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Vishay Siliconix SIHH11N65E-T1-GE3
- Part No.:
- SIHH11N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH11N65E-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 12A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:6,942
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Product details
Overview
SIHH11N65E-T1-GE3 from Vishay Siliconix is a 650 V, 12 A N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers RDS(on) = 0.316 Ω at VGS = 10 V, Qg = 34 nC (typ), and avalanche-rated EAS = 127 mJ - enabling reduced conduction and switching losses in telecom rectifiers and solar inverters.
For engineers reviewing the SIHH11N65E-T1-GE3 datasheet, SIHH11N65E-T1-GE3 pinout, SIHH11N65E-T1-GE3 application, or SIHH11N65E-T1-GE3 equivalent, key selection criteria include its ultra-low gate charge, Kelvin-source noise immunity, 650 V blocking capability, and thermal resistance RthJC = 0.72 °C/W - critical for high-power density, thermally constrained designs.
Technical Context
This device uses planar trench-gate silicon technology to achieve low RDS(on) × Qg figure-of-merit (FOM) while maintaining robust UIS ruggedness. Its Kelvin source terminal separates power and signal return paths, minimizing gate drive loop inductance and suppressing oscillation during fast dV/dt switching.
The MOSFET supports hard-switched topologies up to 650 V DC bus, with specified dV/dt immunity of 70 V/ns at TJ = 125 °C and reverse diode dV/dt rating of 24 V/ns. Body diode recovery parameters (Qrr = 3.8 μC typ, trr = 321 ns typ) are characterized under standardized 100 A/μs conditions for accurate loss modeling in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input PFC and 600 V DC bus systems with margin |
| RDS(on) typ @ 10 V | 0.316 Ω - enables ≤ 2.3 W conduction loss at 8.5 A RMS in continuous conduction mode |
| Qg max | 68 nC - reduces gate driver power demand and switching transition time in high-frequency SMPS |
| EAS | 127 mJ - ensures reliable unclamped inductive switching in motor drives and welders without external snubbers |
| RthJC max | 0.96 °C/W - allows >100 W power dissipation with standard heatsink interface at TC = 100 °C |
| Ciss | 1257 pF - contributes to predictable Miller plateau timing and stable gate control in isolated drivers |
| VGS(th) | 2–4 V - ensures clean turn-on with standard 10 V gate drivers and avoids partial-enhancement risk |
Pinout & Package
SIHH11N65E-T1-GE3 is housed in a surface-mount PowerPAK® 8 × 8 package (8.0 mm × 8.0 mm × 1.0 mm), featuring copper-clip construction for low parasitic inductance and enhanced thermal transfer to PCB copper planes. The package includes four terminals with exposed drain pad on bottom for direct thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input; connects to driver IC output with minimal trace inductance |
| Pin 2 | Kelvin Source | Dedicated low-inductance sense path for gate driver feedback - isolates power source return from gate reference |
| Pin 3 | Source | Main power source terminal; carries full load current and connects to power ground plane |
| Pin 4 | Drain | High-side switching node; electrically and thermally connected to large PCB copper area via bottom-exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | Reduces combined conduction + switching losses by ≥15% vs. legacy 650 V MOSFETs in 100–300 kHz PFC stages |
| Kelvin source connection | Eliminates source inductance impact on gate drive, enabling stable operation at dV/dt ≥ 50 V/ns without gate ringing |
| Avalanche energy rated (UIS) | Withstands single-pulse inductive transients up to 127 mJ - removes need for external clamping in flyback and resonant converters |
| Ultra-low Ciss and Coss | Minimizes capacitive switching losses and improves light-load efficiency in LLC and phase-shifted full-bridge topologies |
| Lead (Pb)-free and Halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709B - suitable for industrial and telecom equipment with strict environmental requirements |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
|
Use Scenario: Primary-side switching in 3.3 kW server front-end PFC stage operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switch in continuous conduction mode (CCM) boost converter. Use Value: Low Qg and Kelvin source enable <1.2% efficiency gain over prior-generation MOSFETs while reducing gate driver thermal stress. |
Use Scenario: DC-link switching in 5 kW string inverter H-bridge output stage. IC Role / Device Role / Timing Role: 650 V high-side switch handling bidirectional current with body diode commutation. Use Value: Characterized Qrr and soft-recovery diode reduce EMI and switching loss by 22% compared to non-Kelvin alternatives. |
| Industrial Welder | Fluorescent Ballast |
|
Use Scenario: IGBT replacement in 12 kW inverter-based arc welder output stage. IC Role / Device Role / Timing Role: Hard-switched 650 V main switch with repetitive UIS stress during short-circuit events. Use Value: 127 mJ EAS rating eliminates need for active crowbar protection, simplifying control logic and BOM. |
Use Scenario: Resonant half-bridge switch in electronic fluorescent ballast driving 40–60 W lamps. IC Role / Device Role / Timing Role: Fast-turning N-channel switch synchronized to zero-voltage switching (ZVS) transitions. Use Value: Low Coss and tight VGS(th) tolerance ensure consistent ZVS initiation across temperature and unit-to-unit variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N65M5 | 650 V, 65 A, RDS(on) = 0.055 Ω, TO-247 package, no Kelvin source | Higher current rating but larger footprint and higher gate charge (120 nC); requires snubber for same dV/dt conditions | Preferred for lower-frequency (<50 kHz), higher-current industrial motor drives where layout space permits TO-247 |
| IXFH32N65X2 | 650 V, 32 A, RDS(on) = 0.135 Ω, TO-247, no Kelvin source, higher Qg (92 nC) | Higher conduction loss at 12 A but superior SOA for linear-mode operation; lacks avalanche rating | Selected when precise analog control or extended safe operating area is required over switching efficiency |
Compared with STW65N65M5 and IXFH32N65X2, SIHH11N65E-T1-GE3 offers best-in-class FOM for compact, high-frequency PFC and inverter designs - trading absolute current rating for superior thermal performance per mm² and noise-immune gate control via Kelvin source.
Availability
SIHH11N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial welding equipment requiring stable component supply and long-term production continuity.
Supply support for SIHH11N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIHH11N65E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in telecom, industrial, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIHH11N65E-T1-GE3 at 100 °C case temperature?
The SIHH11N65E-T1-GE3 has a continuous drain current rating of 8 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 12 A rating at TC = 25 °C and reflects real-world thermal constraints in enclosed power modules. Designers must verify junction temperature using RthJC = 0.72 °C/W and actual power dissipation to ensure operation remains within the -55 °C to +150 °C TJ range.
Does SIHH11N65E-T1-GE3 support gate drive with 5 V logic-level signals?
No, SIHH11N65E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) is specified from 2 V to 4 V, but RDS(on) is characterized only at VGS = 10 V, and full enhancement requires ≥8 V. Driving SIHH11N65E-T1-GE3 with 5 V logic will result in incomplete turn-on, excessive RDS(on), and thermal runaway. A dedicated 10–15 V gate driver with sufficient peak current (>2 A) is required for reliable operation.
How does the Kelvin source connection in SIHH11N65E-T1-GE3 improve switching performance?
The Kelvin source connection in SIHH11N65E-T1-GE3 separates the high-current source return path (Pin 3) from the gate drive reference path (Pin 2), eliminating source inductance-induced voltage spikes during switching transitions. This prevents false turn-off due to VGS undershoot and suppresses gate oscillation at dV/dt rates up to 70 V/ns - enabling stable operation in high-speed, high-noise environments like telecom rectifiers and solar inverters without added gate resistors or ferrite beads.
Is SIHH11N65E-T1-GE3 suitable for use in synchronous rectification topologies?
SIHH11N65E-T1-GE3 is not recommended for synchronous rectification due to its relatively high RDS(on) (0.316 Ω) and body diode forward voltage (VSD = 0.9–1.2 V). Synchronous rectifiers require low RDS(on) and fast, low-VF body diodes - characteristics better served by dedicated 650 V superjunction MOSFETs with RDS(on) < 0.1 Ω and Qrr < 1 μC. SIHH11N65E-T1-GE3 is optimized for primary-side switching, not secondary-side rectification.
What is the avalanche energy rating (EAS) of SIHH11N65E-T1-GE3 and how is it tested?
The SIHH11N65E-T1-GE3 has a single-pulse avalanche energy rating of 127 mJ, measured under standardized UIS test conditions: VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 3 A. This rating confirms the device can safely absorb inductive energy during transient overloads - such as transformer saturation or short circuits - without failure, making it suitable for ruggedized industrial power stages where external protection is minimized.
SIHH11N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 363mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1257 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH11N65E-T1-GE3 FAQ
1.How can I place an order for SIHH11N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH11N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH11N65E-T1-GE3 reliable?
The price and inventory of SIHH11N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH11N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH11N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH11N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH11N65E-T1-GE3?
SIHH11N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH11N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH11N65E-T1-GE3?
For technical support, including SIHH11N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH11N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH11N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH11N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH11N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH11N65E-T1-GE3?
All SIHH11N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH11N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH11N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH11N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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