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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH105N60EF-T1GE3

Name: SIHH105N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHH105N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH105N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH105N60EF-T1GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHH105N60EF-T1GE3 from Vishay Siliconix is a 600 V, 26 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.091 Ω (typ. at V_GS = 10 V), Q_g = 33 nC (typ.), and avalanche-rated UIS capability up to 127 mJ - enabling robust operation in hard-switched telecom and server power converters.

For engineers reviewing the SIHH105N60EF-T1GE3 datasheet, SIHH105N60EF-T1GE3 pinout, SIHH105N60EF-T1GE3 application, or SIHH105N60EF-T1GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), fast body diode (t_rr = 126 ns typ.), Kelvin source for gate noise immunity, and 600 V V_DS rating suitable for 400 V DC bus systems.

Technical Context

This EF-series MOSFET employs 4th-generation E-series silicon technology with reduced effective output capacitance (C_oss(er) = 65 pF) and low C_iss (2099 pF), minimizing switching losses in high-frequency PFC and LLC resonant topologies. Its Kelvin source terminal separates power and signal return paths to suppress gate ringing under high di/dt conditions.

The device supports repetitive operation up to T_J = 150 °C with R_thJC = 0.55 °C/W (typ.), enabling high-power density designs. Its body diode exhibits V_SD = 1.2 V (at I_S = 13 A, T_J = 25 °C) and controlled reverse recovery (Q_rr = 0.6 μC typ.), reducing commutation loss and EMI in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with ≥50 % voltage margin for transient overvoltage handling
R_DS(on) typ. @ 10 V	0.091 Ω - enables <2.5 W conduction loss at 13 A continuous drain current
Q_g max	50 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS
E_AS single-pulse	127 mJ - ensures ruggedness during unclamped inductive switching events without failure
C_oss(er)	65 pF - reduces turn-off energy loss and improves light-load efficiency in ZVS/ZCS circuits
t_rr typ.	126 ns - limits diode reverse recovery overshoot and associated voltage spikes in half-bridge legs
R_thJC typ.	0.55 °C/W - allows >150 W power dissipation with moderate heatsinking in compact 8 mm × 8 mm footprint

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; connects to driver IC output with low-inductance trace for fast switching
Pin 2	Kelvin Source	Dedicated low-current source reference for gate driver feedback - isolates gate loop from high di/dt power return path
Pin 3	Source	Main power source terminal; carries full load current and connects to PCB power plane or thermal pad
Pin 4	Drain	Main power drain terminal; electrically and thermally connected to large copper area for heat extraction

Key Features

Feature	Design Value
4th-gen E-series silicon	Delivers 20 % lower R_DS(on) × Q_g FOM vs. prior generation, directly improving efficiency in 300–500 kHz PFC
Kelvin source connection	Eliminates gate drive error caused by source inductance during high-speed switching, stabilizing V_GS waveform
Avalanche energy rated (UIS)	Withstands 127 mJ single-pulse avalanche stress without parameter shift - critical for reliability in overload conditions
Fast body diode (t_rr = 126 ns)	Reduces reverse recovery charge (Q_rr = 0.6 μC) and associated voltage overshoot in synchronous rectification and bridge legs
Low C_oss(er) (65 pF)	Minimizes turn-off loss and enables higher frequency operation while maintaining ZVS capability in resonant converters

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 200–300 kHz with synchronous rectification on secondary side. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; Kelvin source prevents false turn-on during high di/dt transitions.	Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency target. IC Role / Device Role / Timing Role: Fast-switching boost switch requiring low Q_rr and stable gate drive under high ambient temperature (70 °C). Use Value: Fast body diode and low C_oss(er) minimize dead-time losses; 150 °C T_J rating sustains performance at elevated case temperatures.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverter's DC/AC H-bridge stage interfacing 600–1000 V PV array. IC Role / Device Role / Timing Role: Half-bridge leg switch operating with 16 kHz PWM and active short-circuit protection. Use Value: 600 V V_DS rating provides margin above 1000 V DC-link transients; UIS rating ensures fault tolerance during grid faults.	Use Scenario: Inverter output stage in 7.5 kW industrial VFD driving 3-phase induction motor at variable speed. IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter leg, switching at ≤10 kHz with high peak current demands. Use Value: 59 A pulsed drain current (I_DM) and low R_DS(on) support high torque bursts; robust body diode handles regenerative energy.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 200–300 kHz with synchronous rectification on secondary side.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; Kelvin source prevents false turn-on during high di/dt transitions.

Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency target.

IC Role / Device Role / Timing Role: Fast-switching boost switch requiring low Q_rr and stable gate drive under high ambient temperature (70 °C).

Use Value: Fast body diode and low C_oss(er) minimize dead-time losses; 150 °C T_J rating sustains performance at elevated case temperatures.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverter's DC/AC H-bridge stage interfacing 600–1000 V PV array.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating with 16 kHz PWM and active short-circuit protection.

Use Value: 600 V V_DS rating provides margin above 1000 V DC-link transients; UIS rating ensures fault tolerance during grid faults.

Use Scenario: Inverter output stage in 7.5 kW industrial VFD driving 3-phase induction motor at variable speed.

IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter leg, switching at ≤10 kHz with high peak current demands.

Use Value: 59 A pulsed drain current (I_DM) and low R_DS(on) support high torque bursts; robust body diode handles regenerative energy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 58 A, R_DS(on) = 0.065 Ω, no Kelvin source, TO-247 package	Larger footprint, higher thermal resistance (R_thJC = 0.5 °C/W), no gate noise immunity	Preferred where board space permits and gate drive layout minimizes noise; not drop-in due to package and pinout mismatch
IXFH50N60X	600 V, 50 A, R_DS(on) = 0.085 Ω, TO-247, standard 3-pin configuration	No Kelvin source, higher Q_g (72 nC), slower t_rr (220 ns), larger thermal mass	Suitable for lower-frequency (<100 kHz) industrial drives; requires gate drive redesign and layout revision vs. SIHH105N60EF-T1GE3

Compared with STW62N60M2 and IXFH50N60X, SIHH105N60EF-T1GE3 offers superior high-frequency efficiency via Kelvin source and lower C_oss(er), but requires matching PowerPAK® 8 × 8 footprint and gate driver decoupling optimization - making it optimal for space-constrained, high-density telecom and server power designs.

Availability

SIHH105N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH105N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The EF Series - including SIHH105N60EF-T1GE3 - was designed specifically for high-frequency, high-efficiency power conversion in server, telecom, and renewable energy systems, prioritizing low switching loss, avalanche ruggedness, and gate drive stability.

FAQ

What is the maximum continuous drain current rating for SIHH105N60EF-T1GE3 at 100 °C case temperature?

The SIHH105N60EF-T1GE3 has a continuous drain current (I_D) rating of 17 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 26 A rating at T_C = 25 °C and must be used with verified thermal design to maintain junction temperature ≤150 °C. The SIHH105N60EF-T1GE3 datasheet confirms this limit applies under steady-state conduction with proper heatsinking.

Does SIHH105N60EF-T1GE3 support gate drive voltages below 10 V?

Yes - SIHH105N60EF-T1GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, allowing operation with 5 V logic-level gate drivers. However, R_DS(on) increases significantly below V_GS = 10 V (e.g., 0.135 Ω typ. at V_GS = 6 V), so full enhancement at 10 V is recommended for minimum conduction loss. The SIHH105N60EF-T1GE3 is not classified as a logic-level MOSFET but remains compatible with 5 V microcontroller outputs in low-duty-cycle applications.

How does the Kelvin source connection in SIHH105N60EF-T1GE3 improve system reliability?

The Kelvin source (Pin 2) in SIHH105N60EF-T1GE3 provides a dedicated low-current reference for the gate driver's source node, eliminating voltage drop errors caused by high di/dt through the main source path (Pin 3). This prevents unintended gate turn-off during fast switching and suppresses oscillation in high-frequency PFC stages. The SIHH105N60EF-T1GE3 leverages this feature to maintain clean V_GS waveforms even under 100 A/μs current transients, directly enhancing system EMI performance and gate driver stability.

What is the typical reverse recovery charge (Q_rr) of SIHH105N60EF-T1GE3, and why does it matter in bridge configurations?

The SIHH105N60EF-T1GE3 has a typical reverse recovery charge (Q_rr) of 0.6 μC at T_J = 25 °C, IS = 13 A, and di/dt = 100 A/μs. In half-bridge or full-bridge topologies, low Q_rr reduces the energy dissipated during body diode commutation, lowering switching loss and voltage overshoot across the freewheeling device. This directly improves efficiency and reliability in hard-switched converters - a key advantage of the SIHH105N60EF-T1GE3 over standard MOSFETs with Q_rr > 1.5 μC.

Is SIHH105N60EF-T1GE3 suitable for use in automotive on-board chargers (OBC)?

The SIHH105N60EF-T1GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical OBC applications without additional qualification testing. While its 600 V rating, 150 °C T_J capability, and UIS ruggedness align with OBC requirements, Vishay does not list SIHH105N60EF-T1GE3 in its automotive-grade product portfolio. For production automotive use, engineers should select AEC-Q101-certified alternatives - the SIHH105N60EF-T1GE3 remains appropriate for industrial and computing power systems per its documented specifications.

SIHH105N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2099 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 174W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH105N60EF-T1GE3 FAQ

1.How can I place an order for SIHH105N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH105N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH105N60EF-T1GE3 reliable?

The price and inventory of SIHH105N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH105N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHH105N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH105N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH105N60EF-T1GE3?

SIHH105N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH105N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH105N60EF-T1GE3?

For technical support, including SIHH105N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH105N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHH105N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH105N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH105N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHH105N60EF-T1GE3?

All SIHH105N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH105N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH105N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHH105N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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