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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH14N65E-T1-GE3

Name: SIHH14N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH14N65E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH14N65E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH14N65E-T1-GE3.pdf

Description:: MOSFET N-CH 650V 15A PPAK 8 X 8

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Product details

Overview

SIHH14N65E-T1-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.225 Ω at V_GS = 10 V, Q_g = 48 nC (typ.), and E_AS = 226 mJ, enabling reduced conduction and switching losses in telecom and server power systems.

For engineers reviewing the SIHH14N65E-T1-GE3 datasheet, SIHH14N65E-T1-GE3 pinout, SIHH14N65E-T1-GE3 application, or SIHH14N65E-T1-GE3 equivalent, key selection criteria include its Kelvin-source low-noise gate drive capability, 70 V/ns dV/dt rating at T_J = 125 °C, and avalanche-rated ruggedness for unclamped inductive switching in high-reliability industrial converters.

Technical Context

This device employs a superjunction trench-gate structure to achieve low R_DS(on) × Q_g figure-of-merit (FOM), supporting high-frequency operation up to 300 kHz in hard-switched topologies. Its Kelvin source terminal isolates power and signal return paths, minimizing gate loop inductance and suppressing oscillation during fast dI/dt transitions.

The MOSFET features an integrated body diode with t_rr = 349 ns (typ.) and Q_rr = 4.4 μC at T_J = 25 °C, enabling robust performance in continuous conduction mode (CCM) PFC and synchronous rectification where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for surge and ringing
R_DS(on) typ.	0.225 Ω at V_GS = 10 V - enables <1.1 W conduction loss at 7 A continuous drain current
Q_g max	96 nC - determines gate driver power requirement and switching speed control in 100–300 kHz SMPS
E_AS	226 mJ - rated single-pulse avalanche energy ensures reliability under transient overvoltage conditions
C_iss	1712 pF - defines input capacitance seen by gate driver; impacts Miller effect and turn-on delay
R_thJC max	0.80 °C/W - enables >100 W power dissipation with ≤80 °C case-to-junction rise at 156 W P_D
dV/dt rating	70 V/ns at T_J = 125 °C - specifies maximum tolerable drain voltage slew rate without spurious turn-on

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = gate, Pin 2 = Kelvin source, Pin 3 = power source, Pin 4 = drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control terminal; connects to gate driver output with low-inductance trace
Pin 2	Kelvin Source	Dedicated low-current source return for gate driver feedback-eliminates source inductance impact on switching stability
Pin 3	Power Source	High-current source path; connects to main power ground plane with wide copper pour
Pin 4 / Tab	Drain	Exposed drain pad; must be soldered to large thermal pad for R_thJC = 0.57 °C/W performance

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return from high-current source path, reducing gate oscillation and improving dV/dt immunity
Low R_DS(on) × Q_g FOM	10.8 Ω·nC (0.225 Ω × 48 nC) - balances conduction and switching loss for optimal 100–300 kHz efficiency
Avalanche-rated (UIS)	226 mJ single-pulse energy - eliminates need for external snubbers in flyback or LLC resonant converter primary switches
Ultra-low C_iss and C_rss	1712 pF C_iss, 2 pF C_rss - minimizes Miller plateau duration and improves controllability in high-dV/dt environments
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for automotive and industrial applications requiring green compliance

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier operating at 200 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 38 A pulsed drain current and 520 V blocking during off-state. Use Value: Kelvin source reduces gate ringing under 100 A/μs dI/dt, while 70 V/ns dV/dt rating prevents false turn-on during fast voltage transients.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage of 1.5 kW server PSU with 380 V DC link. IC Role / Device Role / Timing Role: Fast-switching, low-loss power transistor managing 15 A RMS current and 650 V peak blocking. Use Value: Low Q_gd/Q_g ratio (21/48 nC) shortens Miller plateau, enabling precise zero-voltage switching (ZVS) timing control.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter for residential solar inverters with 1000 V system voltage. IC Role / Device Role / Timing Role: 650 V-rated high-reliability switch sustaining repetitive unclamped inductive switching during grid fault events. Use Value: 226 mJ E_AS rating allows safe operation without external clamping during IGBT-like fault conditions in DC-DC isolation stages.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable frequency drive using six-step modulation at 4 kHz carrier. IC Role / Device Role / Timing Role: Main power switch conducting 10 A continuous current at T_C = 100 °C with minimal thermal derating. Use Value: 0.57 °C/W R_thJC enables direct mounting to heatsink, reducing thermal interface resistance and improving long-term reliability.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier operating at 200 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 38 A pulsed drain current and 520 V blocking during off-state.

Use Value: Kelvin source reduces gate ringing under 100 A/μs dI/dt, while 70 V/ns dV/dt rating prevents false turn-on during fast voltage transients.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage of 1.5 kW server PSU with 380 V DC link.

IC Role / Device Role / Timing Role: Fast-switching, low-loss power transistor managing 15 A RMS current and 650 V peak blocking.

Use Value: Low Q_gd/Q_g ratio (21/48 nC) shortens Miller plateau, enabling precise zero-voltage switching (ZVS) timing control.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter for residential solar inverters with 1000 V system voltage.

IC Role / Device Role / Timing Role: 650 V-rated high-reliability switch sustaining repetitive unclamped inductive switching during grid fault events.

Use Value: 226 mJ E_AS rating allows safe operation without external clamping during IGBT-like fault conditions in DC-DC isolation stages.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable frequency drive using six-step modulation at 4 kHz carrier.

IC Role / Device Role / Timing Role: Main power switch conducting 10 A continuous current at T_C = 100 °C with minimal thermal derating.

Use Value: 0.57 °C/W R_thJC enables direct mounting to heatsink, reducing thermal interface resistance and improving long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N65M5	650 V, 65 A, R_DS(on) = 0.055 Ω, TO-247 package, no Kelvin source	Higher current rating but larger footprint and higher gate charge (120 nC); lacks Kelvin source for noise-sensitive gate drive	Preferred for higher-current, lower-frequency (<100 kHz) industrial motor drives where layout space permits TO-247
IXTH12N65X2	650 V, 12 A, R_DS(on) = 0.32 Ω, TO-247, ultra-low Q_g = 22 nC, no Kelvin source	Lower Q_g but higher R_DS(on); optimized for ZVS/ZCS soft-switching rather than hard-switched PFC	Better suited for resonant LLC or phase-shifted full-bridge where gate loss dominates and conduction loss is secondary

Compared with STW65N65M5 and IXTH12N65X2, SIHH14N65E-T1-GE3 uniquely combines Kelvin-source noise immunity, mid-range current capability (15 A), and balanced FOM for hard-switched 200–300 kHz telecom/server PFC and primary-side SMPS-offering superior layout compactness and gate drive stability in dense power modules.

Availability

SIHH14N65E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SIHH14N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHH14N65E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switch-mode power conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHH14N65E-T1-GE3 at 100 °C case temperature?

The SIHH14N65E-T1-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and ensures safe operation without exceeding T_J = 150 °C. At T_C = 25 °C, the rating increases to 15 A.

Does SIHH14N65E-T1-GE3 have a Kelvin source connection, and how is it implemented physically?

Yes, SIHH14N65E-T1-GE3 includes a dedicated Kelvin source terminal (Pin 2) separate from the main power source (Pin 3). This dual-source configuration isolates the gate drive return path from high-current source return, reducing gate loop inductance and eliminating source inductance-induced oscillation-critical for stable operation in high-dI/dt applications.

What is the typical total gate charge (Qg) of SIHH14N65E-T1-GE3, and how does it affect gate driver selection?

The SIHH14N65E-T1-GE3 has a typical total gate charge Q_g of 48 nC at V_GS = 10 V. This value directly determines required gate driver peak current: for 50 ns turn-on time, a minimum 0.96 A peak driver is needed. The low Q_g enables use of cost-effective drivers like the UCC27531 or TC4420 without external boost circuitry.

Is SIHH14N65E-T1-GE3 avalanche-rated, and what is its single-pulse energy rating?

Yes, SIHH14N65E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 226 mJ under standard test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A). This rating validates robustness in hard-switched topologies subject to voltage overshoot during turn-off.

What is the thermal resistance from junction to case (RthJC) for SIHH14N65E-T1-GE3, and why does it matter for PCB layout?

The SIHH14N65E-T1-GE3 has a maximum R_thJC of 0.80 °C/W and typical value of 0.57 °C/W. This low thermal resistance requires direct soldering of the exposed drain tab (Pin 4) to a large, multi-layer thermal pad with ≥6 vias to internal ground planes. Proper implementation ensures efficient heat transfer and maintains T_J within safe limits at full 156 W power dissipation.

SIHH14N65E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1712 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH14N65E-T1-GE3 FAQ

1.How can I place an order for SIHH14N65E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH14N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH14N65E-T1-GE3 reliable?

The price and inventory of SIHH14N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH14N65E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH14N65E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH14N65E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH14N65E-T1-GE3?

SIHH14N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH14N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH14N65E-T1-GE3?

For technical support, including SIHH14N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH14N65E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH14N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH14N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH14N65E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH14N65E-T1-GE3?

All SIHH14N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH14N65E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH14N65E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH14N65E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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