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Vishay Siliconix SIHH155N60EF-T1GE3
- Part No.:
- SIHH155N60EF-T1GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH155N60EF-T1GE3.pdf
- Description:
- EF SERIES POWER MOSFET WITH FAST
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SIHH155N60EF-T1GE3 from Vishay Siliconix is a 600 V, 18 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features RDS(on) = 0.137 Ω (typ, VGS = 10 V), Qg = 25 nC (typ), and avalanche-rated UIS capability (EAS = 179 mJ), enabling robust operation in telecom rectifiers and solar PV inverters.
For engineers reviewing the SIHH155N60EF-T1GE3 datasheet, SIHH155N60EF-T1GE3 pinout, SIHH155N60EF-T1GE3 application, or SIHH155N60EF-T1GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), fast body diode (trr = 95 ns typ), Kelvin source configuration for gate drive stability, and 600 V blocking rating suitable for 400 V DC bus systems.
Technical Context
This EF Series MOSFET employs 4th-generation E-series silicon technology to reduce switching and conduction losses simultaneously. Its low effective output capacitance (Co(er) = 61 pF) and reduced Ciss/Coss ratio improve hard-switching efficiency in continuous conduction mode (CCM) PFC and LLC resonant converters.
The integrated Kelvin source terminal (Pin 2) separates power and signal return paths, minimizing gate loop inductance and suppressing oscillation during high-di/dt switching. The device supports unclamped inductive switching (UIS) up to 179 mJ and exhibits stable VGS(th) (3.0–5.0 V) across -55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus designs with 50 % voltage margin for transient overvoltage protection |
| RDS(on) typ @ 10 V | 0.137 Ω - Enables <1.4 W conduction loss at 10 A, reducing heatsink requirements in 1–3 kW SMPS |
| Qg max | 38 nC - Low gate charge allows efficient driving with standard 1-A peak gate drivers at >100 kHz |
| EAS | 179 mJ - Rated single-pulse avalanche energy ensures reliability during load dump or short-circuit events |
| trr typ | 95 ns - Fast body diode recovery minimizes reverse recovery loss and EMI in bridge-leg configurations |
| RthJC max | 0.96 °C/W - Enables >120 W power dissipation with moderate heatsinking in industrial ambient conditions |
| VGS(th) range | 3.0–5.0 V - Ensures clean turn-on with standard 5-V or 12-V gate drivers without risk of partial enhancement |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control input; low-impedance path for gate drive signal; requires <1.8 Ω gate resistor for optimal dv/dt control |
| Pin 2 | Kelvin Source | Reference return for gate driver; isolates power source loop to suppress gate ringing under high di/dt |
| Pin 3 | Source | Main power return path; carries full load current (18 A continuous); connects to PCB ground plane |
| Pin 4 | Drain | High-voltage power input/output node; soldered to large copper area for thermal conduction to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| 4th-gen EF silicon process | Reduces RDS(on) × Qg FOM by >25 % vs. prior generation, directly lowering total switching loss |
| Kelvin source configuration | Eliminates source inductance impact on gate control loop, enabling stable 100+ kHz operation without snubbers |
| Fast body diode (trr = 95 ns) | Minimizes cross-conduction loss and voltage overshoot in synchronous rectification and half-bridge topologies |
| Avalanche-rated (EAS = 179 mJ) | Guarantees ruggedness in unclamped inductive switching-critical for motor drives and welding inverters |
| Low Co(er) (61 pF) | Reduces capacitive turn-off loss and improves ZVS initiation in resonant converters operating above 200 kHz |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switching in 1–3 kW telecom/server AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC and upper leg in LLC half-bridge; operates at 65–150 kHz with hard-switched and soft-switched transitions. Use Value: Low Qg and Co(er) reduce gate drive loss and capacitive turn-off loss, improving full-load efficiency by ≥0.4 % versus legacy 600 V MOSFETs. |
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC using two-level or three-level NPC topology. IC Role / Device Role / Timing Role: Main inverter switch handling bidirectional current; subjected to repetitive UIS stress during grid fault conditions. Use Value: 179 mJ EAS rating and 600 V VDS ensure reliable operation during anti-islanding tests and line surges without derating. |
| Industrial Motor Drive | Fluorescent Ballast Lighting |
Use Scenario: Inverter output stage in 0.75–2.2 kW variable-frequency drives powering induction motors in HVAC and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz PWM inverters; used in 3-phase bridge with freewheeling via internal body diode. Use Value: Fast trr and low VSD (1.2 V) minimize body diode conduction loss during dead-time, reducing thermal stress on heatsink. |
Use Scenario: Resonant half-bridge switch in electronic fluorescent ballasts driving 32–65 W lamps at 25–50 kHz. IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant tank; experiences high dv/dt (>50 V/ns) and repetitive body diode commutation. Use Value: Controlled dv/dt (100 V/ns max) and low Crss (1 pF) suppress EMI generation and enable stable zero-voltage switching across lamp life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, TO-247; higher RDS(on) (0.115 Ω), no Kelvin source, larger footprint | Preferred for bolt-down heatsink integration in industrial UPS; unsuitable for space-constrained SMT layouts | Choose STW62N60M2 only when board space permits TO-247 and higher current headroom is required |
| IXFH30N60X | 600 V, 30 A, TO-247; higher Qg (65 nC), slower trr (220 ns), no avalanche rating | Used in lower-frequency (<60 kHz) SMPS where gate drive strength dominates over switching loss | Select IXFH30N60X if cost sensitivity outweighs efficiency targets and avalanche immunity is not mandated |
Compared with STW62N60M2 and IXFH30N60X, SIHH155N60EF-T1GE3 delivers superior power density and switching efficiency in SMT-based 100–300 kHz designs due to its Kelvin source, low FOM, and guaranteed UIS rating-making it optimal for next-gen compact power supplies.
Availability
SIHH155N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHH155N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF Series MOSFETs are engineered for high-efficiency, high-reliability power conversion in telecom, industrial, and renewable energy systems-emphasizing low-loss switching, rugged avalanche performance, and thermally optimized packaging.
FAQ
What is the maximum continuous drain current rating for SIHH155N60EF-T1GE3 at 100 °C case temperature?
The SIHH155N60EF-T1GE3 has a continuous drain current rating of 12 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 18 A rating at 25 °C and must be validated against actual PCB layout, copper area, and airflow in the final design. SIHH155N60EF-T1GE3 achieves this rating using its low RthJC (0.96 °C/W max) and PowerPAK® 8 × 8 exposed-drain thermal path.
Does SIHH155N60EF-T1GE3 support Kelvin source connection, and how is it implemented physically?
Yes, SIHH155N60EF-T1GE3 implements a dedicated Kelvin source terminal (Pin 2), separate from the main source (Pin 3). This allows gate driver reference to be returned directly to the source potential at the die, eliminating the voltage drop across source bond wires during high di/dt switching. SIHH155N60EF-T1GE3 uses this configuration to maintain gate control fidelity and suppress oscillation in high-frequency PFC and LLC circuits.
What is the typical reverse recovery time (trr) of the body diode in SIHH155N60EF-T1GE3, and under what test conditions is it measured?
The typical reverse recovery time (trr) of the SIHH155N60EF-T1GE3 body diode is 95 ns, measured at TJ = 25 °C, IF = IS = 10 A, di/dt = 100 A/μs, and VR = 400 V. This fast recovery enables reduced switching loss and EMI in bridge-leg and synchronous rectifier applications. SIHH155N60EF-T1GE3 maintains trr < 190 ns (max) across its full operating temperature range.
Is SIHH155N60EF-T1GE3 rated for unclamped inductive switching (UIS), and what is its single-pulse avalanche energy?
Yes, SIHH155N60EF-T1GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (EAS) of 179 mJ, tested per JEDEC JESD24-1. This rating is confirmed at VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 2.8 A. SIHH155N60EF-T1GE3 leverages this ruggedness in motor drive and welding inverter applications where inductive energy must be safely absorbed.
What is the gate-source threshold voltage (VGS(th)) range for SIHH155N60EF-T1GE3, and why is this important for gate drive design?
The gate-source threshold voltage (VGS(th)) for SIHH155N60EF-T1GE3 is specified from 3.0 V to 5.0 V at ID = 250 μA. This controlled range ensures reliable turn-on with standard 5-V or 12-V logic-level gate drivers while preventing unintended conduction from noise or leakage. SIHH155N60EF-T1GE3's tight VGS(th) distribution simplifies gate bias design and improves system robustness across temperature and manufacturing variation.
SIHH155N60EF-T1GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 155mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1465 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH155N60EF-T1GE3 FAQ
1.How can I place an order for SIHH155N60EF-T1GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH155N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH155N60EF-T1GE3 reliable?
The price and inventory of SIHH155N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH155N60EF-T1GE3 is usually 5 days.
3.What payment methods are accepted for SIHH155N60EF-T1GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH155N60EF-T1GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH155N60EF-T1GE3?
SIHH155N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH155N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH155N60EF-T1GE3?
For technical support, including SIHH155N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH155N60EF-T1GE3 requirements.
6.How does Aetrix verify that SIHH155N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH155N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH155N60EF-T1GE3 meets industry standards.
7.What is the process for return or replacement of SIHH155N60EF-T1GE3?
All SIHH155N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH155N60EF-T1GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH155N60EF-T1GE3 part is unused and in its original packaging.
Return procedure for SIHH155N60EF-T1GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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