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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH14N60E-T1-GE3

Name: SIHH14N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH14N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH14N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH14N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 16A PPAK 8 X 8

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Product details

Overview

SIHH14N60E-T1-GE3 from Vishay Siliconix is a 600 V, 16 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, R_DS(on) = 0.220 Ω at V_GS = 10 V, Q_g = 41 nC (typ), and avalanche-rated (E_AS = 173 mJ). It delivers low conduction and switching losses for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHH14N60E-T1-GE3 datasheet, SIHH14N60E-T1-GE3 pinout, SIHH14N60E-T1-GE3 application, or SIHH14N60E-T1-GE3 equivalent, key selection criteria include its Kelvin-source–enabled gate drive noise immunity, ultra-low Q_g/C_iss ratio, 600 V blocking capability, and rugged unclamped inductive switching performance - critical for telecom rectifiers and solar PV inverters.

Technical Context

This device employs a trench-gate, superjunction structure optimized for high-voltage, medium-current SMPS operation. Its Kelvin source terminal separates power and signal return paths to minimize gate loop inductance and suppress ringing during fast dV/dt switching (70 V/ns rated).

The MOSFET features fully characterized dynamic parameters including C_iss = 1416 pF, C_oss = 74 pF, and Co(tr) = 232 pF, enabling accurate loss modeling in hard-switched and resonant topologies. Its body diode exhibits t_rr = 288 ns (typ) and Q_rr = 3.5 μC at 25 °C, supporting ZVS-assisted designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom and industrial PFC.
R_DS(on) typ	0.220 Ω at V_GS = 10 V - enables <1.2 W conduction loss at 7 A continuous drain current in TO-220–equivalent thermal envelope.
Q_g typ	41 nC - reduces gate driver power demand and enables >300 kHz operation with standard 1-A drivers.
E_AS	173 mJ - ensures robustness against inductive energy spikes without external snubbers in motor drive or welding inverters.
C_iss	1416 pF - low input capacitance minimizes Miller effect and improves turn-on controllability under high dV/dt conditions.
T_J range	–55 °C to +150 °C - qualified for extended temperature operation in enclosed server PSUs and outdoor solar inverters.
R_thJC max	0.85 °C/W - enables 147 W power dissipation with ≤125 °C case-to-junction rise, supporting compact heatsink integration.

Pinout & Package

SIHH14N60E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for low thermal resistance and four dedicated terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), and Drain (Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main control input; connects to gate driver output with minimal trace inductance to ensure clean switching edge.
Pin 2	Kelvin Source	Dedicated low-current source return for gate driver feedback; isolates gate loop from high di/dt power source path.
Pin 3	Power Source	High-current source terminal carrying load current; soldered to large copper pour for thermal and current handling.
Pin 4	Drain	High-side switch node; connected to DC bus or transformer primary; requires careful layout to minimize parasitic inductance.

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return from power source path, reducing gate oscillation and improving EMI performance in high-dV/dt applications.
Avalanche energy rating (E_AS)	173 mJ single-pulse - eliminates need for external clamping circuits in inductive load switching and fault-tolerant designs.
Ultra-low Q_g/R_DS(on) FOM	41 nC / 0.220 Ω = 186 - balances switching speed and conduction loss for optimal efficiency in 100–300 kHz PFC and LLC converters.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) for green manufacturing and end-of-life compliance.
Low C_iss and C_oss	C_iss = 1416 pF, C_oss = 74 pF - enables faster switching transitions and reduced capacitive turn-off losses in hard-switched topologies.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW 48 V output server PSU using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in boost PFC stage, switching at 150 kHz with synchronous rectification on secondary side. Use Value: Kelvin source minimizes gate ringing under 400 V DC bus transients; 600 V rating accommodates 100 V surge without derating.	Use Scenario: Output rectification and isolation in -48 V telecom rectifier module operating at 200 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes in forward converter secondary side. Use Value: Low R_DS(on) cuts conduction loss by >40 % vs. 40 V Schottky; body diode Q_rr = 3.5 μC enables soft recovery with minimal reverse recovery loss.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in 5 kW string inverter with two-level IGBT + MOSFET hybrid inverter stage. IC Role / Device Role / Timing Role: Fast-switching MOSFET in auxiliary DC-DC bias supply and gate driver auxiliary rail generation. Use Value: 150 °C T_J rating supports operation inside sealed inverter enclosures; E_AS withstands grid fault-induced inductive kickback.	Use Scenario: Brake chopper circuit in 7.5 kW VFD controlling induction motor regenerative braking. IC Role / Device Role / Timing Role: Unclamped inductive switch dissipating regenerated energy into braking resistor. Use Value: 173 mJ E_AS allows single-pulse energy absorption up to 38 A peak current without failure; R_thJC = 0.85 °C/W sustains pulsed thermal loads.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW 48 V output server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in boost PFC stage, switching at 150 kHz with synchronous rectification on secondary side.

Use Value: Kelvin source minimizes gate ringing under 400 V DC bus transients; 600 V rating accommodates 100 V surge without derating.

Use Scenario: Output rectification and isolation in -48 V telecom rectifier module operating at 200 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes in forward converter secondary side.

Use Value: Low R_DS(on) cuts conduction loss by >40 % vs. 40 V Schottky; body diode Q_rr = 3.5 μC enables soft recovery with minimal reverse recovery loss.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in 5 kW string inverter with two-level IGBT + MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in auxiliary DC-DC bias supply and gate driver auxiliary rail generation.

Use Value: 150 °C T_J rating supports operation inside sealed inverter enclosures; E_AS withstands grid fault-induced inductive kickback.

Use Scenario: Brake chopper circuit in 7.5 kW VFD controlling induction motor regenerative braking.

IC Role / Device Role / Timing Role: Unclamped inductive switch dissipating regenerated energy into braking resistor.

Use Value: 173 mJ E_AS allows single-pulse energy absorption up to 38 A peak current without failure; R_thJC = 0.85 °C/W sustains pulsed thermal loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N60DM6	600 V, 16 A, R_DS(on) = 0.23 Ω, Q_g = 45 nC, no Kelvin source, TO-220FP package	Lacks Kelvin source; higher gate charge increases driver stress; through-hole mounting limits board density	Preferred where legacy TO-220 layout exists and gate noise immunity is less critical than cost.
IXFH16N60X3	600 V, 16 A, R_DS(on) = 0.24 Ω, Q_g = 38 nC, no Kelvin source, TO-247 package	Lower Q_g but no Kelvin source; larger footprint and higher R_thJC (1.0 °C/W) limits high-frequency thermal performance	Suitable for lower-frequency (<100 kHz) industrial SMPS where layout space permits TO-247 and gate noise is mitigated externally.

Compared with STP16N60DM6 and IXFH16N60X3, SIHH14N60E-T1-GE3 uniquely combines Kelvin source architecture, 0.85 °C/W R_thJC, and 41 nC Q_g in an 8 mm × 8 mm footprint - delivering superior gate control fidelity and power density for high-frequency, high-reliability PFC and inverter designs.

Availability

SIHH14N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH14N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The SIHH14N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHH14N60E-T1-GE3 at 100 °C case temperature?

The SIHH14N60E-T1-GE3 has a continuous drain current rating of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 16 A rating at 25 °C, ensuring safe operation under sustained high-temperature conditions in enclosed power modules. The linear derating factor is 1.2 W/°C above 100 °C.

Does SIHH14N60E-T1-GE3 support logic-level gate drive?

No, SIHH14N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it reliably requires a 10 V–15 V gate-source voltage; 3.3 V or 5 V logic signals alone cannot achieve low on-resistance or full enhancement.

How does the Kelvin source connection in SIHH14N60E-T1-GE3 improve switching performance?

The Kelvin source connection in SIHH14N60E-T1-GE3 separates the high-current power source path (Pin 3) from the low-current gate driver return path (Pin 2). This eliminates voltage drop-induced gate drive distortion caused by source inductance during high di/dt switching, resulting in cleaner turn-on/turn-off edges, reduced overshoot, and improved EMI behavior - especially critical in >200 kHz PFC stages.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH14N60E-T1-GE3?

The typical reverse recovery charge Q_rr of the integral body diode in SIHH14N60E-T1-GE3 is 3.5 μC at T_J = 25 °C, I_F = 7 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section and supports design of synchronous rectification and freewheeling paths with predictable recovery loss.

Is SIHH14N60E-T1-GE3 suitable for use in avalanche-mode operation?

Yes, SIHH14N60E-T1-GE3 is explicitly rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 173 mJ (tested per note b: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.5 A). This rating validates its use in circuits subject to inductive energy dump, such as motor drive brake choppers and relay driving circuits.

SIHH14N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 255mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1416 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH14N60E-T1-GE3 FAQ

1.How can I place an order for SIHH14N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH14N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH14N60E-T1-GE3 reliable?

The price and inventory of SIHH14N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH14N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH14N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH14N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH14N60E-T1-GE3?

SIHH14N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH14N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH14N60E-T1-GE3?

For technical support, including SIHH14N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH14N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH14N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH14N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH14N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH14N60E-T1-GE3?

All SIHH14N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH14N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH14N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH14N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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