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Vishay Siliconix SIHH100N60E-T1-GE3
- Part No.:
- SIHH100N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH100N60E-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 28A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:7,424
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Product details
Overview
SIHH100N60E-T1-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency server/telecom SMPS and PFC stages. It features RDS(on) = 0.085 Ω (typ, VGS = 10 V), Qg = 35 nC (typ), and avalanche-rated UIS capability up to 127 mJ.
For engineers reviewing the SIHH100N60E-T1-GE3 datasheet, SIHH100N60E-T1-GE3 pinout, SIHH100N60E-T1-GE3 application, or SIHH100N60E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), reduced gate noise via Kelvin source, and validated performance in 480 V DC-link PFC and hard-switched ZVS topologies.
Technical Context
This E-series MOSFET employs 4th-generation trench-gate technology with optimized cell pitch and charge balancing to achieve low RDS(on) and minimized Co(er) (64 pF). Its Kelvin source terminal isolates power and signal return paths, reducing gate drive loop inductance and suppressing switching-induced gate oscillation.
The device supports high dv/dt operation (100 V/ns at TJ = 125 °C) and integrates an avalanche-rated body diode with trr = 345 ns (typ) and Qrr = 5.0 μC (typ), enabling robust operation in inductive switching and synchronous rectification applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400–480 V DC-link PFC and telecom rectifier outputs without derating. |
| RDS(on) typ @ 10 V | 0.085 Ω - Enables <1.5 W conduction loss at 13.5 A continuous drain current (TC = 100 °C). |
| Qg max | 53 nC - Defines gate drive energy requirement; enables efficient 100–300 kHz switching with standard 1–2 A peak gate drivers. |
| EAS | 127 mJ - Confirmed single-pulse unclamped inductive switching capability at TJ = 25 °C, critical for ZVS/ZCS reliability. |
| RthJC max | 0.72 °C/W - Enables 174 W power dissipation with ≤125 °C case temperature rise, supporting compact heatsink designs. |
| Co(er) | 64 pF - Energy-related output capacitance directly impacts turn-off loss and resonant timing in LLC converters. |
| VGS(th) | 3.0–5.0 V - Ensures robust gate turn-on margin above logic-level thresholds while avoiding spurious turn-on from noise. |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input; connects to gate driver IC output with low-inductance trace routing. |
| Pin 2 | Kelvin Source | Dedicated low-noise source reference for gate driver feedback; must be routed separately from high-current source path. |
| Pin 3 | Source | Main power source terminal; carries full load current (28 A continuous) and connects to PCB ground plane or source node. |
| Pin 4 | Drain | Main power drain terminal; connects to high-voltage DC bus (e.g., 480 V PFC output) with thermal pad soldered to copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series trench MOSFET | Delivers 20 % lower RDS(on) × Qg FOM vs. prior generation, reducing combined conduction + switching losses. |
| Kelvin source connection | Eliminates source inductance impact on gate drive loop, preventing false turn-off during fast dI/dt transitions. |
| Avalanche energy rating (UIS) | 127 mJ single-pulse rating verified per JEDEC JESD24-11, enabling reliable operation under transient overloads. |
| Low effective output capacitance (Co(er)) | 64 pF enables faster voltage transition during turn-off and reduces capacitive switching loss in resonant topologies. |
| Enhanced body diode recovery | trr = 345 ns (typ) and Qrr = 5.0 μC (typ) minimize reverse recovery stress in synchronous rectification and bidirectional switches. |
Applications
| Server & Telecom SMPS | Active PFC Stages |
|---|---|
|
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier operating at 100–200 kHz with 480 V DC output. IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched power switch handling full line-frequency and switching transients. Use Value: Low RDS(on) and Kelvin source reduce conduction loss and gate ringing, improving efficiency >96 % and enabling 20 % smaller magnetics. |
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 1U server PSU. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing 12 A RMS input current at 65 kHz. Use Value: Low Qgd/Qg ratio (13/35 nC) improves voltage-dependent switching speed, reducing crossover loss by 18 % vs. legacy 600 V MOSFETs. |
| Solar PV Inverters | Industrial Motor Drives |
|
Use Scenario: DC-link switch in string-level MPPT converter with 1000 V system voltage and 15 A output. IC Role / Device Role / Timing Role: High-reliability, high-temperature (TJ = 150 °C) switch subjected to solar irradiance cycling and grid fault transients. Use Value: 150 °C TJ rating and 127 mJ UIS support 20-year field life in outdoor environments without derating. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with 400 V AC input and 10 kHz PWM. IC Role / Device Role / Timing Role: High-dI/dt (120 A/μs) capable switch managing motor regenerative energy and short-circuit events. Use Value: Robust body diode with IRM = 24 A and controlled Qrr prevents shoot-through failure during commutation in 3-phase bridge configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(on) = 0.075 Ω (lower), Qg = 65 nC (higher), no Kelvin source, TO-247 package. | Larger footprint, higher gate drive loss, unsuitable for ultra-low-noise gate loops. | Prefer SIHH100N60E-T1-GE3 when board space, EMI, or gate drive simplicity is prioritized over minimal RDS(on) gain. |
| IXFH50N60X3 | RDS(on) = 0.115 Ω (higher), Qg = 42 nC, TO-247, no Kelvin source, higher RthJC (0.95 °C/W). | Lower power density, less efficient at high frequency, requires larger heatsink. | Choose SIHH100N60E-T1-GE3 for new designs targeting >150 kHz operation and thermal-constrained layouts. |
Compared with STW62N60M2 and IXFH50N60X3, SIHH100N60E-T1-GE3 delivers superior switching efficiency per unit area due to its Kelvin source, lower Co(er), and 0.72 °C/W thermal resistance - making it optimal for high-density, high-reliability power conversion where layout-induced gate noise and thermal management are critical.
Availability
SIHH100N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHH100N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIHH100N60E-T1-GE3 belongs to Vishay's E-series Power MOSFET product line, engineered specifically for high-frequency, high-efficiency AC/DC and DC/DC conversion in datacenter, telecom, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIHH100N60E-T1-GE3 at 100 °C case temperature?
The SIHH100N60E-T1-GE3 supports 18 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (≥10 cm² 2 oz Cu) and forced-air cooling. At TC = 25 °C, the rating increases to 28 A, with linear derating applied between temperatures using the 1.38 W/°C factor.
Does SIHH100N60E-T1-GE3 include a Kelvin source connection, and how must it be implemented?
Yes, SIHH100N60E-T1-GE3 features a dedicated Kelvin source (Pin 2) separate from the main source terminal (Pin 3). Pin 2 must connect directly to the gate driver's source reference (e.g., driver IC ground pin), while Pin 3 carries all load current. Routing Pin 2 independently avoids coupling high di/dt noise into the gate control loop - a mandatory practice to prevent false turn-off.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH100N60E-T1-GE3, and why does it matter?
The SIHH100N60E-T1-GE3 body diode has a typical Qrr of 5.0 μC at TJ = 25 °C, IS = 13.5 A, and di/dt = 100 A/μs. This value directly determines switching loss and voltage overshoot during hard-commutation events. Lower Qrr reduces EMI and stress on snubbers, making SIHH100N60E-T1-GE3 especially suitable for synchronous rectification and bidirectional topologies.
Can SIHH100N60E-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SIHH100N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (EAS) of 127 mJ at TJ = 25 °C. This rating is validated per JEDEC JESD24-11 and allows safe operation during transient overloads such as output short circuits or inductive kickback in motor drives and welding equipment.
What is the thermal resistance from junction to case (RthJC) for SIHH100N60E-T1-GE3, and how does it affect heatsink design?
The maximum junction-to-case thermal resistance (RthJC) for SIHH100N60E-T1-GE3 is 0.72 °C/W. With a 174 W maximum power dissipation, this implies a maximum allowable temperature rise of 125 °C from junction to case. Designers can therefore size heatsinks assuming ΔT = (RthJC + RthCA) × PD, where RthCA is heatsink-to-ambient resistance - enabling compact thermal solutions versus TO-247 alternatives.
SIHH100N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1850 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH100N60E-T1-GE3 FAQ
1.How can I place an order for SIHH100N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH100N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH100N60E-T1-GE3 reliable?
The price and inventory of SIHH100N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH100N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH100N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH100N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH100N60E-T1-GE3?
SIHH100N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH100N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH100N60E-T1-GE3?
For technical support, including SIHH100N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH100N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH100N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH100N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH100N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH100N60E-T1-GE3?
All SIHH100N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH100N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH100N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH100N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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