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Vishay Siliconix SIHH24N65EF-T1-GE3
- Part No.:
- SIHH24N65EF-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH24N65EF-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 23A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:8,023
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Product details
Overview
SIHH24N65EF-T1-GE3 from Vishay Siliconix is a 650 V, 23 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features RDS(on) = 0.137 Ω (typ) at VGS = 10 V, Qg = 78 nC (typ), and avalanche-rated UIS capability of 353 mJ - enabling robust operation in hard-switched industrial and telecom power converters.
For engineers reviewing the SIHH24N65EF-T1-GE3 datasheet, SIHH24N65EF-T1-GE3 pinout, SIHH24N65EF-T1-GE3 application, or SIHH24N65EF-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), fast body diode (trr = 145 ns typ), Kelvin-source noise reduction, and 650 V blocking voltage suited for 400 V bus systems.
Technical Context
This device employs a superjunction trench-gate structure to achieve high voltage rating with low conduction loss. Its Kelvin source terminal separates power and signal return paths, minimizing gate drive loop inductance and suppressing switching oscillation during high dI/dt transitions.
The integrated fast-recovery body diode (VSD = 0.95 V typ at 12 A, trr = 145 ns) supports ZVS-capable topologies and reduces snubber losses in phase-shifted full-bridge and LLC resonant converters. Thermal resistance RthJC = 0.48 °C/W enables high-power density designs when mounted on thermally optimized PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus with ≥30 % safety margin in telecom/server PSUs |
| RDS(on) typ @ 10 V | 0.137 Ω - enables <2.0 W conduction loss at 12 A continuous drain current |
| Qg max | 117 nC - determines gate driver power requirement and switching speed trade-off |
| EAS | 353 mJ - ensures single-pulse unclamped inductive switching survivability in PFC boost stages |
| trr typ | 145 ns - reduces reverse recovery loss and EMI in hard-switched bridge legs |
| RthJC max | 0.62 °C/W - defines minimum heatsink interface thermal resistance for 150 °C junction limit |
| ID cont @ TC = 100 °C | 14 A - sets practical current derating for surface-mount thermal management |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), thermally enhanced exposed-drain copper pad, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires low-inductance routing to minimize ringing |
| Pin 2 | Kelvin Source | Reference node for gate drive return - isolates power source path to suppress ground bounce |
| Pin 3 | Source | Main power return path; carries full load current and must be routed with wide copper pour |
| Pin 4 | Drain | Exposed copper pad on bottom surface - primary thermal and high-current path to PCB heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge (Qg) | 78 nC typ - reduces gate driver power loss and enables >500 kHz operation with standard drivers |
| Kelvin source connection | Separates signal and power source returns - eliminates common-source inductance-induced shoot-through risk |
| Fast body diode (trr, Qrr) | trr = 145 ns, Qrr = 0.91 μC - lowers diode conduction loss and EMI in discontinuous conduction mode (DCM) PFC |
| Avalanche energy rated (UIS) | EAS = 353 mJ - allows reliable operation under transient overvoltage without external clamping |
| Low Ciss and Coss | Ciss = 2780 pF, Coss(er) = 88 pF - improves light-load efficiency and simplifies EMI filter design |
Applications
| Server & Telecom SMPS | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: Primary-side switching in 3 kW front-end AC/DC rectifiers for data center power shelves. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switch in continuous conduction mode (CCM) boost converter. Use Value: Low RDS(on) and Kelvin source reduce conduction loss and improve power factor correction efficiency above 98.5 % at full load. |
Use Scenario: Active clamp forward or phase-shifted full-bridge output rectification in welding inverters. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling 20–30 A DC output with fast body diode freewheeling. Use Value: Fast trr and low VSD minimize reverse recovery loss during zero-voltage switching transitions. |
| Solar PV Inverter DC/DC Stage | HID Lighting Ballast |
|
Use Scenario: Isolated DC/DC stage in string-level solar microinverters operating at 600 V DC input. IC Role / Device Role / Timing Role: High-side switch in active clamp flyback or resonant LLC topology. Use Value: 650 V VDS rating and EAS rating ensure reliability against PV string voltage surges and lightning transients. |
Use Scenario: High-frequency electronic ballast for 250–400 W metal halide lamps in street lighting. IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 50–100 kHz with high dV/dt stress. Use Value: dV/dt capability of 70 V/ns and low Crss suppress false turn-on and improve lamp ignition stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N65M5 | RDS(on) = 0.125 Ω (typ), Qg = 120 nC, TO-247 package, no Kelvin source | Larger footprint and higher gate drive loss; better thermal mass but less suitable for ultra-thin PSU designs | Preferred where board space is unconstrained and higher surge current tolerance is required |
| IXFH30N65X2 | RDS(on) = 0.135 Ω (typ), Qg = 62 nC, TO-247 package, standard source | Lower Qg but lacks Kelvin source and fast body diode - higher EMI risk in high-dI/dt layouts | Selected when gate drive simplicity outweighs noise sensitivity in non-critical industrial drives |
Compared with STW65N65M5 and IXFH30N65X2, SIHH24N65EF-T1-GE3 delivers superior high-frequency efficiency via its Kelvin source and lower Ciss, while maintaining competitive RDS(on) - making it optimal for compact, high-density server and telecom power modules where layout parasitics dominate performance.
Availability
SIHH24N65EF-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial PFC circuits, and solar PV inverter DC/DC stages requiring stable component supply and long-term production continuity.
Supply support for SIHH24N65EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIHH24N65EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switching in energy-efficient power conversion systems where low FOM and fast body diode performance are critical.
FAQ
What is the maximum continuous drain current for SIHH24N65EF-T1-GE3 at 100 °C case temperature?
The SIHH24N65EF-T1-GE3 supports 14 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 23 A rating at 25 °C and assumes proper PCB copper area and thermal vias per Vishay's recommended PowerPAK® 8 × 8 pad layout (Document #68441). Exceeding this current risks junction temperature exceeding 150 °C.
Does SIHH24N65EF-T1-GE3 have a Kelvin source connection, and how is it implemented?
Yes, SIHH24N65EF-T1-GE3 features a dedicated Kelvin source terminal (Pin 2), physically isolated from the main power source (Pin 3). This configuration separates the gate drive reference path from high-current return, reducing common-source inductance and preventing gate oscillation during fast switching. The Kelvin source must be connected directly to the gate driver ground, not to the main power ground plane.
What is the typical reverse recovery time (trr) of the body diode in SIHH24N65EF-T1-GE3, and under what conditions is it measured?
The typical reverse recovery time (trr) of the SIHH24N65EF-T1-GE3 body diode is 145 ns, measured at TJ = 25 °C with IF = IS = 12 A, dI/dt = 100 A/μs, and VR = 25 V. This parameter confirms suitability for high-frequency hard-switched topologies where fast diode recovery minimizes switching loss and voltage overshoot.
Can SIHH24N65EF-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SIHH24N65EF-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 353 mJ, tested per JEDEC standard JESD24-1. This rating applies under conditions of VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 5 A - validating robustness in PFC boost inductor fault conditions.
What is the gate threshold voltage range for SIHH24N65EF-T1-GE3, and why does it matter for gate drive design?
The gate threshold voltage (VGS(th)) for SIHH24N65EF-T1-GE3 ranges from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This relatively wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation, avoiding linear-mode operation and excessive conduction loss. A 12 V gate drive is recommended for margin.
SIHH24N65EF-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 158mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 202W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH24N65EF-T1-GE3 FAQ
1.How can I place an order for SIHH24N65EF-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH24N65EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH24N65EF-T1-GE3 reliable?
The price and inventory of SIHH24N65EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH24N65EF-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH24N65EF-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH24N65EF-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH24N65EF-T1-GE3?
SIHH24N65EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH24N65EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH24N65EF-T1-GE3?
For technical support, including SIHH24N65EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH24N65EF-T1-GE3 requirements.
6.How does Aetrix verify that SIHH24N65EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH24N65EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH24N65EF-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH24N65EF-T1-GE3?
All SIHH24N65EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH24N65EF-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH24N65EF-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH24N65EF-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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