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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH21N65EF-T1-GE3

Name: SIHH21N65EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH21N65EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH21N65EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH21N65EF-T1-GE3.pdf

Description:: MOSFET N-CH 650V 19.8A PPAK 8X8

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Product details

Overview

SIHH21N65EF-T1-GE3 from Vishay Siliconix is a 650 V, 19.8 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.157 Ω (typ) at V_GS = 10 V, Q_g = 68 nC (typ), and features fast body diode recovery (t_rr = 145 ns typ) for reduced switching loss in hard-switched topologies.

For engineers reviewing the SIHH21N65EF-T1-GE3 datasheet, SIHH21N65EF-T1-GE3 pinout, SIHH21N65EF-T1-GE3 application, or SIHH21N65EF-T1-GE3 equivalent, key selection criteria include its 650 V avalanche-rated drain-source breakdown, low C_iss (2396 pF), Kelvin source configuration for gate drive stability, and E-series fast-body-diode performance validated for telecom rectifiers and solar PV inverters.

Technical Context

This device implements a planar high-voltage trench-gated structure with integrated fast-recovery body diode, enabling robust unclamped inductive switching (E_AS = 353 mJ). Its Kelvin source (Pin 2) separates power and signal return paths to minimize gate loop inductance and suppress oscillation during high dI/dt transitions.

The MOSFET operates with V_GS(th) = 2.0–4.0 V and supports gate drive up to ±30 V. Thermal resistance R_thJC = 0.51 °C/W (typ) enables high-power density mounting on copper-clad PCBs, while dV/dt immunity of 70 V/ns (T_J = 125 °C) ensures noise resilience in noisy SMPS environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V AC input rectified systems with 20 % margin for voltage transients in PFC and DC-DC stages.
R_DS(on) typ @ 10 V	0.157 Ω - Enables ≤ 20 W conduction loss at 11 A continuous current in TO-220-equivalent thermal footprint.
Q_g max	102 nC - Low gate charge reduces driver power requirement and allows use of cost-effective 1-A gate drivers.
t_rr typ	145 ns - Fast body diode recovery minimizes reverse recovery loss and EMI in bridge-leg and synchronous rectifier configurations.
E_AS	353 mJ - Rated single-pulse avalanche energy supports reliable operation under inductive load turn-off stress without snubbers.
R_thJC typ	0.51 °C/W - Enables >150 W dissipation with standard heatsink interface, supporting compact 1–3 kW server PSU designs.
C_iss	2396 pF - Low input capacitance improves high-frequency switching efficiency and reduces Miller-induced shoot-through risk.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires <10 Ω series resistance near driver to damp ringing from low-inductance layout.
Pin 2	Kelvin Source	Dedicated low-inductance sense path for gate drive reference; must be routed separately from power source return to avoid gate overdrive.
Pin 3	Source	Main power return path; connects to PCB ground plane and carries full load current (19.8 A continuous).
Pin 4	Drain	High-voltage power input/output node; electrically and thermally connected to large copper area via bottom-exposed pad.

Key Features

Feature	Design Value
Fast body diode	t_rr = 145 ns (typ), Q_rr = 0.9 μC (typ) - Reduces dead-time losses and improves light-load efficiency in half-bridge PFC.
Kelvin source configuration	Separate Pin 2 for gate-source reference - Eliminates source inductance impact on gate drive, enabling stable 100+ kHz switching.
Avalanche energy rating	E_AS = 353 mJ - Allows safe operation under inductive turn-off without external clamping in motor drives and welders.
Low figure-of-merit	R_DS(on) × Q_g = 10.7 Ω·nC (typ) - Balances conduction and switching loss for optimal 65–100 kHz SMPS efficiency.
High dV/dt immunity	70 V/ns at T_J = 125 °C - Prevents false turn-on in high-noise industrial environments with fast-rising bus voltages.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 1–3 kW 80 PLUS Titanium-certified AC/DC front-end with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus, switching at 100–200 kHz with zero-voltage transition assistance. Use Value: Kelvin source and low Q_g enable precise gate control and <1.5 % efficiency gain over standard MOSFETs at 50 % load.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V DC from photovoltaic arrays to 230 V AC grid. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter legs, operating at 16–20 kHz with unipolar PWM. Use Value: 650 V rating and 353 mJ E_AS allow direct replacement without snubber redesign, reducing BOM count by one component per leg.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter output stage for 3–7.5 HP variable frequency drives powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge, conducting 19.8 A RMS with 100 ns–1 μs dead time. Use Value: Fast t_rr and low Q_rr reduce shoot-through risk and eliminate need for external anti-parallel SiC Schottky diodes.	Use Scenario: Resonant half-bridge controller in electronic ballasts driving 40–100 W HID lamps with high-voltage ignition pulses. IC Role / Device Role / Timing Role: Main switching transistor sustaining 600 V spikes during lamp strike and regulating lamp current at 20–60 kHz. Use Value: 650 V V_DS rating and 10 V gate threshold ensure reliable ignition pulse tolerance and stable dimming down to 10 % intensity.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 1–3 kW 80 PLUS Titanium-certified AC/DC front-end with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus, switching at 100–200 kHz with zero-voltage transition assistance.

Use Value: Kelvin source and low Q_g enable precise gate control and <1.5 % efficiency gain over standard MOSFETs at 50 % load.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V DC from photovoltaic arrays to 230 V AC grid.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter legs, operating at 16–20 kHz with unipolar PWM.

Use Value: 650 V rating and 353 mJ E_AS allow direct replacement without snubber redesign, reducing BOM count by one component per leg.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter output stage for 3–7.5 HP variable frequency drives powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge, conducting 19.8 A RMS with 100 ns–1 μs dead time.

Use Value: Fast t_rr and low Q_rr reduce shoot-through risk and eliminate need for external anti-parallel SiC Schottky diodes.

Use Scenario: Resonant half-bridge controller in electronic ballasts driving 40–100 W HID lamps with high-voltage ignition pulses.

IC Role / Device Role / Timing Role: Main switching transistor sustaining 600 V spikes during lamp strike and regulating lamp current at 20–60 kHz.

Use Value: 650 V V_DS rating and 10 V gate threshold ensure reliable ignition pulse tolerance and stable dimming down to 10 % intensity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	600 V, R_DS(on) = 0.055 Ω, Q_g = 120 nC, TO-247 package, no Kelvin source	Higher conduction efficiency but larger footprint and no Kelvin sensing; requires gate resistor tuning for dV/dt immunity	Preferred for lower-frequency (<50 kHz), higher-current (>25 A) industrial inverters where layout inductance is controlled.
IXFH60N60X3	600 V, R_DS(on) = 0.042 Ω, Q_g = 105 nC, TO-247, ultra-low Q_gd/Q_g ratio	Better Miller immunity but lacks fast body diode; requires external antiparallel diode for bidirectional current	Optimal for ZVS/ZCS resonant converters where body diode conduction is avoided entirely.

Compared with STW65N60DM6 and IXFH60N60X3, SIHH21N65EF-T1-GE3 trades slightly higher R_DS(on) for integrated fast body diode, Kelvin source, and surface-mount compatibility-making it uniquely suited for space-constrained, high-frequency PFC and inverter designs requiring self-contained switching behavior.

Availability

SIHH21N65EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHH21N65EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SIHH21N65EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-density switch-mode power conversion in telecom, server, and renewable energy systems where fast switching and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHH21N65EF-T1-GE3 at 100 °C case temperature?

The SIHH21N65EF-T1-GE3 supports 12.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 8 × 8 package and ensures long-term reliability when mounted on ≥2 oz copper with adequate thermal vias. The full 19.8 A rating applies only at T_C = 25 °C.

Does SIHH21N65EF-T1-GE3 include an integrated body diode, and what are its key recovery characteristics?

Yes, SIHH21N65EF-T1-GE3 integrates a fast-recovery body diode rated for 19.8 A continuous forward current. Its reverse recovery time t_rr is 145 ns (typ) at T_J = 25 °C, with Q_rr = 0.9 μC (typ) and peak reverse recovery current I_RRM = 11.6 A. These values are measured under standardized conditions (I_F = 11 A, dI/dt = 100 A/μs, V_R = 25 V) and confirm suitability for hard-switched PFC and inverter freewheeling.

How does the Kelvin source (Pin 2) on SIHH21N65EF-T1-GE3 improve gate drive performance?

The Kelvin source (Pin 2) on SIHH21N65EF-T1-GE3 provides a dedicated low-inductance return path for the gate driver circuit, decoupling gate control from high di/dt source current flow. This prevents voltage drop across source inductance from falsely raising the effective V_GS, thereby eliminating spurious turn-on and improving switching timing accuracy-especially critical above 100 kHz in high-efficiency SMPS designs using the SIHH21N65EF-T1-GE3.

Is SIHH21N65EF-T1-GE3 suitable for avalanche-prone circuits such as inductive load switching?

Yes, SIHH21N65EF-T1-GE3 is fully rated for unclamped inductive switching with E_AS = 353 mJ (single-pulse, tested per JEDEC JESD24-1). This avalanche capability is validated under defined conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A), confirming robustness in welding equipment, motor drives, and other applications where inductive energy must be safely absorbed without external protection.

What is the gate threshold voltage range for SIHH21N65EF-T1-GE3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SIHH21N65EF-T1-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against false triggering. Designers should target V_GS ≥ 12 V for full enhancement and minimal R_DS(on), as the SIHH21N65EF-T1-GE3 is not a logic-level device.

SIHH21N65EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 19.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2396 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH21N65EF-T1-GE3 FAQ

1.How can I place an order for SIHH21N65EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH21N65EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH21N65EF-T1-GE3 reliable?

The price and inventory of SIHH21N65EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH21N65EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH21N65EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH21N65EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH21N65EF-T1-GE3?

SIHH21N65EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH21N65EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH21N65EF-T1-GE3?

For technical support, including SIHH21N65EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH21N65EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHH21N65EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH21N65EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH21N65EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH21N65EF-T1-GE3?

All SIHH21N65EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH21N65EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH21N65EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH21N65EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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