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Vishay Siliconix SIHH250N60EF-T1GE3
- Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH250N60EF-T1GE3.pdf
- Description:
- EF SERIES POWER MOSFET WITH FAST
- Quantity:
- Payment:
- Shipping:
Inventory:3,050
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Product details
Overview
SIHH250N60EF-T1GE3 from Vishay Siliconix is a 600 V, 13 A N-channel Power MOSFET in PowerPAK® 8 × 8 package, featuring RDS(on) = 0.218 Ω (typ. at VGS = 10 V), Qg = 15 nC (typ.), and fast body diode with trr = 76 ns - optimized for high-efficiency PFC and SMPS stages in server and telecom power supplies.
For engineers reviewing the SIHH250N60EF-T1GE3 datasheet, SIHH250N60EF-T1GE3 pinout, SIHH250N60EF-T1GE3 application, or SIHH250N60EF-T1GE3 equivalent, key selection criteria include avalanche-rated UIS performance (62 mJ), low Co(er) = 47 pF for reduced switching loss, and thermal resistance RthJC = 1.0 °C/W enabling high-power-density designs without forced airflow.
Technical Context
This EF-series MOSFET employs 4th-generation E-series silicon technology to achieve low figure-of-merit (RDS(on) × Qg = 3.27 Ω·nC), enabling simultaneous reduction in conduction and switching losses. Its fast intrinsic body diode supports ZVS/ZCS topologies and reduces need for external anti-parallel diodes in bridge configurations.
The device is rated for 600 V VDS, operates across -55 °C to +150 °C junction temperature range, and features 100 V/ns dv/dt immunity at TJ = 125 °C - critical for noise-immune operation in high-dV/dt industrial inverters and solar PV string inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling in PFC and offline SMPS |
| RDS(on) typ | 0.218 Ω at VGS = 10 V, ID = 5.5 A - enables <1.3 W conduction loss at 5.5 A, reducing heatsink requirements in 1–3 kW systems |
| Qg typ | 15 nC - lowers gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) PFC controllers |
| trr | 76 ns (typ.) - minimizes reverse recovery loss and EMI in hard-switched totem-pole PFC and half-bridge resonant converters |
| EAS | 62 mJ - provides single-pulse unclamped inductive switching robustness for motor drive and welding applications without snubber circuits |
| RthJC | 1.0 °C/W - permits >70 W continuous power dissipation with minimal case-to-heatsink thermal interface resistance |
| Co(er) | 47 pF - reduces turn-off energy loss (Eoss) by ~30 % vs. legacy 600 V MOSFETs, improving efficiency at 200–500 kHz switching |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, thermally enhanced copper-clip construction with exposed drain pad on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal; requires 10 V drive for full enhancement; gate input resistance 0.8–3.3 Ω limits ringing in high-speed switching |
| 2 (S) | Source | Power return path and reference for gate drive; tied to PCB ground plane; low-inductance layout essential for di/dt stability |
| 3 (D) | Drain | Main power output terminal; electrically connected to exposed copper pad on package underside - must be soldered to large thermal pad for RthJC optimization |
| 4 (S) | Source (redundant) | Second source connection for current sharing and reduced source inductance; improves gate threshold stability under high di/dt |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 76 ns and Qrr = 0.3 μC enable efficient synchronous rectification and reduce need for external Schottky diodes in LLC resonant converters |
| Avalanche energy rating | EAS = 62 mJ ensures reliable operation during inductive load switching events without derating in motor drives and UPS inverters |
| Low effective output capacitance | Co(er) = 47 pF reduces turn-off loss and improves light-load efficiency in high-frequency PFC stages above 200 kHz |
| Thermally optimized package | RthJC = 1.0 °C/W allows direct mounting to heatsink via bottom-side drain pad - eliminates thermal vias and simplifies 2-layer PCB layouts |
| High dv/dt immunity | 100 V/ns at TJ = 125 °C prevents false turn-on in noisy industrial environments and high-di/dt motor control applications |
Applications
| Server & Telecom Power Supplies | Photovoltaic (PV) Inverters |
|---|---|
|
Use Scenario: Active clamp forward and totem-pole PFC stages in 1U/2U 1–3 kW AC-DC front-ends. IC Role / Device Role / Timing Role: Main switching device in high-frequency (100–300 kHz) boost PFC; handles 13 A RMS input current with low conduction loss. Use Value: RDS(on) = 0.218 Ω and Qg = 15 nC reduce total power loss by 12 % vs. comparable 650 V Si MOSFETs, enabling higher efficiency at 96.5 % EU Tier 2 compliance. |
Use Scenario: DC-AC H-bridge stage in string inverters converting 600–1000 V DC to 230 V AC grid output. IC Role / Device Role / Timing Role: High-side/low-side switch in unipolar PWM topology; withstands repetitive 600 V blocking and 10 kA surge currents. Use Value: 62 mJ UIS rating and 100 V/ns dv/dt immunity eliminate need for external clamping in transformerless inverter designs, reducing BOM count by two TVS diodes per leg. |
| Industrial Motor Drives | Induction Heating Systems |
|
Use Scenario: Inverter output stage driving 3-phase 0.75–2.2 kW induction motors in HVAC and pump VFDs. IC Role / Device Role / Timing Role: IGBT replacement in 10–20 kHz hard-switched inverters; used with active Miller clamp and desaturation protection. Use Value: Fast body diode (trr = 76 ns) suppresses shoot-through risk during commutation, allowing tighter dead-time settings and improved torque linearity. |
Use Scenario: Half-bridge resonant tank switches in 20–100 kHz induction cooktops and industrial heating generators. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) switch with low Co(er) = 47 pF to minimize capacitive turn-on loss at high frequency. Use Value: Co(er)-driven Eoss reduction cuts switching loss by 35 % at 50 kHz, enabling compact ferrite-core magnetics and 15 % smaller heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20N60M2 | RDS(on) = 0.22 Ω (typ.), Qg = 22 nC, TO-247 package, no fast body diode (trr > 200 ns) | Requires external anti-parallel diode in bridge configurations; higher gate drive loss due to +47 % Qg | Preferred where through-hole mounting and legacy footprint compatibility outweigh efficiency gains |
| IXFH20N60X3 | RDS(on) = 0.24 Ω (typ.), Qg = 17 nC, TO-247 package, trr = 110 ns, EAS = 45 mJ | Lower avalanche robustness and slower diode recovery limit use in high-reliability industrial UPS and welders | Selected when cost-sensitive designs accept 15 % higher conduction loss and reduced ruggedness margin |
Compared with STW20N60M2 and IXFH20N60X3, SIHH250N60EF-T1GE3 delivers superior switching efficiency via lower Qg and faster diode recovery, while its PowerPAK 8 × 8 package enables 40 % smaller PCB area and 3× better thermal performance than TO-247 alternatives - critical for space-constrained 1U servers and portable induction heaters.
Availability
SIHH250N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.
Supply support for SIHH250N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The EF Series targets high-efficiency, high-reliability power conversion in demanding applications - engineered for low RDS(on) × Qg, fast body diode response, and rugged avalanche operation in PFC, SMPS, and motor control.
FAQ
What is the maximum continuous drain current rating for SIHH250N60EF-T1GE3 at 100 °C case temperature?
The SIHH250N60EF-T1GE3 has a continuous drain current rating of 8 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 13 A rating at 25 °C, based on a linear derating factor of 0.71 W/°C and RthJC = 1.0 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under full load to sustain this current.
Does SIHH250N60EF-T1GE3 support logic-level gate drive?
No, SIHH250N60EF-T1GE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 3.0 V to 5.0 V, and it is characterized for full enhancement at VGS = 10 V. The datasheet specifies RDS(on), Qg, and switching parameters only at 10 V gate drive - using 5 V or lower will result in significantly higher on-resistance and unpredictable switching behavior. SIHH250N60EF-T1GE3 requires a dedicated 10 V gate driver.
What is the significance of the "EF" suffix in SIHH250N60EF-T1GE3?
The "EF" suffix identifies this device as part of Vishay's EF Series Power MOSFET family, which features fourth-generation E-series silicon technology optimized for fast body diode performance, low RDS(on) × Qg figure-of-merit, and high avalanche energy rating. EF devices are specifically designed for high-frequency, high-efficiency PFC and SMPS applications where diode recovery and switching loss dominate system efficiency - distinguishing them from standard "E" or "N" series variants.
Can SIHH250N60EF-T1GE3 be used in parallel configurations?
Yes, SIHH250N60EF-T1GE3 supports paralleling due to its positive RDS(on) temperature coefficient (confirmed by Fig. 4: Normalized On-Resistance vs. Temperature), which promotes current sharing across multiple devices. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to dampen oscillation. The dual-source pin configuration (Pins 2 and 4) further enhances current balance in high-current applications.
What is the recommended PCB pad layout for SIHH250N60EF-T1GE3's PowerPAK 8 × 8 package?
Vishay recommends the minimum PAD pattern documented in Document Number 68441: an 8.3 mm × 8.3 mm thermal pad with 0.4 mm solder mask opening, surrounded by 2.65 mm × 4.45 mm source and gate pads. At least six 0.37 mm thermal vias (with 0.68 mm annular ring) must connect the bottom drain pad to an internal or backside copper pour. This layout achieves the specified RthJC = 1.0 °C/W and prevents solder voiding during reflow - critical for sustained 89 W power dissipation.
SIHH250N60EF-T1GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 915 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH250N60EF-T1GE3 FAQ
1.How can I place an order for SIHH250N60EF-T1GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH250N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH250N60EF-T1GE3 reliable?
The price and inventory of SIHH250N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH250N60EF-T1GE3 is usually 5 days.
3.What payment methods are accepted for SIHH250N60EF-T1GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH250N60EF-T1GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH250N60EF-T1GE3?
SIHH250N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH250N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH250N60EF-T1GE3?
For technical support, including SIHH250N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH250N60EF-T1GE3 requirements.
6.How does Aetrix verify that SIHH250N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH250N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH250N60EF-T1GE3 meets industry standards.
7.What is the process for return or replacement of SIHH250N60EF-T1GE3?
All SIHH250N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH250N60EF-T1GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH250N60EF-T1GE3 part is unused and in its original packaging.
Return procedure for SIHH250N60EF-T1GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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