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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH125N60EF-T1GE3

Name: SIHH125N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHH125N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH125N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH125N60EF-T1GE3.pdf

Description:: MOSFET N-CH 600V 23A PPAK 8 X 8

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Product details

Overview

SIHH125N60EF-T1GE3 from Vishay Siliconix is a 600 V, 23 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.109 Ω (typ.) at V_GS = 10 V, Q_g = 31 nC (typ.), and fast body diode with t_rr = 117 ns (typ.), enabling reduced switching losses in hard-switched topologies.

For engineers reviewing the SIHH125N60EF-T1GE3 datasheet, SIHH125N60EF-T1GE3 pinout, SIHH125N60EF-T1GE3 application, or SIHH125N60EF-T1GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated UIS capability (88 mJ), and Kelvin source configuration for gate-drive stability in high-di/dt environments.

Technical Context

This device belongs to Vishay's EF Series - fourth-generation E-series technology - engineered for high-voltage, medium-power applications requiring both low conduction loss and fast, controlled switching. Its dual-drain layout and Kelvin source terminal decouple power and signal return paths to minimize gate-loop inductance and suppress oscillation during turn-off.

The MOSFET integrates an optimized fast-recovery body diode (Q_rr = 0.7 μC typ., t_rr = 117 ns) and exhibits low effective output capacitance (C_oss(er) = 54 pF), reducing capacitive turn-on loss in ZVS-influenced designs. Thermal resistance R_thJC = 0.57 °C/W enables high-power operation with minimal case-to-junction temperature rise.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V DC bus designs with 25 % margin for voltage transients in telecom/server PSUs
R_DS(on) typ. @ 10 V	0.109 Ω - delivers ≤ 1.6 W conduction loss at 12 A continuous drain current
Q_g max	47 nC - enables efficient gate drive with standard 1–2 A peak drivers without excessive Miller plateau time
t_rr typ.	117 ns - reduces diode reverse recovery stress and EMI in bridge-leg commutation
E_AS	88 mJ - rated unclamped inductive switching energy allows robust operation under transient overloads
R_thJC max	0.80 °C/W - supports >100 W dissipation with moderate heatsinking in compact 8 mm × 8 mm footprint
I_D cont. @ T_C = 100 °C	14 A - defines usable current limit in thermally constrained industrial enclosures

Pinout & Package

SIHH125N60EF-T1GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.00 mm × 8.00 mm × 1.00 mm), featuring exposed drain pad for thermal performance and four dedicated terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), Drain (Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Standard gate control input; routed separately from power loops to avoid noise coupling
Pin 2	Kelvin Source	Low-current reference path for gate driver feedback - eliminates source inductance impact on switching timing
Pin 3	Power Source	Main current return path for load current; connects directly to PCB ground plane for low-impedance conduction
Pin 4	Drain	High-side power node; soldered to large copper area for thermal transfer and voltage standoff

Key Features

Feature	Design Value
4th-gen EF Series technology	Optimized cell pitch and trench geometry deliver best-in-class R_DS(on) × Q_g FOM of ~3.2 Ω·nC
Kelvin source configuration	Separates gate-return path from high-di/dt source current, improving gate control fidelity and dV/dt immunity
Fast body diode (t_rr = 117 ns)	Enables reliable synchronous rectification and reduces shoot-through risk in half-bridge configurations
Avalanche-rated (E_AS = 88 mJ)	Guarantees ruggedness during unclamped inductive switching events without derating
Low C_oss(er) = 54 pF	Minimizes turn-on switching loss in hard-switched converters operating above 100 kHz

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 48 V/54 V intermediate bus converters with active clamp or LLC topology. IC Role / Device Role / Timing Role: High-side switching element handling 12–20 A DC current at 100–300 kHz switching frequency. Use Value: Low Q_g and Kelvin source reduce gate-drive loss and improve efficiency by ≥0.4 % at full load versus non-Kelvin alternatives.	Use Scenario: Boost PFC stage in 3 kW telecom rectifiers operating at 65 kHz with 380–400 V DC output. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 15 A RMS input current with tight di/dt control. Use Value: Fast body diode and low C_oss(er) cut reverse recovery loss by 35 % compared to standard 600 V MOSFETs.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600 V DC input and transformerless topology. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz three-phase inverter legs driving 5–10 kW loads. Use Value: 600 V rating and 88 mJ E_AS ensure safe operation during grid fault transients without snubber circuits.	Use Scenario: Half-bridge leg in 7.5 kW servo drive with regenerative braking and high dv/dt demands. IC Role / Device Role / Timing Role: Switching device subjected to 50 V/ns voltage slew rates during PWM transitions. Use Value: dv/dt rating of 70 V/ns and Kelvin source enable stable gate control without external Miller clamping.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 48 V/54 V intermediate bus converters with active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-side switching element handling 12–20 A DC current at 100–300 kHz switching frequency.

Use Value: Low Q_g and Kelvin source reduce gate-drive loss and improve efficiency by ≥0.4 % at full load versus non-Kelvin alternatives.

Use Scenario: Boost PFC stage in 3 kW telecom rectifiers operating at 65 kHz with 380–400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 15 A RMS input current with tight di/dt control.

Use Value: Fast body diode and low C_oss(er) cut reverse recovery loss by 35 % compared to standard 600 V MOSFETs.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz three-phase inverter legs driving 5–10 kW loads.

Use Value: 600 V rating and 88 mJ E_AS ensure safe operation during grid fault transients without snubber circuits.

Use Scenario: Half-bridge leg in 7.5 kW servo drive with regenerative braking and high dv/dt demands.

IC Role / Device Role / Timing Role: Switching device subjected to 50 V/ns voltage slew rates during PWM transitions.

Use Value: dv/dt rating of 70 V/ns and Kelvin source enable stable gate control without external Miller clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 58 A, TO-247; no Kelvin source; higher R_DS(on) (0.115 Ω); Q_g = 65 nC	Requires larger heatsink and higher gate drive current; suited for lower-frequency (<50 kHz) industrial SMPS	Choose when board space permits TO-247 and gate drive can support 65 nC charge
IXFH32N60P	600 V, 32 A, TO-247; no Kelvin source; R_DS(on) = 0.135 Ω; Q_g = 52 nC; slower t_rr (250 ns)	Higher conduction loss and longer diode recovery increase EMI and thermal stress in high-frequency PFC	Prefer only where legacy TO-247 footprint is fixed and efficiency targets are relaxed

Compared with STW62N60M2 and IXFH32N60P, SIHH125N60EF-T1GE3 offers superior high-frequency efficiency due to its Kelvin source, lower Q_g, and faster body diode - critical for compact, high-density server and telecom power designs where thermal headroom and EMI are tightly constrained.

Availability

SIHH125N60EF-T1GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIHH125N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SIHH125N60EF-T1GE3 belongs to Vishay's EF Series - designed specifically for high-efficiency, high-voltage power conversion systems demanding low switching loss, fast body diode recovery, and rugged avalanche performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SIHH125N60EF-T1GE3 at 100 °C case temperature?

The SIHH125N60EF-T1GE3 has a maximum continuous drain current (I_D) of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 23 A value at 25 °C and ensures safe operation within the device's 150 °C maximum junction temperature limit when mounted on a properly sized PCB copper area.

Does SIHH125N60EF-T1GE3 support gate drive at 5 V logic level?

No, SIHH125N60EF-T1GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, but it is characterized and optimized for 10 V gate drive. At V_GS = 5 V, R_DS(on) increases significantly beyond specification - the datasheet confirms R_DS(on) = 0.109 Ω only at V_GS = 10 V and I_D = 12 A. Using 5 V drive risks excessive conduction loss and thermal runaway.

How does the Kelvin source connection in SIHH125N60EF-T1GE3 improve switching performance?

The Kelvin source (Pin 2) in SIHH125N60EF-T1GE3 provides a dedicated low-current return path for the gate driver, isolating it from high-di/dt power source current flowing through Pin 3. This eliminates source inductance-induced voltage drop during switching transitions, preventing false turn-off and improving gate control accuracy - especially critical in high-frequency, high-efficiency topologies like LLC resonant converters where precise timing is essential.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH125N60EF-T1GE3?

The typical reverse recovery charge (Q_rr) of the integrated body diode in SIHH125N60EF-T1GE3 is 0.7 μC, measured at T_J = 25 °C, I_F = 12 A, di/dt = 100 A/μs, and V_R = 400 V. This low Q_rr - combined with t_rr = 117 ns - directly reduces switching loss and EMI in bridge-leg and synchronous rectifier applications compared to standard 600 V MOSFETs.

Is SIHH125N60EF-T1GE3 lead (Pb)-free and halogen-free?

Yes, SIHH125N60EF-T1GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the Vishay datasheet (S23-0653-Rev. B). The "-T1GE3" suffix denotes RoHS-compliant packaging with matte tin plating and green molding compound, meeting JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.

SIHH125N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1533 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH125N60EF-T1GE3 FAQ

1.How can I place an order for SIHH125N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH125N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH125N60EF-T1GE3 reliable?

The price and inventory of SIHH125N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH125N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHH125N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH125N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH125N60EF-T1GE3?

SIHH125N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH125N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH125N60EF-T1GE3?

For technical support, including SIHH125N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH125N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHH125N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH125N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH125N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHH125N60EF-T1GE3?

All SIHH125N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH125N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH125N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHH125N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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