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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH14N60EF-T1-GE3

Name: SIHH14N60EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH14N60EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH14N60EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH14N60EF-T1-GE3.pdf

Description:: MOSFET N-CH 600V 15A PPAK 8 X 8

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Product details

Overview

SIHH14N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.231 Ω (typ) at V_GS = 10 V, Q_g = 42 nC (typ), and avalanche-rated E_AS = 173 mJ - enabling reduced conduction and switching losses in telecom rectifiers and solar inverters.

For engineers reviewing the SIHH14N60EF-T1-GE3 datasheet, SIHH14N60EF-T1-GE3 pinout, SIHH14N60EF-T1-GE3 application, or SIHH14N60EF-T1-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 111 ns typ), low C_iss = 1449 pF, and Kelvin source configuration for gate drive stability in high-dI/dt hard-switching topologies.

Technical Context

This device belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, medium-power applications requiring robust unclamped inductive switching capability and low gate charge. Its Kelvin source terminal isolates sensing from high-current paths, minimizing gate oscillation during fast turn-on/turn-off transitions.

The MOSFET features an integrated fast-recovery body diode (V_SD = 0.9 V typ at I_S = 7 A, t_rr = 111 ns) and is rated for dV/dt = 70 V/ns (T_J = 125 °C), supporting stable operation in ZVS and resonant converter designs where diode reverse recovery stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in 400 V DC bus systems with 20 % margin for voltage spikes.
R_DS(on) typ @ 10 V	0.231 Ω - enables ≤1.1 W conduction loss at 7 A continuous drain current (T_C = 100 °C).
Q_g typ	42 nC - reduces gate driver power demand and allows use of lower-cost, lower-current drivers in high-frequency SMPS.
t_rr typ	111 ns - minimizes diode-induced switching loss and EMI in PFC boost stages operating above 100 kHz.
E_AS	173 mJ - ensures reliable operation under unclamped inductive load transients without external snubbers.
R_thJC max	0.85 °C/W - supports >100 W power dissipation with moderate heatsinking in compact server PSU modules.
V_GS(th)	2.0–4.0 V - compatible with standard 10 V gate drivers while avoiding false turn-on from noise coupling.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <1 μA leakage (IGSS ≤ ±100 nA) for stable biasing.
Pin 2	Kelvin Source	Dedicated low-noise source reference for gate driver feedback - decouples gate loop from high di/dt power return path.
Pin 3	Source	Main power return path; carries full load current (ID = 15 A continuous); tied to PCB ground plane.
Pin 4	Drain	High-voltage power output node; connected to exposed copper pad on bottom for thermal conduction to heatsink.

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) FOM	Q_g × R_DS(on) = 9.7 nC·Ω - improves trade-off between switching speed and conduction loss in high-frequency PFC.
Kelvin source configuration	Separates gate drive return from power source return - eliminates source inductance-induced gate ringing during hard switching.
Fast body diode with low Q_rr	Q_rr = 0.6 μC (typ) - reduces reverse recovery loss and associated EMI in bridge-leg and synchronous rectifier configurations.
Avalanche energy rating	E_AS = 173 mJ - permits safe operation in non-ZVS topologies without additional clamping circuitry.
Low C_iss and C_oss	C_iss = 1449 pF, C_oss(er) = 45 pF - enables faster voltage transition and lower capacitive switching loss at 480 V bus.

Applications

Server Power Supply Rectification	Telecom AC-DC Front-End
Use Scenario: High-density 1U server PSUs using interleaved PFC + LLC topology with 380–400 V DC bus. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in boost PFC stage, operating at 100–200 kHz with hard-switched gate drive. Use Value: Low Q_g and Kelvin source reduce gate drive loss and improve efficiency by ≥0.4 % at 50 % load vs. standard SO-8 MOSFETs.	Use Scenario: 3 kW telecom rectifier with active clamp forward or phase-shifted full-bridge architecture. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, leveraging fast body diode for freewheeling during dead time. Use Value: t_rr = 111 ns and V_SD = 0.9 V minimize voltage overshoot and conduction loss during zero-voltage switching transitions.
Solar PV Inverter Boost Stage	Industrial Motor Drive Inverter Leg
Use Scenario: String-level DC-DC boost converter in central PV inverters handling up to 1500 V string voltage. IC Role / Device Role / Timing Role: High-side boost switch in two-stage architecture, switching at 30–60 kHz with 480 V V_DS stress. Use Value: R_thJC = 0.64 °C/W and E_AS = 173 mJ ensure thermal stability and transient robustness under partial shading faults.	Use Scenario: 3-phase IGBT gate driver auxiliary supply with isolated DC-DC converter feeding gate bias rails. IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter powering isolated gate drivers for 600–1200 V IGBTs. Use Value: V_DS = 600 V rating and dV/dt = 70 V/ns support reliable operation in noisy motor drive environments with fast-rising bus transients.

Server Power Supply Rectification

Telecom AC-DC Front-End

Use Scenario: High-density 1U server PSUs using interleaved PFC + LLC topology with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in boost PFC stage, operating at 100–200 kHz with hard-switched gate drive.

Use Value: Low Q_g and Kelvin source reduce gate drive loss and improve efficiency by ≥0.4 % at 50 % load vs. standard SO-8 MOSFETs.

Use Scenario: 3 kW telecom rectifier with active clamp forward or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, leveraging fast body diode for freewheeling during dead time.

Use Value: t_rr = 111 ns and V_SD = 0.9 V minimize voltage overshoot and conduction loss during zero-voltage switching transitions.

Solar PV Inverter Boost Stage

Industrial Motor Drive Inverter Leg

Use Scenario: String-level DC-DC boost converter in central PV inverters handling up to 1500 V string voltage.

IC Role / Device Role / Timing Role: High-side boost switch in two-stage architecture, switching at 30–60 kHz with 480 V V_DS stress.

Use Value: R_thJC = 0.64 °C/W and E_AS = 173 mJ ensure thermal stability and transient robustness under partial shading faults.

Use Scenario: 3-phase IGBT gate driver auxiliary supply with isolated DC-DC converter feeding gate bias rails.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter powering isolated gate drivers for 600–1200 V IGBTs.

Use Value: V_DS = 600 V rating and dV/dt = 70 V/ns support reliable operation in noisy motor drive environments with fast-rising bus transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 105 nC (higher), TO-247 package, no Kelvin source.	Better conduction loss but higher gate drive loss; unsuitable for ultra-high-frequency PFC due to larger package inductance.	Prefer when thermal budget allows larger heatsink and switching frequency ≤65 kHz.
IXFH30N60X	R_DS(on) = 0.13 Ω, Q_g = 65 nC, TO-247, standard source, no avalanche rating.	Higher conduction loss than SIHH14N60EF-T1-GE3 but wider availability; lacks E_AS spec and fast diode optimization.	Acceptable for non-critical industrial SMPS where cost outweighs efficiency and reliability requirements.

Compared with STW48N60M2 and IXFH30N60X, SIHH14N60EF-T1-GE3 offers superior high-frequency efficiency via Kelvin source and low Q_g, while maintaining robust avalanche capability - making it optimal for space-constrained, high-efficiency telecom and solar front-end converters.

Availability

SIHH14N60EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH14N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-voltage, medium-power switching applications including PFC, server/telecom SMPS, and renewable energy converters - prioritizing low FOM, fast body diodes, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHH14N60EF-T1-GE3 at 100 °C case temperature?

The SIHH14N60EF-T1-GE3 is rated for 9 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from the 15 A rating at T_C = 25 °C, based on a linear derating factor of 1.2 W/°C and R_thJC = 0.64 °C/W. Designers must verify junction temperature rise using actual board layout and heatsink conditions before finalizing thermal design for SIHH14N60EF-T1-GE3.

Does SIHH14N60EF-T1-GE3 have a Kelvin source connection, and how is it implemented physically?

Yes, SIHH14N60EF-T1-GE3 includes a dedicated Kelvin source terminal (Pin 2) separate from the main power source (Pin 3). This configuration isolates the gate driver's source reference from high-di/dt current paths, reducing gate loop inductance and suppressing oscillation. The Kelvin source connects internally to the MOSFET's source region near the gate, not to the power source bond wires - a feature confirmed in the Product Summary and Pin Configuration diagram of the official Vishay datasheet for SIHH14N60EF-T1-GE3.

What is the typical reverse recovery time (t_rr) of the body diode in SIHH14N60EF-T1-GE3, and under what test conditions is it measured?

The typical reverse recovery time (t_rr) of the body diode in SIHH14N60EF-T1-GE3 is 111 ns, measured at T_J = 25 °C with I_F = I_S = 7 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" section of the datasheet and reflects the device's fast-recovery capability - critical for minimizing switching loss and EMI in PFC and synchronous rectifier applications using SIHH14N60EF-T1-GE3.

Is SIHH14N60EF-T1-GE3 rated for unclamped inductive switching (UIS), and what is its single-pulse avalanche energy?

Yes, SIHH14N60EF-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 173 mJ, tested per Note b in the Absolute Maximum Ratings table (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.5 A). This rating confirms robustness against transient overvoltage events in hard-switched topologies and eliminates need for external snubbers in many SMPS designs using SIHH14N60EF-T1-GE3.

What is the gate threshold voltage range for SIHH14N60EF-T1-GE3, and why is this important for gate driver selection?

The gate threshold voltage (V_GS(th)) for SIHH14N60EF-T1-GE3 ranges from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing unintended conduction from noise or leakage currents. Designers must ensure gate drive voltage exceeds 4.0 V to achieve full R_DS(on) specification - a key consideration when selecting gate drivers and level shifters for SIHH14N60EF-T1-GE3 in high-noise industrial or telecom environments.

SIHH14N60EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 266mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1449 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH14N60EF-T1-GE3 FAQ

1.How can I place an order for SIHH14N60EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH14N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH14N60EF-T1-GE3 reliable?

The price and inventory of SIHH14N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH14N60EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH14N60EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH14N60EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH14N60EF-T1-GE3?

SIHH14N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH14N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH14N60EF-T1-GE3?

For technical support, including SIHH14N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH14N60EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHH14N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH14N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH14N60EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH14N60EF-T1-GE3?

All SIHH14N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH14N60EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH14N60EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH14N60EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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