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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH26N60EF-T1-GE3

Name: SIHH26N60EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH26N60EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH26N60EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH26N60EF-T1-GE3.pdf

Description:: MOSFET N-CH 600V 24A PPAK 8 X 8

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Product details

Overview

SIHH26N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 24 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency hard-switched and resonant SMPS topologies. It delivers R_DS(on) = 0.123 Ω (typ) at V_GS = 10 V, Q_g = 80 nC (typ), and avalanche-rated E_AS = 353 mJ - enabling reduced conduction and switching losses in PFC and LLC stages of server power supplies.

For engineers reviewing the SIHH26N60EF-T1-GE3 datasheet, SIHH26N60EF-T1-GE3 pinout, SIHH26N60EF-T1-GE3 application, or SIHH26N60EF-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), fast body diode (t_rr = 146 ns typ), Kelvin source configuration for gate drive stability, and 600 V V_DS rating suitable for 400 V DC bus systems.

Technical Context

This device implements a trench-gate, superjunction structure with integrated fast-recovery body diode and Kelvin source terminal to minimize common-source inductance. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity in high-dV/dt environments, while dV/dt capability of 70 V/ns (T_J = 125 °C) supports reliable operation in fast-switching converters.

The PowerPAK® 8 × 8 package features a thermally enhanced drain-exposed copper pad and four dedicated source terminals (including Kelvin), enabling low R_thJC = 0.48 °C/W (typ) and stable gate control under high di/dt conditions up to 100 A/μs during body diode commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus with ≥50 % safety margin in telecom/server PSUs
R_DS(on) (V_GS = 10 V)	0.123 Ω (typ) - Enables ≤3.9 W conduction loss at 24 A continuous drain current
Q_g	80 nC (typ) - Reduces gate drive power and enables >300 kHz operation with standard drivers
t_rr	146 ns (typ) - Minimizes reverse recovery loss and EMI in bridge-leg hard-switching
E_AS	353 mJ - Withstands unclamped inductive energy in PFC boost choke failure events
R_thJC	0.48 °C/W (typ) - Allows 202 W power dissipation with <100 °C case-to-junction rise
dV/dt (T_J = 125 °C)	70 V/ns - Ensures immunity to false turn-on in high-speed half-bridge configurations

Pinout & Package

PowerPAK® 8 × 8 package: 8 mm × 8 mm footprint with exposed drain thermal pad, four source terminals (Pins 2 & 3 are Kelvin source and power source respectively), and single gate terminal. Package meets JEDEC MO-295 standards and is lead (Pb)-free/halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Primary gate control input; low C_iss = 2744 pF enables fast edge rates with minimal driver stress
Pin 2	Kelvin Source	Reference return for gate driver to eliminate common-source inductance effects on switching speed/stability
Pin 3	Source	Main power source return path; carries full load current (24 A continuous)
Pin 4	Drain	High-side switch node connection; electrically and thermally tied to exposed copper pad for low R_thJC

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 80 nC (typ) - Cuts gate drive loss by >40 % vs. legacy 600 V MOSFETs with same R_DS(on)
Fast body diode	t_rr = 146 ns (typ), Q_rr = 0.9 μC (typ) - Reduces dead-time loss and voltage overshoot in synchronous rectification
Kelvin source configuration	Dedicated Pin 2 for gate reference - Eliminates source inductance-induced oscillation during high di/dt switching
Avalanche energy rated	E_AS = 353 mJ - Guarantees ruggedness against transient overvoltage without external snubbers in PFC circuits
Low figure-of-merit	R_DS(on) × Q_g = 9.8 Ω·nC (0.123 Ω × 80 nC) - Optimized trade-off for high-frequency, high-power density designs

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100–300 kHz with 48 V–54 V output and 240 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles 24 A peak inductor current. Use Value: Low Q_g and fast t_rr reduce total switching loss by 22 % versus standard 600 V MOSFETs, improving efficiency from 96.1 % to 96.7 % at full load.	Use Scenario: Isolated LLC resonant DC/DC converter in 48 V telecom rectifier, delivering 1.5 kW with ZVS operation. IC Role / Device Role / Timing Role: High-side primary-side switch; operates with 500 V_DS peak stress and 100 A/μs di/dt during body diode commutation. Use Value: Kelvin source and 70 V/ns dV/dt rating prevent spurious turn-on, enabling stable ZVS across line/load range without added gate clamping.
Solar PV Inverter Boost Stage	Industrial Motor Drive Inverter
Use Scenario: DC/DC boost stage in string-level solar inverter, stepping up 300–1000 V DC input to 1200 V DC bus. IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter; rated for 600 V blocking with 2× safety margin. Use Value: 353 mJ E_AS withstands lightning-induced transients on PV strings, eliminating need for external TVS in Class II installations.	Use Scenario: Three-phase IGBT gate driver auxiliary supply using flyback converter with 400 V DC input. IC Role / Device Role / Timing Role: Primary switch in 100 kHz flyback transformer driver; delivers isolated 15 V/2 A bias rails. Use Value: Low C_oss(er) = 82 pF minimizes capacitive turn-off loss, increasing light-load efficiency by 3.1 % compared to standard 600 V MOSFETs.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100–300 kHz with 48 V–54 V output and 240 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles 24 A peak inductor current.

Use Value: Low Q_g and fast t_rr reduce total switching loss by 22 % versus standard 600 V MOSFETs, improving efficiency from 96.1 % to 96.7 % at full load.

Use Scenario: Isolated LLC resonant DC/DC converter in 48 V telecom rectifier, delivering 1.5 kW with ZVS operation.

IC Role / Device Role / Timing Role: High-side primary-side switch; operates with 500 V_DS peak stress and 100 A/μs di/dt during body diode commutation.

Use Value: Kelvin source and 70 V/ns dV/dt rating prevent spurious turn-on, enabling stable ZVS across line/load range without added gate clamping.

Solar PV Inverter Boost Stage

Industrial Motor Drive Inverter

Use Scenario: DC/DC boost stage in string-level solar inverter, stepping up 300–1000 V DC input to 1200 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter; rated for 600 V blocking with 2× safety margin.

Use Value: 353 mJ E_AS withstands lightning-induced transients on PV strings, eliminating need for external TVS in Class II installations.

Use Scenario: Three-phase IGBT gate driver auxiliary supply using flyback converter with 400 V DC input.

IC Role / Device Role / Timing Role: Primary switch in 100 kHz flyback transformer driver; delivers isolated 15 V/2 A bias rails.

Use Value: Low C_oss(er) = 82 pF minimizes capacitive turn-off loss, increasing light-load efficiency by 3.1 % compared to standard 600 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60DM6	600 V, 20 A, R_DS(on) = 0.19 Ω, no Kelvin source, Q_g = 65 nC	Higher R_DS(on) increases conduction loss; lacks Kelvin source for gate stability in high-di/dt layouts	Preferred where cost sensitivity outweighs efficiency gain and layout allows conservative gate drive design
IXFH24N60X3	600 V, 24 A, R_DS(on) = 0.135 Ω, TO-247 package, Q_g = 92 nC, no Kelvin source	Larger footprint and higher R_thJC (0.85 °C/W) limit power density; slower switching due to higher Q_g	Selected when through-hole mounting or legacy TO-247 heatsink compatibility is required

Compared with STW20N60DM6 and IXFH24N60X3, SIHH26N60EF-T1-GE3 offers superior power density via its PowerPAK® 8 × 8 package, lower conduction loss from 0.123 Ω R_DS(on), and gate stability via Kelvin source - making it optimal for compact, high-efficiency 600 V SMPS where layout parasitics must be tightly controlled.

Availability

SIHH26N60EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH26N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal performance.

The SIHH26N60EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHH26N60EF-T1-GE3 at TC = 100 °C?

The SIHH26N60EF-T1-GE3 has a maximum continuous drain current (I_D) of 15 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per the recommended PowerPAK® 8 × 8 pad layout (Document #68441), and accounts for linear derating beyond 25 °C ambient.

Does SIHH26N60EF-T1-GE3 support gate drive with 5 V logic-level signals?

No - SIHH26N60EF-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) = 0.123 Ω. Driving SIHH26N60EF-T1-GE3 with only 5 V risks incomplete turn-on and excessive conduction loss; a 10–15 V gate drive is mandatory for rated performance.

How does the Kelvin source configuration in SIHH26N60EF-T1-GE3 improve switching behavior?

The Kelvin source (Pin 2) in SIHH26N60EF-T1-GE3 provides a dedicated low-inductance return path for the gate driver, decoupling gate loop impedance from high-current source paths. This eliminates voltage spikes induced by di/dt across common-source inductance, preventing false turn-off or oscillation - especially critical in hard-switched PFC and high-frequency LLC converters where SIHH26N60EF-T1-GE3 operates.

What is the typical reverse recovery charge (Q_rr) of SIHH26N60EF-T1-GE3, and why does it matter?

The typical reverse recovery charge (Q_rr) of SIHH26N60EF-T1-GE3 is 0.9 μC at T_J = 25 °C, I_F = 13 A, and dI/dt = 100 A/μs. This low Q_rr directly reduces energy loss and voltage overshoot during body diode commutation in bridge-leg topologies - a key factor in achieving >96 % efficiency in high-density 600 V SMPS where SIHH26N60EF-T1-GE3 is deployed.

Is SIHH26N60EF-T1-GE3 suitable for use in automotive applications?

SIHH26N60EF-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. While its -55 °C to +150 °C operating temperature range meets some under-hood requirements, Vishay positions this device for industrial, telecom, and server applications - not automotive. For automotive-grade alternatives, consult Vishay's AQ series or contact Aetrix for qualified replacements.

SIHH26N60EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 141mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2744 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH26N60EF-T1-GE3 FAQ

1.How can I place an order for SIHH26N60EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH26N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH26N60EF-T1-GE3 reliable?

The price and inventory of SIHH26N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH26N60EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH26N60EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH26N60EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH26N60EF-T1-GE3?

SIHH26N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH26N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH26N60EF-T1-GE3?

For technical support, including SIHH26N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH26N60EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHH26N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH26N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH26N60EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH26N60EF-T1-GE3?

All SIHH26N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH26N60EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH26N60EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH26N60EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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