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Vishay Siliconix SIHH180N60E-T1-GE3
- Part No.:
- SIHH180N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH180N60E-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 19A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:4,161
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Product details
Overview
SIHH180N60E-T1-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency server and telecom power supplies. It delivers RDS(on) = 0.155 Ω (typ.) at VGS = 10 V, Qg = 22 nC (typ.), and EAS = 111 mJ, enabling low conduction and switching losses in hard-switched PFC and LLC topologies.
For engineers reviewing the SIHH180N60E-T1-GE3 datasheet, SIHH180N60E-T1-GE3 pinout, SIHH180N60E-T1-GE3 application, or SIHH180N60E-T1-GE3 equivalent, key selection criteria include its Kelvin-source–enabled gate drive stability, Co(er) = 41 pF for reduced capacitive turn-off loss, avalanche-rated ruggedness, and thermal resistance RthJC = 0.76 °C/W for high-power-density board layouts.
Technical Context
This 4th-generation E-series MOSFET employs trench-gate silicon technology with optimized cell pitch and charge-balanced drift region to achieve low figure-of-merit (RDS(on) × Qg = 3.42 Ω·nC). Its Kelvin source terminal separates high-current source return from gate control path, suppressing gate oscillation under high di/dt conditions.
The device supports unclamped inductive switching (UIS) up to 111 mJ and features Coss(tr) = 251 pF and Coss(er) = 41 pF-distinct capacitance metrics calibrated for time- and energy-based switching loss modeling respectively-enabling accurate loss prediction in resonant and soft-switching converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Maximum blocking voltage compatible with 400 V DC bus + 50 % margin in industrial PFC stages |
| RDS(on) typ. | 0.155 Ω at VGS = 10 V, ID = 9.5 A - Enables <1.4 W conduction loss at 9.5 A continuous current |
| Qg max. | 33 nC - Determines gate driver power requirement and influences switching speed in 100–500 kHz SMPS |
| EAS | 111 mJ - Confirmed single-pulse avalanche energy rating supporting robust operation during transient overloads |
| RthJC | 0.76 °C/W - Enables >100 W power dissipation with ≤77 °C junction rise above 25 °C case temperature |
| Coss(er) | 41 pF - Energy-related output capacitance used to compute turn-off loss in hard-switched applications |
| VGS(th) | 3.0–5.0 V - Threshold range ensures reliable turn-on with standard 10 V gate drivers and noise immunity |
Pinout & Package
SIHH180N60E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring copper-clip construction for low RDS(on) and enhanced thermal performance. The package includes exposed drain pad on bottom side for PCB thermal via attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input; connects to gate driver IC output with minimal trace inductance |
| Pin 2 | Kelvin Source | Dedicated low-noise source reference for gate driver feedback; must be routed separately from high-current source path |
| Pin 3 | Source | Main high-current source return; connects to power ground plane with wide copper pour |
| Pin 4 | Drain | Main high-voltage drain node; electrically and thermally connected to exposed bottom pad |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Separates gate loop from power loop to suppress gate ringing during fast dV/dt switching (>100 V/ns) |
| Low effective output capacitance (Co(er)) | 41 pF enables predictable turn-off loss in hard-switched PFC and ZVS LLC converters |
| Avalanche energy rated (UIS) | 111 mJ allows safe operation under inductive load transients without external snubbers |
| 4th-generation E series FOM | RDS(on) × Qg = 3.42 Ω·nC improves efficiency vs. prior gen in 100–300 kHz telecom PSUs |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912) |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary-side switch in 3.3 kW, 96 % efficient 48 V telecom rectifier with interleaved PFC + phase-shifted full-bridge. IC Role / Device Role / Timing Role: High-side switching element handling 12 A RMS drain current at 125 kHz with 480 V DC bus. Use Value: Kelvin source minimizes gate oscillation during 100 A/μs di/dt events; RthJC = 0.76 °C/W enables compact heatsink design. |
Use Scenario: Boost switch in dual-phase active clamp PFC stage for 2 kW AI server PSU. IC Role / Device Role / Timing Role: Fast-turning, low-Qgd MOSFET operating at 150 kHz with 22 nC total gate charge. Use Value: Coss(er) = 41 pF reduces turn-off loss by ~18 % vs. comparable 650 V MOSFETs in same package. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600 V PV array. IC Role / Device Role / Timing Role: 600 V-class switching device sustaining repetitive 44 A pulsed current during grid synchronization. Use Value: EAS = 111 mJ ensures reliability during line-voltage surges and anti-islanding transients. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC VFD with 16 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: N-channel power switch conducting 19 A continuous current with body diode recovery trr = 282 ns (typ.). Use Value: Low Qrr = 3.6 μC (typ.) reduces reverse recovery loss and EMI in motor winding commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 57 A, RDS(on) = 0.055 Ω, TO-247 package, no Kelvin source | Higher current rating but larger footprint and higher gate charge (Qg = 72 nC) | Preferred where board space permits and higher peak current is required; not drop-in due to package and pinout mismatch |
| IXFH30N60X | 600 V, 30 A, RDS(on) = 0.135 Ω, TO-247, no Kelvin source, higher Coss (120 pF) | Lower RDS(on) but lacks Kelvin source and has 3× higher Co(er) | Suitable for lower-frequency (<100 kHz) applications where gate noise immunity is less critical |
Compared with STW62N60M2 and IXFH30N60X, SIHH180N60E-T1-GE3 offers superior gate noise immunity via Kelvin source, lower switching loss via Co(er) = 41 pF, and smaller PowerPAK® 8 × 8 footprint-making it optimal for space-constrained, high-frequency server and telecom power designs.
Availability
SIHH180N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHH180N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The E Series Power MOSFET product line targets high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter, telecom, and renewable energy systems-designed specifically for demanding hard-switched and resonant topologies.
FAQ
What is the maximum continuous drain current rating for SIHH180N60E-T1-GE3 at 100 °C case temperature?
The SIHH180N60E-T1-GE3 is rated for 12 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 8 × 8 package and ensures safe operation within RthJC = 0.76 °C/W and maximum TJ = 150 °C. At TC = 25 °C, the rating increases to 19 A.
Does SIHH180N60E-T1-GE3 support avalanche operation, and what is its rated energy?
Yes, SIHH180N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 111 mJ, tested per JEDEC JESD24-1. This rating applies under specified conditions: VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 2.8 A. The SIHH180N60E-T1-GE3 is designed for robustness in real-world overcurrent transients.
How does the Kelvin source connection on SIHH180N60E-T1-GE3 improve system performance?
The Kelvin source (Pin 2) on SIHH180N60E-T1-GE3 provides a dedicated low-impedance reference for gate driver feedback, decoupling the gate control loop from high di/dt source current paths. This eliminates gate-source voltage distortion caused by source inductance, preventing false turn-off and oscillation-especially critical in high-frequency, high-power PFC and LLC converters. The SIHH180N60E-T1-GE3 leverages this to maintain stable switching at dv/dt up to 100 V/ns.
What is the typical output capacitance (Coss) and how is Co(er) different for SIHH180N60E-T1-GE3?
SIHH180N60E-T1-GE3 has a typical Coss of 56 pF measured at VDS = 100 V. However, its effective output capacitance for energy calculation-Co(er)-is 41 pF, defined as the fixed capacitance yielding the same stored energy as actual Coss while VDS rises from 0 % to 80 % of VDSS. This value directly determines turn-off loss in hard-switched applications, making Co(er) more design-relevant than raw Coss for efficiency modeling.
Is SIHH180N60E-T1-GE3 compliant with RoHS and halogen-free standards?
Yes, SIHH180N60E-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's internal Green Standard (Document #99912). The "-GE3" suffix explicitly denotes compliance with both requirements, and the device is qualified for use in environmentally regulated industrial and telecom equipment. All materials and plating meet Vishay's strict substance restrictions.
SIHH180N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1085 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 114W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH180N60E-T1-GE3 FAQ
1.How can I place an order for SIHH180N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH180N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH180N60E-T1-GE3 reliable?
The price and inventory of SIHH180N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH180N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH180N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH180N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH180N60E-T1-GE3?
SIHH180N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH180N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH180N60E-T1-GE3?
For technical support, including SIHH180N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH180N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH180N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH180N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH180N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH180N60E-T1-GE3?
All SIHH180N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH180N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH180N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH180N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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