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Vishay Siliconix SIHH21N65E-T1-GE3
- Part No.:
- SIHH21N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH21N65E-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 20.3A PPAK 8X8
- Quantity:
- Payment:
- Shipping:
Inventory:4,114
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Product details
Overview
SIHH21N65E-T1-GE3 from Vishay Siliconix is a 650 V, 20.3 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency server/telecom SMPS and PFC stages. It delivers RDS(on) = 0.148 Ω (typ) at VGS = 10 V, Qg = 66 nC (typ), and avalanche-rated EAS = 353 mJ - enabling reduced conduction loss, fast switching, and robust unclamped inductive operation.
For engineers reviewing the SIHH21N65E-T1-GE3 datasheet, SIHH21N65E-T1-GE3 pinout, SIHH21N65E-T1-GE3 application, or SIHH21N65E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), ultra-low gate charge, Kelvin-source noise immunity, and 650 V blocking capability for high-voltage DC-DC and AC-DC topologies.
Technical Context
This device employs a superjunction trench-gate structure to achieve high voltage rating with low on-resistance and minimized output capacitance (Coss = 102 pF typ). Its Kelvin source terminal isolates gate drive return from high-current source path, suppressing gate oscillation during hard-switching transitions.
The MOSFET supports continuous operation up to TJ = 150 °C with RthJC = 0.51 °C/W (typ), enabling high-power density designs in constrained thermal environments. Its dV/dt immunity of 70 V/ns (TJ = 125 °C) and body diode trr = 396 ns (typ) support reliable operation in ZVS and resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input rectified rails and 48 V–54 V telecom bus architectures with margin |
| RDS(on) typ @ 10 V | 0.148 Ω - enables ≤ 3.4 W conduction loss at 11 A, reducing heatsink requirements in 1–3 kW PFC stages |
| Qg typ | 66 nC - lowers gate driver power demand and allows use of smaller, lower-cost drivers in high-frequency (>100 kHz) designs |
| Ciss | 2404 pF - contributes to predictable Miller plateau timing and stable turn-on behavior under varying load conditions |
| EAS | 353 mJ - ensures single-pulse ruggedness in flyback, LLC, and hard-switched PSFB converters without external snubbers |
| TJ range | −55 to +150 °C - qualified for industrial and telecom base station environments with wide ambient temperature swings |
| RthJC typ | 0.51 °C/W - supports >100 W dissipation with standard copper PCB thermal pads, eliminating need for bolt-down heatsinks |
Pinout & Package
SIHH21N65E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for low-inductance thermal and electrical connection. The four-terminal layout separates high-current source return (Pin 3) from gate drive reference (Pin 2, Kelvin source) to suppress gate ringing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires <100 nA leakage current compliance and 30 V absolute max rating |
| Pin 2 | Kelvin Source | Dedicated low-noise gate return path; must be routed separately from power source to avoid false turn-off during dI/dt transients |
| Pin 3 | Source | Main current return path; carries full load current (20.3 A continuous); connects to PCB ground plane via multiple vias |
| Pin 4 | Drain | High-voltage power node; ties directly to exposed copper pad on bottom of package for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Eliminates source inductance impact on gate drive loop, enabling stable 100+ kHz switching without external gate resistors |
| Avalanche energy rating (EAS) | 353 mJ - allows safe operation in unclamped inductive switching events common in flyback and forward converters |
| Low figure-of-merit (RDS(on) × Qg) | 9.79 Ω·nC - balances conduction and switching losses better than standard 650 V MOSFETs, improving full-load efficiency by ~0.5–1.2% |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C, supporting environmentally compliant industrial and telecom manufacturing |
| Ultra-low Ciss and Coss | 2404 pF / 102 pF - reduces capacitive switching losses and improves light-load efficiency in resonant topologies |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
Use Scenario: Active boost PFC in 1U 2 kW server PSU operating at 100–125 kHz with 230 V AC input. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter; handles 11 A RMS input current with 650 V blocking. Use Value: Kelvin source minimizes gate oscillation during zero-crossing transitions; low Qg enables efficient operation with integrated gate drivers. |
Use Scenario: Primary-side switch in 48 V telecom rectifier using phase-shifted full-bridge topology with 520 V bus. IC Role / Device Role / Timing Role: High-side bridge leg switch; sustains 53 A pulsed drain current during ZVS transitions. Use Value: 353 mJ EAS rating ensures reliability during startup surges and fault recovery without snubber circuits. |
| Solar PV Inverter DC-DC Stage | Industrial Motor Drive Inverter |
Use Scenario: Isolated DC-DC stage in string-level solar inverter converting 600–1000 V DC input to 400 V DC bus. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology; operates at 150–200 kHz with soft switching. Use Value: Low Coss (102 pF) and Crss (2 pF) reduce dead-time losses and improve ZVS range across wide input voltage range. |
Use Scenario: Half-bridge leg in 5–10 kW variable frequency drive powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-voltage switching element handling 650 V bus and 20 A motor current; used with isolated gate drivers. Use Value: RthJC = 0.51 °C/W enables direct mounting to aluminum chassis without thermal interface material, simplifying mechanical design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N65M5 | 650 V, 65 A, RDS(on) = 0.055 Ω, Qg = 125 nC, TO-247 package, no Kelvin source | Higher current rating but larger footprint and higher gate drive loss; suited for lower-frequency (<75 kHz), higher-power systems | Choose STW65N65M5 when board space permits TO-247 and peak current exceeds 20 A; avoid where gate noise immunity or compact layout is critical |
| IXFH60N65X2 | 650 V, 60 A, RDS(on) = 0.052 Ω, Qg = 110 nC, TO-247 package, no Kelvin source, enhanced body diode | Superior body diode trr (250 ns) and Qrr, but lacks Kelvin source and has 2.2× higher Qg | Prefer IXFH60N65X2 in hard-commutated topologies requiring fast diode recovery; SIHH21N65E-T1-GE3 remains superior for high-frequency, noise-sensitive PFC |
Compared with STW65N65M5 and IXFH60N65X2, SIHH21N65E-T1-GE3 offers the smallest form factor, lowest gate charge, and unique Kelvin source - making it optimal for space-constrained, high-frequency, and noise-critical 1–3 kW power supplies where thermal resistance and layout simplicity matter more than raw current rating.
Availability
SIHH21N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.
Supply support for SIHH21N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIHH21N65E-T1-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, high-frequency switching in enterprise and infrastructure power conversion systems.
FAQ
What is the maximum continuous drain current rating for SIHH21N65E-T1-GE3 at 100 °C case temperature?
The SIHH21N65E-T1-GE3 supports 12.8 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 8 × 8 package and ensures safe operation without exceeding TJ = 150 °C under typical PCB copper area conditions. Designers should verify junction temperature using RthJC = 0.51 °C/W (typ) and actual power dissipation in their layout.
Does SIHH21N65E-T1-GE3 have a Kelvin source connection, and how must it be implemented on the PCB?
Yes, SIHH21N65E-T1-GE3 features a dedicated Kelvin source terminal (Pin 2) separate from the main source (Pin 3). On the PCB, Pin 2 must be routed directly to the gate driver's reference ground with minimal trace length and no shared copper pour with Pin 3. Pin 3 connects to the main power ground plane. This separation prevents source inductance from distorting gate voltage during high dI/dt switching, which is critical for stable operation above 100 kHz.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH21N65E-T1-GE3, and why does it matter?
The SIHH21N65E-T1-GE3 body diode exhibits Qrr = 6.2 μC (typ) at TJ = 25 °C, IF = 11 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-commutated topologies like synchronous buck or active clamp forward converters. Lower Qrr reduces tail current and associated heat generation, improving efficiency and reliability - especially important in high-density power modules where thermal headroom is limited.
Can SIHH21N65E-T1-GE3 replace older 600 V MOSFETs in existing PFC designs without layout changes?
No - SIHH21N65E-T1-GE3 uses the PowerPAK® 8 × 8 footprint, which differs from common TO-220, D²PAK, or SO-8 packages. While its electrical specs (650 V rating, 20.3 A rating, Kelvin source) offer advantages over legacy 600 V parts, PCB redesign is required to accommodate the 8 mm × 8 mm land pattern, four-terminal pinout, and exposed drain pad. Layout must also isolate Pin 2 (Kelvin source) per Vishay's recommended routing guidelines to realize its noise immunity benefit.
What is the gate threshold voltage range for SIHH21N65E-T1-GE3, and how does it affect drive circuit design?
The SIHH21N65E-T1-GE3 has a gate threshold voltage VGS(th) range of 2.0 V to 4.0 V (min to max) at TJ = 25 °C. This relatively wide spread means gate drivers must deliver ≥10 V to ensure full enhancement across process and temperature extremes. Using only 5 V logic-level drive risks incomplete turn-on and excessive RDS(on), increasing conduction loss. Designers should verify gate drive strength and rise/fall times against the device's Qg = 66 nC (typ) to avoid slow transitions and shoot-through risk.
SIHH21N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 99 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2404 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH21N65E-T1-GE3 FAQ
1.How can I place an order for SIHH21N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH21N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH21N65E-T1-GE3 reliable?
The price and inventory of SIHH21N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH21N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH21N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH21N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH21N65E-T1-GE3?
SIHH21N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH21N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH21N65E-T1-GE3?
For technical support, including SIHH21N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH21N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH21N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH21N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH21N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH21N65E-T1-GE3?
All SIHH21N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH21N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH21N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH21N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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