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Vishay Siliconix SIHH20N50E-T1-GE3
- Part No.:
- SIHH20N50E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH20N50E-T1-GE3.pdf
- Description:
- MOSFET N-CH 500V 22A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:5,445
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Product details
Overview
SIHH20N50E-T1-GE3 from Vishay Siliconix is a 500 V, 22 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers RDS(on) = 0.147 Ω at VGS = 10 V, Qg = 70 nC max, and avalanche-rated EAS = 286 mJ - enabling reduced conduction and switching losses in telecom rectifiers and solar inverters.
For engineers reviewing the SIHH20N50E-T1-GE3 datasheet, SIHH20N50E-T1-GE3 pinout, SIHH20N50E-T1-GE3 application, or SIHH20N50E-T1-GE3 equivalent, key selection criteria include its Kelvin-source low-noise gate drive capability, 500 V blocking rating with 70 V/ns dV/dt immunity, and thermal resistance RthJC = 0.72 °C/W for high-power density designs.
Technical Context
This device implements a trench-gate, superjunction MOSFET architecture with integrated Kelvin source terminal to decouple power and signal return paths. Its low Ciss (2063 pF typ) and ultra-low Qgd/Qg ratio (23/56 nC typ) minimize Miller-induced turn-off delay and improve hard-switching robustness at 400 V bus voltages.
The MOSFET supports unclamped inductive switching (UIS) up to 286 mJ and features a body diode with trr = 542 ns max and Qrr = 7.0 μC, enabling controlled commutation in bridge-leg topologies. Its VGS(th) range of 2.0–4.0 V ensures stable enhancement-mode operation across temperature and process variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V DC bus with 25 % margin for transient overvoltage in industrial PFC and PV inverters |
| RDS(on) max @ 10 V | 0.147 Ω - limits conduction loss to ≤ 33 W at 10 A continuous drain current in TO-220-equivalent thermal envelope |
| Qg max | 70 nC - enables <100 ns total switching time with 9.1 Ω gate resistor, reducing dynamic loss in 100–300 kHz SMPS |
| EAS | 286 mJ - sustains single-pulse inductive energy without failure during startup or fault conditions in motor drives |
| RthJC max | 0.72 °C/W - allows 174 W power dissipation with ≤ 125 °C junction rise above 25 °C case, supporting compact heatsink design |
| dV/dt immunity | 70 V/ns - prevents false turn-on in high-di/dt half-bridge configurations with fast IGBT or SiC co-drivers |
| Body diode VSD | 1.2 V max @ 10 A - minimizes reverse recovery loss contribution in synchronous rectification and bidirectional converters |
Pinout & Package
SIHH20N50E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for low-inductance thermal path and four terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), Drain (Pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Standard control input; connects to gate driver output with minimal trace inductance to suppress ringing |
| Pin 2 | Kelvin Source | Reference return for gate drive loop only - isolates gate voltage sensing from high di/dt source current path |
| Pin 3 | Power Source | Main current return path for load current; routed separately from Kelvin source to preserve gate control stability |
| Pin 4 | Drain | High-side switching node; soldered to PCB copper pour for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Eliminates gate drive loop coupling to source inductance, enabling stable 100+ kHz operation without external gate resistors |
| Avalanche energy rating (EAS) | 286 mJ single-pulse - permits reliable operation under inductive load switching without snubber circuits |
| Low Qg/RDS(on) FOM | 70 nC × 0.147 Ω = 10.3 - improves trade-off between switching speed and conduction loss vs. standard superjunction MOSFETs |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for automotive and industrial end equipment requiring green compliance |
| Enhancement-mode operation | VGS(th) = 2.0–4.0 V - ensures guaranteed off-state at 0 V gate bias and compatibility with 3.3 V/5 V logic-level drivers |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with interleaved PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost PFC circuit operating at 100 kHz. Use Value: Kelvin source reduces gate oscillation during 100 A peak di/dt events, improving efficiency by 0.8 % over non-Kelvin alternatives. |
Use Scenario: DC-link switching in string-level 10 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge inverter stage handling 450–800 V DC input with 16 kHz PWM. Use Value: 500 V rating and 70 V/ns dV/dt immunity prevent spurious turn-on during fast voltage transitions in transformerless inverters. |
| Industrial Motor Drive | LED Streetlight Driver |
Use Scenario: Inverter leg in 7.5 kW HVAC compressor drive with field-oriented control (FOC). IC Role / Device Role / Timing Role: Low-side switching device in three-phase IGBT gate driver auxiliary supply with 20 kHz switching. Use Value: Avalanche rating supports safe demagnetization of motor windings during emergency stop, eliminating need for external clamps. |
Use Scenario: Buck-boost LED driver for 150 W streetlight with constant-current regulation and DALI dimming. IC Role / Device Role / Timing Role: Main switching transistor in high-frequency (250 kHz) flyback-derived topology with primary-side sensing. Use Value: Low Ciss and Qgd reduce switching loss by 35 % versus standard 500 V MOSFETs, enabling >94 % efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V rating, RDS(on) = 0.065 Ω, no Kelvin source, TO-247 package | Higher voltage margin but larger footprint and higher gate charge (110 nC) | Preferred where 600 V derating is required and board space permits through-hole mounting |
| IXFH32N50P | 500 V rating, RDS(on) = 0.15 Ω, TO-247 package, no Kelvin source, higher Qg (105 nC) | Larger thermal resistance (RthJC = 0.85 °C/W) and slower switching | Suitable for lower-frequency (<50 kHz) applications where cost sensitivity outweighs efficiency targets |
Compared with STW48N60M2 and IXFH32N50P, SIHH20N50E-T1-GE3 offers superior high-frequency efficiency via Kelvin source and lower Qg, making it optimal for compact, air-cooled 100–300 kHz power stages where layout parasitics dominate gate control integrity.
Availability
SIHH20N50E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SIHH20N50E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The E Series Power MOSFETs, including SIHH20N50E-T1-GE3, were engineered for high-efficiency, high-reliability switch-mode power conversion in telecom, industrial, and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIHH20N50E-T1-GE3 at 100 °C case temperature?
The SIHH20N50E-T1-GE3 has a continuous drain current rating of 14 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 22 A rating at 25 °C, based on its 1.4 W/°C linear derating factor and RthJC = 0.72 °C/W. Designers must ensure heatsink design maintains case temperature ≤ 100 °C to sustain this current in continuous operation.
Does SIHH20N50E-T1-GE3 support gate drive from a 5 V microcontroller output?
No - SIHH20N50E-T1-GE3 requires VGS = 10 V for full RDS(on) specification (0.147 Ω), and its VGS(th) minimum is 2.0 V. A 5 V logic signal may partially enhance the channel but will result in significantly elevated RDS(on) (>0.3 Ω), excessive conduction loss, and thermal instability. A dedicated gate driver IC with 10–15 V output is required for reliable operation of SIHH20N50E-T1-GE3.
How does the Kelvin source configuration in SIHH20N50E-T1-GE3 improve switching performance?
The Kelvin source in SIHH20N50E-T1-GE3 separates the gate drive return path (Pin 2) from the main power source current path (Pin 3), eliminating voltage drop across source inductance from affecting gate-to-source voltage. This prevents false turn-off during high di/dt events and enables tighter control of switching timing - critical for achieving consistent 22 ns turn-on delay and 41 ns rise time in high-frequency SMPS using SIHH20N50E-T1-GE3.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH20N50E-T1-GE3?
The body diode of SIHH20N50E-T1-GE3 has a typical reverse recovery charge Qrr of 3.5 μC and a maximum of 7.0 μC at TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs, and VR = 25 V. This parameter directly impacts commutation loss in synchronous rectification and half-bridge topologies - lower Qrr reduces diode-related switching loss and EMI generation when SIHH20N50E-T1-GE3 operates in bidirectional modes.
Is SIHH20N50E-T1-GE3 suitable for use in automotive under-hood applications?
SIHH20N50E-T1-GE3 is not AEC-Q101 qualified and is rated for TJ = –55 to +150 °C, which exceeds typical under-hood ambient requirements. However, Vishay does not specify automotive-grade reliability testing, stress qualification, or PPAP documentation for SIHH20N50E-T1-GE3. For automotive applications, designers should select Vishay's AEC-Q101-qualified PowerPAK® variants or consult Vishay's automotive product line - SIHH20N50E-T1-GE3 is intended for industrial, telecom, and renewable energy systems.
SIHH20N50E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 147mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2063 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH20N50E-T1-GE3 FAQ
1.How can I place an order for SIHH20N50E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH20N50E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH20N50E-T1-GE3 reliable?
The price and inventory of SIHH20N50E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH20N50E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH20N50E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH20N50E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH20N50E-T1-GE3?
SIHH20N50E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH20N50E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH20N50E-T1-GE3?
For technical support, including SIHH20N50E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH20N50E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH20N50E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH20N50E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH20N50E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH20N50E-T1-GE3?
All SIHH20N50E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH20N50E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH20N50E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH20N50E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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