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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH21N60E-T1-GE3

Name: SIHH21N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH21N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH21N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH21N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 20A PPAK 8 X 8

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Product details

Overview

SIHH21N60E-T1-GE3 from Vishay Siliconix is a 600 V, 20 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, R_DS(on) = 0.153 Ω (typ) at V_GS = 10 V, Q_g = 55 nC (typ), and avalanche-rated (E_AS = 226 mJ). It delivers low conduction and switching losses for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHH21N60E-T1-GE3 datasheet, SIHH21N60E-T1-GE3 pinout, SIHH21N60E-T1-GE3 application, or SIHH21N60E-T1-GE3 equivalent, key selection criteria include its Kelvin-source layout for gate noise immunity, ultra-low Q_g/C_iss enabling high-frequency operation, and 600 V blocking capability validated for 480 V bus designs in telecom rectifiers and solar inverters.

Technical Context

This device uses a trench-gate, super-junction structure optimized for high-voltage switching with minimized figure-of-merit (R_DS(on) × Q_g). Its Kelvin source terminal isolates gate drive return from high-current source paths, reducing gate oscillation during fast dI/dt transitions up to 100 A/μs.

The MOSFET supports hard-switched topologies including continuous conduction mode (CCM) PFC and LLC resonant converters. Its 70 V/ns dV/dt rating at T_J = 125 °C and 297 ns typical reverse recovery time (t_rr) enable robust body diode commutation in bidirectional and synchronous rectifier configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 480 V AC rectified bus with 25 % margin for surge and ripple.
R_DS(on) typ @ 10 V	0.153 Ω - Enables ≤ 1.9 W conduction loss at 11 A DC, critical for thermal management in compact SMPS.
Q_g typ	55 nC - Reduces gate driver power demand and enables >300 kHz switching without excessive driver heating.
C_iss	2015 pF - Low input capacitance improves voltage-mode control loop stability in high-gain PFC controllers.
E_AS	226 mJ - Rated unclamped inductive switching energy ensures reliability in no-snubber flyback or boost designs.
t_rr	297 ns - Fast body diode recovery minimizes cross-conduction loss in half-bridge synchronous rectification.
R_thJC max	0.72 °C/W - Enables ≥ 100 W power dissipation with standard heatsinking in industrial motor drives.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate terminal; connects to driver IC output; requires <1.3 Ω gate resistance for optimal turn-on/off timing.
Pin 2	Kelvin Source	Dedicated low-inductance gate return path; must be routed separately from high-current source (Pin 3) to suppress gate ringing.
Pin 3	Source	Main current return path for load current; connects to PCB power plane or low-impedance source trace.
Pin 4	Drain	High-side switch node; electrically connected to exposed copper pad on bottom of package for thermal conduction.

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return from power source current path, reducing gate voltage overshoot by >40 % under 50 A/μs dI/dt.
Avalanche energy rating (E_AS)	226 mJ single-pulse - Eliminates need for external clamping circuits in inductive load switching applications.
Low C_iss / Q_g ratio	2015 pF / 55 nC = 36.6 pF/nC - Improves Miller immunity and reduces required gate drive current for 1 MHz-class operation.
Ultra-low Q_gd	20 nC - Minimizes Miller plateau duration, enabling faster voltage transition and lower switching loss in hard-switched converters.
150 °C max junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., outdoor PV inverters) without derating below 12 A.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW CCM boost PFC stage operating at 100–120 kHz. IC Role / Device Role / Timing Role: High-voltage switching element handling 20 A RMS input current with zero-voltage switching assist. Use Value: Kelvin source and 55 nC Q_g reduce gate drive losses by 35 % versus non-Kelvin equivalents, improving system efficiency from 96.2 % to 96.7 %.	Use Scenario: Output rectification in 48 V/50 A telecom secondary-side LLC resonant converter. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals. Use Value: 0.153 Ω R_DS(on) cuts conduction loss by 60 % vs. 40 V Schottky, reducing thermal load on 2-oz copper planes.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in three-phase string inverter H-bridge stage handling 600 V DC bus with 15 A peak phase current. IC Role / Device Role / Timing Role: High-side IGBT replacement in 16 kHz PWM-controlled inverter leg. Use Value: 226 mJ E_AS withstands inductive kickback during fault shutdown, eliminating need for external snubbers.	Use Scenario: Brake chopper switch in 7.5 kW VFD regenerative braking circuit dissipating 3 kW peak power. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events on DC bus. Use Value: 0.72 °C/W R_thJC allows direct mounting to aluminum heatsink, achieving <95 °C junction temp at 3 kW pulsed duty.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CCM boost PFC stage operating at 100–120 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element handling 20 A RMS input current with zero-voltage switching assist.

Use Value: Kelvin source and 55 nC Q_g reduce gate drive losses by 35 % versus non-Kelvin equivalents, improving system efficiency from 96.2 % to 96.7 %.

Use Scenario: Output rectification in 48 V/50 A telecom secondary-side LLC resonant converter.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 0.153 Ω R_DS(on) cuts conduction loss by 60 % vs. 40 V Schottky, reducing thermal load on 2-oz copper planes.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in three-phase string inverter H-bridge stage handling 600 V DC bus with 15 A peak phase current.

IC Role / Device Role / Timing Role: High-side IGBT replacement in 16 kHz PWM-controlled inverter leg.

Use Value: 226 mJ E_AS withstands inductive kickback during fault shutdown, eliminating need for external snubbers.

Use Scenario: Brake chopper switch in 7.5 kW VFD regenerative braking circuit dissipating 3 kW peak power.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events on DC bus.

Use Value: 0.72 °C/W R_thJC allows direct mounting to aluminum heatsink, achieving <95 °C junction temp at 3 kW pulsed duty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, no Kelvin source, TO-247 package	Higher current rating but larger footprint and no gate noise mitigation; requires external gate resistor tuning for EMI control	Preferred for higher-current, lower-frequency (<100 kHz) industrial inverters where layout space permits TO-247
IXFH32N60P	600 V, 32 A, R_DS(on) = 0.125 Ω, TO-247, no Kelvin source, higher Q_g = 110 nC	Higher gate charge increases driver losses; lacks Kelvin configuration, limiting high-dI/dt reliability in dense layouts	Suitable for cost-sensitive telecom PSUs where board area is less constrained and gate drive strength is available

Compared with STW48N60M2 and IXFH32N60P, SIHH21N60E-T1-GE3 offers superior high-frequency efficiency via Kelvin source and lower Q_g, making it optimal for space-constrained, high-density PFC and inverter modules where gate noise and thermal density are critical.

Availability

SIHH21N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHH21N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHH21N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-frequency switching in energy-efficient power conversion systems including data center infrastructure and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHH21N60E-T1-GE3 at 100 °C case temperature?

The SIHH21N60E-T1-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 20 A rating at 25 °C case temperature, based on a linear derating factor of 1.4 W/°C and R_thJC = 0.72 °C/W. Designers must verify PCB copper area and heatsinking to sustain this current in real-world conditions.

Does SIHH21N60E-T1-GE3 support logic-level gate drive?

No, SIHH21N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.153 Ω. Driving it with 5 V logic signals results in significantly higher on-resistance and conduction loss; a dedicated 10–15 V gate driver is required for optimal performance of SIHH21N60E-T1-GE3.

How does the Kelvin source configuration in SIHH21N60E-T1-GE3 improve switching behavior?

The Kelvin source in SIHH21N60E-T1-GE3 provides a dedicated low-inductance return path for gate drive current, decoupling it from high di/dt source current flow through Pin 3. This reduces gate voltage oscillation during fast switching transients, improves Miller immunity, and enables reliable operation at dI/dt rates up to 100 A/μs-critical for high-frequency PFC and resonant converters using SIHH21N60E-T1-GE3.

What is the typical reverse recovery time (t_rr) of the body diode in SIHH21N60E-T1-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHH21N60E-T1-GE3 is 297 ns, measured at T_J = 25 °C with I_F = I_S = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter is essential for evaluating commutation losses in synchronous rectification and half-bridge topologies where SIHH21N60E-T1-GE3 operates in bidirectional conduction modes.

Is SIHH21N60E-T1-GE3 suitable for use in automotive under-hood applications?

No, SIHH21N60E-T1-GE3 is not qualified for automotive under-hood applications. While its operating junction temperature range extends to +150 °C, it lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed PPAP documentation. It is designed for industrial, telecom, and computing power systems-not safety-critical or high-reliability automotive environments requiring SIHH21N60E-T1-GE3 to meet ISO/TS 16949 or similar standards.

SIHH21N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 176mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2015 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH21N60E-T1-GE3 FAQ

1.How can I place an order for SIHH21N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH21N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH21N60E-T1-GE3 reliable?

The price and inventory of SIHH21N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH21N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH21N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH21N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH21N60E-T1-GE3?

SIHH21N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH21N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH21N60E-T1-GE3?

For technical support, including SIHH21N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH21N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH21N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH21N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH21N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH21N60E-T1-GE3?

All SIHH21N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH21N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH21N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH21N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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