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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH186N60EF-T1GE3

Name: SIHH186N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHH186N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH186N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH186N60EF-T1GE3.pdf

Description:: MOSFET N-CH 600V 16A PPAK 8 X 8

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Product details

Overview

SIHH186N60EF-T1GE3 from Vishay Siliconix is a 600 V, 16 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency hard-switched and resonant topologies in server power supplies and PFC stages. It features R_DS(on) = 0.168 Ω (typ), Q_g = 21 nC (typ), Co(er) = 40 pF, and avalanche-rated UIS capability.

For engineers reviewing the SIHH186N60EF-T1GE3 datasheet, SIHH186N60EF-T1GE3 pinout, SIHH186N60EF-T1GE3 application, or SIHH186N60EF-T1GE3 equivalent, key selection criteria include fast body diode recovery (t_rr = 111 ns), low effective output capacitance, Kelvin source for gate drive stability, and thermal resistance R_thJC = 0.76 °C/W for high-power density designs.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology, delivering reduced switching losses via low Q_gd/Q_g ratio (7/21 nC) and minimized Co(er) for improved hard-switching efficiency. Its Kelvin source configuration isolates power and signal return paths to suppress common-source inductance effects during high di/dt transitions.

The device integrates an optimized fast-recovery body diode (V_SD = 1.2 V at 9.5 A, t_rr = 111 ns, Q_rr = 0.6 μC) and is rated for unclamped inductive switching (E_AS = 24 mJ), enabling robust operation in continuous conduction mode (CCM) PFC and LLC resonant converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus with 50 % margin for voltage transients in telecom/server PFC
R_DS(on) typ @ 10 V	0.168 Ω - Enables <1.5 W conduction loss at 9.5 A, critical for thermally constrained 1U power supplies
Q_g typ	21 nC - Reduces gate drive power and enables use of lower-cost 1-A drivers in high-frequency (>100 kHz) SMPS
t_rr / Q_rr	111 ns / 0.6 μC - Minimizes reverse recovery loss and EMI in bridge-leg commutation
R_thJC max	1.10 °C/W - Allows >100 W power dissipation with standard heatsink interface in PowerPAK 8×8 footprint
Co(er)	40 pF - Low energy-related output capacitance improves zero-voltage switching (ZVS) initiation in resonant converters
UIS Rated	24 mJ - Withstands single-pulse inductive energy without failure, enhancing system reliability during fault events

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; requires low-inductance routing to minimize ringing and ensure stable turn-on/turn-off
Pin 2	Kelvin Source	Dedicated low-current source return for gate driver feedback-separate from high-current power source (Pin 3)-to eliminate source inductance impact on switching timing
Pin 3	Source	Main power source terminal; carries full load current (16 A continuous); connected to PCB ground plane via multiple vias
Pin 4	Drain	Main power drain terminal; electrically and thermally connected to large copper area or heatsink via exposed pad

Key Features

Feature	Design Value
4th-gen EF-series silicon	Delivers 25 % lower R_DS(on) × Q_g FOM vs. prior generation, directly reducing combined conduction + switching loss
Kelvin source configuration	Eliminates gate drive loop sensitivity to source inductance, enabling precise dV/dt control and consistent switching timing across load range
Fast body diode (t_rr = 111 ns)	Reduces dead-time loss and shoot-through risk in synchronous rectification and half-bridge configurations
Avalanche energy rating (E_AS = 24 mJ)	Provides intrinsic ruggedness for inductive load switching without requiring external snubbers or clamps
Low Co(er) = 40 pF	Enables reliable ZVS operation down to 300 kHz in LLC converters by reducing capacitive charge/discharge energy

Applications

Server Primary-Side PFC	Telecom Rectifier Modules
Use Scenario: Active boost PFC stage in 3 kW 1U rack-mount server PSU operating at 100–300 kHz. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 16 A RMS input current at 400 V DC bus. Use Value: Kelvin source ensures stable gate drive under high di/dt, while low Q_g and Co(er) reduce total losses by 8–10 % versus prior-gen 600 V MOSFETs.	Use Scenario: High-density 48 V output rectifier module with dual-phase interleaved PFC and LLC DC/DC stage. IC Role / Device Role / Timing Role: High-side switch in interleaved boost cell; operates with 150 kHz switching frequency and 12 A peak current per phase. Use Value: Fast body diode and low Q_rr suppress reverse recovery spikes, lowering EMI filter cost and improving conducted emissions compliance.
Solar PV Inverter Boost Stage	Industrial Motor Drive IGBT Gate Driver Stage
Use Scenario: DC-DC boost converter in string-level solar inverter, stepping up 300–1000 V PV array voltage to 1200 V DC link. IC Role / Device Role / Timing Role: High-voltage switch in hard-switched boost topology; subjected to high dv/dt (≥50 V/ns) and partial shading transients. Use Value: 600 V V_DS rating with 100 V/ns dv/dt immunity ensures reliable operation during lightning-induced surges and grid faults.	Use Scenario: High-speed gate driver output stage driving 1200 V/400 A IGBT modules in servo motor inverters. IC Role / Device Role / Timing Role: Low-side level-shifting switch in isolated gate driver IC output buffer; delivers 2 A peak gate current with sub-20 ns propagation delay. Use Value: Low R_DS(on) and Kelvin source enable precise gate voltage regulation under 5 A transient load, minimizing IGBT switching dispersion.

Server Primary-Side PFC

Telecom Rectifier Modules

Use Scenario: Active boost PFC stage in 3 kW 1U rack-mount server PSU operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 16 A RMS input current at 400 V DC bus.

Use Value: Kelvin source ensures stable gate drive under high di/dt, while low Q_g and Co(er) reduce total losses by 8–10 % versus prior-gen 600 V MOSFETs.

Use Scenario: High-density 48 V output rectifier module with dual-phase interleaved PFC and LLC DC/DC stage.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost cell; operates with 150 kHz switching frequency and 12 A peak current per phase.

Use Value: Fast body diode and low Q_rr suppress reverse recovery spikes, lowering EMI filter cost and improving conducted emissions compliance.

Solar PV Inverter Boost Stage

Industrial Motor Drive IGBT Gate Driver Stage

Use Scenario: DC-DC boost converter in string-level solar inverter, stepping up 300–1000 V PV array voltage to 1200 V DC link.

IC Role / Device Role / Timing Role: High-voltage switch in hard-switched boost topology; subjected to high dv/dt (≥50 V/ns) and partial shading transients.

Use Value: 600 V V_DS rating with 100 V/ns dv/dt immunity ensures reliable operation during lightning-induced surges and grid faults.

Use Scenario: High-speed gate driver output stage driving 1200 V/400 A IGBT modules in servo motor inverters.

IC Role / Device Role / Timing Role: Low-side level-shifting switch in isolated gate driver IC output buffer; delivers 2 A peak gate current with sub-20 ns propagation delay.

Use Value: Low R_DS(on) and Kelvin source enable precise gate voltage regulation under 5 A transient load, minimizing IGBT switching dispersion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, TO-247; R_DS(on) = 0.055 Ω; no Kelvin source; higher Q_g = 75 nC	Requires larger heatsink and gate driver; suited for lower-frequency (<75 kHz), higher-current industrial SMPS	Choose when board space allows TO-247 and peak current exceeds 30 A; avoid where layout inductance or high-frequency efficiency is critical
IXFH30N60X	600 V, 30 A, TO-247; R_DS(on) = 0.125 Ω; Q_g = 42 nC; standard source, no Kelvin	Lacks fast body diode optimization (t_rr > 250 ns); higher switching loss in PFC	Select for cost-sensitive, non-resonant applications where diode recovery is managed externally; not recommended for ZVS or high-di/dt PFC

Compared with STW62N60M2 and IXFH30N60X, SIHH186N60EF-T1GE3 offers superior high-frequency efficiency due to its Kelvin source, lower Q_g, and fast body diode-making it optimal for compact, high-power-density server and telecom PSUs where layout parasitics and thermal constraints dominate design trade-offs.

Availability

SIHH186N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for SIHH186N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The EF Series targets high-frequency, high-efficiency power conversion systems-including datacenter PSUs, 5G infrastructure, and renewable energy inverters-where low switching loss, fast body diode response, and thermal performance are decisive.

FAQ

What is the maximum continuous drain current rating for SIHH186N60EF-T1GE3 at 100 °C case temperature?

The SIHH186N60EF-T1GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 8 × 8 package and ensures safe operation under sustained high-power conditions without exceeding T_J = 150 °C. The SIHH186N60EF-T1GE3 must be mounted on a thermally optimized PCB with adequate copper area and/or heatsinking to maintain this rating.

Does SIHH186N60EF-T1GE3 have a Kelvin source, and how is it implemented physically?

Yes, SIHH186N60EF-T1GE3 incorporates a dedicated Kelvin source terminal (Pin 2), physically isolated from the main power source (Pin 3). This configuration separates the gate drive return path from the high-current source path, eliminating the voltage drop across source inductance during switching transitions. The SIHH186N60EF-T1GE3 uses this to maintain precise gate control under high di/dt, especially critical in high-frequency PFC and LLC converters.

What is the typical reverse recovery time (t_rr) of the body diode in SIHH186N60EF-T1GE3, and under what test conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHH186N60EF-T1GE3 body diode is 111 ns, measured at T_J = 25 °C, I_F = I_S = 9.5 A, di/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and reflects the device's optimized fast-recovery structure-critical for minimizing commutation loss in bridge-leg topologies. The SIHH186N60EF-T1GE3 achieves this with Q_rr = 0.6 μC and I_RRM = 10 A.

Can SIHH186N60EF-T1GE3 be used in zero-voltage switching (ZVS) circuits, and which parameter most supports that capability?

Yes, SIHH186N60EF-T1GE3 is well-suited for ZVS operation, primarily due to its low effective output capacitance Co(er) = 40 pF (energy-related). This parameter determines the energy stored in C_oss during voltage transition and directly impacts the minimum required resonant inductance and achievable ZVS range. The SIHH186N60EF-T1GE3's Co(er) is 40 % lower than comparable 600 V MOSFETs, enabling reliable ZVS initiation at higher frequencies and lighter loads in LLC and phase-shifted full-bridge topologies.

Is SIHH186N60EF-T1GE3 rated for unclamped inductive switching (UIS), and what is its single-pulse avalanche energy?

Yes, SIHH186N60EF-T1GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 24 mJ, tested per JEDEC JESD24-1. This rating is verified at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.3 A. The SIHH186N60EF-T1GE3's UIS capability provides intrinsic ruggedness against inductive turn-off transients-reducing need for external clamping components in motor drives and PFC circuits.

SIHH186N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH186N60EF-T1GE3 FAQ

1.How can I place an order for SIHH186N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH186N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH186N60EF-T1GE3 reliable?

The price and inventory of SIHH186N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH186N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHH186N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH186N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH186N60EF-T1GE3?

SIHH186N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH186N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH186N60EF-T1GE3?

For technical support, including SIHH186N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH186N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHH186N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH186N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH186N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHH186N60EF-T1GE3?

All SIHH186N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH186N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH186N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHH186N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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