qg FOM by >25 % vs. prior generation, directly lowering total switching + conduction loss. |
| Kelvin source configuration | Eliminates source inductance impact on gate drive loop, preventing oscillation and enabling precise dV/dt control during turn-off. |
| Fast body diode (trr = 136 ns) | Supports zero-voltage switching (ZVS) in LLC resonant converters and reduces dead-time losses in synchronous rectifiers. |
| Avalanche energy rating (EAS = 226 mJ) | Allows operation in unclamped inductive circuits without external snubbers-critical for motor drive and welding inverters. |
| Low Coss(er) = 90 pF | Minimizes capacitive turn-on loss and improves light-load efficiency in high-frequency (>200 kHz) PFC stages. |
Applications
| Server & Telecom SMPS | Industrial PFC Modules |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW 48 V/12 V intermediate bus converters for AI accelerators and 5G baseband units. IC Role / Device Role / Timing Role: High-voltage, high-current switching element operating at 100–250 kHz with tight duty-cycle control. Use Value: Low Qg and Kelvin source enable clean 150 V/ns dV/dt edges and <10 ns jitter in digitally controlled PWM loops. |
Use Scenario: Boost switch in active front-end PFC for industrial UPS and battery energy storage systems (BESS). IC Role / Device Role / Timing Role: Unidirectional high-efficiency power switch handling 30 A RMS input current at 50–70 kHz. Use Value: 226 mJ EAS rating withstands line surge events without failure; 0.061 Ω RDS(on) sustains >98.5 % efficiency at full load. |
| Solar PV Inverters | Motor Drive Inverter Stages |
|
Use Scenario: DC-link switch in string-level MPPT optimizers and microinverters interfacing 600–1000 V PV arrays. IC Role / Device Role / Timing Role: High-voltage switching transistor in interleaved boost or H-bridge configurations. Use Value: 600 V VDS rating supports 1000 V system insulation requirements; fast trr prevents shoot-through during polarity reversal. |
Use Scenario: Half-bridge upper/lower switch in 3–7.5 kW servo and pump inverters with regenerative braking. IC Role / Device Role / Timing Role: Bidirectional power switch managing both motoring and energy recovery via body diode conduction. Use Value: Controlled Qrr = 0.9 μC and low VSD = 1.2 V reduce brake energy loss and thermal stress during frequent direction changes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.055 Ω, no Kelvin source, TO-247 package | Larger footprint and higher gate loop inductance limit usable frequency to ≤150 kHz; better suited for lower-frequency industrial drives. | Select when board space permits TO-247 mounting and gate drive simplicity outweighs high-frequency optimization needs. |
| IXFH60N60X3 | 600 V, 60 A, RDS(on) = 0.052 Ω, TO-247, no fast body diode (trr > 500 ns) | Lacks fast-recovery body diode; requires external anti-parallel SiC Schottky for ZVS or synchronous rectification. | Choose only if discrete diode integration is acceptable and cost-per-watt is prioritized over layout simplicity and EMI reduction. |
Compared with STW62N60M2 and IXFH60N60X3, the SIHH070N60EF-T1GE3 delivers superior high-frequency efficiency via its Kelvin-source layout and integrated fast body diode-enabling smaller magnetics, lower EMI filter cost, and simplified gate drive in space-constrained 200+ kHz PFC and isolated DC/DC designs.
Availability
SIHH070N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHH070N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.
The EF Series targets high-efficiency, high-power-density AC/DC and DC/DC conversion, emphasizing low-loss switching, rugged avalanche capability, and fast body diode performance for next-generation power infrastructure.
FAQ
What is the maximum continuous drain current rating for SIHH070N60EF-T1GE3 at 100 °C case temperature?
The SIHH070N60EF-T1GE3 supports 23 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature ≤150 °C. Derating follows the linear factor of 1.6 W/°C above 25 °C case temperature, ensuring safe operation in high-ambient industrial environments.
Does SIHH070N60EF-T1GE3 have a Kelvin source connection, and how is it implemented physically?
Yes, the SIHH070N60EF-T1GE3 features a dedicated Kelvin source (Pin 2) separate from the main power source (Pin 3). This is implemented via two distinct internal source bond wires routed to separate package terminals, enabling gate driver feedback to reference the true source potential-eliminating voltage drop error caused by high di/dt through the power source path. The physical layout is confirmed in the PowerPAK® 8 × 8 mechanical drawing (Doc #67859).
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH070N60EF-T1GE3, and why does it matter?
The SIHH070N60EF-T1GE3 body diode has a typical Qrr of 0.9 μC at TJ = 25 °C, IF = 15 A, and di/dt = 100 A/μs. This low value directly reduces switching loss and voltage overshoot during hard-commutation events-especially critical in phase-shifted full-bridge and LLC resonant converters where body diode conduction occurs regularly. Lower Qrr also eases EMI filter design by suppressing high-frequency ringing.
Can SIHH070N60EF-T1GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, the SIHH070N60EF-T1GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 226 mJ under standardized test conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 4 A). This rating is validated per JEDEC standards and enables robust operation in motor drive, welding, and flyback converter applications where inductive energy must be safely absorbed without external clamping.
What is the gate threshold voltage range for SIHH070N60EF-T1GE3, and how does it affect drive circuit design?
The SIHH070N60EF-T1GE3 has a gate threshold voltage (VGS(th)) range of 3 V to 5 V at TJ = 25 °C, ID = 250 μA. This relatively narrow window ensures predictable turn-on behavior across temperature and process variation. Designers should apply ≥10 V gate drive to guarantee full enhancement (RDS(on) ≤ 0.071 Ω) and avoid linear-mode operation; the 30 V absolute maximum VGS allows use of standard ±15 V gate drivers with safety margin.
SIHH070N60EF-T1GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 71mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2647 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 202W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH070N60EF-T1GE3 FAQ
1.How can I place an order for SIHH070N60EF-T1GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH070N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH070N60EF-T1GE3 reliable?
The price and inventory of SIHH070N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH070N60EF-T1GE3 is usually 5 days.
3.What payment methods are accepted for SIHH070N60EF-T1GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH070N60EF-T1GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH070N60EF-T1GE3?
SIHH070N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH070N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH070N60EF-T1GE3?
For technical support, including SIHH070N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH070N60EF-T1GE3 requirements.
6.How does Aetrix verify that SIHH070N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH070N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH070N60EF-T1GE3 meets industry standards.
7.What is the process for return or replacement of SIHH070N60EF-T1GE3?
All SIHH070N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH070N60EF-T1GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH070N60EF-T1GE3 part is unused and in its original packaging.
Return procedure for SIHH070N60EF-T1GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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