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Vishay Siliconix SIHH24N65E-T1-GE3
- Part No.:
- SIHH24N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH24N65E-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 23A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:6,299
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Product details
Overview
SIHH24N65E-T1-GE3 from Vishay Siliconix is a 650 V, 23 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, RDS(on) = 0.130 Ω (VGS = 10 V), Qg = 77 nC (typ.), and avalanche-rated (EAS = 353 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHH24N65E-T1-GE3 datasheet, SIHH24N65E-T1-GE3 pinout, SIHH24N65E-T1-GE3 application, or SIHH24N65E-T1-GE3 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring robust UIS capability, low Ciss (2814 pF), and reduced gate noise via dedicated Kelvin source terminal.
Technical Context
This E-Series MOSFET uses planar stripe silicon technology optimized for 650 V operation, featuring a Kelvin source configuration that separates high-current source return from gate drive reference to suppress common-source inductance effects during fast switching. Its low Qgd/Qg ratio (33/116 nC) supports high dV/dt immunity (70 V/ns at TJ = 125 °C).
The device integrates an ultra-low RDS(on) × Qg figure-of-merit (10.03 Ω·nC), enabling high-frequency operation up to 200 kHz in continuous conduction mode (CCM) PFC while maintaining <1.2 V body diode forward voltage (VSD) at 12 A and 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Supports 400 V AC input rectified to ~560 V DC bus with 15 % margin for transient overvoltage in telecom/server PFC. |
| RDS(on) typ | 0.130 Ω @ VGS = 10 V - Enables ≤2.1 W conduction loss at 12 A, critical for thermal management in compact 202 W PD-rated designs. |
| Qg max | 116 nC - Determines gate driver current requirement (≥1.3 A peak for 90 ns turn-on with 9.1 Ω Rg). |
| EAS | 353 mJ - Withstands unclamped inductive energy during hard commutation without failure, validated per JEDEC JESD24-11. |
| Ciss | 2814 pF - Low input capacitance reduces Miller effect and improves controllability in high-dV/dt environments. |
| VSD max | 1.2 V @ IS = 12 A - Limits reverse recovery losses in synchronous rectification or bidirectional topologies. |
| RthJC max | 0.62 °C/W - Enables >150 W dissipation with 25 °C case temperature, supporting high-power density layouts. |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control terminal; connects to gate driver output with minimal trace inductance to avoid oscillation. |
| Pin 2 | Kelvin Source | Dedicated low-inductance gate reference path; must be routed separately from high-current source return to minimize VGS error during switching. |
| Pin 3 | Source | Main power source return; carries full load current (23 A continuous); soldered to large copper pour for thermal conduction. |
| Pin 4 | Drain | High-voltage power input/output node; connected to exposed drain pad on package underside for optimal heat transfer to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source connection | Separates gate reference from high-current source path, reducing effective gate resistance and improving switching consistency under high dI/dt. |
| Avalanche energy rating (UIS) | 353 mJ single-pulse - Eliminates need for external snubbers in inductive load switching, simplifying layout and improving reliability. |
| Low RDS(on) × Qg FOM | 10.03 Ω·nC - Balances conduction and switching losses for optimal efficiency across 50–200 kHz PFC operating range. |
| Ultra-low Qgd | 33 nC - Minimizes Miller plateau duration and gate drive power, enabling faster turn-off and improved hard-switching robustness. |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C - Suitable for industrial and telecom equipment with strict environmental compliance requirements. |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Boost PFC converter operating at 100–200 kHz with 48 V–54 V output, handling 1.5–3 kW input power. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; switches at fixed frequency with variable duty cycle. Use Value: Low RDS(on) minimizes conduction loss at high RMS current; Kelvin source ensures stable gate drive despite 20 A+ source return transients. |
Use Scenario: High-density 48 V telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to repetitive UIS events during fault conditions. Use Value: 353 mJ EAS rating enables reliable operation without derating during line surges or output short-circuits. |
| Solar PV Inverter DC-DC Stage | Industrial Motor Drive Inverter |
|
Use Scenario: Isolated DC-DC converter stepping down 1000 V DC string voltage to 400 V intermediate bus in string inverters. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology; operates with soft-switching but requires hard-switching capability during startup/faults. Use Value: 650 V VDS rating provides 25 % margin above 800 V DC link transients; low Ciss supports precise timing control in ZVS transitions. |
Use Scenario: 3-phase inverter driving 7.5 kW induction motor in HVAC compressors or pumps. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz PWM inverter leg; handles 23 A RMS phase current with 58 A peak surge. Use Value: 58 A pulsed drain current (IDM) and 150 °C TJ rating support intermittent overload without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | 650 V, 48 A, RDS(on) = 0.065 Ω, no Kelvin source, TO-247 package | Higher current rating but larger footprint and higher Qg (135 nC); lacks Kelvin source for gate noise suppression | Preferred where board space allows TO-247 and higher continuous current is required; not suitable for ultra-low-noise gate drive layouts. |
| IXTH30N65X2 | 650 V, 30 A, RDS(on) = 0.095 Ω, TO-247, no Kelvin source, enhanced ruggedness | Lower RDS(on) but higher Ciss (3900 pF); same package thermal limitations; no Kelvin source | Better for lower-conduction-loss priority in non-noise-sensitive designs; unsuitable where gate loop inductance must be minimized. |
Compared with STW48N65M5 and IXTH30N65X2, SIHH24N65E-T1-GE3 offers superior gate noise immunity via Kelvin source and smaller footprint (PowerPAK 8×8 vs. TO-247), making it optimal for high-density, high-reliability PFC and telecom rectifier modules where layout-induced oscillation must be avoided.
Availability
SIHH24N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHH24N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The E Series Power MOSFETs, including SIHH24N65E-T1-GE3, are engineered for high-voltage, high-frequency switching in server, telecom, and renewable energy power conversion systems where low FOM and avalanche robustness are critical.
FAQ
What is the maximum junction temperature rating for SIHH24N65E-T1-GE3?
The SIHH24N65E-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This 150 °C maximum enables operation in high-ambient environments such as enclosed telecom rectifier cabinets or industrial motor drive enclosures without forced cooling, provided thermal design maintains TJ ≤ 150 °C under worst-case load and ambient conditions. The device's RthJC of 0.62 °C/W supports this rating when mounted on adequately sized copper.
Does SIHH24N65E-T1-GE3 support gate drive at 5 V logic level?
No, SIHH24N65E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and its RDS(on) is specified at VGS = 10 V. Driving it at 5 V results in significantly elevated RDS(on) (>0.3 Ω) and unreliable turn-on. The SIHH24N65E-T1-GE3 requires a 10 V–15 V gate drive for full enhancement and specified performance, consistent with standard gate drivers like UCC27531 or IRS2007.
How does the Kelvin source connection in SIHH24N65E-T1-GE3 improve switching behavior?
The Kelvin source connection in SIHH24N65E-T1-GE3 separates the gate return path from the main source current path, eliminating voltage drop across source inductance from affecting the gate-to-source voltage. This prevents false turn-off during high dI/dt switching events and stabilizes gate drive timing-critical in high-frequency PFC where source inductance can cause oscillation or shoot-through. The SIHH24N65E-T1-GE3 requires separate routing of Pin 2 (Kelvin source) directly to the gate driver ground, distinct from Pin 3 (power source).
What is the typical reverse recovery charge (Qrr) of the body diode in SIHH24N65E-T1-GE3?
The SIHH24N65E-T1-GE3 body diode has a typical reverse recovery charge Qrr of 7.4 μC, measured at TJ = 25 °C, IF = 12 A, dI/dt = 100 A/μs, and VR = 25 V. This value impacts commutation losses in synchronous rectification or bidirectional converters. Lower Qrr contributes to reduced switching loss and EMI compared to older-generation 650 V MOSFETs, supporting cleaner waveforms in high-frequency designs.
Is SIHH24N65E-T1-GE3 suitable for use in avalanche-mode operation?
Yes, SIHH24N65E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy EAS of 353 mJ. This rating is validated per JEDEC JESD24-11 and allows safe operation during inductive turn-off transients-such as those occurring in PFC boost inductors or motor drive freewheeling-without external snubbers. Repeated avalanche operation is not recommended; the SIHH24N65E-T1-GE3 is intended for controlled hard-switching with occasional UIS tolerance.
SIHH24N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 116 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2814 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 202W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH24N65E-T1-GE3 FAQ
1.How can I place an order for SIHH24N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH24N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH24N65E-T1-GE3 reliable?
The price and inventory of SIHH24N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH24N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH24N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH24N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH24N65E-T1-GE3?
SIHH24N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH24N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH24N65E-T1-GE3?
For technical support, including SIHH24N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH24N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH24N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH24N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH24N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH24N65E-T1-GE3?
All SIHH24N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH24N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH24N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH24N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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