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Vishay Siliconix SIHH11N60EF-T1-GE3
- Part No.:
- SIHH11N60EF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH11N60EF-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 11A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:1,405
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Product details
Overview
SIHH11N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 11 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies. It features 0.310 Ω RDS(on) at VGS = 10 V, 31 nC total gate charge, and fast body diode with 114 ns typical reverse recovery time (trr).
For engineers reviewing the SIHH11N60EF-T1-GE3 datasheet, SIHH11N60EF-T1-GE3 pinout, SIHH11N60EF-T1-GE3 application, or SIHH11N60EF-T1-GE3 equivalent, key selection criteria include its low Qrr (0.56 μC), avalanche-rated UIS capability (127 mJ), Kelvin-source layout for gate drive stability, and 600 V VDS rating suitable for 400 V DC bus systems.
Technical Context
This EF-series MOSFET uses Vishay's fast-body-diode E technology to reduce reverse recovery charge (Qrr) and peak reverse recovery current (IRRM = 9.5 A), enabling higher-frequency operation in hard-switched PFC and resonant LLC topologies. Its Kelvin source (Pin 2) separates power and signal return paths to minimize gate loop inductance and suppress oscillation during fast switching.
The device integrates an ultra-low input capacitance (Ciss = 1078 pF) and low gate-drain charge (Qgd = 13 nC), resulting in reduced Miller effect and improved controllability under high dV/dt conditions (70 V/ns). Thermal resistance RthJC is 0.76 °C/W, supporting high-power-density designs when mounted on copper-clad PCBs with thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus with 50 % safety margin in industrial and telecom PFC stages |
| RDS(on) typ @ 10 V | 0.310 Ω - enables <1.9 W conduction loss at 5.5 A continuous drain current |
| Qg max | 62 nC - allows efficient gate driving with standard 1–2 A peak drivers at 100–300 kHz |
| trr typ | 114 ns - reduces diode switching losses and EMI in discontinuous conduction mode (DCM) PFC |
| EAS | 127 mJ - rated unclamped inductive switching energy ensures robustness against transient overloads |
| RthJC | 0.76 °C/W - enables >100 W dissipation with moderate heatsinking in PowerPAK 8×8 footprint |
| ID cont @ TC = 100 °C | 7 A - defines usable current limit in thermally constrained board-level applications |
Pinout & Package
PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for thermal and electrical connection, dual-source configuration with Kelvin sense terminal, and RoHS-compliant, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires low-inductance routing to minimize ringing during 10–32 ns turn-on delay |
| Pin 2 | Kelvin Source | Low-current signal reference for gate driver feedback; must be routed separately from power source to avoid ground bounce |
| Pin 3 | Source (Power) | Main current return path; connects directly to PCB ground plane and thermal pad via multiple vias |
| Pin 4 | Drain | High-voltage power output node; soldered to large copper area for thermal conduction and voltage standoff |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode (EF series) | Reduces Qrr by >50 % vs. standard superjunction MOSFETs, lowering diode switching loss and EMI in PFC boost stages |
| Kelvin source connection | Enables accurate gate drive referencing independent of high di/dt source path, improving switching consistency and noise immunity |
| Low Ciss / Coss ratio | 1078 pF / 57 pF = ~18.9 - improves hard-switching efficiency and reduces Miller-induced false turn-on risk |
| Avalanche energy rating | 127 mJ single-pulse UIS - eliminates need for external snubbers in inductive load transients common in motor drives and welders |
| Lead (Pb)-free & halogen-free | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU without derating |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Boost converter operating at 100–200 kHz in 48 V / 3 kW telecom rectifier with active PFC. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) PFC; handles 11 A RMS input current with 600 V blocking. Use Value: Low Qrr (0.56 μC) and fast trr (114 ns) minimize body diode losses during zero-current switching transitions, improving full-load efficiency by ≥0.4 %. |
Use Scenario: High-density 1U server PSU with interleaved dual-phase PFC delivering 1.5 kW at 96 % efficiency. IC Role / Device Role / Timing Role: Primary switch in each phase; operated with synchronous rectification and digital PWM control. Use Value: Kelvin source pin enables stable gate drive under 100 A/μs di/dt, preventing shoot-through and maintaining tight current balance between phases. |
| Solar PV Inverter DC-DC Stage | Industrial Battery Charger |
|
Use Scenario: Isolated DC-DC stage in string-type solar inverter converting 600–1000 V DC input to 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; subjected to repetitive 600 V VDS stress and 150 °C junction temperature. Use Value: 150 °C max TJ rating and 127 mJ EAS ensure reliable operation during grid faults and lightning-induced surges without derating. |
Use Scenario: 3 kW Li-ion battery charger for EV infrastructure using two-phase interleaved PFC + LLC resonant DC-DC. IC Role / Device Role / Timing Role: PFC switch handling 11 A average current at 150 kHz; subject to frequent cold-start and overload events. Use Value: Low RDS(on) (0.310 Ω) limits conduction loss to <2.0 W at full load, reducing thermal stress on compact heatsinks and extending electrolytic capacitor life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V, 48 A, RDS(on) = 0.065 Ω, no Kelvin source, TO-247 package, Qrr = 1.2 μC | Higher current rating but larger footprint and slower body diode; suited for lower-frequency, higher-power designs | Choose STW48N60M2 only if board space permits TO-247 and system operates below 100 kHz with relaxed EMI targets |
| IXFH30N60X | 600 V, 30 A, RDS(on) = 0.135 Ω, TO-247, Qrr = 0.85 μC, no Kelvin source | Higher current and lower RDS(on), but lacks Kelvin sensing and has 1.5× higher Qrr; requires external gate resistor tuning | Select IXFH30N60X when thermal headroom exists and design prioritizes conduction loss over switching loss and layout simplicity |
Compared with STW48N60M2 and IXFH30N60X, SIHH11N60EF-T1-GE3 delivers superior high-frequency PFC performance due to its Kelvin source, lower Qrr, and compact PowerPAK 8×8 footprint-enabling smaller magnetics, reduced EMI filtering, and higher power density without sacrificing ruggedness.
Availability
SIHH11N60EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHH11N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The EF series, including SIHH11N60EF-T1-GE3, was engineered specifically for high-frequency, high-efficiency AC-DC conversion in datacenter, telecom, and renewable energy systems where fast body diode behavior and thermal performance are critical.
FAQ
What is the maximum continuous drain current for SIHH11N60EF-T1-GE3 at 100 °C case temperature?
The SIHH11N60EF-T1-GE3 supports 7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 11 A rating at 25 °C and must be validated with actual board-level thermal design using the 0.76 °C/W RthJC parameter. SIHH11N60EF-T1-GE3 maintains safe operation up to 150 °C junction temperature under these conditions.
Does SIHH11N60EF-T1-GE3 have a Kelvin source, and how is it implemented in the PowerPAK 8×8 package?
Yes, SIHH11N60EF-T1-GE3 includes a dedicated Kelvin source terminal (Pin 2) separate from the main power source (Pin 3). In the PowerPAK 8×8 package, Pin 2 is a small-signal bond finger located adjacent to the gate pad, electrically isolated from high-current return paths. This allows gate driver feedback to reference true source potential, minimizing voltage overshoot during fast switching. SIHH11N60EF-T1-GE3 requires separate PCB traces for Pin 2 and Pin 3 to realize this benefit.
What is the typical reverse recovery charge (Qrr) of SIHH11N60EF-T1-GE3, and why does it matter in PFC designs?
The SIHH11N60EF-T1-GE3 has a typical Qrr of 0.56 μC at TJ = 25 °C, IF = 5.5 A, dI/dt = 100 A/μs, and VR = 25 V. This low Qrr directly reduces switching losses and electromagnetic interference in boost PFC circuits, especially during zero-current switching transitions. SIHH11N60EF-T1-GE3 achieves this via EF-series fast-body-diode process optimization, making it preferable over standard superjunction MOSFETs in 100–300 kHz PFC stages.
Can SIHH11N60EF-T1-GE3 replace standard 600 V superjunction MOSFETs in existing PFC layouts without modification?
No-SIHH11N60EF-T1-GE3 requires layout adaptation due to its Kelvin source (Pin 2), which must be routed separately from the main source (Pin 3) to avoid negating its noise-immunity benefit. While the PowerPAK 8×8 footprint matches standard 8×8 packages, SIHH11N60EF-T1-GE3 demands updated gate driver grounding, separate Kelvin trace, and verification of gate loop inductance. Direct drop-in replacement is not supported without schematic and layout review.
What is the avalanche energy rating (EAS) of SIHH11N60EF-T1-GE3, and under what test conditions is it guaranteed?
The SIHH11N60EF-T1-GE3 is rated for 127 mJ single-pulse avalanche energy (EAS) under conditions defined in Note b: VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 3 A. This rating confirms ruggedness against inductive switching transients in motor drives, welders, and PFC circuits with poor input filtering. SIHH11N60EF-T1-GE3 maintains this rating across its full operating temperature range without derating.
SIHH11N60EF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 357mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1078 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 114W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH11N60EF-T1-GE3 FAQ
1.How can I place an order for SIHH11N60EF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH11N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH11N60EF-T1-GE3 reliable?
The price and inventory of SIHH11N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH11N60EF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH11N60EF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH11N60EF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH11N60EF-T1-GE3?
SIHH11N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH11N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH11N60EF-T1-GE3?
For technical support, including SIHH11N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH11N60EF-T1-GE3 requirements.
6.How does Aetrix verify that SIHH11N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH11N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH11N60EF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH11N60EF-T1-GE3?
All SIHH11N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH11N60EF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH11N60EF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH11N60EF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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