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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH11N60E-T1-GE3

Name: SIHH11N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH11N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH11N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH11N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 11A PPAK 8 X 8

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Product details

Overview

SIHH11N60E-T1-GE3 from Vishay Siliconix is a 600 V, 11 A N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.295 Ω (typ.) at V_GS = 10 V, Q_g = 31 nC (typ.), and E_AS = 127 mJ, enabling reduced conduction and switching losses in telecom and server power designs.

For engineers reviewing the SIHH11N60E-T1-GE3 datasheet, SIHH11N60E-T1-GE3 pinout, SIHH11N60E-T1-GE3 application, or SIHH11N60E-T1-GE3 equivalent, key selection criteria include its Kelvin-source–enabled gate drive noise immunity, ultra-low Q_g/C_iss ratio, avalanche-rated ruggedness, and thermal performance with R_thJC = 0.76 °C/W - critical for high-density, high-reliability 600 V power conversion.

Technical Context

This device employs a trench-gate, superjunction structure to achieve high voltage blocking (600 V) while maintaining low R_DS(on) × Q_g figure-of-merit. Its Kelvin source configuration separates power and signal return paths, minimizing gate loop inductance and suppressing oscillation during fast switching.

It supports hard-switched topologies up to 480 V bus voltage with dV/dt capability of 70 V/ns (T_J = 125 °C) and features an integral body diode with t_rr = 280 ns (typ.) and Q_rr = 3.0 μC (typ.) - suitable for continuous conduction mode (CCM) PFC and ZVS-assisted LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage in telecom/server SMPS
R_DS(on) typ. @ 10 V	0.295 Ω - enables ≤ 1.8 W conduction loss at 5.5 A RMS in PFC boost stage at T_C = 100 °C
Q_g typ.	31 nC - reduces gate driver power demand and allows use of lower-cost 1-A peak drivers in high-frequency (>100 kHz) operation
E_AS	127 mJ - withstands unclamped inductive energy events without failure, supporting robust design in flyback or forward converters
R_thJC max	1.10 °C/W - enables >100 W power dissipation with <115 °C junction rise above 25 °C case temperature under forced air cooling
C_iss	1076 pF - low input capacitance improves gate drive efficiency and reduces Miller-induced turn-on risk in half-bridge configurations
V_GS(th)	2.0–4.0 V - standard threshold ensures reliable turn-on with 10 V gate drive while avoiding accidental activation from noise

Pinout & Package

SIHH11N60E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for low thermal resistance and four-terminal Kelvin source configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control terminal; connects to gate driver output with minimal trace inductance
Pin 2	Kelvin Source	Dedicated low-inductance source reference for gate driver feedback - isolates power source return from gate sensing path
Pin 3	Source	Main power source terminal; carries full load current and connects to PCB ground plane or source node
Pin 4	Drain	Main power drain terminal; soldered to large copper area for heat dissipation and high-current routing to bus rail

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return path from power source current path, reducing gate ringing and improving switching stability at >300 kHz
Avalanche energy rated (UIS)	127 mJ single-pulse rating enables reliable operation in inductive load switching without external snubbers
Low R_DS(on) × Q_g FOM	9.15 Ω·nC (0.295 Ω × 31 nC) - balances conduction and switching loss for optimal efficiency in 65–300 kHz PFC and LLC designs
Lead (Pb)-free & Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709E - compliant for industrial, telecom, and renewable energy applications
Ultra-low C_iss and Q_gd	1076 pF C_iss, 13 nC Q_gd - minimizes Miller effect, enabling clean turn-off and reduced gate drive losses

Applications

Server Power Supply	Telecom Rectifier Module
Use Scenario: Primary-side switch in active clamp forward or asymmetrical half-bridge converter operating at 200–300 kHz with 54 V output. IC Role / Device Role / Timing Role: High-voltage power switch handling 12–15 A peak drain current and 400 V DC bus. Use Value: Kelvin source and low Q_g enable stable gate control and <1.5% efficiency gain over non-Kelvin 600 V MOSFETs at full load.	Use Scenario: Boost PFC switch in 3 kW telecom rectifier with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 65–100 kHz with 11 A RMS current. Use Value: 0.295 Ω R_DS(on) and 127 mJ E_AS reduce thermal stress and eliminate need for external avalanche protection.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter with 1000 V DC input and 400 V DC output. IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage, switching at 80 kHz with 5.5 A average current. Use Value: 600 V rating and 70 V/ns dV/dt capability ensure reliable operation during fast voltage transients in solar array fault conditions.	Use Scenario: Inverter leg switch in 5.5 kW variable frequency drive feeding 3-phase induction motor. IC Role / Device Role / Timing Role: 600 V bridge arm switch conducting 11 A RMS with 27 A pulsed current capability. Use Value: Low R_thJC (0.76 °C/W) and Kelvin source allow direct mounting on heatsink with <10 K/W total thermal path for compact thermal design.

Server Power Supply

Telecom Rectifier Module

Use Scenario: Primary-side switch in active clamp forward or asymmetrical half-bridge converter operating at 200–300 kHz with 54 V output.

IC Role / Device Role / Timing Role: High-voltage power switch handling 12–15 A peak drain current and 400 V DC bus.

Use Value: Kelvin source and low Q_g enable stable gate control and <1.5% efficiency gain over non-Kelvin 600 V MOSFETs at full load.

Use Scenario: Boost PFC switch in 3 kW telecom rectifier with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 65–100 kHz with 11 A RMS current.

Use Value: 0.295 Ω R_DS(on) and 127 mJ E_AS reduce thermal stress and eliminate need for external avalanche protection.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter with 1000 V DC input and 400 V DC output.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage, switching at 80 kHz with 5.5 A average current.

Use Value: 600 V rating and 70 V/ns dV/dt capability ensure reliable operation during fast voltage transients in solar array fault conditions.

Use Scenario: Inverter leg switch in 5.5 kW variable frequency drive feeding 3-phase induction motor.

IC Role / Device Role / Timing Role: 600 V bridge arm switch conducting 11 A RMS with 27 A pulsed current capability.

Use Value: Low R_thJC (0.76 °C/W) and Kelvin source allow direct mounting on heatsink with <10 K/W total thermal path for compact thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2	600 V, 38 A, R_DS(on) = 0.085 Ω, no Kelvin source, TO-247 package	Higher current rating but larger footprint and higher gate charge (75 nC); lacks Kelvin source for noise-sensitive layouts	Preferred where higher current headroom is needed and board space allows TO-247; not drop-in due to package and pinout mismatch
IXFH30N60X	600 V, 30 A, R_DS(on) = 0.135 Ω, TO-247, no Kelvin source, higher Q_g (95 nC)	Higher conduction efficiency but significantly higher switching loss and no integrated noise mitigation	Selected when maximum current density is prioritized over EMI control; requires redesigned gate layout and driver sizing

Compared with STW38N60M2 and IXFH30N60X, SIHH11N60E-T1-GE3 trades absolute current rating for superior gate control fidelity, thermal efficiency per unit area, and surface-mount manufacturability - making it optimal for space-constrained, high-frequency, low-noise 600 V power stages.

Availability

SIHH11N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH11N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIHH11N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-frequency switch-mode power conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHH11N60E-T1-GE3 at 100 °C case temperature?

The SIHH11N60E-T1-GE3 has a continuous drain current rating of 7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 11 A rating at T_C = 25 °C, based on a linear derating factor of 0.9 W/°C and R_thJC = 0.76 °C/W. Designers must verify junction temperature using actual board layout and airflow conditions before finalizing thermal design for SIHH11N60E-T1-GE3.

Does SIHH11N60E-T1-GE3 support logic-level gate drive?

No, SIHH11N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may turn on partially with 5 V drive, full enhancement and guaranteed low R_DS(on) require ≥10 V gate-source voltage. For logic-level compatibility, consider Vishay's SiHx21N60EF series instead of SIHH11N60E-T1-GE3.

How does the Kelvin source connection in SIHH11N60E-T1-GE3 improve switching performance?

The Kelvin source connection in SIHH11N60E-T1-GE3 separates the high-current source return path (Pin 3) from the gate driver's source reference (Pin 2), eliminating voltage drop-induced gate drive errors during high dI/dt transitions. This prevents false turn-on caused by source inductance and improves timing accuracy and waveform fidelity - especially critical in high-frequency, high-power half-bridge and synchronous rectifier applications using SIHH11N60E-T1-GE3.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH11N60E-T1-GE3?

The typical reverse recovery charge Q_rr of the integral body diode in SIHH11N60E-T1-GE3 is 3.0 μC, measured at T_J = 25 °C, I_F = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and directly impacts commutation loss in synchronous rectification and bidirectional topologies using SIHH11N60E-T1-GE3.

Is SIHH11N60E-T1-GE3 suitable for use in avalanche mode during normal operation?

SIHH11N60E-T1-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 127 mJ, but it is not intended for repetitive avalanche operation. The datasheet specifies this as a ruggedness rating - not a recommended operating mode. Repeated avalanche stress accelerates degradation and is outside the guaranteed safe operating area. Designers should implement proper clamping or snubbing to avoid relying on avalanche capability during routine operation of SIHH11N60E-T1-GE3.

SIHH11N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 339mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1076 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH11N60E-T1-GE3 FAQ

1.How can I place an order for SIHH11N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH11N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH11N60E-T1-GE3 reliable?

The price and inventory of SIHH11N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH11N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH11N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH11N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH11N60E-T1-GE3?

SIHH11N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH11N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH11N60E-T1-GE3?

For technical support, including SIHH11N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH11N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH11N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH11N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH11N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH11N60E-T1-GE3?

All SIHH11N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH11N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH11N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH11N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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