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Vishay Siliconix SIHH11N65EF-T1-GE3
- Part No.:
- SIHH11N65EF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH11N65EF-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 11A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:9,010
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Product details
Overview
SIHH11N65EF-T1-GE3 from Vishay Siliconix is a 650 V, 11 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, ultra-low gate charge (Qg = 35 nC typ.), fast body diode (trr = 108 ns typ.), and avalanche-rated (EAS = 127 mJ) for high-efficiency hard-switched PFC and SMPS stages in telecom rectifiers.
For engineers reviewing the SIHH11N65EF-T1-GE3 datasheet, SIHH11N65EF-T1-GE3 pinout, SIHH11N65EF-T1-GE3 application, or SIHH11N65EF-T1-GE3 equivalent, key selection criteria include its 0.332 Ω RDS(on) at 10 V, 70 V/ns dV/dt immunity, Kelvin-source noise suppression, and 130 W PD rating in compact surface-mount form.
Technical Context
This E-series MOSFET employs trench-gate silicon technology optimized for high-voltage switching with minimized figure-of-merit (RDS(on) × Qg = 11.6 nΩ·F). Its Kelvin source terminal separates power and signal return paths to suppress gate oscillation during fast dI/dt transitions up to 100 A/μs.
The device integrates an ultra-fast intrinsic body diode (Qrr = 0.5 μC typ., VSD = 0.9 V at 6 A) and is fully rated for unclamped inductive switching (UIS) under repetitive conditions-critical for boost PFC and LLC resonant converter primary-side switches operating above 400 V DC bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400–450 V AC-input PFC stages with 20 % margin over 520 V DC bus |
| RDS(on) typ. | 0.332 Ω at VGS = 10 V, ID = 6 A - enables <1.2 W conduction loss at 6 A continuous current |
| Qg max | 70 nC - reduces gate drive power and allows use of low-current drivers (e.g., UCC27611) |
| trr / Qrr | 108 ns / 0.5 μC typ. - minimizes reverse recovery losses and EMI in hard-switched topologies |
| EAS | 127 mJ - ensures robustness against transient overcurrents without external snubbers |
| RthJC | 0.72 °C/W typ. - supports >100 W dissipation with moderate heatsinking on 2-layer PCB |
| dV/dt immunity | 70 V/ns at TJ = 125 °C - prevents false turn-on in high-noise high-side configurations |
Pinout & Package
SIHH11N65EF-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for thermal performance and four dedicated terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), Drain (Pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main control input; connects to gate driver output with minimal trace inductance |
| Pin 2 | Kelvin Source | Dedicated low-inductance return path for gate loop-bypasses power source current to eliminate Miller-induced oscillation |
| Pin 3 | Power Source | High-current source terminal; carries full load current to PCB ground plane or source rail |
| Pin 4 | Drain | High-voltage power input/output node; soldered directly to large copper pour for thermal and electrical integrity |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Separates gate return path from power source current, eliminating common-source inductance effects and enabling stable 100+ V/ns switching |
| Fast body diode (trr = 108 ns) | Reduces dead-time losses and voltage spikes in synchronous rectification and bidirectional converters |
| Avalanche energy rating (EAS = 127 mJ) | Eliminates need for external clamping circuits in inductive load switching applications like motor drives and welders |
| Low Ciss (1243 pF typ.) | Minimizes capacitive loading on gate drivers and improves switching speed consistency across temperature |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E, suitable for industrial and telecom equipment requiring green compliance |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Boost PFC stage in 3 kW front-end AC/DC module for cloud data center servers. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 100 kHz. Use Value: 0.332 Ω RDS(on) and 35 nC Qg reduce total losses by ~18 % vs. legacy 650 V MOSFETs, improving system efficiency to >96.5 %. |
Use Scenario: Primary-side switch in 48 V telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching device handling 400 V DC input and 10 A peak current with 500 ns dead time. Use Value: 70 V/ns dV/dt immunity and Kelvin source prevent false triggering during high dv/dt transitions across transformer leakage inductance. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switching in string-level MPPT converter for residential solar inverters. IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost stage operating at 65 kHz with 450 V DC bus. Use Value: 127 mJ EAS rating withstands line transients and grid surges without derating, extending field reliability beyond 20 years. |
Use Scenario: Inverter leg switch in 5.5 kW variable-frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2-level inverter bridge with 16 kHz PWM. Use Value: Fast body diode (trr = 108 ns) eliminates need for external anti-parallel SiC Schottky diodes, reducing BOM cost and layout area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | 650 V, 48 A, TO-247 package; higher RDS(on) (0.065 Ω), no Kelvin source, larger footprint | Better suited for lower-frequency (<50 kHz), higher-current industrial inverters where thermal mass outweighs switching loss | Choose when board space permits TO-247 and gate drive simplicity is prioritized over high-frequency optimization |
| IXTH12N65X2 | 650 V, 12 A, TO-247 package; 0.32 Ω RDS(on), no Kelvin source, higher Qg (92 nC) | Higher conduction loss but superior UIS ruggedness (220 mJ); used in welding and induction heating with extreme surge stress | Prefer when unclamped inductive energy exceeds 150 mJ and Kelvin-source noise control is secondary |
Compared with STW48N65M5 and IXTH12N65X2, SIHH11N65EF-T1-GE3 delivers best-in-class switching efficiency per mm² due to its Kelvin source, low Qg, and fast diode-making it optimal for space-constrained, high-frequency PFC and SMPS designs where EMI and thermal density are critical.
Availability
SIHH11N65EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHH11N65EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous AEC-Q101 and JESD22 qualification.
The E Series Power MOSFETs-including SIHH11N65EF-T1-GE3-are engineered for high-efficiency, high-reliability power conversion in telecom, server, and renewable energy systems where low switching loss and ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for SIHH11N65EF-T1-GE3 at TC = 100 °C?
The SIHH11N65EF-T1-GE3 has a continuous drain current rating of 7 A at case temperature (TC) = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 11 A rating at TC = 25 °C, based on its RthJC = 0.72 °C/W and 130 W maximum power dissipation limit.
Does SIHH11N65EF-T1-GE3 support logic-level gate drive?
No, SIHH11N65EF-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. For reliable enhancement-mode operation and low on-resistance, a 10 V–15 V gate drive is required-not 3.3 V or 5 V logic levels.
How does the Kelvin source connection in SIHH11N65EF-T1-GE3 improve switching behavior?
The Kelvin source (Pin 2) in SIHH11N65EF-T1-GE3 provides a dedicated low-inductance return path for the gate driver loop, decoupling it from high di/dt power source current flowing through Pin 3. This eliminates voltage spikes across common-source inductance that cause false turn-on and ringing-enabling clean 70 V/ns switching without added gate resistors or ferrite beads.
What is the typical reverse recovery charge (Qrr) of SIHH11N65EF-T1-GE3, and why does it matter?
The SIHH11N65EF-T1-GE3 has a typical reverse recovery charge (Qrr) of 0.5 μC at TJ = 25 °C, IS = 6 A, and dI/dt = 100 A/μs. Low Qrr directly reduces switching losses and voltage overshoot during body diode commutation-critical in PFC and half-bridge topologies where the intrinsic diode conducts during dead time.
Is SIHH11N65EF-T1-GE3 suitable for use in automotive applications?
SIHH11N65EF-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. It is designed and tested for industrial, telecom, and renewable energy applications per JEDEC standards. For automotive-grade alternatives, consult Vishay's AQ series or contact Aetrix for qualified replacements.
SIHH11N65EF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 382mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1243 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH11N65EF-T1-GE3 FAQ
1.How can I place an order for SIHH11N65EF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH11N65EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH11N65EF-T1-GE3 reliable?
The price and inventory of SIHH11N65EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH11N65EF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH11N65EF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH11N65EF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH11N65EF-T1-GE3?
SIHH11N65EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH11N65EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH11N65EF-T1-GE3?
For technical support, including SIHH11N65EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH11N65EF-T1-GE3 requirements.
6.How does Aetrix verify that SIHH11N65EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH11N65EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH11N65EF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH11N65EF-T1-GE3?
All SIHH11N65EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH11N65EF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH11N65EF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH11N65EF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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