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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH27N60EF-T1-GE3

Name: SIHH27N60EF-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH27N60EF-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH27N60EF-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH27N60EF-T1-GE3.pdf

Description:: MOSFET N-CH 600V 29A PPAK 8 X 8

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Product details

Overview

SIHH27N60EF-T1-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, ultra-low gate charge (90 nC typ.), 0.087 Ω R_DS(on) at 10 V, and avalanche-rated (353 mJ E_AS). It serves as a high-efficiency primary-side switching device in high-frequency server power supplies and PFC stages.

For engineers reviewing the SIHH27N60EF-T1-GE3 datasheet, SIHH27N60EF-T1-GE3 pinout, SIHH27N60EF-T1-GE3 application, or SIHH27N60EF-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), fast body diode (t_rr = 144 ns typ.), Kelvin-source noise immunity, and 600 V blocking capability for telecom and industrial SMPS designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for high-voltage power conversion, featuring an integrated fast-recovery body diode (Q_rr = 0.9 μC typ., t_rr = 144 ns) and Kelvin source terminal to decouple gate drive loop from high-current source return path. Its 0.48 °C/W R_thJC enables high-power density thermal design.

The device operates with V_GS(th) of 2.0–4.0 V and supports 10 V gate drive for full enhancement; dynamic parameters include C_iss = 2609 pF, C_oss = 125 pF, and Cr_ss = 5 pF at V_DS = 100 V - enabling precise modeling of switching transitions in hard-switched and ZVS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for voltage spikes in PFC and LLC resonant converters
R_DS(on) typ. @ 10 V	0.087 Ω - delivers ≤ 16 W conduction loss at 13.5 A, enabling high-efficiency operation in 1–3 kW power stages
Q_g max	135 nC - enables fast turn-on with low gate driver power demand; 90 nC typical reduces switching losses in 100–500 kHz designs
E_AS	353 mJ - rated for unclamped inductive switching stress without failure, critical for robustness in motor drives and welders
t_rr	144 ns typ. - minimizes reverse recovery energy loss and dv/dt-induced shoot-through risk in bridge configurations
R_thJC max	0.62 °C/W - allows >150 W continuous power dissipation with moderate heatsinking in PowerPAK 8×8 footprint
I_D cont. @ T_C = 100 °C	18 A - defines usable current limit under real-world board-level thermal conditions, not ideal lab ratings

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; connects to gate driver output; requires <1.2 Ω gate resistance for optimal switching speed and ringing control
Pin 2	Kelvin Source	Dedicated low-noise source reference for gate driver feedback; isolated from high-current source return to suppress Miller-induced false turn-on
Pin 3	Source	Main current-carrying source terminal; tied to power ground plane; carries full load current (up to 29 A)
Pin 4	Drain	High-voltage drain node; soldered to large copper area or heatsink via exposed pad; handles 600 V blocking and switching transients

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return path from high-di/dt source current, eliminating false triggering during hard commutation
Avalanche energy rating (E_AS)	353 mJ single-pulse - guarantees ruggedness against inductive switching faults without external snubbers in motor and welding inverters
Low R_DS(on) × Q_g figure-of-merit	~7.5 Ω·nC - balances conduction and switching losses for peak efficiency in 100–300 kHz telecom PSUs
Fast body diode (t_rr, Q_rr)	144 ns / 0.9 μC - reduces dead-time losses and EMI in synchronous rectification and half-bridge topologies
Ultra-low C_iss and Cr_ss	2609 pF / 5 pF - minimizes gate drive power and improves dv/dt immunity in high-side switching applications

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 1.5 kW active clamp forward or LLC resonant converter operating at 250–350 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC input and delivering regulated 12 V/48 V output. Use Value: Low Q_g and fast body diode reduce switching losses by ≥12 % vs. standard superjunction MOSFETs, improving full-load efficiency to >96 %.	Use Scenario: Switching transistor in 3 kW telecom rectifier with PFC + LLC dual-stage architecture. IC Role / Device Role / Timing Role: Main switch in boost PFC stage operating at 65–100 kHz, managing 208–380 V AC input. Use Value: 600 V rating and 353 mJ E_AS ensure reliable operation under line surges and transient overloads per GR-1089-CORE.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string inverter's DC/AC H-bridge stage converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side and low-side switching device in three-phase IGBT/MOSFET hybrid inverter leg. Use Value: Kelvin source and low Cr_ss suppress cross-conduction during high dv/dt commutation, reducing shoot-through risk in 16 kHz PWM.	Use Scenario: Inverter output stage switch in 7.5 kW variable frequency drive powering induction motors. IC Role / Device Role / Timing Role: Hard-switched power switch in 2–8 kHz PWM inverter leg with regenerative braking diode conduction. Use Value: Fast body diode (t_rr = 144 ns) and low V_SD (0.9 V) minimize conduction loss during freewheeling, improving thermal margin at 40 °C ambient.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1.5 kW active clamp forward or LLC resonant converter operating at 250–350 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC input and delivering regulated 12 V/48 V output.

Use Value: Low Q_g and fast body diode reduce switching losses by ≥12 % vs. standard superjunction MOSFETs, improving full-load efficiency to >96 %.

Use Scenario: Switching transistor in 3 kW telecom rectifier with PFC + LLC dual-stage architecture.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage operating at 65–100 kHz, managing 208–380 V AC input.

Use Value: 600 V rating and 353 mJ E_AS ensure reliable operation under line surges and transient overloads per GR-1089-CORE.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string inverter's DC/AC H-bridge stage converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-side and low-side switching device in three-phase IGBT/MOSFET hybrid inverter leg.

Use Value: Kelvin source and low Cr_ss suppress cross-conduction during high dv/dt commutation, reducing shoot-through risk in 16 kHz PWM.

Use Scenario: Inverter output stage switch in 7.5 kW variable frequency drive powering induction motors.

IC Role / Device Role / Timing Role: Hard-switched power switch in 2–8 kHz PWM inverter leg with regenerative braking diode conduction.

Use Value: Fast body diode (t_rr = 144 ns) and low V_SD (0.9 V) minimize conduction loss during freewheeling, improving thermal margin at 40 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 58 A, R_DS(on) = 0.055 Ω, Q_g = 120 nC, TO-247 package, no Kelvin source	Higher current rating but larger footprint and no Kelvin source; less suitable for high-density, noise-sensitive layouts	Prefer when higher continuous current and lower R_DS(on) outweigh layout compactness and noise immunity needs
IXFH32N60X	600 V, 32 A, R_DS(on) = 0.115 Ω, Q_g = 85 nC, TO-247 package, standard source	Lower Q_g but higher R_DS(on); lacks avalanche rating and Kelvin source; smaller gate charge eases driver design	Choose where gate drive simplicity and cost matter more than ruggedness and EMI performance in mid-power SMPS

Compared with STW62N60M2 and IXFH32N60X, SIHH27N60EF-T1-GE3 uniquely combines Kelvin source, 353 mJ E_AS, and 0.087 Ω R_DS(on) in a thermally efficient 8×8 mm package - making it optimal for space-constrained, high-reliability telecom and server power where noise immunity and fault tolerance are non-negotiable.

Availability

SIHH27N60EF-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHH27N60EF-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHH27N60EF-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in demanding server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SIHH27N60EF-T1-GE3 at 100 °C case temperature?

The SIHH27N60EF-T1-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects real-world thermal derating on a PCB with adequate copper area and airflow, not ideal lab conditions. The 29 A rating applies only at T_C = 25 °C and must be reduced linearly using the 1.6 W/°C derating factor above that temperature. SIHH27N60EF-T1-GE3's low R_thJC (0.48 °C/W) helps maintain this current capability in compact layouts.

Does SIHH27N60EF-T1-GE3 have a Kelvin source connection, and how is it used in circuit layout?

Yes, SIHH27N60EF-T1-GE3 features a dedicated Kelvin source (Pin 2) separate from the main source (Pin 3). In layout, Pin 2 must connect directly to the gate driver's source reference (e.g., driver IC ground or bootstrap capacitor negative), while Pin 3 carries high-current return to the power ground plane. This separation prevents di/dt-induced voltage drop on the source path from modulating the gate-source voltage - a critical requirement for stable operation in high-frequency, high-di/dt applications like LLC resonant converters. SIHH27N60EF-T1-GE3's Kelvin source is validated in Vishay's application notes for noise-sensitive topologies.

What is the typical reverse recovery time (t_rr) of the body diode in SIHH27N60EF-T1-GE3, and why does it matter?

The SIHH27N60EF-T1-GE3 body diode has a typical reverse recovery time (t_rr) of 144 ns at T_J = 25 °C, I_F = 13.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This fast recovery minimizes energy loss during freewheeling and reduces voltage overshoot and EMI in bridge-leg configurations. In hard-switched topologies like PFC boost or motor drive inverters, SIHH27N60EF-T1-GE3's low t_rr and Q_rr (0.9 μC) directly improve system efficiency and reliability compared to standard superjunction MOSFETs with slower diodes.

Is SIHH27N60EF-T1-GE3 avalanche-rated, and what does its E_AS value mean for design?

Yes, SIHH27N60EF-T1-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 353 mJ. This means the device can safely absorb inductive energy - such as from transformer leakage inductance or motor winding - without failure, provided the pulse width and junction temperature remain within limits. For example, in a 73 A pulsed condition (I_DM), SIHH27N60EF-T1-GE3 withstands the resulting V_DS spike up to 600 V. This ruggedness eliminates need for external snubbers in many industrial motor and welding applications, simplifying design and improving reliability.

What package type does SIHH27N60EF-T1-GE3 use, and what are its thermal advantages?

SIHH27N60EF-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), with an exposed drain pad for direct thermal coupling to the PCB. Its key thermal advantage is a low maximum junction-to-case thermal resistance (R_thJC) of 0.62 °C/W, enabling >150 W power dissipation with standard 2 oz copper and thermal vias. Unlike TO-247 packages, the PowerPAK 8×8 offers superior board-level thermal performance and smaller footprint - critical for high-density server and telecom power modules. SIHH27N60EF-T1-GE3's package is RoHS-compliant, lead (Pb)-free, and halogen-free.

SIHH27N60EF-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2609 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH27N60EF-T1-GE3 FAQ

1.How can I place an order for SIHH27N60EF-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH27N60EF-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH27N60EF-T1-GE3 reliable?

The price and inventory of SIHH27N60EF-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH27N60EF-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH27N60EF-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH27N60EF-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH27N60EF-T1-GE3?

SIHH27N60EF-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH27N60EF-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH27N60EF-T1-GE3?

For technical support, including SIHH27N60EF-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH27N60EF-T1-GE3 requirements.

6.How does Aetrix verify that SIHH27N60EF-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH27N60EF-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH27N60EF-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH27N60EF-T1-GE3?

All SIHH27N60EF-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH27N60EF-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH27N60EF-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH27N60EF-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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