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Vishay Siliconix SIHH080N60E-T1-GE3
- Part No.:
- SIHH080N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH080N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET POWERPAK 8
- Quantity:
- Payment:
- Shipping:
Inventory:6,049
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Product details
Overview
SIHH080N60E-T1-GE3 from Vishay Siliconix is a 600 V, 32 A (TC = 25 °C), N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features RDS(on) = 0.070 Ω (typ. at VGS = 10 V), Qg = 42 nC (typ.), and avalanche-rated ruggedness (EAS = 226 mJ).
For engineers reviewing the SIHH080N60E-T1-GE3 datasheet, SIHH080N60E-T1-GE3 pinout, SIHH080N60E-T1-GE3 application, or SIHH080N60E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), reduced Co(er) of 79 pF, and Kelvin-source layout enabling precise gate control in high-di/dt hard-switching topologies.
Technical Context
This E-series MOSFET employs 4th-generation trench-gate technology to minimize conduction and switching losses simultaneously. Its dual-source configuration separates power and signal return paths, suppressing common-source inductance and improving gate drive stability during fast transitions.
The device supports operation up to TJ = 150 °C with RthJC = 0.51 °C/W (typ.) and is rated for unclamped inductive switching (UIS) at 226 mJ. Its Coss(er) = 79 pF and Ciss = 2557 pF (at VDS = 100 V) are optimized for ZVS and resonant converter designs requiring predictable energy storage and timing behavior.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus applications with ≥50 % voltage margin for transient spikes in telecom/server PSUs. |
| RDS(on) typ. | 0.070 Ω at VGS = 10 V, ID = 17 A - Enables <1.2 W conduction loss at 17 A, critical for high-current PFC boost stages. |
| Qg typ. | 42 nC - Low gate charge reduces driver power demand and enables efficient operation at 100–300 kHz switching frequencies. |
| EAS | 226 mJ - Confirmed single-pulse avalanche energy rating ensures robustness against inductive turn-off stress without external snubbers. |
| Coss(er) | 79 pF - Energy-related effective output capacitance minimizes turn-off loss and improves ZVS initiation in LLC converters. |
| ID cont. (TC = 100 °C) | 20 A - Sustains continuous current in thermally constrained industrial motor drives or solar inverters with forced-air cooling. |
| RthJC max | 0.68 °C/W - Enables high-power density thermal design with direct heatsink mounting on the drain-exposed backside of PowerPAK 8×8. |
Pinout & Package
SIHH080N60E-T1-GE3 uses the PowerPAK® 8 mm × 8 mm surface-mount package with exposed drain pad (backside thermal path) and four-terminal layout: Pin 1 = Gate, Pin 2 = Kelvin Source, Pin 3 = Power Source, Pin 4 = Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input; routed separately from power loop to minimize Miller coupling in high-di/dt operation. |
| Pin 2 | Kelvin Source | Dedicated low-inductance source reference for gate driver feedback-enables stable threshold control and accurate current sensing. |
| Pin 3 | Power Source | High-current source return path; carries full load current but excluded from gate drive loop to reduce noise coupling. |
| Pin 4 | Drain | Exposed copper pad on package underside-serves as primary thermal interface and high-current drain connection. |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series trench MOSFET | Delivers best-in-class RDS(on) × Qg figure of merit for 600 V class, directly reducing total switching + conduction loss in SMPS. |
| Kelvin source configuration | Eliminates source inductance impact on gate drive, enabling reliable fast switching (>100 V/ns dv/dt) without oscillation or false turn-on. |
| Avalanche energy rated (UIS) | 226 mJ single-pulse rating verified per JEDEC JESD24-1-supports robust operation in hard-switched PFC and flyback converters. |
| Low Coss(er) = 79 pF | Reduces turn-off energy loss and improves soft-switching window in resonant topologies like LLC and phase-shifted full-bridge. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912), suitable for environmentally regulated industrial and telecom systems. |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary-side switching in 3 kW+ 48 V output server PSUs with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-side main switch handling 32 A peak current at 200–300 kHz with tight duty-cycle control. Use Value: Kelvin source and low Qg enable clean 10 ns rise/fall times and <0.5 % gate drive loss, improving overall PSU efficiency by ≥0.4 % at full load. |
Use Scenario: Boost PFC stage in -48 V telecom rectifiers operating continuously at 60 °C ambient. IC Role / Device Role / Timing Role: Fast-recovery boost switch managing 25 A RMS input current with 100 kHz PWM modulation. Use Value: RthJC = 0.51 °C/W and 20 A continuous rating at TC = 100 °C ensure junction temperature stays ≤135 °C under worst-case derating. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: Half-bridge leg switch sustaining 600 V blocking with 17 A average output current. Use Value: 600 V VDS rating and 226 mJ EAS provide margin against lightning-induced transients and allow elimination of external clamps. |
Use Scenario: Inverter output stage in 7.5 kW HVAC drives using space-vector PWM at 16 kHz carrier frequency. IC Role / Device Role / Timing Role: Low-loss IGBT replacement in 3-phase bridge with integrated body diode recovery (trr = 441 ns typ.). Use Value: Low Coss(er) and fast tr/tf reduce switching loss by 35 % vs. legacy 600 V MOSFETs, lowering heatsink size by 40 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.055 Ω, no Kelvin source, TO-247 package | Higher current rating but larger footprint and higher gate charge (Qg = 85 nC); lacks Kelvin source for precision gate control | Preferred where PCB area permits TO-247 and higher peak current is required; not drop-in due to package and pinout mismatch |
| IXFH50N60X3 | 600 V, 50 A, RDS(on) = 0.075 Ω, TO-247, no Kelvin source, lower EAS (140 mJ) | Higher RDS(on) and lower avalanche rating; suited for lower-stress soft-switched applications only | Valid alternative when cost sensitivity outweighs need for Kelvin source or high UIS robustness; requires layout review for thermal and gate drive |
Compared with STW62N60M2 and IXFH50N60X3, SIHH080N60E-T1-GE3 offers superior gate control fidelity via Kelvin source, lower switching loss due to 42 nC Qg, and higher avalanche ruggedness-making it optimal for compact, high-reliability 600 V hard-switched power stages.
Availability
SIHH080N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHH080N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIHH080N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in datacenter, telecom, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIHH080N60E-T1-GE3 at 100 °C case temperature?
The SIHH080N60E-T1-GE3 has a maximum continuous drain current (ID) of 20 A when the case temperature is maintained at 100 °C. This rating is derived from thermal limits and RDS(on) derating curves in the official Vishay datasheet (S23-0654-Rev. C). The SIHH080N60E-T1-GE3 maintains safe operation under sustained load conditions typical in industrial motor drives and solar inverters when properly heatsinked.
Does SIHH080N60E-T1-GE3 support Kelvin source connection, and how is it implemented physically?
Yes, SIHH080N60E-T1-GE3 implements a dedicated Kelvin source connection on Pin 2, separate from the main power source (Pin 3). This layout isolates the gate drive return path from high-current source return, minimizing common-source inductance. The SIHH080N60E-T1-GE3 datasheet confirms this configuration in the "PRODUCT SUMMARY" section and pin assignment diagram, enabling precise gate voltage control in high-di/dt applications.
What is the typical gate charge (Qg) of SIHH080N60E-T1-GE3, and why does it matter for high-frequency operation?
The SIHH080N60E-T1-GE3 has a typical total gate charge (Qg) of 42 nC at VGS = 10 V, VDS = 480 V, and ID = 17 A. This low Qg reduces gate driver power consumption and switching transition time-critical for maintaining efficiency above 100 kHz in LLC resonant converters. The SIHH080N60E-T1-GE3 achieves this while retaining low RDS(on), delivering industry-leading FOM performance.
Is SIHH080N60E-T1-GE3 avalanche-rated, and what is its single-pulse EAS value?
Yes, SIHH080N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (EAS) of 226 mJ under specified test conditions (VDD = 120 V, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A). This rating is explicitly confirmed in the Absolute Maximum Ratings table of the SIHH080N60E-T1-GE3 datasheet and supports robust operation in hard-switched PFC and flyback topologies without external protection.
What package type does SIHH080N60E-T1-GE3 use, and what are its thermal advantages?
SIHH080N60E-T1-GE3 uses the PowerPAK® 8 mm × 8 mm surface-mount package with an exposed drain pad on the bottom side. This design delivers a typical junction-to-case thermal resistance (RthJC) of 0.51 °C/W, enabling efficient heat transfer directly to the PCB copper or external heatsink. The SIHH080N60E-T1-GE3 package supports high-power density layouts while maintaining reliability in thermally demanding applications such as telecom rectifiers and server PSUs.
SIHH080N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2557 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 184W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH080N60E-T1-GE3 FAQ
1.How can I place an order for SIHH080N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH080N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH080N60E-T1-GE3 reliable?
The price and inventory of SIHH080N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH080N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH080N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH080N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH080N60E-T1-GE3?
SIHH080N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH080N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH080N60E-T1-GE3?
For technical support, including SIHH080N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH080N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH080N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH080N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH080N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH080N60E-T1-GE3?
All SIHH080N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH080N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH080N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH080N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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