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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH14N65EF-T1-GE3

Name: SIHH14N65EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH14N65EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH14N65EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH14N65EF-T1-GE3.pdf

Description:: MOSFET N-CH 650V 15A PPAK 8 X 8

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Product details

Overview

SIHH14N65EF-T1-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.236 Ω (typ) at V_GS = 10 V, Q_g = 49 nC (typ), and fast body diode (t_rr = 120 ns typ) enabling reduced switching losses in hard-switched topologies.

For engineers reviewing the SIHH14N65EF-T1-GE3 datasheet, SIHH14N65EF-T1-GE3 pinout, SIHH14N65EF-T1-GE3 application, or SIHH14N65EF-T1-GE3 equivalent, key selection criteria include its ultra-low gate charge, avalanche-rated ruggedness (E_AS = 226 mJ), Kelvin-source configuration for gate-drive stability, and thermal resistance R_thJC = 0.57 °C/W for high-power-density designs.

Technical Context

This device belongs to Vishay's E Series high-voltage MOSFETs engineered for fast-switching, high-reliability power conversion. Its Kelvin source terminal separates power and signal return paths, minimizing gate-loop inductance and suppressing oscillation during high dI/dt transitions. The integrated fast body diode supports ZVS-capable topologies and reduces need for external anti-parallel diodes in bridge configurations.

The MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted edge termination to achieve balanced conduction and switching performance. Its 650 V V_DS rating with 700 V surge capability and ±30 V V_GS range supports robust operation in industrial and telecom power systems exposed to voltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 520 V in continuous operation with margin for transient overvoltage in PFC and SMPS applications.
R_DS(on) (typ)	0.236 Ω at V_GS = 10 V, I_D = 7 A - Enables low conduction loss at 15 A continuous drain current (T_C = 25 °C), reducing heatsink requirements.
Q_g (typ)	49 nC - Low total gate charge minimizes drive power and enables efficient operation at 100–300 kHz switching frequencies.
t_rr (typ)	120 ns - Fast reverse recovery time of integral body diode reduces switching loss and EMI in hard-commutated half-bridge and LLC resonant converters.
E_AS	226 mJ - Avalanche energy rating allows reliable unclamped inductive switching without external snubbers in motor drives and welding inverters.
R_thJC	0.57 °C/W - Low junction-to-case thermal resistance supports >100 W dissipation with standard copper PCB thermal pads and heatsink mounting.
C_iss	1749 pF - Input capacitance value directly impacts gate driver sizing and turn-on speed in high-frequency gate-drive circuits.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; connects to gate driver output with low-inductance routing to minimize ringing during fast switching.
Pin 2	Kelvin Source	Dedicated low-current source reference for gate driver feedback; isolates gate loop from high di/dt power return path to improve switching stability.
Pin 3	Source	Main power source terminal; carries full load current and connects to PCB ground plane or source node of half-bridge leg.
Pin 4	Drain	Main power drain terminal; soldered to large copper area or heatsink via exposed pad for thermal management and high-current conduction.

Key Features

Feature	Design Value
Kelvin source connection	Separates gate-drive return path from high-current source return, eliminating common-source inductance effects and enabling stable 100+ kHz switching without gate oscillation.
FOM (R_DS(on) × Q_g)	11.6 - Low figure-of-merit balances conduction and switching losses, supporting high-efficiency operation in 1–3 kW server PSUs and telecom rectifiers.
Avalanche-rated (UIS)	226 mJ single-pulse energy - Eliminates need for external clamping circuits in inductive load switching, simplifying design in battery chargers and induction heating controls.
Fast body diode (t_rr, Q_rr)	120 ns t_rr, 0.6 μC Q_rr - Reduces reverse recovery loss and associated voltage spikes in synchronous rectification and bidirectional DC/DC converters.
Low C_oss (energy-related)	57 pF Co(er) - Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies like LLC and phase-shifted full-bridge.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1U 2 kW AC/DC front-end with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC and primary switch in LLC half-bridge, operating at 100–200 kHz with zero-voltage switching. Use Value: Kelvin source ensures clean gate drive under 30 A peak di/dt; low Q_g and fast t_rr reduce total switching loss by ≥15% vs. standard 650 V MOSFETs.	Use Scenario: 48 V distributed power architecture rectifier with dual-phase interleaved PFC and isolated DC/DC stage. IC Role / Device Role / Timing Role: Main switch in interleaved boost PFC stage, handling 25 A RMS input current with 500 kHz gate drive. Use Value: R_DS(on) = 0.236 Ω and C_iss = 1749 pF enable high efficiency (>96%) at full load while maintaining thermal margin on 2 oz copper PCB.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters using three-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch in NPC inverter leg, subjected to 600 V DC bus and repetitive unclamped inductive stress. Use Value: 226 mJ E_AS rating ensures reliable operation during grid fault conditions without derating; fast body diode supports reactive power control.	Use Scenario: Inverter output stage in 7.5 kW variable-frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase IGBT replacement design, operating at 8 kHz PWM with high dv/dt (70 V/ns). Use Value: 70 V/ns dV/dt rating and low Crss (4 pF) suppress Miller-induced false turn-on; Kelvin source maintains gate integrity under 100 A/μs di/dt.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1U 2 kW AC/DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC and primary switch in LLC half-bridge, operating at 100–200 kHz with zero-voltage switching.

Use Value: Kelvin source ensures clean gate drive under 30 A peak di/dt; low Q_g and fast t_rr reduce total switching loss by ≥15% vs. standard 650 V MOSFETs.

Use Scenario: 48 V distributed power architecture rectifier with dual-phase interleaved PFC and isolated DC/DC stage.

IC Role / Device Role / Timing Role: Main switch in interleaved boost PFC stage, handling 25 A RMS input current with 500 kHz gate drive.

Use Value: R_DS(on) = 0.236 Ω and C_iss = 1749 pF enable high efficiency (>96%) at full load while maintaining thermal margin on 2 oz copper PCB.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters using three-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switch in NPC inverter leg, subjected to 600 V DC bus and repetitive unclamped inductive stress.

Use Value: 226 mJ E_AS rating ensures reliable operation during grid fault conditions without derating; fast body diode supports reactive power control.

Use Scenario: Inverter output stage in 7.5 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase IGBT replacement design, operating at 8 kHz PWM with high dv/dt (70 V/ns).

Use Value: 70 V/ns dV/dt rating and low Crss (4 pF) suppress Miller-induced false turn-on; Kelvin source maintains gate integrity under 100 A/μs di/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	650 V, 48 A, R_DS(on) = 0.065 Ω, no Kelvin source, Q_g = 105 nC, TO-247 package	Higher current rating but larger footprint and higher gate drive requirement; lacks Kelvin source for high-frequency stability	Preferred for lower-frequency, higher-current applications where layout space and thermal mass allow TO-247 mounting
IXFH30N65X2	650 V, 30 A, R_DS(on) = 0.125 Ω, Q_g = 62 nC, TO-247, no Kelvin source	Higher conduction efficiency but slower switching due to higher Q_g; no dedicated Kelvin source limits high-dI/dt reliability	Better suited for 20–50 kHz hard-switched applications where gate drive simplicity outweighs high-frequency optimization needs

Compared with STW48N65M5 and IXFH30N65X2, SIHH14N65EF-T1-GE3 delivers superior high-frequency switching stability via its Kelvin source, lower Q_g-to-R_DS(on) ratio, and smaller PowerPAK® 8 × 8 footprint-making it optimal for space-constrained, >100 kHz PFC and resonant converter designs where gate-loop integrity is critical.

Availability

SIHH14N65EF-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHH14N65EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHH14N65EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, designed specifically for high-efficiency, high-reliability switch-mode power conversion in demanding industrial, telecom, and renewable energy applications.

FAQ

What is the maximum continuous drain current rating for SIHH14N65EF-T1-GE3 at 100 °C case temperature?

The SIHH14N65EF-T1-GE3 has a continuous drain current rating of 9.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating under real-world heatsink conditions and must be validated against actual board layout and airflow in the final application. The SIHH14N65EF-T1-GE3 achieves this rating using its low R_thJC of 0.57 °C/W and PowerPAK® 8 × 8 thermal pad.

Does SIHH14N65EF-T1-GE3 support gate drive at 5 V logic level?

No, SIHH14N65EF-T1-GE3 is not a logic-level MOSFET; its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving the SIHH14N65EF-T1-GE3 with only 5 V may result in incomplete turn-on and excessive conduction loss. A minimum 10 V gate drive is required to achieve the specified 0.236 Ω R_DS(on).

How does the Kelvin source connection in SIHH14N65EF-T1-GE3 improve switching performance?

The Kelvin source in SIHH14N65EF-T1-GE3 provides a dedicated low-current return path for the gate driver, decoupling it from the high-di/dt main source current path. This eliminates voltage drop across common-source inductance that can cause gate oscillation or false turn-off. In practice, this allows the SIHH14N65EF-T1-GE3 to operate reliably at >200 kHz with minimal gate resistor damping, unlike standard 4-pin MOSFETs.

What is the significance of the 226 mJ E_AS rating for SIHH14N65EF-T1-GE3?

The 226 mJ single-pulse avalanche energy (E_AS) rating means SIHH14N65EF-T1-GE3 can safely absorb inductive energy during unclamped inductive switching events-such as transformer leakage in flyback converters or motor winding interruption-without failure. This ruggedness eliminates the need for external avalanche clamps in many industrial applications, simplifying design and improving system reliability for the SIHH14N65EF-T1-GE3.

Can SIHH14N65EF-T1-GE3 replace older 600 V MOSFETs in existing PFC designs?

Yes, SIHH14N65EF-T1-GE3 can replace many 600 V MOSFETs in PFC stages, provided gate drive voltage is increased to 10–12 V and layout accommodates the PowerPAK® 8 × 8 footprint and Kelvin source routing. Its 650 V rating, lower Q_g, and faster body diode typically improve efficiency by 0.3–0.8% in 1–3 kW PFC designs versus legacy devices. Thermal and EMI validation is recommended for the SIHH14N65EF-T1-GE3 in each specific layout.

SIHH14N65EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 271mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1749 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH14N65EF-T1-GE3 FAQ

1.How can I place an order for SIHH14N65EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH14N65EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH14N65EF-T1-GE3 reliable?

The price and inventory of SIHH14N65EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH14N65EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH14N65EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH14N65EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH14N65EF-T1-GE3?

SIHH14N65EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH14N65EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH14N65EF-T1-GE3?

For technical support, including SIHH14N65EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH14N65EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHH14N65EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH14N65EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH14N65EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH14N65EF-T1-GE3?

All SIHH14N65EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH14N65EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH14N65EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH14N65EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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