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Vishay Siliconix SIHH21N60EF-T1-GE3
- Part No.:
- SIHH21N60EF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH21N60EF-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 19A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:4,506
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Product details
Overview
SIHH21N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency SMPS and PFC stages. It delivers RDS(on) = 0.161 Ω (typ.) at VGS = 10 V, Qg = 57 nC (typ.), and avalanche-rated EAS = 226 mJ - enabling reduced conduction and switching losses in telecom rectifiers and solar inverters.
For engineers reviewing the SIHH21N60EF-T1-GE3 datasheet, SIHH21N60EF-T1-GE3 pinout, SIHH21N60EF-T1-GE3 application, or SIHH21N60EF-T1-GE3 equivalent, key selection criteria include its fast body diode (trr = 137 ns typ.), low Ciss = 2035 pF, Kelvin-source noise immunity, and 600 V VDS rating for high-voltage DC-link switching.
Technical Context
This device belongs to Vishay's E Series high-voltage MOSFETs featuring integrated Kelvin source terminal to isolate gate drive return path from high-current source return, minimizing gate loop inductance and improving switching stability under high dI/dt. Its low RDS(on) × Qg figure-of-merit (≈9.1) targets efficiency-critical hard-switched topologies.
The MOSFET supports unclamped inductive switching (UIS) up to 226 mJ and exhibits dV/dt ruggedness of 70 V/ns at TJ = 125 °C. Its body diode has VSD = 0.9 V (typ.) at IS = 11 A and Qrr = 0.8 μC (typ.), enabling reliable synchronous rectification and bidirectional current handling in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC-link systems with 50 % safety margin for voltage transients in PFC and PV inverters |
| RDS(on) typ. @ 10 V | 0.161 Ω - enables ≤2.0 W conduction loss at 11 A continuous drain current in thermally managed designs |
| Qg max | 86 nC - determines gate driver power requirement and switching speed; lower than legacy 600 V MOSFETs by ~30 % |
| trr typ. | 137 ns - reduces diode recovery loss and EMI in hard-switched converters operating up to 100 kHz |
| EAS rated | 226 mJ - allows safe operation during transient overloads without external snubbers in UPS and server PSUs |
| RthJC max | 0.72 °C/W - enables ≥150 W power dissipation with standard heatsink interface in PowerPAK 8 × 8 footprint |
| VGS(th) range | 2.0–4.0 V - ensures robust turn-on with 10 V gate drive while avoiding spurious conduction near 0 V |
Pinout & Package
SIHH21N60EF-T1-GE3 uses the PowerPAK® 8 mm × 8 mm surface-mount package with exposed drain pad on bottom side for thermal performance. Pin numbering follows top-side marking: Pin 1 = Gate, Pin 2 = Kelvin Source, Pin 3 = Source, Pin 4 = Drain (tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input; routed separately from power source to minimize Miller coupling |
| Pin 2 | Kelvin Source | Dedicated low-inductance gate return path - isolates gate loop from high di/dt source current |
| Pin 3 | Source | Main power source terminal; carries full load current and connects to PCB ground plane |
| Pin 4 | Drain | High-voltage output node; electrically and thermally connected to exposed copper tab on bottom |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Reduces gate loop inductance by >50 % vs. standard 3-pin SO-8, suppressing oscillation during fast switching |
| Avalanche energy rating (EAS) | 226 mJ single-pulse - eliminates need for external clamping in inductive load switching applications |
| Low Ciss (2035 pF) | Minimizes gate drive power and improves controllability in high-frequency (>75 kHz) PFC designs |
| Fast body diode (trr = 137 ns) | Enables efficient freewheeling in half-bridge LLC and phase-shifted ZVS topologies without external Schottky |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
|
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage primary switch handling 400 V DC-link, switching at 100–150 kHz. Use Value: Low Qg and Kelvin source reduce gate drive loss and improve light-load efficiency by 0.8 % vs. non-Kelvin alternatives. |
Use Scenario: DC-link switching stage in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg 600 V switch in H-bridge leg, subjected to repetitive 600 V blocking and 15 A RMS current. Use Value: 226 mJ EAS rating prevents failure during grid fault-induced DC overvoltage events. |
| Industrial Motor Drive | LED Streetlight Driver |
|
Use Scenario: Inverter output stage in 7.5 kW HVAC variable frequency drive with IGBT-like bus voltage. IC Role / Device Role / Timing Role: Phase-leg high-side switch in three-phase inverter, conducting 19 A peak with 10 kHz PWM. Use Value: Fast body diode (trr = 137 ns) minimizes shoot-through risk and reduces heat sink size by 25 %. |
Use Scenario: Buck-boost PFC + isolated flyback stage in 150 W outdoor LED streetlight with wide AC input (90–305 VAC). IC Role / Device Role / Timing Role: Critical PFC switch operating in continuous conduction mode (CCM) at 65 kHz. Use Value: RDS(on) = 0.161 Ω keeps junction temperature <125 °C at full load without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.065 Ω, no Kelvin source, TO-247 package | Higher current rating but larger footprint and higher Qg (120 nC); requires mechanical mounting and heatsink | Preferred for high-power industrial inverters where thermal mass outweighs layout density constraints |
| IXFH32N60P | 600 V, 32 A, RDS(on) = 0.135 Ω, TO-247, no Kelvin source, higher Ciss (2800 pF) | Lower RDS(on) but slower switching due to higher capacitance; lacks avalanche rating | Used in cost-sensitive 1–2 kW SMPS where EAS margin is less critical than conduction loss |
Compared with STW62N60M2 and IXFH32N60P, SIHH21N60EF-T1-GE3 offers superior gate drive efficiency and layout compactness via Kelvin source and PowerPAK 8 × 8, making it optimal for space-constrained, high-frequency PFC and telecom power supplies where switching loss dominates total loss.
Availability
SIHH21N60EF-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for SIHH21N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIHH21N60EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switching in energy-efficient power conversion systems including data center PSUs and renewable energy inverters.
FAQ
What is the maximum continuous drain current rating for SIHH21N60EF-T1-GE3 at 100 °C case temperature?
The SIHH21N60EF-T1-GE3 supports 12 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 8 × 8 package and ensures safe operation when mounted on a 2-layer PCB with 2 oz copper and minimal thermal relief. At TC = 25 °C, the rating increases to 19 A.
Does SIHH21N60EF-T1-GE3 have a Kelvin source connection, and how is it implemented physically?
Yes, SIHH21N60EF-T1-GE3 features a dedicated Kelvin source terminal (Pin 2), separate from the main source (Pin 3). This design isolates the gate drive return path from high-current source return, reducing gate loop inductance and preventing false turn-on during fast switching. The Kelvin source must be connected directly to the gate driver ground, not to the power ground plane.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH21N60EF-T1-GE3, and why does it matter?
The SIHH21N60EF-T1-GE3 body diode has Qrr = 0.8 μC (typ.) at TJ = 25 °C, IF = 11 A, and dI/dt = 100 A/μs. This low value reduces recovery loss and associated EMI in hard-switched topologies like boost PFC and half-bridge converters, directly improving system efficiency and simplifying EMI filter design compared to devices with Qrr > 2 μC.
Can SIHH21N60EF-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SIHH21N60EF-T1-GE3 is fully rated for unclamped inductive switching (UIS) with EAS = 226 mJ (single pulse, TJ = 25 °C). This rating is validated per JEDEC JESD24-1 and allows safe operation during transient overloads - such as transformer saturation or short-circuit events - without requiring external avalanche clamping components in well-designed power stages.
What is the gate threshold voltage range for SIHH21N60EF-T1-GE3, and how does it affect drive circuit design?
The SIHH21N60EF-T1-GE3 has VGS(th) = 2.0–4.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious conduction near 0 V. This range avoids the risk of partial enhancement seen in logic-level MOSFETs and eliminates need for negative gate bias - simplifying driver design in high-noise industrial environments.
SIHH21N60EF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 185mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2035 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH21N60EF-T1-GE3 FAQ
1.How can I place an order for SIHH21N60EF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH21N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH21N60EF-T1-GE3 reliable?
The price and inventory of SIHH21N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH21N60EF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH21N60EF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH21N60EF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH21N60EF-T1-GE3?
SIHH21N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH21N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH21N60EF-T1-GE3?
For technical support, including SIHH21N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH21N60EF-T1-GE3 requirements.
6.How does Aetrix verify that SIHH21N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH21N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH21N60EF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH21N60EF-T1-GE3?
All SIHH21N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH21N60EF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH21N60EF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH21N60EF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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